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IR51H(D)224PBF [INFINEON]

Half Bridge Based MOSFET Driver, BICMOS, PSIP7, SIP-9/7;
IR51H(D)224PBF
型号： IR51H(D)224PBF
厂家： Infineon    Infineon
描述：

Half Bridge Based MOSFET Driver, BICMOS, PSIP7, SIP-9/7

驱动 信息通信管理 接口集成电路 驱动器
文件： 总8页 (文件大小：66K)
中文：  中文翻译
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Preliminary Data Sheet No. PD-60083H  
IR51H(D)XXX (NOTE: For new designs, we  
recommend IR’s new products IR53H(D)XXX)  
SELF-OSCILLATING HALF BRIDGE  
ProductSummary  
Features  
• Output Power MOSFETs in half-bridge configuration  
V
(max) 250V - H(D)214/224  
IN  
• High side gate drive designed for bootstrap operation  
• Bootstrap diode integrated into package (is HD type)  
• Accurate timing control for both Power MOSFETs  
Matched delay to get 50% duty cycle  
Matched deadtime of 1.2us  
• Internal oscillator with programmable frequency  
300V - H(D)737  
400V - H(D)310/320  
500V - H(D)420  
Duty Cycle  
Deadtime  
50%  
1.2µs  
R
ds(on)  
0.75Ω - H(D)737  
1.1Ω - H(D)224  
1.8Ω - H(D)320  
2.0Ω - H(D)214  
3.0Ω - H(D)420  
3.6Ω - H(D)310  
1
f =  
1. 4 × (RT + 75Ω) × CT  
• Zener clamped Vcc for offline operation  
• Half-bridge output is out of phase with RT  
o
P (T = 25  
)
2.0W  
C
Description  
D
A
The IR51H(D)XXX are complete high voltage, high speed, self-  
oscillating half-bridges. Proprietary HVIC and latch immune  
CMOS technologies, along with the HEXFET power MOSFET  
Package  
®
technology, enable ruggedized single package construction. The  
front-end features a programmable oscillator which functions simi-  
lar to the CMOS 555 timer. The supply to the control circuit has a  
zener clamp to simplify offline operation. The output features two  
HEXFETs in a half-bridge configuration with an internally set  
deadtime designed for minimum cross-conduction in the half-  
bridge. Propagation delays for the high and low side power  
MOSFETs are matched to simplify use in 50% duty cycle appli-  
cations. The device can operate up to the V (max) rating.  
IN  
TypicalConnection  
HV DC Bus  
VIN  
D 1  
IR51HXXX / IR51HDXXX  
Note: D1 is not required for HD type  
1
2
3
4
6
9
7
Vcc  
R T  
VB  
VIN  
R T  
C T  
C T  
V O  
TO,  
C O M  
LOAD  
COM  
IR51H(D)XXX  
AbsoluteMaximumRatings  
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All  
voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any  
lead. The thermal resistance and power dissipation ratings are measured under board mounted and  
still air conditions.  
Symbol  
Definition  
Minimum Maximum  
Units  
VIN  
High voltage supply  
-214  
-224  
-310  
-320  
-420  
- 0.3  
- 0.3  
- 0.3  
- 0.3  
- 0.3  
250  
250  
400  
400  
500  
-737  
-214  
-224  
-310  
-320  
-420  
- 0.3  
- 0.3  
- 0.3  
- 0.3  
- 0.3  
- 0.3  
300  
275  
275  
425  
425  
525  
VB  
High side floating supply absolute voltage  
V
-737  
- 0.3  
-0.3  
- 0.3  
- 0.3  
—
325  
VIN + 0.3  
Vcc + 0.3  
Vcc + 0.3  
25  
VO  
Half-bridge output  
RT voltage  
CT voltage  
VRT  
VCT  
Icc  
Supply current (note 1)  
RT output current  
Peak diode recovery  
mA  
IRT  
- 5  
5
dV/dt  
PD  
—
3.5  
V/ns  
W
Package power dissipation @ T ≤ +25°C  
—
2.00  
A
RthJA  
TJ  
Thermal resistance, junction to ambient  
Junction temperature  
—
60  
oC/W  
-55  
-55  
—
150  
oC  
TS  
Storage temperature  
150  
TL  
Lead temperature (soldering, 10 seconds)  
300  
NOTE 1:  
Because of the IR51H(D)XXX’s application specificity toward off-line supply systems, this IC contains a zener clamp  
between VCC and COM which has a nominal breakdown voltage of 15.6V. Therefore, the IC supply voltage is normally  
derived by current feeding the Vcc lead (typically by means of a high value resistor connected between the chip Vcc  
and the rectified line voltage and a local decoupling capacitor from Vcc to COM) and allowing the internal zener clamp  
circuit to determine the nominal supply voltage. Therefore, this circuit should not be driven by a DC, low impedance  
source of greater than VCLAMP.  
2
IR51H(D)XXX  
RecommendedOperatingConditions  
The input/output logic timing diagram is shown in figure 1. For proper operation, the device should be used  
within the recommended conditions.  
Symbol  
Definition  
Minimum  
Maximum  
Units  
VB  
VIN  
High side floating supply absolute voltage  
High voltage supply  
V
+ 10  
—
V + V  
o
o
clamp  
250  
-214  
-224  
-310  
-320  
-420  
—
—
—
—
—
250  
400  
400  
500  
V
-737  
-214  
-224  
-310  
-320  
-420  
-737  
-214  
-224  
-310  
-320  
300  
275  
275  
425  
425  
525  
325  
0.85  
1.1  
VO  
Half-bridge output voltage  
-5  
-5  
-5  
-5  
-5  
-5  
—
ID  
Continuous drain current (T = 25°C)  
A
—
—
—
0.7  
0.9  
-420  
-737  
-214  
-224  
-310  
-320  
-420  
-737  
—
—
0.7  
1.3  
0.55  
0.7  
0.45  
0.6  
0.5  
0.8  
5
A
(T = 85°C)  
A
—
—
—
—
—
—
—
ICC  
TA  
Supply current (note 1)  
Ambient temperature  
mA  
°C  
-40  
125  
3
IR51H(D)XXX  
DynamicElectricalCharacteristics  
VBIAS (VCC, VBS) = 12V, T = 25oC unless otherwise specified.  
A
Symbol Definition  
Min. Typ. Max. Units TestConditions  
t
Reverse recovery time (MOSFET body diode)  
I =850mA  
F
rr  
-214  
-224  
-310  
-320  
-420  
-737  
—
—
190  
200  
240  
270  
240  
320  
—
—
—
—
—
—
—
—
—
—
—
I =1.1A  
F
di/dt  
=100  
A/µs  
I
—
—
—
—
F=700mA  
ns  
I
F=900mA  
I
F=700mA  
I
F=1.3A  
Q
Reverse recovery charge (MOSFET body diode)  
I =850mA  
F
rr  
-214  
-224  
-310  
-320  
-420  
-737  
—
—
0.55  
0.7  
I =1.1A  
F
di/dt  
=100  
A/µs  
—
—
—
—
—
0.45  
0.6  
I =700mA  
F
µC  
I =900mA  
F
0.5  
I =700mA  
F
0.8  
1.2  
—
—
I =1.3A  
F
DT  
D
Deadtime, LS turn-off to HS turn-on &  
HS turn-off to LS turn-on  
µs  
RT duty cycle  
—
50  
—
%
fosc = 20 kHz  
4
IR51H(D)XXX  
StaticElectricalCharacteristics  
VBIAS (VCC, VB) = 12V, T = 25oC unless otherwise specified.  
A
Symbol Definition  
Min. Typ. Max. Units TestConditions  
VCCUV+ VCC supply undervoltage positive going  
threshold  
—
8.4  
—
V
V
VCC supply undervoltage negative going  
threshold  
—
8.0  
—
V
CCUV-  
I
Quiescent VCC supply current  
—
300  
—
—
—
50  
—
µA VCC > VCCUV  
QCC  
V
VCC zener shunt clamp voltage  
Quiescent VBS supply current  
—
—
15.6  
30  
V
ICC = 5mA  
CLAMP  
QBS  
I
µA  
l
Offset supply leakage current  
Oscillator frequency  
—
—
—
VB = VIN = 500V  
RT = 35.7 kΩ  
CT = 1 nF  
OS  
f
20  
OSC  
kHz  
—
100  
—
RT = 7.04 kΩ  
CT = 1 nF  
I
CT input current  
—
—
0.001  
100  
1.0  
—
µA  
CT  
V
CT undervoltage lockout  
RT high level output voltage, VCC - RT  
Note 2  
CTUV  
VRT+  
—
—
20  
200  
—
—
IRT = 100µA  
IRT = -1mA  
mV  
VRT-  
RT low level output voltage  
—
—
20  
200  
—
—
IRT = 100µA  
IRT = -1mA  
VRTUV  
VCT+  
RT undervoltage lockout, VCC - RT  
2/3 VCC threshold  
—
—
100  
8.0  
—
—
IRT = 100µA  
kHz  
VCT-  
1/3 VCC threshold  
—
4.0  
2.0  
—
—
Rds(on) Static-drain-to-source on-resistance  
I =850mA  
F
-214  
—
—
I =1.1A  
F
-224  
-310  
-320  
-420  
-737  
1.1  
3.6  
1.8  
—
—
—
—
—
—
—
—
—
—
—
I
I
I
I
F=700mA  
F=900mA  
F=700mA  
F=1.3A  
—
—
—
—
Ω
di/dt  
=100  
A/µs  
3.0  
0.75  
V
Diode forward voltage  
I =850mA  
F
SD  
-214  
-224  
-310  
-320  
-420  
-737  
—
—
0.8  
0.85  
0.8  
0.7  
0.8  
0.8  
I =1.1A  
F
I =700mA  
F
—
—
—
—
I =900mA  
F
V
I =700mA  
F
I =1.3A  
F
5
IR51H(D)XXX  
FunctionalBlockDiagram  
V
VIN  
B
6
D1  
9
1
Vcc  
IRFCXXX  
H
V
O
S
IR2151  
2
7
R
V O  
T
L
O
IRFCXXX  
3
C
T
4
C O M  
Fast recovery diode D1 is  
incorporated in IR51HDXXX only  
LeadDefinitions  
Symbol  
LeadDescription  
VCC  
Logic and internal gate drive supply voltage. An internal zener clamp diode at 15.6 V norminal is included  
to allow the VCC to be current fed directly from VIN typically by means of a high value resistor.  
RT  
CT  
Oscillator timing resistor output; a resistor is connected from RT to CT. RT is out of phase with the half-  
bridge output (VO).  
Oscillator timing capacitor input; a capacitor is connected from CT to COM in order to program the  
oscillator frequency according to the following equation:  
1
f =  
1. 4 × (RT + 75Ω) × CT  
CT PIN also invokes shutdown function (see note 2) where 75Ω is the effective impedence of the RT  
output stage.  
VB  
High side gate drive floating supply. For bootstrap operation a high voltage fast recovery diode is needed  
to feed from VCC to VB. (HD type circuits incorporate this diode).  
High voltage supply  
VIN  
VO  
Half Bridge output  
COM  
Logic and low side of half bridge return  
6
IR51H(D)XXX  
Lead Assignments  
1
2
3
4
V
R
C
6
7
9
V
B
cc  
T
T
VO  
V
IN  
9
COM  
2
1
9 Lead SIP without Leads 5 and 8  
Vccuv+  
V CLAMP  
50%  
50%  
HIN  
Vcc  
t
t
t
f
t
on  
off  
90%  
r
90%  
RT  
HO  
CT  
10%  
10%  
V+  
0
VO  
VO  
Figure 2. Switching Time Wave-  
form Definitions  
Figure 1. Input/Output Timing  
Diagram  
7
IR51H(D)XXX  
NOTES:  
1. Dimensioning and tolerancing per ANSI Y14.5M-1982  
2. Controlling Dimension: INCH  
3. Dimensions are shown in millimeters (inches)  
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 322 3331  
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020  
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2 Tel: (905) 453-2200  
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590  
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111  
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: 81 3 3983 0086  
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: 65 838 4630  
IR TAIWAN: 16 Fl. Suite D..207, Sec.2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936  
http://www.irf.com/  
Data and specifications subject to change without notice. 12/98  
8

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