IR250BG12DPBF [INFINEON]
Silicon Controlled Rectifier, 39.25A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INCH, WAFER;
| 型号： | IR250BG12DPBF |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 39.25A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INCH, WAFER 栅 栅极 |
| 文件： | 总3页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I0200J rev. B 01/01
IR250BG..DCB
PHASE CONTROL THYRISTORS
Junction Size
:
:
:
:
:
Square 250 mils
4"
Wafer Size
VRRM/ VDRM Class
PassivationProcess
Reference IR Packaged Part
600 to 1200 V
Glassivated MESA
40TPS Series
Major Ratings and Characteristics
Parameters
Units
Test Conditions
VTM
MaximumOn-stateVoltage
1.3V
TJ =25°C, IT =25A
VRRM/VDRM ReverseBreakdownVoltage
600to1200V TJ = 25°C, IRRM = 100 µA
(1)
IGT
VGT
IH
Max.RequiredDCGateCurrenttoTrigger
150mA
2 V
TJ=25°C,anodesupply=6V,resistiveload
TJ=25°C,anodesupply=6V,resistiveload
Max.RequiredDCGateVoltagetoTrigger
HoldingCurrentRange
5 to 200 mA Anodesupply=6V,resistiveload
IL
MaximumLatchingCurrent
400mA
Anodesupply=6V,resistiveload
(1) Nitrogen flow on die edge.
Mechanical Characteristics
NominalBackMetalComposition,Thickness
Cr-Ni-Ag(1KA-4KA -6KA)
100%Al,(20µm)
NominalFrontMetalComposition,Thickness
ChipDimensions
250x250mils(seedrawing)
100 mm, with std. <110> flat
370 µm ± 10 µm
Wafer Diameter
Wafer Thickness
Maximum Width of Sawing Line
Reject Ink Dot Size
130µm
0.25mmdiameterminimum
Seedrawing
InkDotLocation
RecommendedStorageEnvironment
Storageinoriginalcontainer, indessicated
nitrogen,withnocontamination
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1
IR250BG..DCB
Bulletin I0200J rev. B 01/01
Ordering Information Table
Device Code
IR 250
B
G
12
D
CB
3
4
5
6
1
2
7
1
2
-
-
International Rectifier Device
Chip Dimension in Mils
3
4
5
6
7
-
-
-
-
-
Type of Device: B = Wire Bondable SCR
Passivation Process: G = Glassivated MESA
Voltage code: Code x 100 = VRRM
Metallization: D = Silver (Anode) - Aluminium (Cathode)
CB = Probed Uncut Die (wafer in box)
None = Probed Die in chip carrier
Outline Table
All dimensions are in millimeters
2
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IR250BG..DCB
Bulletin I0200J rev. B 01/01
Wafer Layout
TOP VIEW
N° 148 Basic Cells
ø 100 ± 0.5
32.5 ± 2.5
All dimensions are in millimiters
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