IRF1310STRL [INFINEON]
Power Field-Effect Transistor, 43A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;
| 型号： | IRF1310STRL |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 43A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 晶体 晶体管 开关 脉冲 局域网 |
| 文件： | 总8页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91504A
IRF1310N
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 100V
R
DS(on) = 0.036Ω
l Fully Avalanche Rated
G
ID = 42A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrialapplicationsatpowerdissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
42
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
30
A
140
160
1.1
± 20
420
22
PD @TC = 25°C
Power Dissipation
W
W/°C
V
Linear Derating Factor
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
16
mJ
V/ns
5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
Units
RθJC
RθCS
RθJA
0.95
–––
62
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
°C/W
5/14/98
IRF1310N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
100 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance ––– ––– 0.036
Ω
V
S
VGS = 10V, ID = 22A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 22A
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate Threshold Voltage
2.0
14
––– 4.0
––– –––
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 110
––– ––– 15
––– ––– 58
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 22A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 80V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
11 –––
56 –––
45 –––
40 –––
VDD = 50V
ID = 22A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 3.6Ω
RD = 2.9Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
D
4.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
nH
pF
G
7.5
S
Ciss
Coss
Crss
Input Capacitance
––– 1900 –––
––– 450 –––
––– 230 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
42
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
140
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 180 270
––– 1.2 1.8
V
TJ = 25°C, IS = 22A, VGS = 0V
ns
TJ = 25°C, IF = 22A
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 22A, di/dt ≤ 180A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 1.7mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 22A. (See Figure 12)
IRF1310N
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20us PULSE WIDTH
20us PULSE WIDTH
T = 175 oC
J
T = 25 oC
J
1
0.1
1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
1000
36A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
T = 25 oC
J
T = 175oC
J
V
= 10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T , Junction Temperature ( oC)
4.0
5.0
V
6.0
7.0
8.0
9.0
10.0
, Gate-to-Source Voltage (V)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRF1310N
20
16
12
8
3500
I
D
= 22A
V
= 0V,
f = 1MHz
C
GS
C
= C + C
SHORTED
ds
V
V
V
= 80V
= 50V
= 20V
iss
gs
gd ,
gd
DS
DS
DS
C
= C
gd
3000
2500
2000
1500
1000
500
rss
C
= C + C
oss
ds
C
iss
C
C
oss
4
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
10
100
0
20
40
60
80
100
120
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100us
1ms
1
10ms
T
= 25oC
= 175o C
C
T
J
V
= 0 V
GS
1.4
Single Pulse
0.1
0.2
1
0.4
V
0.6
0.8
1.0
1.2
1.6
1
10
100
1000
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
IRF1310N
RD
50
40
30
20
10
0
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
P
DM
0.10
0.05
0.1
t
1
t
2
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRF1310N
1000
800
600
400
200
0
I
D
TOP
9.0A
16A
22A
1 5V
BOTTOM
DRIVER
L
V
G
DS
D.U.T
R
+
V
D D
-
I
AS
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
175
Starting T , Junction Temperature (oC)
V
(BR)DSS
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
IRF1310N
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRF1310N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B
-
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A
-
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
M IN
LEAD ASSIG NM ENTS
1
2
3
4
- GATE
1
2
3
- DRAIN
- SOU RC E
- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B
A
M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
N OTES:
1
2
D IM ENSIONING
&
TOLERANCING PER ANSI Y14.5M , 1982.
3
4
OUTLINE CONFORM S TO JEDEC OUTLINE TO-220AB.
HEATSINK LEAD M EASUREM ENTS DO NOT INCLU DE BURRS.
C ONTROLLING DIM ENSION : INCH
&
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IR F1010
A
W ITH ASSEM BLY
LOT C ODE 9B1M
INTERNATIONAL
PART NU M BER
RECTIFIER
IR F1010
LOGO
9246
9B
1M
D ATE COD E
ASSEMBLY
(YYW W )
LOT
CO DE
YY
=
YEAR
W W
= W EEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
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http://www.irf.com/
Data and specifications subject to change without notice.
5/98
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