IR2153STRPBF [INFINEON]
SELF-OSCILLATING HALF-BRIDGE DRIVER; 自振荡半桥驱动器
| 型号： | IR2153STRPBF |
| 厂家： | 
Infineon |
| 描述： | SELF-OSCILLATING HALF-BRIDGE DRIVER |
| 文件： | 总9页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No. PD60062 revO
(NOTE:For new designs, we recommend
IR’s new product IRS2153D)
IR2153(D)(S)&(PbF)
SELF-OSCILLATING HALF-BRIDGE DRIVER
Features
Product Summary
Integrated 600V half-bridge gate driver
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
V
600V max.
50%
OFFSET
15.6V zener clamp on Vcc
True micropower start up
Duty Cycle
T /T
Tighter initial deadtime control
Low temperature coefficient deadtime
80/40ns
15.6V
r p
Shutdown feature (1/6th Vcc) on C pin
T
Increased undervoltage lockout Hysteresis (1V)
Lower power level-shifting circuit
V
clamp
Constant LO, HO pulse widths at startup
Lower di/dt gate driver for better noise immunity
Low side output in phase with RT
Deadtime (typ.)
1.2 µs
Packages
Internal 50nsec (typ.) bootstrap diode (IR2153D)
Excellent latch immunity on all inputs and outputs
ESD protection on all leads
Also available LEAD-FREE
Description
The IR2153D(S) are an improved version of the
popular IR2155 and IR2151 gate driver ICs, and incor-
8 Lead SOIC
8 Lead PDIP
porates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS
555 timer. The IR2153 provides more functionality and is easier to use than previous ICs. A shutdown feature
has been designed into the C pin, so that both gate driver outputs can be disabled using a low voltage control
T
signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout
threshold on V
has been reached, resulting in a more stable profile of frequency vs time at startup.
CC
Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by
increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing
the latch immunity of the device, and providing comprehensive ESD protection on all pins.
Typical Connections
IR2153D
IR2153(S)
600V
MAX
600V
MAX
VCC
VB
VCC
VB
HO
VS
HO
VS
RT
CT
RT
CT
LO
LO
Shutdown
COM
Shutdown
COM
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1
IR2153(D)(S)& (PbF)
NOTE:For new designs, we recommend
IR’s new product IRS2153D
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions.
Symbol Definition
Min.
Max.
Units
V
High side floating supply voltage
High side floating supply offset voltage
High side floating output voltage
Low side output voltage
-0.3
625
B
V
S
V
- 25
V
B
+ 0.3
+ 0.3
B
S
V
HO
V
- 0.3
V
B
V
V
LO
-0.3
V
V
+ 0.3
+ 0.3
+ 0.3
CC
CC
V
RT
R pin voltage
T
-0.3
-0.3
—
V
CT
C pin voltage
T
V
CC
I
Supply current (note 1)
25
CC
mA
V/ns
W
I
R
pin current
-5
5
50
RT
T
dV /dt
Allowable offset voltage slew rate
-50
—
s
P
Maximum power dissipation @ T ≤ +25°C
(8 Lead DIP)
(8 Lead SOIC)
(8 Lead DIP)
(8 Lead SOIC)
1.0
D
A
—
0.625
125
200
150
150
300
Rth
Thermal resistance, junction to ambient
—
JA
°C/W
°C
—
T
Junction temperature
-55
-55
—
J
T
Storage temperature
S
L
T
Lead temperature (soldering, 10 seconds)
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Symbol Definition
Min.
Max.
Units
V
High side floating supply voltage
Steady state high side floating supply offset voltage
Supply voltage
V
- 0.7
V
Bs
CC
CLAMP
600
V
V
-3.0 (note 2)
10
S
V
CC
V
CLAMP
I
Supply current
(note 3)
-40
5
mA
°C
CC
T
Junction temperature
125
J
Note 1:
This IC contains a zener clamp structure between the chip V
and COM which has a nominal breakdown
CC
voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source
greater than the V specified in the Electrical Characteristics section.
CLAMP
Note 2:
Note 3:
Care should be taken to avoid output switching conditions where the V node flies inductively below ground by
more than 5V.
S
Enough current should be supplied to the V
voltage at this pin.
pin of the IC to keep the internal 15.6V zener diode clamping the
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CC
2
IR2153(D)(S)& (PbF)
NOTE:For new designs, we recommend
IR’s new product IRS2153D
Recommended Component Values
Symbol Component
Min.
10
Max.
—
Units
kΩ
R
Timing resistor value
T
C
T
C pin capacitor value
T
330
—
pF
IR2153 RT vs Frequency
1000000
100000
10000
1000
330pf
470pF
1nF
CT Values
2.2nF
4.7nF
10nF
100
10
10
100
1000
10000
100000
1000000
RT (ohms)
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3
IR2153(D)(S)& (PbF)
NOTE:For new designs, we recommend
IR’s new product IRS2153D
Electrical Characteristics
V
(V , V ) = 12V, C = 1000 pF, C = 1 nF and T = 25°C unless otherwise specified. The V , V and I
BIAS CC BS L T A IN TH IN
parameters are referenced to COM. The V and I parameters are referenced to COM and are applicable to the
O
O
respective output leads: HO or LO.
Low Voltage Supply Characteristics
Symbol Definition
Min. Typ.
Max. Units Test Conditions
V
Rising V undervoltage lockout threshold
CC
Falling V undervoltage lockout threshold
CC
8.1
7.2
0.5
—
9.0
8.0
9.9
CCUV+
V
CCUV-
8.8
1.5
V
V
V
undervoltage lockout Hysteresis
CC
1.0
CCUVH
I
Micropower startup V
supply current
75
150
950
16.8
V ≤ V
CC CCUV-
QCCUV
CC
μA
I
Quiescent V supply current
—
500
15.6
QCC
CC
V
V
zener clamp voltage
14.4
V
I
= 5mA
CLAMP
CC
CC
Floating Supply Characteristics
Symbol Definition
Min.
Typ.
Max. Units Test Conditions
I
I
Micropower startup V supply current
BS
—
—
—
0
30
4.0
10
50
V
≤ V
QBSUV
CC CCUV-
μA
Quiescent VBS supply current
QBS
V
Minimum required V voltage for proper
5.0
V
V
=V
+ 0.1V
BSMIN
BS
CC CCUV+
functionality from R to HO
T
I
Offset supply leakage current
—
—
—
50
μA
V
V = V = 600V
B S
LK
VF
Bootstrap diode forward voltage (IR2153D)
0.5
1.0
IF = 250mA
Oscillator I/O Characteristics
Symbol Definition
Min.
Typ.
Max. Units Test Conditions
f
Oscillator frequency
19.4
20
20.6
R = 36.9kΩ
T
RT = 7.43kΩ
fo < 100kHz
osc
kHz
94
48
—
100
50
106
52
d
R pin duty cycle
T
%
I
C
T
pin current
0.001
0.70
8.0
1.0
1.2
—
uA
mA
CT
I
UV-mode C pin pulldown current
0.30
—
V
= 7V
CC
T
CTUV
V
Upper C ramp voltage threshold
T
CT+
CT-
V
—
4.0
—
V
Lower C ramp voltage threshold
T
V
V
C
voltage shutdown threshold
T
1.8
—
—
—
—
2.1
10
2.4
50
CTSD
I
= 100μA
= 1mA
= 100μA
= 1mA
≤ V
High-level R output voltage, V - V
T
CC
RT
RT
RT+
100
10
300
50
I
I
I
RT
RT
RT
V
Low-level R output voltage
T
RT-
100
300
mV
—
—
0
100
50
V
I
V
V
UV-mode R output voltage
T
RTUV
CC
CCUV-
10
= 100μA,
SD-Mode R output voltage, V
- V
RTSD
T
CC
RT
RT
V
= 0V
CT
—
10
300
I
= 1mA,
RT
V
= 0V
CT
4
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IR2153(D)(S)& (PbF)
NOTE:For new designs, we recommend
IR’s new product IRS2153D
Electrical Characteristics (cont.)
Gate Driver Output Characteristics
Symbol Definition
Min.
Typ. Max. Units Test Conditions
V
High level output voltage, V
-V
O
—
—
—
0
0
0
100
100
100
I
O
I
O
I
O
= OA
= OA
= OA
OH
BIAS
VOL
Low-level output voltage, VO
mV
VOL_UV UV-mode output voltage, VO
V
CC
≤ V
CCUV-
t
t
t
t
Output rise time
—
—
80
150
100
—
r
Output fall time
45
nsec
f
Shutdown propogation delay
Output deadtime (HO or LO)
—
660
1.20
sd
d
0.75
1.65
μsec
Lead Definitions
Symbol Description
V
Logic and internal gate drive supply voltage
Oscillator timing resistor input
Oscillator timing capacitor input
IC power and signal ground
CC
R
T
C
T
COM
LO
Low side gate driver output
V
High voltage floating supply return
High side gate driver output
S
HO
V
B
High side gate driver floating supply
Lead Assignments
8 Lead PDIP
8 Lead SOIC
IR2153D
IR2153(S)
NOTE: The IR2153D is offered in 8 lead PDIP only.
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5
IR2153(D)(S)& (PbF)
NOTE:For new designs, we recommend
IR’s new product IRS2153D
Functional Block Diagram for IR2153(S)
RT
VB
R
Q
HV
LEVEL
SHIFT
+
-
R
S
HO
PULSE
FILTER
R
R
S
Q
Q
PULSE
GEN
DEAD
TIME
VS
+
-
VCC
R/2
R/2
15.6V
+
-
CT
LO
DELAY
LOGIC
DEAD
TIME
UV
DETECT
COM
Functional Block Diagram for IR2153D
RT
VB
R
Q
HV
+
-
LEVEL
R
S
HO
PULSE
FILTER
SHIFT
R
R
S
Q
Q
PULSE
GEN
DEAD
TIME
VS
D1
+
-
VCC
R/2
R/2
15.6V
+
-
CT
LO
DELAY
LOGIC
DEAD
TIME
UV
DETECT
COM
NOTE: The D1 is a separate die.
6
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IR2153(D)(S)& (PbF)
NOTE:For new designs, we recommend
IR’s new product IRS2153D
8 Lead PDIP
01-3003 01
8 Lead SOIC
01-0021 08
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7
IR2153(D)(S)& (PbF)
NOTE:For new designs, we recommend
IR’s new product IRS2153D
VCLAMP
Vccuv+
Vcc
RT
CT
2/3
RT ,CT
1/3
td
LO
td
HO
Figure 1. Input/Output Timing Diagram
(HO)
(LO)
Figure 2. Switching Time Waveform Definitions
RT
50%
50%
90%
10%
HO
DT
90%
LO
10%
Figure 3. Deadtime Waveform Definitions
8
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IR2153(D)(S)& (PbF)
NOTE:For new designs, we recommend
IR’s new product IRS2153D
LEADFREE PART MARKING INFORMATION
Part number
Date code
IRxxxxxx
YWW?
IR logo
?XXXX
Pin 1
Identifier
Lot Code
(Prod mode - 4 digit SPN code)
?
MARKING CODE
P
Lead Free Released
Non-Lead Free
Released
Assembly site code
Per SCOP 200-002
ORDER INFORMATION
Basic Part (Non-Lead Free)
8-Lead PDIP IR2153 order IR2153
8-Lead SOIC IR2153S order IR2153S
8-Lead PDIP IR2153D order IR2153D
Leadfree Part
8-Lead PDIP IR2153 order IR2153PbF
8-Lead SOIC IR2153S order IR2153SPbF
8-Lead PDIP IR2153D order IR2153DPbF
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
This product has been qualified per industrial level
Data and specifications subject to change without notice.
2/8/2006
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9
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