IRAMX16UP60B [INFINEON]
Integrated Power Hybrid IC for Appliance Motor Drive Applications. 16A, 600V with Internal Shunt Resistor; 集成功率混合IC，适用于家电电机驱动应用。 16A ， 600V ，内置分流电阻
| 型号： | IRAMX16UP60B |
| 厂家： | 
Infineon |
| 描述： | Integrated Power Hybrid IC for Appliance Motor Drive Applications. 16A, 600V with Internal Shunt Resistor |
| 文件： | 总17页 (文件大小：247K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-96-957 RevD
IRAMX16UP60B
Series
Integrated Power Hybrid IC for
Appliance Motor Drive Applications.
Description
16A, 600V
with Internal Shunt Resistor
International Rectifier's IRAMX16UP60B is a 16A, 600V Integrated Power Hybrid IC with Internal Shunt
Resistor for Appliance Motor Drives applications such as air conditioning systems and compressor drivers as
well as for light industrial application. IR's technology offers an extremely compact, high performance AC
motor-driver in a single isolated package to simplify design.
This advanced HIC is a combination of IR's low VCE(on) Punch-Through IGBT technology and the industry
benchmark 3 phase high voltage, high speed driver in a fully isolated thermally enhanced package.
A built-in temperature monitor and over-current protection, along with the short-circuit rated IGBTs and
integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. Using a
Single in line package (SiP2) with full transfer mold structure minimizes PCB space and resolve isolation
problems to heatsink.
Features
• Internal Shunt Resistor
• Integrated Gate Drivers and Bootstrap Diodes
• Temperature Monitor
• Low VCE(on) Non Punch Through IGBT Technology
• Undervoltage lockout for all channels
• Matched propagation delay for all channels
• Schmitt-triggered input logic
• Cross-conduction prevention logic
• Lower di/dt gate driver for better noise immunity
•
Motor Power range 0.75~2.2kW / 85~253 Vac
• Isolation 2000VRMS min
• UL certification pending (UL number: E78996)
Absolute Maximum Ratings
Parameter
Description
Value
Units
VCES / VRRM
V+
IGBT/Diode Blocking Voltage
Positive Bus Input Voltage
600
V
450
IO @ TC=25°C
RMS Phase Current (Note 1)
RMS Phase Current (Note 1)
Pulsed RMS Phase Current (Note 2)
PWM Carrier Frequency
16
IO @ TC=100°C
A
8
30
IO
FPWM
20
kHz
W
PD
Power dissipation per IGBT @ TC =25°C
Isolation Voltage (1min)
31
VISO
VRMS
2000
TJ (IGBT & Diodes)
Operating Junction temperature Range
Operating Junction temperature Range
Mounting torque Range (M3 screw)
-40 to +150
-40 to +150
0.5 to 1.0
°C
TJ (Driver IC)
T
Nm
Note 1: Sinusoidal Modulation at V+=400V, TJ=150°C, FPWM=16kHz, Modulation Depth=0.8, PF=0.6, See Figure 3.
Note 2: tP<100ms; TC=25°C; FPWM=16kHz. Limited by IBUS-ITRIP, see Table "Inverter Section Electrical Characteristics"
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1
IRAMX16UP60B
Internal Electrical Schematic - IRAMX16UP60B
V+(10)
V- (12)
VB1 (7)
U, VS1 (8)
VB2 (4)
V, VS2 (5)
VB3 (1)
W, VS3 (2)
22 21 20 19 18 17
VB2 HO2 VS2 VB3 HO3 VS3
23 VS1
LO1 16
LO2 15
LO3 14
24 HO1
25 VB1
1 VCC
Driver IC
2 HIN1
HIN1 (15)
HIN2 (16)
3 HIN2
4 HIN3
HIN3 (17)
LIN2 LIN3
F
8
ITRIP EN RCIN VSS COM
10 11 12 13
5 LIN1
6
7
9
LIN1 (18)
LIN2 (19)
LIN3 (20)
FLT-EN(21)
ITRIP (22)
VTH (13)
VCC (14)
THERMISTOR
VSS (23)
2
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IRAMX16UP60B
Absolute Maximum Ratings (Continued)
All voltages are absolute referenced to COM/ITRIP
.
Conditions
Symbol
Parameter
Min
Max
Units
tP= 10ms,
Bootstrap Diode Peak Forward
Current
IBDF
---
4.5
A
TJ = 150°C, TC=100°C
tP=100µs, TC =100°C
ESR / ERJ series
Bootstrap Resistor Peak Power
(Single Pulse)
PBR Peak
VS1,2,3
VB1,2,3
VCC
---
B1,2,3 - 25
-0.3
25.0
VB1,2,3 +0.3
600
W
V
High side floating supply offset
voltage
V
High side floating supply voltage
V
Low Side and logic fixed supply
voltage
-0.3
20
V
Lower of
(VSS+15V) or
VCC+0.3V
V
IN, VEN, VITRIP
Input voltage LIN, HIN, EN, ITrip
-0.3
V
Inverter Section Electrical Characteristics @TJ= 25°C
Conditions
Symbol
Parameter
Min
Typ
Max
Units
Collector-to-Emitter Breakdown
Voltage
VIN=5V, IC=250µA
V(BR)CES
600
---
---
V
VIN=5V, IC=1.0mA
(25°C - 150°C)
Temperature Coeff. Of
Breakdown Voltage
∆V(BR)CES / ∆T
---
0.3
---
V/°C
V
IC=8A, VCC=15V
---
---
---
---
---
---
--
1.55
1.80
5
1.85
2.10
80
Collector-to-Emitter Saturation
Voltage
VCE(ON)
IC=8A, VCC=15V, TJ=150°C
VIN=5V, V+=600V
VIN=5V, V+=600V, TJ=150°C
IC=8A
Zero Gate Voltage Collector
Current
ICES
µA
V
165
2.0
1.4
--
---
2.4
1.9
1.25
1.10
---
VFM
Diode Forward Voltage Drop
IC=8A, TJ=150°C
IF=1A
Bootstrap Diode Forward Voltage
Drop
VBDFM
V
IF=1A, TJ=125°C
TJ=25°C
---
---
---
---
RBR
Bootstrap Resistor Value
22
Ω
TJ=25°C
∆RBR/RBR
Bootstrap Resistor Tolerance
---
±5
%
TJ=-40°C to 125°C
See Fig. 2
Current Protection Threshold
(positive going)
IBUS_TRIP
21
---
28
A
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3
IRAMX16UP60B
Inverter Section Switching Characteristics @ TJ= 25°C
Conditions
Symbol
Parameter
Min
---
---
---
---
---
---
---
---
---
---
---
Typ
315
150
465
30
Max
435
180
615
60
Units
IC=8A, V+=400V
VCC=15V, L=2mH
Energy losses include "tail" and
diode reverse recovery
EON
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
EOFF
ETOT
EREC
tRR
µJ
Diode Reverse Recovery energy
Diode Reverse Recovery time
Turn-on Switching Loss
Turn-off Switching Loss
Total Switching Loss
See CT1
70
90
ns
IC=8A, V+=400V
EON
500
270
770
60
700
335
1035
100
150
84
EOFF
ETOT
EREC
tRR
VCC=15V, L=2mH, TJ=150°C
Energy losses include "tail" and
diode reverse recovery
µJ
Diode Reverse Recovery energy
Diode Reverse Recovery time
Turn-On IGBT Gate Charge
See CT1
120
56
ns
QG
IC=15A, V+=400V, VGE=15V
nC
TJ=150°C, IC=8A, VP=600V
V+= 450V
FULL SQUARE
RBSOA
SCSOA
ICSC
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Short Circuit Collector Current
VCC=+15V to 0V
See CT3
TJ=150°C, VP=600V,
V+= 360V,
10
---
---
---
---
µs
A
VCC=+15V to 0V
See CT2
TJ=150°C, VP=600V, tSC<10µs
V+= 360V, VGE=15V
140
VCC=+15V to 0V
See CT2
Recommended Operating Conditions Driver Function
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommende conditions. All voltages are absolute referenced to COM/ITRIP. The VS offset is tested with all supplies biased
at 15V differential (Note 3)
Symbol
VB1,2,3
VS1,2,3
VCC
Definition
Min
VS+12
Note 4
12
Max
VS+20
450
Units
High side floating supply voltage
High side floating supply offset voltage
Low side and logic fixed supply voltage
ITRIP input voltage
V
20
V
VITRIP
VIN
VSS
VSS+5
VSS+4
VSS+5
VSS
Logic input voltage LIN, HIN
Logic input voltage EN
V
V
VEN
VSS
Note 3: For more details, see IR21363 data sheet
Note 4: Logic operational for Vs from COM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS.
(please refer to DT97-3 for more details)
4
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IRAMX16UP60B
Static Electrical Characteristics Driver Function
V
BIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM/ITRIP and are
applicable to all six channels. (Note 3)
Symbol
VINH , VENH
VINL , VENL
VCCUV+, VBSUV+
VCCUV-, VBSUV-
VCCUVH, VBSUVH
VIN,Clamp
IQBS
Definition
Min
3.0
---
Typ
---
Max
---
Units
V
Logic "0" input voltage
Logic "1" input voltage
---
0.8
11.6
11.4
---
V
VCC and VBS supply undervoltage Positive going threshold
VCC and VBS supply undervoltage Negative going threshold
VCC and VBS supply undervoltage lock-out hysteresis
Input Clamp Voltage (HIN, LIN, ITRIP) IIN=10µA
Quiescent VBS supply current VIN=0V
Quiescent VCC supply current VIN=0V
Offset Supply Leakage Current
10.6
10.4
---
11.1
10.9
0.2
5.2
---
V
V
V
4.9
---
5.5
165
3.35
60
V
µA
mA
µA
µA
µA
µA
µA
mV
IQCC
---
---
ILK
---
---
IIN+, IEN+
IIN-, IEN-
ITRIP+
Input bias current VIN=5V
---
200
100
30
300
220
100
1
Input bias current VIN=0V
---
ITRIP bias current VITRIP=5V
---
ITRIP-
ITRIP bias current VITRIP=0V
---
0
V(ITRIP
V(ITRIP, HYS)
RON FLT
)
ITRIP threshold Voltage
440
490
540
ITRIP Input Hysteresis
---
---
70
50
---
mV
,
Fault Output ON Resistance
100
ohm
Dynamic Electrical Characteristics
Driver only timing unless otherwise specified.
Symbol
Parameter
Min
Typ
Max
Units Conditions
Input to Output propagation turn-
on delay time (see fig.11)
TON
---
590
---
ns
VCC=VBS= 15V, IC=8A,
V+=400V
Input to Output propagation turn-
off delay time (see fig. 11)
TOFF
---
660
---
---
ns
TFLIN
TBLT-Trip
DT
VIN=0 & VIN=5V
VIN=0 & VIN=5V
VBS=VCC=15V
Input Filter time (HIN, LIN)
ITRIP Blancking Time
100
100
220
200
150
290
ns
ns
ns
Dead Time (VBS=VDD=15V)
360
75
VCC= VBS= 15V, external dead
time> 400ns
Matching Propagation Delay Time
(On & Off)
MT
---
---
40
---
ns
µs
VCC=VBS= 15V, IC=8A,
V+=400V
ITrip to six switch to turn-off
propagation delay (see fig. 2)
TITrip
1.75
TC = 25°C
---
---
7.7
6.7
---
---
Post ITrip to six switch to turn-off
clear time (see fig. 2)
TFLT-CLR
ms
TC = 100°C
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5
IRAMX16UP60B
Thermal and Mechanical Characteristics
Symbol
Rth(J-C)
Rth(J-C)
Rth(C-S)
CD
Parameter
Min
Typ
3.5
5.0
0.1
---
Max
4.0
5.5
---
Units Conditions
Flat, greased surface. Heatsink
°C/W compound thermal conductivity
1W/mK
Thermal resistance, per IGBT
Thermal resistance, per Diode
Thermal resistance, C-S
Creepage Distance
---
---
---
---
mm
3.2
See outline Drawings
Internal Current Sensing Resistor - Shunt Characteristics
Symbol
Parameter
Min
17.9
0
Typ
Max
Units Conditions
RShunt
18.1
18.3
TC = 25°C
Resistance
mΩ
TCoeff
Temperature Coefficient
Power Dissipation
Temperature Range
---
---
---
200 ppm/°C
PShunt
3.0
-40°C< TC <100°C
---
W
TRange
125
-40
°C
Internal NTC - Thermistor Characteristics
Parameter
Definition
Min
Typ
Max
103
Units Conditions
R25
R125
B
TC = 25°C
Resistance
97
100
kΩ
kΩ
TC = 125°C
Resistance
2.25
4165
-40
2.52
4250
2.80
4335
125
B-constant (25-50°C)
k
R2 = R1e [B(1/T2 - 1/T1)]
Temperature Range
°C
TC = 25°C
Typ. Dissipation constant
1
mW/°C
Input-Output Logic Level Table
V+
ITRIP
FLT- EN
HIN1,2,3 LIN1,2,3 U,V,W
V+
Ho
Hin1,2,3
1
1
1
1
0
0
0
0
1
X
0
1
1
X
X
1
0
1
X
X
(15,16,17)
U,V,W
(8,5,2)
0
IC
Driver
Off
Off
Off
Lin1,2,3
Lo
(18,19,20)
6
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IRAMX16UP60B
HIN1,2,3
LIN1,2,3
1
2
3
4
5
6
IBUS_trip
IBUS
6µs
1µs
50%
U,V,W
tfltclr
Sequence of events:
1-2) Current begins to rise
2) Current reaches IBUS_Trip level
2-3) Current is higher than IBUS_Trip for at least 6µs. This value is the worst-case condition with very low
over-current. In case of high current (short circuit), the actual delay will be smaller.
3-4) Delay between driver identification of over-current condition and disabling of all outputs
4) Current starts decreasing, eventually reaching 0
5) Current goes below IBUS_trip, the driver starts its auto-reset sequence
6) Driver is automatically reset and normal operation can resume (over-current condition must be removed
by the time the drivers automatically resets itself)
Figure 2. ITrip Timing Waveform
Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output
voltage would be determined by the direction of current flow in the load.
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7
IRAMX16UP60B
Module Pin-Out Description
Pin
1
Name
VB3
Description
High Side Floating Supply Voltage 3
Output 3 - High Side Floating Supply Offset Voltage
none
W,VS3
NA
2
3
VB2
4
High Side Floating Supply voltage 2
Output 2 - High Side Floating Supply Offset Voltage
none
V,VS2
NA
5
6
VB1
7
High Side Floating Supply voltage 1
Output 1 - High Side Floating Supply Offset Voltage
none
U, VS1
8
9
NA
V+
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Positive Bus Input Voltage
NA
none
V-
Negative Bus Input Voltage
Temperature Feedback
VTH
VCC
+15V Main Supply
HIN1
HIN2
HIN3
LIN1
LIN2
LIN3
Logic Input High Side Gate Driver - Phase 1
Logic Input High Side Gate Driver - Phase 2
Logic Input High Side Gate Driver - Phase 3
Logic Input Low Side Gate Driver - Phase 1
Logic Input Low Side Gate Driver - Phase 2
Logic Input Low Side Gate Driver - Phase 3
Fault Indicator
FAULT
ITRIP
Current Sense and Itrip Pin
Negative Main Supply
VSS
1
23
8
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IRAMX16UP60B
Typical Application Connection IRAMX16UP60B
VB3
BOOT-STRAP
2.2µF
CAPACITORS
VS3
VS2
VS1
W
VB2
3-Phase AC
MOTOR
V
VB1
U
V+
DC BUS
CAPACITORS
V-
VTH
+5V
Vcc (15 V)
+15V
HIN1
HIN2
+5V
0.1mF
10mF
12kohm
HIN3
LIN1
Temp
Monitor
LIN2
LIN3
CONTROLLER
Fault/Enable
ITRIP
VSS
+5V
Enable
1K
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and
EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve perfor-
mance.
2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown connected be-
tween these terminals should be located very close to the module pins. Additional high frequency capacitors, typically
0.1µF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on
IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be selected to limit the
power dissipation of the internal resistor in series with the VCC. (see maximum ratings Table on page 3).
4. Current sense signal can be obtained from pin 20 and pin 23. Care should be taken to avoid having inverter current
flowing through pin 22 to mantain required current measurement accuracy
5. After approx. 8ms the FAULT is reset. (see Dynamic Characteristics Table on page 5).
6. PWM generator must be disabled within Fault duration to garantee shutdown of the system, overcurrent condition
must be cleared before resuming operation.
7. Fault/Enable pin must be pulled-up to +5V.
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9
IRAMX16UP60B
14
12
10
8
6
TC = 100°C
TC = 110°C
TC = 120°C
4
TJ = 150°C
2
Sinusoidal Modulation
0
0
2
4
6
8
10
12
14
16
18
20
PWM Frequency - kHz
Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency
V+=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6
10
8
TJ = 150°C
Sinusoidal Modulation
6
FPWM = 20kHz
4
F
F
PWM = 16kHz
PWM = 12kHz
2
0
1
10
100
Modulation Frequency - Hz
Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency
V+=400V, TJ=150°C, TC=100°C, Modulation Depth=0.8, PF=0.6
10
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IRAMX16UP60B
150
125
100
75
TJ = 150°C
Sinusoidal Modulation
FPWM = 12 kHz
50
F
F
PWM = 16 kHz
PWM = 20 kHz
25
0
0
1
2
3
4
5
6
7
8
9
10
11
12
Output Phase Current - ARMS
Figure 5. Total Power Losses vs. PWM Switching Frequency, Sinusoidal modulation
V+=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6
150
125
100
75
50
25
0
TJ = 150°C
Sinusoidal Modulation
FPWM = 12 kHz
FPWM = 16 kHz
FPWM = 20 kHz
0
1
2
3
4
5
6
7
8
9
10
11
12
Output Phase Current - ARMS
Figure 6. Total Power Losses vs. Output Phase Current, Sinusoidal modulation
BUS=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6
V
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11
IRAMX16UP60B
160
140
120
100
80
FPWM = 12 kHz
FPWM = 16 kHz
FPWM = 20 kHz
60
40
TJ = 150°C
Sinusoidal Modulation
20
0
0
2
4
6
8
10
12
14
Output Phase Current - ARMS
Figure 7. Maximum Allowable Case temperature vs. Output RMS Current per Phase
160
T avg. = 1.2447 x T
+ 30.77
J
Therm
150
140
130
120
110
100
65
70
75
80
85
90
95
100
Internal Thermistor Temperature Equivalent Read Out - °C
Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature
12
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IRAMX16UP60B
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
+5V
REXT
TTHERM RTHERM TTHERM RTHERM TTHERM RTHERM
VTherm
°C
-40
-35
-30
-25
-20
-15
-10
-5
Ω
°C
25
30
35
40
45
50
55
60
65
70
75
80
85
Ω
°C
Ω
RTherm
4397119
3088599
2197225
1581881
1151037
846579
628988
471632
357012
272500
209710
162651
127080
100000
79222
63167
50677
40904
33195
27091
22224
18322
15184
12635
10566
8873
90
7481
6337
5384
4594
3934
3380
2916
2522
2190
1907
1665
1459
1282
95
100
105
110
115
120
125
130
135
140
145
150
Min
Avg.
Max
0
5
10
15
20
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90 100 110 120 130
Thermistor Temperature - °C
Figure 9. Thermistor Readout vs. Temperature (12kohm pull-up resistor, 5V) and
Nominal Thermistor Resistance values vs. Temperature Table.
16.0
15µF
15.0
V+
14.0
DBS
CBS
RBS
13.0
12.0
11.0
10.0
9.0
vB
RG1
+15V
HIN
VCC
HO
HIN
LIN
U,V,W
GND
VS
LO
RG2
LIN
10µF
VSS
COM
VSS
8.0
6.8µF
7.0
6.0
4.7µF
5.0
4.0
3.3µF
15
3.0
2.0
0
5
10
20
PWM Frequency - kHz
Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency
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13
IRAMX16UP60B
Figure 11. Switching Parameter Definitions
V
IC
CE
IC
V
CE
90% I
C
50%
IN/LIN
90% IC
H
H /L
IN IN
50%
50%
IN/LIN
V
H
CE
H /L
IN IN
50%
V
CE
10% IC
10% IC
tr
tf
TON
TOFF
Figure 11a. Input to Output Propagation
turn-on Delay Time
Figure 11b. Input to Output Propagation
turn-off Delay Time
IF
VCE
HIN/LIN
Irr
trr
Figure 11c. Diode Reverse Recovery
14
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IRAMX16UP60B
V+
5V
Ho
Lo
IN
IO
Hin1,2,3
Lin1,2,3
IC
Driver
U,V,W
Figure CT1. Switching Loss Circuit
V+
Ho
Hin1,2,3
IN
IO
1k
10k
IC
Driver
V
CC
U,V,W
Lin1,2,3
5VZD
Lo
IN
Io
Figure CT2. S.C.SOA Circuit
V+
Ho
Hin1,2,3
IN
IO
1k
10k
V
IC
Driver
CC
U,V,W
5VZD
Lo
Lin1,2,3
IN
Io
Figure CT3. R.B.SOA Circuit
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15
IRAMX16UP60B
Package Outline IRAMX16UP60B
note 2
62
A
3
56
note 3
B
035-Z2L03
IRAMX16UP60B
1
23
note 1
2 TYP.
0.80
0.55
TYP.
Ø0.20
M
A
B
0.70
0.45
22 PITCHES = 44
TYP.
46.2
C
R0.6 TYP.
50
CONVEX ONLY
5.0
3.2
C
0.10
MIN.
Notes:
Dimensions in mm
1- Marking for pin 1 identification
2- Product Part Number
3- Lot and Date code marking
4- Convex only 0.15mm typical
5- Tollerances ±0.5mm, unless otherwise stated
FormountinginstructionseeAN-1049
16
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IRAMX16UP60B
Package Outline IRAMX16UP60B-2
note 2
62
A
3
56
B
note 3
035-Z2L03
IRAMX16UP60B
1
23
note 1
0.80
0.55
2 TYP.
M
TYP.
A
B
Ø0.20
4.7
22 PITCHES = 44
46.2
C
R0.6 TYP.
CONVEX ONLY
3.2
50
0.10
C
MIN.
Notes:
Dimensions in mm
1- Marking for pin 1 identification
2- Product Part Number
3- Lot and Date code marking
4- Convex only 0.15mm typical
5- Tollerances ±0.5mm, unless otherwise stated
FormountinginstructionseeAN-1049
Data and Specifications are subject to change without notice
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07/05
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17
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