IR3101 [INFINEON]
Half-Bridge FredFet and Integrated Driver; 半桥FREDFET和集成驱动器
| 型号： | IR3101 |
| 厂家： | 
Infineon |
| 描述： | Half-Bridge FredFet and Integrated Driver |
| 文件： | 总10页 (文件大小：269K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95807 RevB
IR3101
Series
1.6A, 500V
Half-Bridge FredFet
and Integrated Driver
Description
IR3101 is a gate driver IC integrated half bridge FredFET designed for sub 250W (heat-sink-less) motor drive
applications. The sleek and compact single-in-line package is optimized for electronic motor control in
appliance applications such as fans and compressors for refrigerators. The IR3101 offers an extremely
compact, high performance half-bridge inverter, in a single isolated package for a very simple design for two-
phase and three-phase motor drivers.
Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power FredFET®
technology (HEXFET® with ultra-fast recovery body diode characteristics), enable efficient and rugged
single package construction. Propagation delays for the high and low side power FredFETs are matched
thanks to the advance IC technology.
Features
• Output power FredFets in half-bridge configuration
• High side gate drive designed for bootstrap operation
• Bootstrap diode integrated into package.
• Lower power level-shifting circuit
• Lower di/dt gate drive for better noise immunity
• Excellent latch immunity on all inputs and outputs
• ESD protection on all leads
• Isolation 1500 VRMS min
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation are measured under
board mounted and still air conditions.
Description
Parameters
Max. Values
Units
V
VDD
VB
High voltage supply
500
High side floating supply
Vo + 25
V
PD
Package power dissipation @ TC £ 80oC (per die)
Thermal resistance, junction to case
Thermal resistance, junction to ambient (note 1)
Isolation Voltage (1 min)
5.8
W
RthJC
RthJA
VISO
TJ
12
°C/W
°C/W
VRMS
°C
85
1500
Junction temperature (Power Mosfet)
Storage temperature
-40 to +150
-40 to +150
300
TS
°C
TL
Lead temperature (soldering, 10 seconds)
Maximum current rating (note 2)
°C
IO
1.6
A
(TC = 100°C)
(TC = 25°C)
1.3
A
IO
Continuous output current (VIN=5V, VCC=15V)
2
A
Note 1: under normal operational conditions: both power devices working, no heatsink
Note 2: see figure 4, fPWM=20kHz
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1
IR3101
Internal Electrical Schematic - IR3101
VB
8
VDD
11
1
VCC
2
HIN
9
Vo
IC Driver
3
LIN
5
VSS
6
COM
Figure 1: Internal connections
Recommended Operating Conditions
For proper operation, the device should be used within the recommended conditions.
Symbol
Definition
Min.
Max.
VO + 20V
450
Units
VB
High side floating supply absolute voltage
High voltage supply
VO + 10
V
V
V
V
V
VDD
VCC
VIN
VSS
-
Low side and logic fixed supply voltage
Logic input voltage
10
VSS
-5
20
VCC
Logic ground
5
Note 3: Care should be taken to avoid switching condition where the VO node flies inductively below COM by more than
5V
2
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IR3101
MOSFET Characteristics
VBIAS (VCC, VB) = 15V and TA = 25oC unless otherwise specified. The VDD parameter is referenced to COM.
Symbol
Definition
Min.
Typ
Max. Units Conditions
Drain-to-Source breakdown
voltage
V(BR)DSS
500
-
-
V
VIN=0V, ID=250mA
Drain-to-Source leakage
current
IDSS
-
-
50
mA
VDS=500V, VIN=0V
Static drain-to-source on
resistance
RDS(on)
VSD
-
-
-
0.8
0.82
1.7
1.0
0.9
2.0
W
V
ID = 1.5A
Diode forward voltage
ID = 1.5A, VIN=0V
ID = 1.5A, TJ=125°C
ID = 1.5A, VIN=0V, TJ=125°C
Static drain-to-source on
resistance
RDS(on)
W
VSD
Diode forward voltage
Turn-On energy losses
Turn-Off energy losses
-
-
-
0.70
100
5
0.79
135
10
V
µJ
µJ
EON
EOFF
IF = 1.5A
VCC = 300V
di/dt = 200A/ms
Body-Diode reverse recovery
Llosses
EREC
-
10
20
µJ
tRR
Reverse recovery time
Turn-On energy losses
Turn-Off energy losses
-
-
-
105
150
10
180
205
17
ns
µJ
µJ
EON
EOFF
TJ=125°C
IF = 1.5A
Body-Diode reverse recovery
Llosses
EREC
-
15
35
µJ
VCC = 300V
di/dt = 200A/ms
tRR
Reverse recovery time
Output capacitance
-
-
130
-
230
100
ns
pF
Coss
VIN=0V, VDD=30V, f=1MHz
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3
IR3101
Driver IC Characteristic
Units
Symbol
Definition
Min.
Typ.
Max.
Conditions
VCC supply undervoltage
positive going threshold
VCCUV+
8.0
8.9
9.8
V
VCC supply undervoltage
negative going threshold
VCCUV-
VCCUVH
VBSUV+
VBSUV-
VBSUVH
VIH
7.4
0.3
8.0
7.4
0.3
2.9
-
8.2
0.7
8.9
8.2
0.7
-
9.0
-
V
V
V
V
V
V
V
VCC supply undervoltage
lockout hysteresis
VBS supply undervoltage
positive going threshold
9.8
9.0
-
VBS supply undervoltage
negative going threshold
VBS supply undervoltage
lockout hysteresis
Logic "1" input voltage for HIN
& LIN
-
VCC=10V to 20V
Logic "0" input voltage for HIN
& LIN
VIL
-
0.8
VCC=10V to 20V
IIN+
IIN-
Logic "1" input bias current
Logic "0" input bias current
-
-
5
1
20
2
mA
mA
HIN, LIN = 5V
HIN, LIN = 0V
Delay Matching HS & LS turn
on/ turn off
MT
-
0
30
ns
VB
VDD
8
11
HIN
0
LIN
1
VO
0
1
0
VDD
Shoot-Through
1
2
3
5
1
X
1
X
VCC
HIN
LIN
condition
X
9
Vo
IC Driver
VSS
6
COM
Figure 2: Driver input/output relation
4
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IR3101
Module Pin-Out Description
Pin
1
Symbol
VCC
Lead Definitions
Logic and internal gate drive supply
Logic input for high side gate output
Logic input for low side gate output
Not Connected
2
HIN
3
LIN
4
5
VSS
Logic Ground
6
COM
Low side MOSFET gate return
Not Connected
7
8
VB
VO
High side gate drive floating supply
Half bridge output
9
10
11
Not Connected
VDD
High voltage supply
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5
IR3101
Typical Application Connection IR3101
M
V+
BUS
VB VBUS
VB VBUS
VB VBUS
IR3101
IR3101
IR3101
11
11
11
8
8
8
VCC
HIN
LIN
VCC
HIN
LIN
VCC
1
1
2
3
5
1
HIN
LIN
2
3
5
2
3
6
9
9
9
Vo
Vo
Vo
IC Driver
IC Driver
IC Driver
VSS
VSS
VSS
6
6
6
COM
COM
COM
V-BUS
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to re-
duce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the
module pins will further improve performance.
2. In order to provide good decoupling between Vcc-VSS and VB-VO terminals, a capacitor connected
between these terminals is recommended and should be located very close to the module pins. Addi-
tional high frequency capacitors, typically 0.1mF, are strongly recommended.
3. Low inductance shunt resistor should be used for phase leg current sensing. Similarly, the length of
the traces from the pin to the corresponding shunt resistor should be kept as small as possible.
4. Value of the bootstrap capacitors depends upon the switching frequency. Their selection should be
made based on IR design tip DN 98-2a or Figure 8.
5. Application conditions should guarantee minimum dead-time of 200ns
6
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IR3101
3.00
2.50
2.00
1.50
1.00
0.50
0.00
Low Side MOSFET
High Side MOSFET
HS
LS
IO
0
2
4
6
8
10
12
14
16
18
20
Switching Frequency [kHz]
Figure 3: Maximum phase current as function of switching frequency
Trapezoidal modulation, 120° switching, VBUS=300V, Duty Cycle=0.8, without heatsink:
Ta=55°C, TJ=150°C
3.00
2.50
2.00
1.50
1.00
0.50
0.00
Low Side MOSFET
High Side MOSFET
HS
LS
IO
0
2
4
6
8
10
12
14
16
18
20
Switching Frequency [kHz]
Figure 4: Maximum phase current as function of switching frequency
Trapezoidal modulation, 120° switching,VBUS=300V, Duty Cycle=0.8, with heatsink:
TC=100°C, TJ=125°C
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7
IR3101
9.75
8.75
7.75
6.75
5.75
4.75
3.75
2.75
1.75
0.75
450
400
350
300
250
200
150
100
50
Current
Voltage
0
-0.25
0.2
-50
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Time (ms)
Figure 5. FredFET Turn-on. Typical turn-on waveform @Tj=125°C, VBUS=300V
2.25
1.75
1.25
0.75
0.25
-0.25
450
400
350
300
250
200
150
100
50
Current
Voltage
0
-50
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Time (ms)
Figure 6. FredFET Turn-off. Typical turn-on waveform @Tj=125°C, VBUS=300V
8
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IR3101
3.00
2.50
2.00
1.50
1.00
0.50
0.00
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
TJ, Junction Temperature (°C)
Figure 7: Normalized On-Resistance vs temperature
VCC=10V, ID=1.5A
20
17.5
15
15
10
12.5
10
6.8
4.7
7.5
5
3.3
2.2
1.5
2.5
0
20
0
5
10
15
Switching Frequency (kHz)
Figure 8: Recommended minimum bootstrap capacitor value vs switching frequency
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9
IR3101
Package Outline
note 2
-B-
3.68 [.145]
3.18 [.125]
28.19 [1.198]
27.69 [1.090]
-A-
IR3101
0204
9.14 [0.36]
8.64 [0.34]
12.19 [.480]
11.69 [.460]
-C-
3.55 [.140]
3.05 [.120]
note 1
1.87 [.074]
1.30 [.051]
1.65 [.065]
1.40 [.055]
note 3
11X
0.30 [.012]
0.20 [.008]
2.54 [0.10]
10X
0.56 [.022]
0.46 [.018]
11X
C
B
A S
0.25 (.10) M
0.25 [.10]
Note 1: Marking for pin 1 identification
Note 2: Product Part Number
Note 3: Lot and Date code marking
Dimensioning and Tolerancing per ANSY Y14.5M-1992
Controlling Dimensions: INCH
Dimensions are shown in millimeters [inches]
Data and Specifications are subject to change without notice
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
01/04
10
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