IR350SG12HCB [INFINEON]
Silicon Controlled Rectifier, 1200V V(RRM), 1 Element, 4 INCH, WAFER;
| 型号： | IR350SG12HCB |
| 厂家： | 
Infineon |
| 描述： | Silicon Controlled Rectifier, 1200V V(RRM), 1 Element, 4 INCH, WAFER 栅 栅极 |
| 文件： | 总3页 (文件大小：17K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I0206J 02/97
IR350SG12HCB
PHASE CONTROL THYRISTORS
Junction Size:
Wafer Size:
Square 350 mils
4"
VRRM Class:
1200 V
Passivation Process:
Glassivated MESA
Reference IR Packaged Part: 50RIA Series
Major Ratings and Characteristics
Parameters
Units
Test Conditions
VTM
Maximum On-state Voltage
1.2 V
1200 V
100 mA
1.9 V
TJ = 25°C, IT = 25 A
VRRM Reverse Breakdown Voltage
TJ = 25°C, IRRM = 100 µA
(1)
IGT
VGT
IH
Max. Required DC Gate Current to Trigger
Max. Required DC Gate Voltage to Trigger
HoldingCurrentRange
TJ =25°C, anodesupply=6V, resistiveload
TJ =25°C, anodesupply=6V, resistiveload
10 to 200 mA Anode supply = 6 V, resistive load
IL
Maximum Latching Current
400 mA
Anode supply = 6 V, resistive load
(1)Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
350 x 350 mils (see drawing)
100 mm, with std. < 100 > flat
370 µm ± 10 µm
Nominal Front Metal Composition, Thickness
ChipDimensions
Wafer Diameter
Wafer Thickness
Maximum Width of Sawing Line
Reject Ink Dot Size
130µm
0.25mmdiameterminimum
Seedrawing
InkDotLocation
RecommendedStorageEnvironment
Storageinoriginalcontainer, indessicated
nitrogen,withnocontamination
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1
IR350SG12HCB
Bulletin I0206J 02/97
Ordering Information Table
Device Code
IR 350
S
G
12
H
CB
1
2
3
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
International Rectifier Device
Chip Dimension in Mils
Type of Device: S = Solderable SCR
Passivation Process: G = Glassivated MESA
Voltage code: Code x 100 = VRRM
Metallization: H = Silver (Anode) - Silver (Cathode)
CB = Probed Uncut Die (wafer in box)
None = Probed Die in chip carrier
Outline Table
All dimensions are in microns (mils)
2
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IR350SG12HCB
Bulletin I0206J 02/97
Wafer Layout
TOP VIEW
N° 70 Basic Cells
All dimensions are in millimeters
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3
相关型号：
IR350SG12HPBF
Silicon Controlled Rectifier, 1200V V(RRM), 1 Element, 0.350 X 0.350 INCH, DIE-3
VISHAY
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