IRF1104STRR [INFINEON]
Power Field-Effect Transistor, 100A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, D2PAK-3;
| 型号： | IRF1104STRR |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 100A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, D2PAK-3 |
| 文件： | 总11页 (文件大小：266K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95526
IRF1104S/LPbF
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Surface Mount (IRF1104S)
l Low-profile through-hole (IRF1104L)
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 40V
RDS(on) = 0.009Ω
G
l Fully Avalanche Rated
l Lead-Free
ID = 100Aꢀ
S
Description
FifthGenerationHEXFETsfromInternationalRectifierutilize
advancedprocessingtechniquestoachieveextremelylow
on-resistancepersiliconarea. Thisbenefit,combinedwith
thefastswitchingspeedandruggedizeddevicedesignthat
HEXFETPowerMOSFETsarewellknownfor,providesthe
designerwithanextremelyefficientandreliabledevicefor
useinawidevarietyofapplications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highestpowercapabilityandthelowestpossibleon-resistance
in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low
internalconnectionresistanceandcandissipateupto2.0W
inatypicalsurfacemountapplication.
2
TO-262
D
Pak
Thethrough-holeversion(IRF1104L)isavailableforlow-
profileapplications.
Absolute Maximum Ratings
Parameter
Max.
100
71
400
2.4
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10Vꢀ
Continuous Drain Current, VGS @ 10Vꢀ
Pulsed Drain Current ꢀ
Power Dissipation
A
PD @TA = 25°C
PD @TC = 25°C
W
W
Power Dissipation
170
1.1
Linear Derating Factor
W/°C
V
VGS
EAS
IAR
Gate-to-Source Voltage
±20
350
60
Single Pulse Avalanche Energyꢀ
Avalanche Current
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
17
mJ
V/ns
5.0
-55 to + 175
300 (1.6mm from case )
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient(PCB Mounted,steady-state)**
Typ.
–––
–––
Max.
0.9
62
Units
RθJC
°C/W
RθJA
www.irf.com
1
7/20/04
IRF1104S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
40 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.038 ––– V/°C Reference to 25°C, ID = 1mAꢀ
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance ––– ––– 0.009
Ω
V
S
VGS = 10V, ID = 60A
VDS = VGS, ID = 250µA
VDS = 30V, ID = 60Aꢀ
VDS = 40V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate Threshold Voltage
2.0
37
––– 4.0
––– –––
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 93
––– ––– 29
––– ––– 30
µA
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA
IGSS
VGS = -20V
Qg
Qgs
Qgd
td(on)
tr
ID = 60A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 32V
VGS = 10V, See Fig. 6 and 13 ꢀ
–––
15 –––
VDD = 20V
––– 114 –––
ID = 60A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
28 –––
19 –––
RG = 3.6Ω
RD = 0.33Ω, See Fig. 10 ꢀ
Between lead,
LS
Internal Source Inductance
–––
–––
7.5
nH
pF
and center of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 2900 –––
––– 1100 –––
––– 250 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
––– –––
––– –––
100
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
400
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.3
––– 74 110
––– 188 280
V
TJ = 25°C, IS =60A, VGS = 0V
TJ = 25°C, IF =60A
ns
Qrr
ton
nC di/dt = 100A/µs ꢀ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Uses IRF1104 data and test conditions.
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 194µH
RG = 25Ω, IAS = 60A. (See Figure 12)
Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
ISD ≤ 60A, di/dt ≤ 304A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2
www.irf.com
IRF1104S/LPbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 175 C
J
1
0.1
1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
1000
100A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
T = 175 C
J
100
10
1
°
T = 25 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
=10V
GS
0.1
4.0
5.0
6.0
7.0
8.0 9.0
10.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
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3
IRF1104S/LPbF
5000
20
15
10
5
V
= 0V,
f = 1MHz
C SHORTED
ds
I = 60A
D
GS
V
V
= 32V
= 20V
C
= C + C
DS
DS
iss
gs
gd ,
C
= C
rss
gd
C
= C + C
4000
3000
2000
1000
0
oss
ds
gd
C
iss
C
oss
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
0
25
50
75
100
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 175 C
J
10us
100us
1ms
°
T = 25 C
J
1
10ms
°
T = 25 C
C
°
T = 175 C
Single Pulse
J
V
= 0 V
GS
1
0.1
0.2
1
10
100
0.8
1.4
2.0
2.6
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
4
www.irf.com
IRF1104S/LPbF
RD
100
80
60
40
20
0
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.05
0.1
P
2
DM
t
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF1104S/LPbF
800
600
400
200
0
I
D
TOP
24A
42A
15V
BOTTOM 60A
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
A
AS
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
175
°
V
Starting T , Junction Temperature ( C)
J
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRF1104S/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRF1104S/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 530S WIT H
P AR T N U MB E R
L OT COD E 8024
IN T E R N AT ION AL
R E CT IF IE R
L OGO
AS S E MB L E D ON WW 02, 2000
IN T H E AS S E MB L Y L IN E "L "
F 530S
D AT E CODE
Y E AR 0 = 2000
W E E K 02
N ote: "P " in as s embly line
pos ition indicates "L ead-F ree"
AS S E MB L Y
L OT COD E
L INE
L
OR
P AR T N U MB E R
IN T E R N AT ION AL
R E CT IF IE R
L OGO
F 530S
D AT E COD E
P
=
D E S IGN AT E S L E AD -F R E E
P R OD U CT (OP T ION AL )
AS S E MB L Y
L OT COD E
YE AR
W E E K 02
A = AS S E MB L Y S IT E COD E
0 = 2000
8
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IRF1104S/LPbF
TO-262 Package Outline
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
TO-262 Part Marking Information
E XAMPLE : THIS IS AN IRL3103L
LOT CODE 1789
PART NUMBER
INTERNATIONAL
RECTIFIER
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
LOGO
DATE CODE
YEAR 7 = 1997
WEEK 19
Note: "P" in assembly line
pos ition indicates "Lead-Free"
AS S E MBL Y
LOT CODE
LINE C
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 7 = 1997
ASSEMBLY
LOT CODE
WE EK 19
A= ASSEMBLY SITE CODE
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9
IRF1104S/LPbF
D2Pak Tape & Reel Infomation
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/04
10
www.irf.com
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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