IR2103STR [INFINEON]
Half Bridge Based MOSFET Driver, 0.36A, CMOS, PDSO8, SOIC-8;
| 型号： | IR2103STR |
| 厂家： | 
Infineon |
| 描述： | Half Bridge Based MOSFET Driver, 0.36A, CMOS, PDSO8, SOIC-8 驱动器 |
| 文件： | 总12页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No. PD60045-N
( )
S
IR2103
HALF-BRIDGE DRIVER
Features
Product Summary
• Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout
V
600V max.
130 mA / 270 mA
10 - 20V
OFFSET
I +/-
O
V
OUT
• 3.3V, 5V and 15V logic compatible
• Cross-conduction prevention logic
• Matched propagation delay for both channels
• Internal set deadtime
• High side output in phase with HIN input
• Low side output out of phase with LIN input
t
(typ.)
680 & 150 ns
520 ns
on/off
Deadtime (typ.)
Packages
Description
The IR2103(S) are high voltage, high speed power
MOSFET and IGBT drivers with dependent high and
low side referenced output channels.Proprietary HVIC
and latch immune CMOS technologies enable rug-
gedized monolithic construction. The logic input is
compatible with standard CMOS or LSTTL output,
down to 3.3V logic. The output drivers feature a high
8-Lead SOIC
IR2103S
8-Lead PDIP
IR2103
pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to
drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Typical Connection
up to 600V
VCC
VCC
VB
HO
VS
HIN
LIN
HIN
LIN
TO
LOAD
COM
LO
(Refer to Lead Assignments for correct configuration).This/These diagram(s) show electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
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S
IR2103
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
Symbol
Definition
High side floating absolute voltage
High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Min.
Max.
Units
V
-0.3
625
B
S
V
V
- 25
V
B
V
B
+ 0.3
+ 0.3
25
B
V
HO
V
- 0.3
S
V
V
CC
-0.3
-0.3
-0.3
—
V
V
+ 0.3
+ 0.3
LO
CC
V
Logic input voltage (HIN &
)
V
CC
LIN
IN
dV /dt
s
Allowable offset supply voltage transient
50
V/ns
P
Package power dissipation @ T ≤ +25°C (8 Lead PDIP)
—
1.0
0.625
125
200
150
150
300
D
A
W
(8 Lead SOIC)
—
Rth
Thermal resistance, junction to ambient
(8 Lead PDIP)
(8 Lead SOIC)
—
JA
°C/W
°C
—
T
T
Junction temperature
—
J
Storage temperature
-55
—
S
T
Lead temperature (soldering, 10 seconds)
L
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The V offset rating is tested with all supplies biased at 15V differential.
S
Symbol
Definition
High side floating supply absolute voltage
High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Min.
Max.
Units
V
V
S
+ 10
V + 20
S
B
S
V
Note 1
600
V
HO
V
V
B
S
V
V
CC
10
0
20
V
V
CC
LO
V
Logic input voltage (HIN &
)
0
V
CC
LIN
IN
°C
T
A
Ambient temperature
-40
125
Note 1: Logic operational for V of -5 to +600V. Logic state held for V of -5V to -V . (Please refer to the Design Tip
S
S
BS
DT97-3 for more details).
2
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S
IR2103
Dynamic Electrical Characteristics
V
(V , V ) = 15V, C = 1000 pF and T = 25°C unless otherwise specified.
BIAS CC BS L A
Symbol
Definition
Min. Typ. Max. Units Test Conditions
t
Turn-on propagation delay
Turn-off propagation delay
Turn-on rise time
—
680
150
100
50
820
220
170
90
V = 0V
S
on
off
t
—
V
S
= 600V
t
t
—
r
f
Turn-off fall time
—
ns
DT
Deadtime, LS turn-off to HS turn-on &
HS turn-on to LS turn-off
400
520
650
MT
Delay matching, HS & LS turn-on/off
—
—
60
Static Electrical Characteristics
V
(V , V ) = 15V and T = 25°C unless otherwise specified. The V , V and I parameters are referenced to
BIAS CC BS A IN TH IN
COM. The V and I parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
O
O
Symbol
Definition
Min. Typ. Max. Units Test Conditions
LIN
LIN
V
Logic “1” (HIN) & Logic “0” (
) input voltage
) input voltage
3
—
—
0.8
100
100
50
V
= 10V to 20V
IH
CC
CC
V
V
Logic “0” (HIN) & Logic “1” (
—
—
—
—
—
—
—
—
8
—
V
= 10V to 20V
IL
V
OH
High level output voltage, V
- V
O
—
I
I
= 0A
= 0A
BIAS
O
mV
V
Low level output voltage, V
—
OL
LK
O
O
I
Offset supply leakage current
Quiescent V supply current
—
V = V = 600V
B S
I
I
30
150
3
55
V
= 0V or 5V
= 0V or 5V
QBS
BS
IN
IN
Quiescent V
supply current
270
10
V
µA
QCC
CC
I
Logic “1” input bias current
Logic “0” input bias current
HIN = 5V, LIN = 0V
LIN
= 5V
IN+
I
—
1
HIN = 0V,
IN-
V
V
CC
supply undervoltage positive going
8.9
9.8
CCUV+
threshold
supply undervoltage negative going
V
V
V
CC
7.4
130
270
8.2
210
360
9
CCUV-
threshold
I
Output high short circuit pulsed current
—
—
V = 0V, V = V
O IN IH
O+
PW ≤ 10 µs
mA
I
Output low short circuit pulsed current
V
O
= 15V, V = V
O-
IN
IL
PW ≤ 10 µs
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S
IR2103
Functional Block Diagram
VB
Q
HV
LEVEL
SHIFT
R
S
HO
PULSE
FILTER
DEAD
TIME
HIN
PULSE
GEN
VS
UV
DETECT
VCC
Vcc
LIN
LO
DEAD
TIME
COM
Lead Definitions
Symbol Description
HIN
Logic input for high side gate driver output (HO), in phase
Logic input for low side gate driver output (LO), out of phase
High side floating supply
LIN
V
B
HO
High side gate drive output
V
V
High side floating supply return
Low side and logic fixed supply
Low side gate drive output
S
CC
LO
COM
Low side return
Lead Assignments
V
V
1
2
3
4
V
CC
B
8
1
2
3
4
V
CC
B
8
HO
HO
HIN
LIN
7
6
5
HIN
LIN
7
6
5
V
S
V
S
LO
LO
COM
COM
8 Lead PDIP
8 Lead SOIC
IR2103
IR2103S
4
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S
IR2103
LIN
HIN
LIN
50%
50%
t
t
t
off
t
f
on
r
90%
90%
HO
LO
10%
10%
LO
Figure 1. Input/Output Timing Diagram
50%
50%
HIN
HO
t
t
t
f
t
on
off
90%
r
90%
10%
10%
Figure 2. Switching Time Waveform Definitions
50%
50%
HIN
LIN
90%
10%
HO
LO
DT
90%
DT
10%
Figure 4. Deadtime Waveform Definitions
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IR2103
1400
1200
1400
1200
1000
800
600
400
200
0
Max.
Typ.
1000
Max.
800
600
Typ.
400
200
0
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
Temperature (oC)
VBIAS Supply Voltage (V)
Figure 6A. Turn-On Time vs Temperature
Figure 6B. Turn-On Time vs Supply Voltage
500
400
300
1000
Max.
800
600
Typ
.
Max.
Typ.
200
100
0
400
200
0
-50
-25
0
25
50
75
100
125
0
2
4
6
8
10 12 14 16 18 20
Temperature (oC)
Input Voltage (V)
Figure 6C. Turn-On Time vs Input Voltage
Figure 7A. Turn-Off Time vsTemperature
500
400
1000
800
600
300
200
100
0
Max.
Typ.
Ma x.
400
200
Typ
0
0
2
4
6
8
10 12 14 16 18 20
10
12
14
16
18
20
VBIAS Supply Voltage (V)
Input Voltage (V)
Figure 7C. Turn-Off Time vs Input Voltage
Figure 7B. Turn-Off Time vs Supply Voltage
6
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IR2103
500
400
300
200
100
0
500
400
300
200
100
0
Max .
Typ.
Max.
Typ.
-50
-25
0
25
50
75
100
100
100
125
125
125
10
12
14
16
18
20
Temperature (oC)
VBIAS Supply Voltage (V)
Figure 9A. Turn-On Rise Time
vs Temperature
Figure 9B. Turn-On Rise Time
vs Voltage
200
150
100
50
200
150
100
50
Max.
Typ.
Max.
Typ.
0
0
10
12
14
16
18
20
-50
-25
0
25
50
75
Temperature (oC)
VBIAS Supply Voltage (V)
Figure 10A. Turn Off Fall Time
vs Temperature
Figure 10B. Turn Off Fall Time vs Voltage
1400
1200
1000
800
600
400
200
0
1400
1200
1000
800
600
400
200
0
Max.
Ty p.
Max.
p.
Ty
Min.
Min.
-50
-25
0
25
50
75
10
12
14
16
18
20
Temperature (oC)
VBIAS Supply Voltage (V)
Figure 11A. Deadtime vs Temperature
Figure 11B. Deadtime vs Voltage
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IR2103
8
7
6
5
8
7
6
5
4
3
2
1
0
4
Min.
Min.
3
2
1
0
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (oC)
VBIAS Supply Voltage (V)
Figure 12B. Logic "1" (HIN) & Logic "0" (LIN)
Input Voltage vs Voltage
Figure12A. Logic "1" (HIN) & Logic "0" (LIN)
Input Voltage vs Temperature
4
3.2
2.4
1.6
4
3.2
2.4
1.6
Max .
0.8
Max .
0.8
0
0
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (oC)
Vcc Supply Voltage (V)
Figure 13B. Logic "0"(HIN) & Logic "1"(LIN)
Input Voltage vs Voltage
Figure 13A. Logic "0"(HIN) & Logic "1"(LIN)
Input Voltage vs Temperature
1
0.8
0.6
0.4
1
0.8
0.6
0.4
0.2
0.2
Max.
Max.
0
0
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (oC)
Vcc Supply Voltage (V)
Figure 14A. High Level Output
vs Temperature
Figure 14B. High Level Output vs Voltage
8
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IR2103
1
0.8
0.6
0.4
0.2
0
1
0.8
0.6
0.4
0.2
0
Max.
Max .
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
125
125
Temperature (oC)
Vcc Supply Voltage (V)
Figure 15A. Low Level Output
vs Temperature
Figure 15B. Low Level Output vs Voltage
500
400
300
200
100
0
500
400
300
200
100
0
Max.
Max .
-50
-25
0
25
50
75
100
0
200
400
600
800
Temperature (oC)
VB Boost Voltage (V)
Figure 16A. Offset Supply Current
vs Temperature
Figure 16B. Offset Supply Current vs Voltage
150
120
90
150
120
90
60
60
Max.
Max .
30
30
Ty p.
-25
Typ.
0
0
-50
0
25
50
75
100
10
12
14
16
18
20
Temperature (oC)
VBS Floating Supply Voltage (V)
Figure 17A. VBS Supply Current
vs Temperature
Figure 17B. VBS Supply Current vs Voltage
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IR2103
700
600
500
400
700
600
500
400
Max.
300
300 Max.
200
200
100
100
Typ.
Typ.
0
0
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (oC)
Vcc Supply Voltage (V)
Figure 18A. Vcc Supply Current
vs Temperature
Figure 18B. Vcc Supply Current vs Voltage
3 0
2 5
2 0
30
25
20
15
10
5
1 5
Ma x .
1 0
Max
5
0
Ty p .
Ty p.
0
1 0
1 2
1 4
1 6
1 8
2 0
-50
-25
0
25
50
75
100
125
Temperature (oC)
Vcc Supply Voltage (V)
Figure 19A. Logic "1" Input Current
vs Temperature
Figure 19B. Logic "1" Input Current
vsVoltage
5
4
3
2
1
0
5
4
3
2
1
0
Max.
Max .
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (oC)
Vcc Supply Voltage (V)
Figure 20B. Logic "0" Input Current
vs Voltage
Figure 20A. Logic "0" Input Current
vs Temperature
10
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IR2103
11
10
9
11
10
9
Max .
Max .
Typ.
Typ.
Min.
8
8
7
7
Min.
6
6
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
Temperature (oC)
Temperature (oC)
Figure 21A. Vcc Undervoltage Threshold(+)
vs Temperature
Figure 21B. Vcc UndervoltageThreshold (-)
vs Temperature
500
400
500
400
300
Ty p.
300
200
200
Typ.
100
Min.
100
Min.
0
0
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
Temperature (oC)
VBIAS Supply Voltage (V)
Figure 22A. Output Source Current vs
Temperature
Figure 22B. Output Source Current
vs Voltage
700
700
600
500
400
300
200
100
0
600
500
400
300
200
100
0
Typ.
Min.
Typ.
Min.
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (oC)
VBIAS Supply Voltage (V)
Figure 23B. Output Sink Current
vs Voltage
Figure 23A. Output Sink Current
vs Temperature
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IR2103
01-6014
01-3003 01 (MS-001AB)
8-Lead PDIP
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
FOOTPRINT
8X 0.72 [.028]
5
A
A1 .0040
b
c
.013
.0075
.189
.0098
.1968
.1574
8
7
2
6
3
5
6
D
E
e
H
E
.1497
0.25 [.010]
A
.050 BASIC
1.27 BASIC
6.46 [.255]
1
4
e 1 .025 BASIC
0.635 BASIC
H
K
L
y
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
3X 1.27 [.050]
e
6X
8X 1.78 [.070]
K x 45°
e1
A
C
y
0.10 [.004]
8X c
8X L
A1
B
8X b
7
0.25 [.010]
C A
NOT ES :
5
6
7
DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
3. DIMENS IONS ARE S HOWN IN MILLIME TE RS [INCHES ].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
01-6027
01-0021 11 (MS-012AA)
8-Lead SOIC
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice. 5/23/2001
12
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