IR2520S [INFINEON]

Switching Regulator/Controller, PDSO8,;
IR2520S
型号: IR2520S
厂家: Infineon    Infineon
描述:

Switching Regulator/Controller, PDSO8,

光电二极管
文件: 总10页 (文件大小:107K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Data Sheet No. PD60212  
ADVANCE DATA  
IR2520D(S)  
ADAPTIVE BALLAST CONTROL IC  
Features  
Packages  
600V Half Bridge Driver  
Integrated Bootstrap Diode  
Adaptive zero-voltage switching (ZVS)  
Internal Crest Factor Over-Current Protection  
0 to 5VDC Voltage Controlled Oscillator  
Programmable minimum frequency  
Micropower Startup Current (150uA)  
Internal 15.6V zener clamp on Vcc  
Small DIP8/SO8 Package  
8 Lead SOIC  
8-Lead PDIP  
Description  
The IR2520D is a complete adaptive ballast controller and 600V half-bridge driver integrated into a single IC  
for fluorescent lighting applications. The IC includes adaptive zero-voltage switching (ZVS), internal crest  
factor over-current protection, as well as an integrated bootstrap diode. The heart of this IC is a voltage  
controlled oscillator with externally programmable minimum frequency. All of the necessary ballast features  
are integrated in a small 8-pin DIP or SOIC package.  
Typical Application Diagram  
L1  
C2  
RSUPPLY  
DCP1  
BR  
CFL LAMP  
M1  
VCC  
VB  
8
LRES  
CCP  
1
C1  
CVCC  
COM  
2
HO  
7
F1  
CBOOT  
M2  
RFMIN  
FMIN  
3
VS  
6
CRES  
VCO  
4
LO  
5
CVCO  
C3  
DCP2  
Please note that this data sheet contains advance information which could change before product is released to production.  
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1
ADVANCE DATA  
IR2520D(S)  
Absolute Maximum Ratings  
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-  
eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance  
and power dissipation ratings are measured under board mounted and still air conditions.  
Symbol  
Definition  
Min.  
Max.  
Units  
V
V
High side floating supply voltage  
-0.3  
625  
B
S
High side floating supply offset voltage  
High side floating output voltage  
Low side output voltage  
V
- 25  
V
V
+ 0.3  
+ 0.3  
+ 0.3  
B
B
B
V
V
V
- 0.3  
S
HO  
V
-0.3  
V
LO  
CC  
I
Maximum allowable output current (HO,LO) due to external  
power transistor miller effect  
-500  
500  
mA  
OMAX  
V
Voltage controlled oscillator input voltage  
Supply current (Note 1)  
-0.3  
-20  
-50  
V
+ 0.3  
20  
V
VCO  
CC  
I
mA  
V/ns  
CC  
dV /dt  
Allowable offset voltage slew rate  
50  
1
S
P
Package power dissipation @ T +25°C  
8-Lead PDIP  
8-Lead SOIC  
8-Lead PDIP  
8-Lead SOIC  
D
A
W
PD=(T  
-T )Rth  
JA  
0.625  
125  
200  
150  
150  
300  
JMAX  
A
Rth  
Thermal resistance, junction to ambient  
JA  
°C/W  
T
Junction temperature  
-55  
-55  
J
°C  
T
Storage temperature  
S
T
L
Lead temperature (soldering, 10 seconds)  
Note 1: This IC contains a zener clamp structure between the chip VCC and COM, which has a nominal breakdown voltage  
of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source greater than the  
VCLAMP specified in the Electrical Characteristics section.  
Recommended Operating Conditions  
For proper operation the device should be used within the recommended conditions.  
Symbol  
Definition  
Min.  
Max.  
Units  
V
High side floating supply voltage  
V
- 0.7  
V
BS  
CC  
CLAMP  
600  
V
V
Steady state high side floating supply offset voltage  
Supply voltage  
-1  
S
CC  
CC  
V
V
V
CCUV+  
CLAMP  
I
Supply current  
Note 2  
10  
10  
mA  
kΩ  
V
R
FMIN  
Minimum frequency setting resistance  
VCO pin voltage  
100  
5
V
VCO  
0
T
Junction temperature  
-25  
125  
° C  
J
Note 2: Enough current should be supplied into the VCC pin to keep the internal 15.6V zener clamp diode on this pin  
regulating its voltage,  
2
VCLAMP.  
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ADVANCE DATA  
IR2520D(S)  
Electrical Characteristics  
V
V
V
= 14V +/- 0.25V, C =C =1000pF and T = 25°C unless otherwise specified.  
CC = BS = BIAS LO HO A  
Symbol  
Definition  
Min. Typ. Max. Units Test Conditions  
Supply Characteristics  
V
V
and V supply undervoltage positive going  
13.2  
10.5  
V
CC  
rising from OV  
CCUV+  
CC  
BS  
threshold  
V and V supply undervoltage negative going  
CC  
V
CCUV-  
BS  
V
threshold  
supply undervoltage lockout hysteresis  
V
V
CC  
50  
2.7  
120  
180  
1.8  
200  
UVHYS  
I
UVLO quiescent current  
V
= 11V  
= 14V  
QCCUV  
CC  
µA  
I
Fault mode quiescent current  
QCCFLT  
I
Quiescent V  
supply current  
V
CC  
QCC  
CC  
mA  
V
I
Current, f = 50kHz  
Zener clamp voltage  
1.8  
CC50k  
V
V
14.5  
15.6  
16.5  
I
= 10mA  
CLAMP  
CC  
CC  
Floating Supply Characteristics  
I
I
0
1
Quiescent V supply current  
-1  
0
5
V
V
= V  
= V  
QBS  
QBS  
BS  
HO  
HO  
S
µA  
Quiescent V supply current  
28  
2.5  
50  
BS  
B
V
Minimum required V voltage for proper HO  
BS  
V
BSMIN  
ILK  
Offset supply leakage current  
µA  
V = V = 600V  
B S  
Oscillator I/O Characteristics  
35  
100  
50  
V
=5V,R  
=0V,R  
FVCO(min)  
FVCO(max)  
D
Minimum oscillator frequency  
Maximum oscillator frequency  
Oscillator duty cycle  
CO  
FMIN=82K  
kHz  
%
V
CO  
FMIN=82K  
T
LO output deadtime  
1.5  
1.5  
1.0  
1.0  
0
DLO  
DHO  
µS  
T
HO output deadtime  
I
Preheat mode & frequency sweep mode  
Adaptive mode VCO lead changing current  
Fault mode & UVLO mode VCO lead voltage  
VCOPH  
µA  
I
VCOADPT  
V
V
VCOFLT  
Gate Driver Output Characteristics  
100  
100  
150  
100  
V
Low level output voltage (HO or LO)  
High level output voltage (HO or LO)  
Turn on rise time  
OL  
mV  
mV  
V
HL  
T
RISE  
FALL  
T
Turn off fall time  
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3
ADVANCE DATA  
IR2520D(S)  
Electrical Characteristics  
V
V
V
= 14V +/- 0.25V, C =C =1000pF and T = 25°C unless otherwise specified.  
CC = BS = BIAS LO HO A  
Symbol  
Definition  
Min. Typ. Max. Units Test Conditions  
Protection Characteristics  
V
CSCF  
Crest factor peak-to-average fault factor  
3
Minimum Frequency Setting Characteristics  
V
FMIN lead voltge during normal operation  
FMIN lead voltge during fault mode  
5.1  
0.0  
V
V
FMIN  
V
FMINFLT  
Block Diagram  
Integrated  
Bootstrap  
Diode  
VCC  
1
VB  
8
COM  
2
High-  
&
HO  
7
Low  
Side  
Half-  
Bridge  
Driver  
FMIN  
3
Voltage  
Controlled  
Oscillator  
VS  
6
VCO  
4
LO  
5
Fault  
Logic  
Adaptive  
ZVS &  
MCS  
VS  
Sensing  
4
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ADVANCE DATA  
IR2520D(S)  
Lead Definitions  
Lead Assignments  
Symbol Description  
V
Supply voltage  
CC  
1
2
3
4
8
VB  
VCC  
COM  
FMIN  
VCO  
COM  
FMIN  
VCO  
LO  
IC power and signal ground  
Minimum frequency setting  
Voltage controlled oscillator input  
Low side gate driver output  
High side floating return  
7 HO  
6
5
VS  
LO  
V
S
HO  
VB  
High side gate driver output  
High side gate driver floating supply  
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5
ADVANCE DATA  
IR2520D(S)  
State Diagram  
Power Turned  
On  
UVLO Mode  
1/2-Bridge Off  
IQCC  
µA  
150  
VCO = 0V  
FMIN = 0V  
VCC < 10.5V  
(UVLO-)  
VCC > 13.2V  
(UVLO+)  
FAULT Mode  
1/2 -Bridge Off  
VCO = 0V  
IQCC  
µA  
150  
FMIN = 0V  
VCC < 10.5V  
(UVLO-)  
Frequency Sweep Mode  
FMIN = 5.1V  
Crest Factor > 3  
(for 70 cycles of LO)  
VCO ramps up, frequency ramps down  
Crest Factor Enabled @ VCO > 2V  
ZVS Enabled @ VCO > 2V  
Lamp Ignites  
RUN Mode  
VCO = 5.2V, Frequency = fmin  
or  
If non-ZVS detected then VCO decreases  
and frequency increases to maintain ZVS  
6
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ADVANCE DATA  
IR2520D(S)  
During UVLO mode, the high and low-side driver outputs,  
HO and LO, are both low and pin VCO is pulled down to  
COM for resetting the starting frequency to the maximum.  
Functional Description  
Under-voltage Lock-Out Mode  
The under-voltage lockout mode (UVLO) is defined as the  
state the IR2520D is in when VCC is below the turn-on  
threshold of the IC. The IR2520D under voltage lock-out is  
designed to maintain an ultra low supply current (<200uA),  
and to guarantee that the IR2520D is fully functional before  
the high and low side output drivers are activated.  
Frequency Sweep Mode  
When VCC exceeds UVLO+ threshold, the IR2520D enters  
frequency sweep mode. An internal current source charges  
the external capacitor on pin VCO, CVCO, and the voltage on  
pin VCO starts ramping up linearly. The frequency ramps  
down towards the resonance frequency of the high-Q ballast  
output stage causing the lamp voltage and load current to  
increase. When the voltage on pin VCO exceeds 2V, the  
crest factor detection and zero-voltage switching (ZVS) are  
both enabled. The voltage on pin VCO continues to increase  
and the frequency keeps decreasing until the lamp ignites,  
or, the internal crest factor threshold is reached (see Fault  
Mode section). If the lamp ignites successfully, the voltage  
on pin VCO continues to increase until it internally limits at  
5.2V. The frequency stops decreasing and stays at the  
minimum frequency as programmed by an external resistor,  
RFMIN, on pin FMIN. The minimum frequency should be  
set below the high-Q resonance frequency of the ballast  
output stage to ensure that the frequency ramps through  
resonance for lamp ignition. The desired preheat time can  
be set by adjusting the slope of the VCO ramp with the  
The start-up capacitor, CVCC, is charged by current through  
supply resistor, RSUPPLY, minus the start-up current drawn by  
the IR2520D. This resistor is chosen to provide sufficient  
current to supply the IR2520D from the DC bus. CVCC should  
be large enough to hold the voltage at Vcc above the UVLO  
threshold for one half cycle of the line voltage as it will only  
be charged at the peak. Once the capacitor voltage on VCC  
reaches the start-up threshold, the IR2520D turns on and  
then HO and LO start oscillating.  
An internal bootstrap diode between Vcc and VB and exter-  
nal supply capacitor, CBOOT, determine the supply voltage for  
the high side driver circuitry. An external charge pump circuit  
consisting of a capacitor, CCP, and two diodes, DCP1 and DCP2  
,
supplies the voltage for the low side driver circuitry. To guar-  
antee that the high-side supply is charged up before the first  
pulse on pin HO, the first pulse from the output drivers comes  
from the LO pin. LO may oscillate several times until VB-VS  
exceeds UVBS+ (9 Volts) and the high-side driver is enabled.  
external capacitor, CVCO  
.
VBUS (+)  
VBSU (+)  
DCP1  
RSUPPLY  
DCP1  
DBOOT  
VCC  
1
M1  
Half  
Bridge  
Output  
VB  
8
15.6 V  
CVCC  
HO  
7
COM  
2
VCC  
COM  
M1  
Half  
Bridge  
Output  
DBOOT  
VB  
8
CBOOT  
M2  
ILOAD  
Half  
Bridge  
Driver  
FMIN  
3
1
2
VS  
6
CVCC  
VCO  
CCP  
HO  
RFMIN  
LO  
7
CLAMP  
VCO  
ILOA  
D
5
CBOOT  
M2  
Half  
Bridge  
Driver  
VCO  
VS  
6
O
O
4
VCO  
CCP  
4
CVCO  
LO  
5
VS  
Sensing  
Fault  
Logic  
CVCO  
DCP2  
Load  
Return  
VBUS (-)  
DCP2  
Load  
Return  
Figure 2, Frequency sweep circuitry  
VBSU (-)  
Figure 1, Start-up circuitry  
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7
ADVANCE DATA  
IR2520D(S)  
Run Mode  
Fault Mode  
The frequency decreases during the frequency sweep mode  
until the lamp ignites and the ballast output stage becomes  
a low-Q RCL circuit. The frequency then deceases further  
until the VCO pin voltage limits at 5.2V and the minimum  
frequency is reached. The resonant inductor, resonant  
capacitor, DC bus voltage and minimum frequency determine  
the running lamp power. The IC stays at this minimum  
frequency unless non-zero-voltage switching (non-ZVS) is  
detected at the VS pin. If the voltage has not slewed entirely  
to COM during the deadtime such that there is voltage across  
the external low-side switch before LO turns-on, then the  
system is operating too close to resonance and destructive  
non-ZVS capacitive mode switching occurs. To correct for  
this, a pulse of current is sinked from the VCO pin to discharge  
the external capacitor, CVCO, slightly causing the frequency  
to increase. The VCO capacitor then charges up during the  
rest of the cycle slowly due to an internal current source.  
The frequency is therefore trying to decrease towards  
resonance by charging the VCO capacitor and the adaptive  
ZVS circuit “nudges” the frequency back up slightly above  
resonance when non-ZVS occurs. The circuit then remains  
in this closed-loop adaptive ZVS mode during running and  
maintains ZVS operation with changing line conditions,  
component tolerance variations and lamp/load variations. The  
600V fabrication process used in the development of this IC  
allows for the VS pin to be accurately measured with an  
internal high-voltage MOSFET for zero volts during the non-  
overlapping deadtime, while withstanding the high DC bus  
voltage during other portions of the switching cycle when  
the high-side MOSFET is turned on and VS is at the DC bus  
potential.  
Should a lamp non-strike condition occur where the filaments  
are intact but the lamp does not ignite, the lamp voltage and  
output stage current will increase during the ignition ramp  
until the resonant inductor saturates or capacitive mode  
switching occurs. To detect this, the IC performs a  
measurement of the VS pin during the on-time of the LO pin.  
The voltage at the VS pin during the on-time of pin LO is  
determined by the current flowing through the on-resistance  
(RDSon) of the external low-side MOSFET. The RDSon of  
the external low-side MOSFET therefore serves as the  
current-sensing resistor and VS serves as the current sensing  
pin on the IC. Sensing the half-bridge current in this way  
eliminates the need for an external current-sensing resistor  
and an additional current-sensing pin on the IC. An internal  
high-voltage MOSFET is turned on when VS is low (when  
the external low-side MOSFET is ‘ on’ ) for performing the  
current sensing, and is turned off during the rest of the  
switching cycle for withstanding the high-voltage when VS is  
equal to the DC bus voltage (when the external high-side  
MOSFET is ‘ on’ ). Since the RDSon has a positive  
temperature coefficient, the IC performs an internal crest  
factor measurement for detecting excessive dangerous  
currents or inductor saturation which can occur during a lamp  
non-strike fault condition. Performing the crest factor  
measurement provides a relative current measurement which  
cancels temperature and/or tolerance variations of the RDSon  
of the external low-side half-bridge MOSFET. Should the peak  
current during the on-time of LO exceed a threshold of 3  
times the average current for approximately 70 switching  
cycles of LO, the IC will enter Fault Mode and both gate  
driver outputs will be latched ‘ low’ . To reset the IC back to  
frequency sweep mode VCC must be recycled below and  
above the internal UVLO thresholds.  
BUVS  
(+)  
DCP1  
Should an open filament lamp fault occur, hard-switching will  
occur at the half-bridge. The crest factor circuit will detect  
this condition as well and after approximately 70 cycles of  
the fault occurance the IC will enter Fault Mode and both  
gate driver outputs will be latched ‘ low’ . To reset the IC back  
to frequency sweep mode VCC must be recycled below and  
above the internal UVLO thresholds  
VCC  
1
M1  
Half  
Bridge  
Output  
DBOOT  
Half  
VB  
8
CVCC  
COM  
VCO  
HO  
O
O
15.6V  
2
4
7
CBOOT  
M2  
ILOAD  
VS  
6
Bridge  
VCO  
CCP  
Driver  
CVCO  
LO  
5
O
O
Fault  
Logic  
VS  
Sensing  
Adaptive  
ZVMCS  
Logic  
DCP2  
Load  
Return  
V
(-)  
BUS  
Figure 3, ZVS circuitry  
8
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ADVANCE DATA  
IR2520D(S)  
Case outlines  
01-6014  
01-3003 01 (MS-001AB)  
8-Lead PDIP  
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9
ADVANCE DATA  
IR2520D(S)  
IN C H E S  
MILLIMETERS  
DIM  
A
D
B
MIN  
.0532  
MAX  
.0688  
.0098  
.020  
MIN  
1.35  
0.10  
0.33  
0.19  
4.80  
3.80  
MAX  
1.75  
0.25  
0.51  
0.25  
5.00  
4.00  
FOOTPRINT  
8X 0.72 [.028]  
5
A
A1 .0040  
b
c
.013  
.0075  
.189  
.0098  
.1968  
.1574  
8
1
7
2
6
3
5
4
6
D
E
e
H
E
.1497  
0.25 [.010]  
A
.050 BASIC  
1.27 BASIC  
6.46 [.255]  
e 1 .025 BASIC  
0.635 BASIC  
H
K
L
y
.2284  
.0099  
.016  
0°  
.2440  
.0196  
.050  
8°  
5.80  
0.25  
0.40  
0°  
6.20  
0.50  
1.27  
8°  
3X 1.27 [.050]  
e
6X  
8X 1.78 [.070]  
K x 45°  
e1  
A
C
y
0.10 [.004]  
8X c  
8X L  
A1  
B
8X b  
7
0.25 [.010]  
C A  
NOTES:  
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.  
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].  
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.  
2. CONTROLLING DIMENSION: MILLIMETER  
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.  
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].  
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].  
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.  
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO  
A SUBSTRATE.  
01-6027  
01-0021 11 (MS-012AA)  
8 Lead SOIC  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105  
Data and specifications subject to change without notice. 3/19/2003  
10  
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