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IRF1407STRL [INFINEON]

TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB ; 晶体管| MOSFET | N沟道| 75V V（ BR ） DSS | 100A I（ D） | TO- 263AB\n
IRF1407STRL
型号： IRF1407STRL
厂家： Infineon    Infineon
描述：

TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB
晶体管| MOSFET | N沟道| 75V V（ BR ） DSS | 100A I（ D） | TO- 263AB\n

晶体 晶体管
文件： 总11页 (文件大小：161K)
中文：  中文翻译
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PD -94335  
IRF1407S  
IRF1407L  
HEXFET® Power MOSFET  
Benefits  
●
●
●
●
●
●
Advanced Process Technology  
Ultra Low On-Resistance  
Dynamic dv/dt Rating  
175°C Operating Temperature  
Fast Switching  
D
VDSS = 75V  
Repetitive Avalanche Allowed up to Tjmax  
R
DS(on) = 0.0078Ω  
Description  
G
AdvancedHEXFET® PowerMOSFETsfromInternational  
Rectifierutilizeadvancedprocessingtechniquestoachieve  
extremelylowon-resistancepersiliconarea. Thisbenefit,  
combined with the fast switching speed and ruggedized  
device design that HEXFET power MOSFETs are well  
knownfor,providesthedesignerwithanextremelyefficient  
andreliabledeviceforuseinawidevarietyofapplications.  
The D2Pak is a surface mount power package capable of  
accommodatingdiesizesuptoHEX-4. Itprovidesthehighest  
powercapabilityandthelowestpossibleon-resistanceinany  
existing surface mount package. The D2Pak is suitable for  
highcurrentapplicationsbecauseofitslowinternalconnection  
resistance and can dissipate up to 2.0W in a typical surface  
mount application.  
ID = 100A†  
S
D2Pak  
TO-262  
IRF1407S  
IRF1407L  
The through-hole version (IRF1407L) is available for low-  
profile applications.  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10Vˆ  
Continuous Drain Current, VGS @ 10Vˆ  
Pulsed Drain Current ˆ  
100†  
70†  
A
520  
PD @TA = 25°C  
PD @TC = 25°C  
Power Dissipation  
3.8  
W
W
Power Dissipation  
200  
Linear Derating Factor  
1.3  
W/°C  
V
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
± 20  
390  
Single Pulse Avalanche Energy‚ˆ  
Avalanche Current  
mJ  
A
See Fig.12a, 12b, 15, 16  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy‡  
Peak Diode Recovery dv/dt ƒˆ  
Operating Junction and  
mJ  
V/ns  
4.6  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.75  
40  
Units  
°C/W  
RθJC  
RθJA  
Junction-to-Case  
Junction-to-Ambient(PCB Mounted,steady-state)**  
–––  
**When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer  
to application note #AN-994.  
www.irf.com  
1
10/05/01  
IRF1407S/IRF1407L  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
75 ––– –––  
Conditions  
VGS = 0V, ID = 250µA  
V(BR)DSS  
Drain-to-Source Breakdown Voltage  
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.09 ––– V/°C Reference to 25°C, ID = 1mA ˆ  
RDS(on)  
VGS(th)  
gfs  
Static Drain-to-Source On-Resistance  
Gate Threshold Voltage  
––– ––– 0.0078  
Ω
V
S
VGS = 10V, ID = 78A „  
VDS = 10V, ID = 250µA  
VDS = 25V, ID = 78A ˆ  
VDS = 75V, VGS = 0V  
VDS = 60V, VGS = 0V, TJ = 150°C  
VGS = 20V  
2.0  
74  
––– 4.0  
Forward Transconductance  
––– –––  
––– ––– 20  
––– ––– 250  
––– ––– 200  
––– ––– -200  
––– 160 250  
IDSS  
Drain-to-Source Leakage Current  
µA  
nA  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Total Gate Charge  
IGSS  
VGS = -20V  
Qg  
ID = 78A  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
Rise Time  
–––  
–––  
–––  
35  
54  
52  
81  
nC VDS = 60V  
VGS = 10V„ˆ  
11 –––  
VDD = 38V  
––– 150 –––  
––– 150 –––  
––– 140 –––  
ID = 78A  
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
RG = 2.5Ω  
VGS = 10V „ˆ  
Between lead,  
6mm (0.25in.)  
from package  
and center of die contact  
VGS = 0V  
D
4.5  
LD  
LS  
Internal Drain Inductance  
Internal Source Inductance  
–––  
–––  
–––  
–––  
nH  
pF  
G
7.5  
S
Ciss  
Input Capacitance  
––– 5600 –––  
––– 890 –––  
––– 190 –––  
––– 5800 –––  
––– 560 –––  
––– 1100 –––  
Coss  
Output Capacitance  
VDS = 25V  
Crss  
Reverse Transfer Capacitance  
Output Capacitance  
ƒ = 1.0KHz, See Fig. 5 ˆ  
Coss  
VGS = 0V, VDS = 1.0V, ƒ = 1.0KHz  
VGS = 0V, VDS = 60V, ƒ = 1.0KHz  
VGS = 0V, VDS = 0V to 60V  
Coss  
Output Capacitance  
Coss eff.  
Effective Output Capacitance ꢀ  
Source-Drain Ratings and Characteristics  
Parameter  
Continuous Source Current  
(Body Diode)  
Min. Typ. Max. Units  
Conditions  
D
IS  
MOSFET symbol  
––– –––  
100†  
showing the  
A
G
ISM  
Pulsed Source Current  
(Body Diode)   
integral reverse  
––– ––– 520  
S
p-n junction diode.  
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse RecoveryCharge  
Forward Turn-On Time  
––– ––– 1.3  
––– 110 170  
––– 390 590  
V
TJ = 25°C, IS = 78A, VGS = 0V „  
TJ = 25°C, IF = 78A  
ns  
Qrr  
ton  
nC di/dt = 100A/µs „ˆ  
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  
Notes:  
ꢀCoss eff. is a fixed capacitance that gives the same charging time  
Repetitive rating; pulse width limited by  
max. junction temperature. (See fig. 11).  
‚Starting TJ = 25°C, L = 0.13mH  
RG = 25Ω, IAS = 78A. (See Figure 12).  
ƒISD ≤ 78A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS  
TJ ≤ 175°C  
as Coss while VDS is rising from 0 to 80% VDSS  
.
†
‡
ˆ
Calculated continuous current based on maximum allowable  
junction temperature. Package limitation current is 75A.  
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive  
avalanche performance.  
,
„Pulse width ≤ 400µs; duty cycle ≤ 2%.  
Uses IRF1407 data and test conditions.  
2
www.irf.com  
IRF1407S/IRF1407L  
1000  
100  
10  
1000  
VGS  
15V  
10V  
VGS  
15V  
10V  
TOP  
TOP  
8.0V  
8.0V  
7.0V  
6.0V  
5.5V  
5.0V  
7.0V  
6.0V  
5.5V  
5.0V  
100  
10  
1
BOTTOM 4.5V  
BOTTOM 4.5V  
4.5V  
4.5V  
20µs PULSE WIDTH  
Tj = 25°C  
20µs PULSE WIDTH  
Tj = 175°C  
1
0.1  
1
10  
100  
0.1  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
V
, Drain-to-Source Voltage (V)  
DS  
DS  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
3.0  
1000.00  
100.00  
10.00  
130A  
=
I
D
T
= 25°C  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
J
T
= 175°C  
J
V
= 15V  
DS  
20µs PULSE WIDTH  
V
= 10V  
GS  
-60 -40 -20  
0
20 40 60 80 100 120 140 160 180  
3.0  
5.0  
7.0  
9.0  
11.0  
13.0  
°
T , Junction Temperature  
( C)  
J
V
, Gate-to-Source Voltage (V)  
GS  
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance  
Vs. Temperature  
www.irf.com  
3
IRF1407S/IRF1407L  
15  
12  
9
100000  
D
I
=
78A  
V
= 0V,  
f = 1 MHZ  
GS  
V
V
V
=
=
=
60V  
37V  
15V  
DS  
DS  
DS  
C
= C + C  
,
C
ds  
SHORTED  
iss  
gs  
gd  
C
= C  
rss  
gd  
C
= C + C  
oss  
ds gd  
10000  
1000  
100  
Ciss  
6
Coss  
Crss  
3
0
0
40  
Q
80  
120  
160  
200  
1
10  
, Drain-to-Source Voltage (V)  
100  
, Total Gate Charge (nC)  
G
V
DS  
Fig 6. Typical Gate Charge Vs.  
Fig 5. Typical Capacitance Vs.  
Gate-to-Source Voltage  
Drain-to-Source Voltage  
1000.00  
100.00  
10.00  
1.00  
10000  
OPERATION IN THIS AREA  
LIMITED BY R  
(on)  
DS  
T
= 175°C  
1000  
100  
10  
J
100µsec  
1msec  
T
= 25°C  
J
Tc = 25°C  
Tj = 175°C  
Single Pulse  
V
= 0V  
10msec  
100  
GS  
1
0.10  
1
10  
1000  
0.0  
1.0  
2.0  
3.0  
V
, Drain-toSource Voltage (V)  
V
, Source-toDrain Voltage (V)  
DS  
SD  
Fig 8. Maximum Safe Operating Area  
Fig 7. Typical Source-Drain Diode  
Forward Voltage  
4
www.irf.com  
IRF1407S/IRF1407L  
120  
100  
80  
60  
40  
20  
0
RD  
VDS  
LIMITED BY PACKAGE  
VGS  
D.U.T.  
RG  
+VDD  
-
10V  
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
Fig 10a. Switching Time Test Circuit  
V
DS  
90%  
25  
50  
75  
100  
125  
150  
175  
°
( C)  
T
, Case Temperature  
C
10%  
V
GS  
Fig 9. Maximum Drain Current Vs.  
t
t
r
t
t
f
d(on)  
d(off)  
Case Temperature  
Fig 10b. Switching Time Waveforms  
1
D = 0.50  
0.20  
0.1  
0.10  
0.05  
P
DM  
t
1
0.02  
SINGLE PULSE  
t
2
(THERMAL RESPONSE)  
0.01  
Notes:  
1. Duty factor D =  
t
/ t  
1
2
2. Peak T  
= P  
x
Z
+ T  
J
DM  
thJC  
C
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case  
www.irf.com  
5
IRF1407S/IRF1407L  
650  
520  
390  
260  
130  
0
1 5V  
I
D
TOP  
32A  
55A  
78A  
DRIVER  
BOTTOM  
L
V
G
DS  
D.U.T  
AS  
R
+
V
D D  
-
I
A
20V  
0.01  
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit  
V
(BR)DSS  
t
p
25  
50  
75  
100  
125  
150  
175  
°
( C)  
Starting T , Junction Temperature  
J
I
AS  
Fig 12c. Maximum Avalanche Energy  
Fig 12b. Unclamped Inductive Waveforms  
Vs. Drain Current  
Q
G
10 V  
Q
Q
GD  
GS  
3.5  
V
G
3.0  
2.5  
2.0  
1.5  
I
= 250µA  
D
Charge  
Fig 13a. Basic Gate Charge Waveform  
Current Regulator  
Same Type as D.U.T.  
50KΩ  
.2µF  
12V  
.3µF  
+
V
DS  
D.U.T.  
-
V
GS  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
3mA  
T
, Temperature ( °C )  
J
I
I
D
G
Current Sampling Resistors  
Fig 14. Threshold Voltage Vs. Temperature  
Fig 13b. Gate Charge Test Circuit  
6
www.irf.com  
IRF1407S/IRF1407L  
1000  
100  
10  
Duty Cycle = Single Pulse  
0.01  
Allowed avalanche Current vs  
avalanche pulsewidth, tav  
assuming  
Tj = 25°C due to  
∆
avalanche losses  
0.05  
0.10  
1
1.0E-07  
1.0E-06  
1.0E-05  
1.0E-04  
1.0E-03  
1.0E-02  
1.0E-01  
tav (sec)  
Fig 15. Typical Avalanche Current Vs.Pulsewidth  
400  
300  
200  
100  
0
Notes on Repetitive Avalanche Curves , Figures 15, 16:  
(For further info, see AN-1005 at www.irf.com)  
1. Avalanche failures assumption:  
Purely a thermal phenomenon and failure occurs at a  
temperature far in excess of Tjmax. This is validated for  
every part type.  
2. Safe operation in Avalanche is allowed as long asTjmax is  
not exceeded.  
3. Equation below based on circuit and waveforms shown in  
Figures 12a, 12b.  
TOP  
BOTTOM 10% Duty Cycle  
= 78A  
Single Pulse  
I
D
4. PD (ave) = Average power dissipation per single  
avalanche pulse.  
5. BV = Rated breakdown voltage (1.3 factor accounts for  
voltage increase during avalanche).  
6. Iav = Allowable avalanche current.  
7. ∆T = Allowable rise in junction temperature, not to exceed  
Tjmax (assumed as 25°C in Figure 15, 16).  
tav = Average time in avalanche.  
25  
50  
75  
100  
125  
150  
175  
D = Duty cycle in avalanche = tav ·f  
Starting T , Junction Temperature (°C)  
ZthJC(D, tav) = Transient thermal resistance, see figure 11)  
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = ∆T/ ZthJC  
Iav = 2∆T/ [1.3·BV·Zth]  
Fig 16. Maximum Avalanche Energy  
EAS (AR) = PD (ave)·tav  
Vs. Temperature  
www.irf.com  
7
IRF1407S/IRF1407L  
Peak Diode Recovery dv/dt Test Circuit  
+
Circuit Layout Considerations  
• Low Stray Inductance  
• Ground Plane  
• Low Leakage Inductance  
Current Transformer  
D.U.T*  
ƒ
-
+
‚
-
„
-
+

RG  
• dv/dt controlled by RG  
• ISD controlled by Duty Factor "D"  
• D.U.T. - Device Under Test  
+
-
VDD  
VGS  
* Reverse Polarity of D.U.T for P-Channel  
Driver Gate Drive  
P.W.  
Period  
Period  
D =  
P.W.  
V
[
=10V  
] ***  
GS  
D.U.T. I Waveform  
SD  
Reverse  
Recovery  
Current  
Body Diode Forward  
Current  
di/dt  
D.U.T. V Waveform  
DS  
Diode Recovery  
dv/dt  
V
DD  
[
[
]
Re-Applied  
Voltage  
Body Diode  
Forward Drop  
Inductor Curent  
I
]
SD  
Ripple ≤ 5%  
*** VGS = 5.0V for Logic Level and 3V Drive Devices  
Fig 17. For N-channel HEXFET® power MOSFETs  
8
www.irf.com  
IRF1407S/IRF1407L  
D2Pak Package Outline  
Dimensions are shown in millimeters (inches)  
10.54 (.415)  
10.29 (.405)  
10.16 (.400)  
REF.  
- B -  
1.32 (.052)  
4.69 (.185)  
4.20 (.165)  
1.40 (.055)  
- A -  
MAX.  
1.22 (.048)  
2
6.47 (.255)  
6.18 (.243)  
1.78 (.070)  
1.27 (.050)  
15.49 (.610)  
14.73 (.580)  
2.79 (.110)  
2.29 (.090)  
1
3
2.61 (.103)  
2.32 (.091)  
5.28 (.208)  
4.78 (.188)  
8.89 (.350)  
REF.  
1.40 (.055)  
1.14 (.045)  
1.39 (.055)  
1.14 (.045)  
3X  
0.55 (.022)  
0.46 (.018)  
0.93 (.037)  
0.69 (.027)  
3X  
5.08 (.200)  
0.25 (.010)  
M
B A M  
MINIMUM RECOMMENDED FOOTPRINT  
11.43 (.450)  
8.89 (.350)  
LEAD ASSIGNMENTS  
1 - GATE  
NO TES:  
1
2
3
4
DIMENSIONS AFTER SO LDER DIP.  
17.78 (.700)  
2 - DRAIN  
3 - SOURCE  
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.  
CONTROLLING DIMENSION : INCH.  
HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.  
3.81 (.150)  
2.54 (.100)  
2.08 (.082)  
2X  
2X  
D2Pak Part Marking Information  
THIS IS AN IRF530S WITH  
LOT CODE 8024  
PART NUMBER  
INTERNATIONAL  
ASSEMBLED ON WW02, 2000  
IN THE ASSEMBLYLINE "L"  
RECTIFIER  
LOGO  
F530S  
DATE CODE  
YEAR 0 = 2000  
WE E K 02  
AS S E MB L Y  
LOT CODE  
LINE L  
www.irf.com  
9
IRF1407S/IRF1407L  
TO-262 Package Outline  
Dimensions are shown in millimeters (inches)  
TO-262 Part Marking Information  
EXAMPLE: THIS IS AN IRL3103L  
LOT CODE 1789  
PART NUMBER  
INTERNATIONAL  
RECTIFIER  
LOGO  
ASSEMBLED ON WW19, 1997  
IN THE ASSEMBLYLINE "C"  
DATE CODE  
YEAR 7 = 1997  
WE E K 19  
ASSEMBLY  
LOT CODE  
LINE C  
10  
www.irf.com  
IRF1407S/IRF1407L  
D2Pak Tape & Reel Information  
Dimensions are shown in millimeters (inches)  
TR R  
1.60 (.063)  
1.50 (.059)  
1.60 (.063)  
1.50 (.059)  
4.10 (.161)  
3.90 (.153)  
0.368 (.0145)  
0.342 (.0135)  
F EE D D IRE C TIO N  
TR L  
11.60 (.457)  
11.40 (.449)  
1.85 (.073)  
1.65 (.065)  
24.30 (.957)  
23.90 (.941)  
15.22 (.601)  
15.42 (.609)  
1.75 (.069)  
10.90 (.429)  
10.70 (.421)  
1.25 (.049)  
4.72 (.136)  
4.52 (.178)  
16.10 (.634)  
15.90 (.626)  
F E ED D IRE C T IO N  
13.50 (.532)  
12.80 (.504)  
27.40 (1.079)  
23.90 (.941)  
4
330.00  
(14.173)  
MAX.  
60.00 (2.362)  
M IN.  
30.40 (1.197)  
MAX.  
NOTES  
:
1. COMFORMS TO EIA-418.  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIM ENSION M EASURED  
4. INCLUDES FLANGE DISTORTION  
26.40 (1.039)  
24.40 (.961)  
4
@ HUB.  
3
@
OUTER EDGE.  
Data and specifications subject to change without notice.  
This product has been designed and qualified for the Industrial market.  
Qualification Standards can be found on IR’s Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.10/01  
www.irf.com  
11  

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 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
VISHAY

IRF142

 N-Channel Power MOSFETs, 27 A, 60-100V
FAIRCHILD
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