IR2301 [INFINEON]
HIGH AND LOW SIDE DRIVER; 高端和低端驱动器
| 型号： | IR2301 |
| 厂家： | 
Infineon |
| 描述： | HIGH AND LOW SIDE DRIVER |
| 文件： | 总22页 (文件大小：314K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet No. PD60162 Rev. V
( )
S
IR2106(4)
HIGH AND LOW SIDE DRIVER
Features
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Packages
Floating channel designed for bootstrap operation
•
Gate drive supply range from 10 to 20V (IR2106(4))
Undervoltage lockout for both channels
3.3V, 5V and 15V input logic compatible
Matched propagation delay for both channels
Logic and power ground +/- 5V offset.
Lower di/dt gate driver for better noise immunity
Outputs in phase with inputs (IR2106)
•
8-Lead SOIC
8-Lead PDIP
•
•
•
•
•
14-Lead SOIC
14-Lead PDIP
•
Description
2106/2301//2108//2109/2302/2304Feature Comparison
The IR2106(4)(S) are high voltage,
high speed power MOSFET and
IGBT drivers with independent high
and low side referenced output chan-
nels. Proprietary HVIC and latch
immune CMOS technologies enable
ruggedized monolithic construction.
The logic input is compatible with
standard CMOS or LSTTL output,
down to 3.3V logic. The output driv-
Cross-
Input
logic
conduction
prevention
logic
Part
Dead-Time
Ground Pins
Ton/Toff
2106/2301
21064
2108
21084
2109/2302
21094
COM
VSS/COM
COM
VSS/COM
COM
HIN/LIN
HIN/LIN
no
none
220/200
220/200
Internal 540ns
Programmable 0.54~5µs
Internal 540ns
yes
IN/SD
yes
yes
750/200
160/140
Programmable 0.54~5µs
VSS/COM
HIN/LIN
Internal 100ns
2304
COM
ers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating
channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which
operates up to 600 volts.
Typical Connection
up to 600V
VCC
VCC
HIN
LIN
VB
HO
VS
HIN
LIN
TO
LOAD
COM
LO
IR2106
up to 600V
HO
VB
VS
VCC
HIN
VCC
HIN
LIN
TO
LOAD
LIN
(Refer to Lead Assignments for cor-
rect pin configuration). This/These
diagram(s) show electrical connec-
tions only. Please refer to our Appli-
cation Notes and DesignTips for
proper circuit board layout.
IR21064
VSS
COM
LO
VSS
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IR2106(4)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
Symbol
Definition
High side floating absolute voltage
High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Min.
Max.
Units
V
-0.3
625
B
V
V
- 25
V
+ 0.3
+ 0.3
25
S
B
S
B
V
HO
V
- 0.3
V
B
V
CC
-0.3
-0.3
V
V
V
+ 0.3
+ 0.3
+ 0.3
LO
CC
CC
V
IN
Logic input voltage
V
- 0.3
V
SS
CC
V
Logic ground (IR21064 only)
V
- 25
V
CC
SS
dV /dt
S
Allowable offset supply voltage transient
—
50
V/ns
W
P
D
Package power dissipation @ T ≤ +25°C
(8 lead PDIP)
—
1.0
A
(8 lead SOIC)
(14 lead PDIP)
(14 lead SOIC)
(8 lead PDIP)
(8 lead SOIC)
(14 lead PDIP)
(14 lead SOIC)
—
—
—
—
—
—
—
—
-50
—
0.625
1.6
1.0
Rth
Thermal resistance, junction to ambient
125
200
75
JA
°C/W
°C
120
150
150
300
T
T
Junction temperature
J
Storage temperature
S
T
L
Lead temperature (soldering, 10 seconds)
2
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IR2106(4)
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The V and V offset rating are tested with all supplies biased at 15V differential.
S
SS
Symbol
Definition
Min.
S
Max.
Units
VB
High side floating supply absolute voltage IR2106(4)
High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage IR2106(4)
Low side output voltage
V
+ 10
V + 20
S
V
Note 1
600
S
V
HO
V
V
B
S
V
CC
10
0
20
V
V
V
CC
LO
V
Logic input voltage
V
V
IN
SS
-5
CC
V
Logic ground (IR21064 only)
5
SS
T
A
Ambient temperature
-40
125
°C
Note 1: Logic operational for V of -5 to +600V. Logic state held for V of -5V to -V . (Please refer to the Design Tip
S
S
BS
DT97-3 for more details).
Dynamic Electrical Characteristics
V
(V , V ) = 15V, V = COM, C = 1000 pF, T = 25°C.
L A
SS
BIAS CC BS
Symbol
Definition
Min. Typ. Max. Units Test Conditions
t
Turn-on propagation delay
Turn-off propagation delay
Delay matching, HS & LS turn-on/off
Turn-on rise time
—
—
—
—
—
220
200
0
300
280
30
V = 0V
S
on
t
V
S
= 0V or 600V
off
MT
nsec
t
t
150
50
220
80
V
V
= 0V
= 0V
r
S
S
Turn-off fall time
f
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IR2106(4)
Static Electrical Characteristics
V
(V , V ) = 15V, V = COM and T = 25°C unless otherwise specified. The V , V and I parameters are
CC BS SS A IL IH IN
BIAS
referenced to V /COM and are applicable to the respective input leads. The V , I and Ron parameters are referenced to
SS
O O
COM and are applicable to the respective output leads: HO and LO.
Symbol
Definition
Logic “1” input voltage (IR2106(4))
Min. Typ. Max. Units Test Conditions
2.9
VCC = 10V to 20V
V
—
—
IH
VCC = 10V to 20V
V
Logic “0” input voltage (IR2106(4))
—
—
—
—
20
60
—
0.8
1.4
0.6
50
IL
V
V
OH
High level output voltage, V
- V
0.8
0.3
—
I
I
= 20 mA
= 20 mA
BIAS
O
O
V
Low level output voltage, V
O
OL
LK
O
I
Offset supply leakage current
Quiescent V supply current
V = V = 600V
B S
I
75
130
180
V
= 0V or 5V
= 0V or 5V
QBS
QCC
BS
IN
IN
I
Quiescent V
supply current
120
V
CC
µA
I
Logic “1” input bias current
VIN = 5V (IR2106(4))
Logic “0” input bias current
VIN = 0V (IR2106(4))
and V supply undervoltage positive going
IN+
—
5
20
I
IN-
—
—
2
V
V
CC
8.0
8.9
9.8
CCUV+
BS
V
threshold
BSUV+
V
V
and V supply undervoltage negative going
7.4
0.3
8.2
0.7
9.0
—
CCUV-
CC
BS
V
V
threshold
BSUV-
V
Hysteresis
CCUVH
V
BSUVH
I
Output high short circuit pulsed current
Output low short circuit pulsed current
120
250
200
350
—
—
V = 0V,
O
O+
PW ≤ 10 µs
= 15V,
mA
I
V
O
O-
PW ≤ 10 µs
4
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IR2106(4)
Functional Block Diagrams
VB
UV
IR2106
DETECT
HO
R
R
S
Q
PULSE
FILTER
HV
LEVEL
SHIFTER
VSS/COM
VS
HIN
LEVEL
SHIFT
PULSE
GENERATOR
VCC
LO
UV
DETECT
VSS/COM
LEVEL
LIN
DELAY
COM
SHIFT
VB
UV
IR21064
DETECT
HO
R
R
S
Q
PULSE
FILTER
HV
LEVEL
SHIFTER
VSS/COM
LEVEL
VS
HIN
PULSE
SHIFT
GENERATOR
VCC
LO
UV
DETECT
VSS/COM
LEVEL
LIN
DELAY
COM
SHIFT
VSS
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IR2106(4)
Lead Definitions
Symbol Description
HIN
LIN
Logic input for high side gate driver output (HO), in phase
Logic input for low side gate driver output (LO), in phase
Logic Ground (IR21064 only)
High side floating supply
VSS
V
B
HO
High side gate drive output
V
V
High side floating supply return
Low side and logic fixed supply
Low side gate drive output
S
CC
LO
COM
Low side return
Lead Assignments
V
V
B
1
2
3
4
V
1
2
3
4
V
CC
B
8
7
8
CC
HO
HO
HIN
LIN
HIN
LIN
7
6
5
V
S
V
S
6
5
LO
LO
COM
COM
8 Lead PDIP
8 Lead SOIC
IR2106
IR2106S
14
13
12
11
10
9
14
1
V
CC
1
2
3
4
5
6
7
V
CC
V
V
13
12
11
10
9
2
3
4
5
6
7
HIN
LIN
HIN
LIN
B
B
HO
HO
V
S
V
S
VSS
COM
LO
VSS
COM
LO
8
8
14 Lead PDIP
14 Lead SOIC
IR21064
IR21064S
6
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IR2106(4)
HIN
LIN
HO
LO
Figure 1. Input/Output Timing Diagram
50%
50%
HIN
LIN
t
on
t
t
f
t
off
r
90%
90%
HO
LO
10%
10%
Figure 2. Switching Time Waveform Definitions
50%
50%
HIN
LIN
LO
HO
10%
MT
MT
90%
LO
HO
Figure 3. Delay Matching Waveform Definitions
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IR2106(4)
500
400
500
400
300
200
100
0
M ax.
Typ.
300
M ax
200
Typ.
100
0
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (oC)
VBIAS Supply Voltage (V)
Figure 4A. Turn-on Propagation Delay
vs. Temperature
Figure 4B. Turn-on Propagation Delay
vs. Supply Voltage
500
400
300
200
100
0
500
400
300
200
100
0
M ax.
Typ.
M ax.
Typ.
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (oC)
VBIAS Supply Voltage (V)
Figure 5A. Turn-off Propagation Delay
vs. Temperature
Figure 5B. Turn-off Propagation Delay
vs. Supply Voltage
8
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IR2106(4)
500
400
300
500
400
300
200
100
0
M ax.
Typ.
200
100
0
M ax.
Typ.
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
Temperature (oC)
VBIAS Supply Voltage (V)
Figure 6A. Turn-on Rise Time
vs. Temperature
Figure 6B. Turn-on Rise Time
vs. Supply Voltage
200
200
150
100
50
150
100
M ax.
M ax.
Typ.
Typ.
50
0
0
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (oC)
VBIAS Supply Voltage (V)
Figure 7A. Turn-off Fall Time
vs. Temperature
Figure 7B. Turn-off Fall Time
vs. Supply Voltage
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IR2106(4)
8
7
6
5
4
8
7
6
5
4
3
2
M ax.
3
M ax.
2
1
0
1
0
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (oC)
VCC Supply Voltage (V)
Figure 8A. Logic “1” Input Voltage
vs. Temperature
Figure 8B. Logic “1” Input Voltage
vs. Supply Voltage
4.0
4.0
3.2
3.2
2.4
1.6
0.8
0.0
2.4
1.6
M in.
M in.
0.8
0.0
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (oC)
VCC Supply Voltage (V)
Figure 9A. Logic “0” Input Voltage
vs. Temperature
Figure 9B. Logic “0” Input Voltage
vs. Supply Voltage
10
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IR2106(4)
4
4
3
2
1
0
3
2
M ax.
Typ.
M ax.
Typ.
1
0
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (oC)
VBIAS Supply Voltage (V)
Figure 10A. High Level Output Voltage
vs. Temperature
Figure 10B. High Level Output Voltage
vs. Supply Voltage
1.5
1.2
0.9
1.5
1.2
0.9
0.6
0.3
0
Max.
Typ.
0.6
0.3
0
M ax.
Typ.
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (oC)
VBIAS Supply Voltage (V)
Figure 11A. Low Level Output Voltage
vs. Temperature
Figure 11B. Low Level Output Voltage
vs. Supply Voltage
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IR2106(4)
500
400
300
500
400
300
200
100
0
200
100
M ax.
0
M ax.
-50
-25
0
25
50
75
100
125
0
100
200
300
400
500
600
Temperature (oC)
VB Boost Voltage (V)
Figure 12A. Offset Supply Leakage Current
vs. Temperature
Figure 12B. Offset Supply Leakage Current
vs. Supply Voltage
400
300
400
300
200
100
0
200
100
0
M ax.
Typ.
M ax.
Typ.
M in.
M in.
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (oC)
Figure 13A. V Supply Current
VBS Supply Voltage (V)
Figure 13B. V
BS
Supply Current
BS
vs. Temperature
vs. Supply Voltage
12
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IR2106(4)
400
300
200
100
0
400
300
M ax.
200
100
M ax.
Typ.
M in.
Typ.
M in.
0
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
o
Tem perature
(
C)
VCC Supply Voltage (V)
Figure 14A. Quiescent V
Supply Current
Figure 14B. Quiescent V
Supply Current
CC
CC
vs. Temperature
vs. V
Supply Voltage
CC
60
50
40
30
20
60
50
40
30
20
10
0
M ax.
Typ.
M ax.
Typ.
10
0
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (oC)
VCC Supply Voltage (V)
Figure 15A. Logic “1” Input Current
vs. Temperature
Figure 15B. Logic “1” Bias Current
vs. Supply Voltage
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IR2106(4)
5
4
3
2
1
0
5
4
3
M ax.
M ax.
2
1
0
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
VCC Supply Voltage (V)
Temperature (oC)
Figure 16A. Logic “0” Input Current
vs. Temperature
Figure 16B. Logic “0” Input Currentt
vs. Supply Voltage
12
11
11
10
9
10
9
M ax.
Typ.
M ax.
Typ.
M in.
8
M in.
8
7
7
6
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
Temperature (oC)
Temperature (oC)
Figure 18. V
Undervoltage Threshold (-)
CC
vs. Temperature
Figure 17. V
Undervoltage Threshold (+)
CC
vs. Temperature
14
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IR2106(4)
12
11
10
9
11
10
9
M ax.
M ax.
Typ.
Typ.
M in.
8
M in.
7
8
6
7
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
Temperature (oC)
Temperature (oC)
Figure 19. V
Undervoltage Threshold (+)
Figure 20. V
Undervoltage Threshold (-)
BS
BS
vs. Temperature
vs. Temperature
500
500
400
300
200
100
0
400
300
Typ.
M in.
200
100
0
Typ.
M in.
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
Temperature (oC)
VBIAS Supply Voltage (V)
Figure 21A. Output Source Current
vs. Temperature
Figure 21B. Output Source Current
vs. Supply Voltage
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IR2106(4)
600
600
500
500
Typ.
400
400
300
200
M in.
300
Typ.
M in.
200
100
0
100
0
-50
-25
0
25
50
75
100
125
10
12
14
16
18
20
Temperature (oC)
VBIAS Supply Voltage (V)
Figure 22A. Output Sink Current
vs. Temperature
Figure 22B. Output Sink Currentt
vs. Supply Voltage
0
-2
140
120
100
80
Typ.
-4
140V
70V
0V
-6
60
40
-8
20
-10
1
10
100
1000
10
12
14
16
18
20
VBS Floating Supply Voltage (V)
Frequency (KHz)
Figure 23. Maximum V Negative Offset
S
Figure 24. IR2106 vs. Frequency (IRFBC20),
vs. Supply Voltage
Rgate=33Ω, VCC=15V
16
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IR2106(4)
140
120
100
80
140
120
100
80
140V
140V
70V
0V
70V
0V
60
60
40
40
20
20
1
10
100
1000
1
10
100
1000
Frequency (KHz)
Frequency (KHz)
Figure 25. IR2106 vs. Frequency (IRFBC30),
Figure 26. IR2106 vs. Frequency (IRFBC40),
Rgate=22 , VCC=15V
Ω
Rgate=15 , VCC=15V
Ω
140V 70V
0V
140
120
100
80
140
120
100
80
60
140V
70V
60
40
40
0V
20
20
1
10
100
1000
1
10
100
1000
Frequency (KHz)
Frequency (KHz)
Figure 28. IR21064 vs. Frequency (IRFBC20),
Rgate=33 , VCC=15V
Figure 27. IR2106 vs. Frequency (IRFPE50),
Rgate=10 , VCC=15V
Ω
Ω
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IR2106(4)
140
120
100
80
140
120
100
80
140V
70V
0V
140V
70V
0V
60
60
40
40
20
20
1
1
10
100
1000
10
100
1000
Frequency (KHz)
Frequency (KHz)
Figure 29. IR21064 vs. Frequency (IRFBC30),
Figure 30. IR21064 vs. Frequency (IRFBC40),
Rgate=22 , VCC=15V
Ω
Rgate=15 , VCC=15V
Ω
140V
70V
140
140
120
100
80
120
100
80
0V
140V
70V
0V
60
60
40
40
20
20
1
10
100
1000
1
10
100
1000
Frequency (KHz)
Frequency (KHz)
Figure 32. IR2106S vs. Frequency (IRFBC20),
Figure 31. IR21064 vs. Frequency (IRFPE50),
Rgate=33 , VCC=15V
Ω
R=10 , V=15V
Ω
18
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IR2106(4)
140V70V
140
120
100
80
140
120
100
80
140V
70V
0V
0V
60
60
40
40
20
20
1
10
Frequency (KHz)
Figure 34. IR2106S vs. Frequency (IRFBC40),
100
1000
1
10
100
1000
Frequency (KHz)
Figure 33. IR2106S vs. Frequency (IRFBC30),
Rgate=15 , VCC=15V
Rgate=22 , VCC=15V
Ω
Ω
140V70V 0V
140
120
100
80
140
120
100
80
60
60
140V
70V
0V
40
40
20
20
1
10
100
1000
1
10
100
1000
Frequency (KHz)
Frequency (KHz)
Figure 35. IR2106S vs. Frequency
Figure 36. IR21064S vs. Frequency (IRFBC20),
(IRFPE50), Rgate=10 , VCC=15V
Rgate=33 , VCC=15V
Ω
Ω
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IR2106(4)
140
120
100
80
140
120
100
80
140V
70V
0V
140V
70V
0V
60
60
40
40
20
20
1
1
10
100
1000
10
100
1000
Frequency (KHz)
Frequency (KHz)
Figure 37. IR21064S vs. Frequency (IRFBC30),
Figure 38. IR21064S vs. Frequency (IRFBC40),
Rgate=22 , VCC=15V
Ω
Rgate=15 , VCC=15V
Ω
140V70V
0V
140
120
100
80
60
40
20
1
10
100
1000
Frequency (KHz)
Figure 39. IR21064S vs. Frequency (IRFPE50),
Rgate=10 , VCC=15V
Ω
20
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( )
S
IR2106(4)
Case Outlines
01-6014
01-3003 01 (MS-001AB)
8 Lead PDIP
IN C HES
MIN MAX
.0532 .0688
MILLIMETERS
DIM
A
D
B
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
FOOTPRINT
8X 0.72 [.028]
5
A
A1 .0040 .0098
b
c
D
E
e
.013
.0075 .0098
.189 .1968
.020
8
1
7
2
6
3
5
6
H
E
.1497 .1574
.050 BASIC
0.25 [.010]
A
1.27 BASIC
0.635 BASIC
6.46 [.255]
4
e 1 .025 BASIC
H
K
L
.2284 .2440
.0099 .0196
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
.016
0°
.050
8°
3X 1.27 [.050]
e
6X
8X 1.78 [.070]
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
8X L
A1
B
8X b
7
0.25 [.010]
C
NOTES:
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. C O NTRO LL ING DIM EN SIO N: M ILL IM ETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
01-6027
01-0021 11 (MS-012AA)
8 Lead SOIC
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21
( )
S
IR2106(4)
01-6010
01-3002 03 (MS-001AC)
14 Lead PDIP
01-6019
01-3063 00 (MS-012AB)
14 Lead SOIC (narrow body)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice. 1/27/2004
22
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