IR207DM08CCB [INFINEON]
Rectifier Diode, 1 Element, 800V V(RRM);
| 型号： | IR207DM08CCB |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Element, 800V V(RRM) 二极管 |
| 文件： | 总3页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I0139J 01/00
IR207DM..CCB Series
STANDARD RECOVERY DIODES
Junction Size:
Wafer Size:
Rectangular 207 x 157 mils
4"
VRRM Class:
800 and 1200 V
Glassivated MOAT
Passivation Process:
Reference IR Packaged Part: 20ETS Series
Major Ratings and Characteristics
Parameters
Units
Test Conditions
VFM
MaximumForwardVoltage
1100mV
TJ = Amb., IF = 2 0 A
VRRM Reverse Breakdown Voltage Range
800 and 1200 V TJ = Amb., IRRM = 100 µA
(1)
(1)Nitrogen flow on die edge.
Mechanical Characteristics
NominalBackMetalComposition,Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
100% Al, (20 µm)
NominalFrontMetalComposition,Thickness
ChipDimensions
207x157mils(seedrawing)
100mm,withstd.<110>flat
300 µm
Wafer Diameter
Wafer Thickness
MaximumWidthofSawingLine
45 µm
Reject Ink Dot Size
0.25mmdiameterminimum
Seedrawing
InkDotLocation
RecommendedStorageEnvironment
Storageinoriginalcontainer,indessicated
nitrogen,withnocontamination
1
www.irf.com
IR207DM..CCB Series
Bulletin I0139J 01/00
Ordering Information Table
Device Code
IR 207
D
M
12
BCC
3
1
2
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
International Rectifier Device
Chip Dimension in Mils
Type of Device: D = Wire Bondable Standard Recovery Diode
Passivation Process: M = Glassivated MOAT
Voltage code: Code x 100 = VRRM
Available Class
08= 800 V
12= 1200 V
Metallization: C = Aluminium (Anode) - Silver (Cathode)
CB = Probed Uncut Die (wafer in box)
None = Probed Die in chip carrier
Outline Table
All dimensions are in millimeters
2
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IR207DM..CCB Series
Bulletin I0139J 01/00
Wafer Layout
TOP VIEW
N° 304 Basic Cells
All dimensions are in millimeters
3
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