IR2153DSPBF [INFINEON]
Half Bridge Based MOSFET Driver, CMOS, PDSO8, LEAD FREE, MS-012AA, SOIC-8;
| 型号： | IR2153DSPBF |
| 厂家： | 
Infineon |
| 描述： | Half Bridge Based MOSFET Driver, CMOS, PDSO8, LEAD FREE, MS-012AA, SOIC-8 驱动 光电二极管 接口集成电路 驱动器 |
| 文件： | 总8页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Data Sheet No. PD60062-K
S
IR2153(D) ( )
SELF-OSCILLATING HALF-BRIDGE DRIVER
Features
Product Summary
Integrated 600V half-bridge gate driver
•
•
•
•
•
•
•
•
•
•
•
•
•
•
V
600V max.
50%
OFFSET
15.6V zener clamp on Vcc
True micropower start up
Duty Cycle
Tighter initial deadtime control
Low temperature coefficient deadtime
T /T
r p
80/40ns
15.6V
Shutdown feature (1/6th Vcc) on C pin
T
Increased undervoltage lockout Hysteresis (1V)
Lower power level-shifting circuit
V
clamp
Constant LO, HO pulse widths at startup
Lower di/dt gate driver for better noise immunity
Low side output in phase with RT
Deadtime (typ.)
1.2 µs
Internal 50nsec (typ.) bootstrap diode (IR2153D)
Excellent latch immunity on all inputs and outputs
ESD protection on all leads
Packages
Description
The IR2153(D)(S) are an improved version of the
popular IR2155 and IR2151 gate driver ICs, and incor-
porates a high voltage half-bridge gate driver with a front
end oscillator similar to the industry standard CMOS
555 timer. The IR2153 provides more functionality and
is easier to use than previous ICs. A shutdown feature
8 Lead SOIC
8 Lead PDIP
has been designed into the C pin, so that both gate driver outputs can be disabled using a low voltage control
T
signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout
threshold on V
has been reached, resulting in a more stable profile of frequency vs time at startup. Noise
CC
immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the
undervoltage lockout hysteresis to 1V.Finally, special attention has been payed to maximizing the latch immunity
of the device, and providing comprehensive ESD protection on all pins.
Typical Connections
IR2153D
IR2153(S)
600V
MAX
600V
MAX
VCC
VB
VCC
VB
H O
VS
H O
VS
RT
CT
RT
CT
LO
LO
Shutdown
C O M
Shutdown
C O M
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S
IR2153(D) ( )
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions.
Symbol Definition
Min.
Max.
Units
V
High side floating supply voltage
High side floating supply offset voltage
High side floating output voltage
Low side output voltage
-0.3
625
B
S
V
V
- 25
V + 0.3
B
B
V
HO
V
- 0.3
V + 0.3
B
S
V
V
LO
-0.3
V
+ 0.3
+ 0.3
+ 0.3
CC
CC
V
RT
R
C
pin voltage
pin voltage
-0.3
-0.3
—
V
T
T
V
CT
V
CC
I
Supply current (note 1)
pin current
25
CC
mA
V/ns
W
I
RT
R
-5
5
T
dV /dt
Allowable offset voltage slew rate
-50
—
50
s
P
D
Maximum power dissipation @ T ≤ +25°C
(8 Lead DIP)
(8 Lead SOIC)
(8 Lead DIP)
(8 Lead SOIC)
1.0
A
—
0.625
125
200
150
150
300
Rth
Thermal resistance, junction to ambient
—
JA
°C/W
°C
—
T
J
Junction temperature
-55
-55
—
T
Storage temperature
S
T
Lead temperature (soldering, 10 seconds)
L
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Symbol Definition
Min.
Max.
Units
V
High side floating supply voltage
Steady state high side floating supply offset voltage
Supply voltage
V
- 0.7
V
Bs
CC
CLAMP
600
V
V
-3.0 (note 2)
10
S
V
CC
V
CLAMP
I
Supply current
(note 3)
-40
5
mA
°C
CC
T
Junction temperature
125
J
Note 1:
This IC contains a zener clamp structure between the chip V
and COM which has a nominal breakdown
CC
voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source
greater than the V specified in the Electrical Characteristics section.
CLAMP
Note 2:
Note 3:
Care should be taken to avoid output switching conditions where the V node flies inductively below ground by
more than 5V.
S
Enough current should be supplied to the V
voltage at this pin.
pin of the IC to keep the internal 15.6V zener diode clamping the
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CC
2
S
IR2153(D) ( )
Recommended ComponentValues
Symbol Component
Min.
10
Max.
—
Units
kΩ
R
Timing resistor value
T
C
T
C pin capacitor value
T
330
—
pF
IR2153 RT vs Frequency
1000000
100000
10000
1000
330pf
470pF
1nF
CT Values
2.2nF
4.7nF
10nF
100
10
10
100
1000
10000
100000
1000000
RT (ohms)
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IR2153(D) ( )
Electrical Characteristics
V (V , V ) = 12V, C = 1000 pF, C = 1 nF and T = 25°C unless otherwise specified. The V , V and I
BIAS CC BS L T A IN TH IN
parameters are referenced to COM. The V and I parameters are referenced to COM and are applicable to the
O
O
respective output leads: HO or LO.
Low Voltage Supply Characteristics
Symbol Definition
Min. Typ.
Max. Units Test Conditions
V
Rising V
undervoltage lockout threshold
CC
8.1
7.2
0.5
—
9.0
8.0
9.9
CCUV+
V
CCUV-
Falling V undervoltage lockout threshold
8.8
1.5
V
CC
V
V
CC
undervoltage lockout Hysteresis
1.0
CCUVH
I
Micropower startup V
supply current
75
150
950
16.8
V ≤ V
CC CCUV-
QCCUV
CC
µA
I
Quiescent V supply current
—
500
15.6
QCC
CC
V
V
CC
zener clamp voltage
14.4
V
I
= 5mA
CLAMP
CC
Floating Supply Characteristics
Symbol Definition
Min.
Typ.
Max. Units Test Conditions
I
Micropower startup V supply current
BS
—
—
—
0
10
50
5.0
V
≤ V
QBSUV
CC CCUV-
µA
I
Quiescent VBS supply current
30
4.0
QBS
V
Minimum required V voltage for proper
V
V
=V
+ 0.1V
BSMIN
BS
CC CCUV+
functionality from R to HO
T
I
Offset supply leakage current
—
—
—
50
µA
V = V = 600V
B S
LK
VF
Bootstrap diode forward voltage (IR2153D)
0.5
1.0
V
IF = 250mA
Oscillator I/O Characteristics
Symbol Definition
Min.
Typ.
Max. Units Test Conditions
f
Oscillator frequency
19.4
20
20.6
R = 36.9kΩ
T
RT = 7.43kΩ
fo < 100kHz
osc
kHz
94
48
—
100
50
106
52
d
R
pin duty cycle
%
T
I
C
pin current
0.001
0.70
8.0
1.0
1.2
—
uA
mA
T
CT
I
UV-mode C pin pulldown current
0.30
—
V = 7V
CC
T
CTUV
V
V
V
V
Upper C ramp voltage threshold
T
CT+
V
—
4.0
—
Lower C ramp voltage threshold
CT-
T
C
T
voltage shutdown threshold
1.8
—
—
—
—
2.1
10
2.4
50
CTSD
RT+
I
= 100µA
= 1mA
= 100µA
= 1mA
≤ V
High-level R output voltage, V - V
T
CC
RT
RT
100
10
300
50
I
I
I
RT
RT
RT
V
Low-level R output voltage
T
RT-
100
300
mV
—
—
0
100
50
V
I
V
V
UV-mode R output voltage
T
RTUV
RTSD
CC
CCUV-
10
= 100µA,
SD-Mode R output voltage, V
- V
T
CC
RT
RT
V
CT
= 0V
—
10
300
I
= 1mA,
RT
V
CT
= 0V
4
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IR2153(D) ( )
Electrical Characteristics (cont.)
Gate Driver Output Characteristics
Symbol Definition
Min.
Typ. Max. Units Test Conditions
V
High level output voltage, V
-V
O
—
—
—
0
0
0
100
100
100
I
O
I
O
I
O
= OA
= OA
= OA
OH
BIAS
VOL
Low-level output voltage, VO
mV
VOL_UV UV-mode output voltage, VO
V
CC
≤ V
CCUV-
t
t
t
t
Output rise time
—
—
80
150
100
—
r
Output fall time
45
nsec
f
Shutdown propogation delay
Output deadtime (HO or LO)
—
660
1.20
sd
d
0.75
1.65
µsec
Lead Definitions
Symbol Description
V
Logic and internal gate drive supply voltage
Oscillator timing resistor input
Oscillator timing capacitor input
IC power and signal ground
CC
R
T
C
T
COM
LO
Low side gate driver output
V
High voltage floating supply return
High side gate driver output
S
HO
V
B
High side gate driver floating supply
Lead Assignments
8 Lead PDIP
8 Lead SOIC
IR2153(D)
IR2153S
NOTE: The IR2153D is offered in 8 lead PDIP only.
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S
IR2153(D) ( )
Functional Block Diagram for IR2153(S)
RT
VB
R
Q
HV
LEVEL
SHIFT
+
-
R
S
HO
PULSE
FILTER
R
R
S
Q
Q
PULSE
GEN
DEAD
TIME
VS
+
-
VCC
R/2
R/2
15.6V
+
-
CT
LO
DELAY
LOGIC
DEAD
TIME
UV
DETECT
COM
Functional Block Diagram for IR2153D
RT
VB
R
Q
HV
LEVEL
SHIFT
+
-
R
S
HO
PULSE
FILTER
R
R
S
Q
Q
PULSE
GEN
DEAD
TIME
VS
D1
+
-
VCC
R/2
R/2
15.6V
+
-
CT
LO
DELAY
LOGIC
DEAD
TIME
UV
DETECT
COM
NOTE: The D1 is a separate die.
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S
IR2153(D) ( )
8 Lead PDIP
01-3003 01
8 Lead SOIC
01-0021 08
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IR2153(D) ( )
V
CLAMP
Vccuv+
Vcc
RT
2/3
RT ,CT
1/3
CT
td
LO
td
HO
Figure 1. Input/Output Timing Diagram
RT
50%
50%
(HO)
(LO)
90%
10%
HO
LO
DT
90%
10%
Figure 3. Deadtime Waveform Definitions
Figure 2. Switching Time Waveform Definitions
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
http://www.irf.com/
Data and specifications subject to change without notice. 4/6/2001
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