IRF200B211 [INFINEON]
Brushed Motor drive applications;
| 型号： | IRF200B211 |
| 厂家： | 
Infineon |
| 描述： | Brushed Motor drive applications |
| 文件： | 总10页 (文件大小：551K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
StrongIRFET™
IRF200B211
HEXFET® Power MOSFET
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
DC/DC and AC/DC converters
DC/AC Inverters
VDSS
RDS(on) typ.
max
200V
135m
170m
ID (Silicon Limited)
12A
S
D
Benefits
G
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free*RoHS Compliant, Halogen-Free
G
D
S
Gate
Drain
Source
Base part number
Package Type
Standard Pack
Form
Orderable Part Number
Quantity
IRF200B211
TO-220
Tube
50
IRF200B211
500
450
400
350
300
250
200
150
100
14
12
10
8
I
= 7.2A
D
T
= 125°C
J
6
4
T
= 25°C
J
2
0
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
175
T
, Case Temperature (°C)
C
V
Gate -to -Source Voltage (V)
GS,
Fig 2. Maximum Drain Current vs. Case Temperature
Fig 1. Typical On-Resistance vs. Gate Voltage
1
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IRF200B211
Absolute Maximum Rating
Symbol
Parameter
Max.
12
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
9.0
A
34
80
PD @TC = 25°C
Maximum Power Dissipation
W
W/°C
V
Linear Derating Factor
0.53
± 20
VGS
Gate-to-Source Voltage
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
-55 to + 175
300
°C
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics
EAS (Thermally limited)
88
Single Pulse Avalanche Energy
mJ
EAS (Thermally limited)
EAS (tested)
IAR
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
72
98
A
mJ
See Fig 15, 16, 23a, 23b
EAR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Typ.
–––
0.50
–––
Max.
1.88
–––
62
Units
Junction-to-Case
RJC
RCS
RJA
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
°C/W
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V
GS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
GS = 10V, ID = 7.2A
VDS = VGS, ID = 50µA
DS = 200V, VGS = 0V
VDS = 160V,VGS = 0V,TJ =125°C
V(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
200 ––– –––
––– 0.21 –––
––– 135 170
V
V/°C
V(BR)DSS/TJ
RDS(on)
VGS(th)
V
m
V
3.0 –––
––– –––
4.9
20
V
IDSS
Drain-to-Source Leakage Current
µA
––– ––– 250
––– ––– 100
––– ––– -100
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
V
V
GS = 20V
GS = -20V
IGSS
RG
nA
–––
2.7
–––
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 3.4mH, RG = 50, IAS = 7.2A, VGS =10V.
ISD 7.2A, di/dt 1184A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS
.
R is measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1.0mH, RG = 50, IAS = 11.5A, VGS =10V.
This value determined from sample failure population, starting TJ = 25°C, L= 3.4mH, RG = 50, IAS = 7.2A, VGS =10V.
2
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IRF200B211
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min.
13
Typ. Max. Units
Conditions
–––
15.3
5.1
–––
23
S
VDS = 50V, ID = 7.2A
Qg
–––
–––
–––
–––
–––
–––
ID = 7.2A
Qgs
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
–––
–––
–––
–––
–––
VDS = 100V
VGS = 10V
nC
Qgd
5.6
Qsync
td(on)
tr
10.2
6.5
VDD = 130V
ID = 7.2A
Rise Time
9.5
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
11.3
6.5
790
62
–––
–––
–––
–––
–––
RG= 2.7
V
GS = 10V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
VDS = 50V
21
ƒ = 1.0MHz, See Fig.TBD
pF
Effective Output Capacitance
(Energy Related)
Coss eff.(ER)
Coss eff.(TR)
–––
–––
66
83
–––
–––
VGS = 0V, VDS = 0V to 160V
VGS = 0V, VDS = 0V to 160V
Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
Min.
Typ. Max. Units
Conditions
MOSFET symbol
D
Continuous Source Current
(Body Diode)
IS
–––
–––
–––
12
showing the
A
G
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
ISM
–––
34
S
VSD
Diode Forward Voltage
–––
–––
–––
1.3
V
TJ = 25°C, IS = 7.2A,VGS = 0V
dv/dt
Peak Diode Recovery dv/dt
32.5
68
––– V/ns TJ =175°C,IS = 7.2A,VDS = 200V
–––
TJ = 25°C
VDD = 100V
IF = 7.2A,
trr
Reverse Recovery Time
ns
–––
–––
–––
–––
83
195
280
4.3
–––
–––
–––
–––
TJ = 125°C
TJ = 25°C di/dt = 100A/µs
Qrr
Reverse Recovery Charge
Reverse Recovery Current
nC
A
TJ = 125°C
IRRM
TJ = 25°C
3
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IRF200B211
100
10
100
10
1
VGS
15V
10V
7.0V
6.0V
5.5V
5.25V
5.0V
VGS
15V
10V
7.0V
6.0V
5.5V
5.25V
5.0V
TOP
TOP
BOTTOM
BOTTOM
1
5.0V
0.1
0.01
5.0V
60µs
60µs
PULSE WIDTH
Tj = 175°C
PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 4. Typical Output Characteristics
Fig 3. Typical Output Characteristics
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
= 7.2A
D
V
= 10V
GS
10
1
0.1
0.01
2
3
4
5
6
7
8
-60
-20
T
20
60
100
140
180
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
10000
1000
100
14
V
= 0V,
= C
f = 1 MHZ
GS
I
= 7.2A
V
C
C
C
+ C , C
SHORTED
D
iss
gs
gd
ds
12
10
8
= C
rss
oss
gd
= C + C
= 160V
= 100V
DS
ds
gd
V
DS
VDS= 40V
C
iss
6
C
oss
4
C
rss
2
10
0
1
10
100
1000
0
4
8
12
16
20
24
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
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Fig 8. Typical Gate Charge vs.Gate-to-Source Voltage
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4
IRF200B211
100
10
1
100
10
OPERATION IN THIS AREA LIMITED BY RDS (on)
100µsec
1msec
1
T
= 175°C
T
= 25°C
J
J
10msec
DC
0.1
0.01
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
1.4
250
Id = 1.0mA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
225
200
175
0
20 40 60 80 100 120 140 160 180 200
Drain-to-Source Voltage (V)
-60 -40 -20
0
20 40 60 80 100120140160180
, Temperature ( °C )
T
J
V
DS,
Fig 11. Drain-to-Source Breakdown Voltage
Fig 12. Typical Coss Stored Energy
800
700
600
500
400
300
200
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
100
0
10
20
30
40
I
, Drain Current (A)
D
Fig 13. Typical On– Resistance vs. Drain Current
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March 31, 2015
IRF200B211
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
Notes:
1. Duty Factor D = t1/t2
( THERMAL RESPONSE )
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart = 25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 15. Avalanche Current vs. Pulse Width
100
80
60
40
20
0
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
TOP
BOTTOM 1.0% Duty Cycle
= 7.2A
Single Pulse
I
D
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 14)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
J
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)· av
t
Fig 16. Maximum Avalanche Energy vs. Temperature
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IRF200B211
6.0
5.0
4.0
3.0
2.0
1.0
25
20
15
10
5
I
= 4.8A
= 100V
F
V
R
T = 25°C
J
T = 125°C
J
I
= 50µA
D
ID = 100µA
I
= 250µA
D
D
I
= 1.0mA
0
-75 -50 -25
0
25 50 75 100 125 150 175
100 200 300 400 500 600 700 800 900 1000
T
, Temperature ( °C )
di /dt (A/µs)
F
J
Fig 17. Threshold Voltage vs. Temperature
Fig 18. Typical Recovery Current vs. dif/dt
700
25
20
15
10
5
I
= 4.8A
= 100V
I
= 7.2A
= 100V
F
F
V
600
500
400
300
200
100
0
V
R
R
T = 25°C
J
T = 125°C
J
T = 25°C
J
T = 125°C
J
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
di /dt (A/µs)
F
di /dt (A/µs)
F
Fig 19. Typical Recovery Current vs. dif/dt
Fig 20. Typical Stored Charge vs. dif/dt
700
I
= 7.2A
= 100V
F
600
500
400
300
200
100
0
V
R
T = 25°C
J
T = 125°C
J
100 200 300 400 500 600 700 800 900 1000
di /dt (A/µs)
F
Fig 21. Typical Stored Charge vs. dif/dt
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March 31, 2015
IRF200B211
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
I
0.01
t
p
AS
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 25b. Gate Charge Waveform
Fig 25a. Gate Charge Test Circuit
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IRF200B211
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
E X A M P L E :
T H IS IS A N IR F 1 0 1 0
L O C O D E 1 7 8 9
A S S E M B L E D
IN T H E A S S E M B L Y L IN E "C "
P A R T N U M B E R
D A T E C O D E
T
IN T E R N A T IO N A L
R E C T IF IE R
L O G O
O
N
W
W
1 9 , 2 0 0 0
Y E A R
E E K 1 9
L IN E
0
=
2 0 0 0
N o t e : "P " in a s s e m b ly lin e p o s it io n
in d ic a t e s "L e a d F r e e "
A S S E M B L Y
W
-
L O
T C O D E
C
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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March 31, 2015
IRF200B211
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F) ††
TO-220
N/A
Yes
Moisture Sensitivity Level
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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March 31, 2015
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