IRF2907S [INFINEON]
AUTOMOTIVE MOSFET; 汽车MOSFET
| 型号： | IRF2907S |
| 厂家： | 
Infineon |
| 描述： | AUTOMOTIVE MOSFET |
| 文件： | 总12页 (文件大小：363K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95872
IRF2907Z
AUTOMOTIVE MOSFET
IRF2907ZS
IRF2907ZL
HEXFET® Power MOSFET
Features
l
l
l
l
l
Advanced Process Technology
D
VDSS = 75V
UltraLowOn-Resistance
175°COperatingTemperature
Fast Switching
RDS(on) = 4.5mΩ
G
Repetitive Avalanche Allowed up to Tjmax
ID = 75A
S
Description
SpecificallydesignedforAutomotiveapplications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistancepersiliconarea. Additionalfeatures
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitiveavalancherating. Thesefeaturescom-
bine to make this design an extremely efficient
andreliabledeviceforuseinAutomotiveapplica-
tions and a wide variety of other applications.
D2Pak
IRF2907ZS
TO-262
IRF2907ZL
TO-220AB
IRF2907Z
Absolute Maximum Ratings
Parameter
Max.
170
120
75
Units
A
I
I
I
I
@ TC = 25°C
@ TC = 100°C
@ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
D
D
D
Continuous Drain Current, VGS @ 10V (See Fig. 9)
(Package Limited)
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
680
330
DM
P
@TC = 25°C
W
Maximum Power Dissipation
Linear Derating Factor
D
2.2
± 20
W/°C
V
V
Gate-to-Source Voltage
GS
EAS
300
690
mJ
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
EAS (tested)
IAR
See Fig.12a,12b,15,16
A
EAR
mJ
°C
Repetitive Avalanche Energy
T
J
-55 to + 175
Operating Junction and
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Typ.
–––
Max.
0.45
–––
62
Units
°C/W
Parameter
RθJC
Junction-to-Case
RθCS
RθJA
RθJA
0.50
–––
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
–––
40
Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
06/17/04
IRF2907Z/S/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
75 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
∆Β
V
∆
DSS/ TJ
V
Breakdown Voltage Temp. Coefficient ––– 0.069 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
3.5
–––
–––
–––
–––
–––
–––
180
46
4.5
4.0
VGS = 10V, ID = 75A
mΩ
V
VDS = VGS, ID = 250µA
VDS = 25V, ID = 75A
gfs
IDSS
Forward Transconductance
180
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
20
S
Drain-to-Source Leakage Current
µA
nA
V
V
V
V
DS = 75V, VGS = 0V
DS = 75V, VGS = 0V, TJ = 125°C
GS = 20V
250
200
-200
270
–––
–––
–––
–––
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
GS = -20V
Qg
Qgs
Qgd
td(on)
tr
ID = 75A
DS = 60V
VGS = 10V
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC
V
65
19
ns VDD = 38V
ID = 75A
Rise Time
140
97
td(off)
tf
Turn-Off Delay Time
RG = 2.5Ω
VGS = 10V
Fall Time
100
5.0
LD
D
S
Internal Drain Inductance
nH Between lead,
6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
13
–––
and center of die contact
VGS = 0V
Ciss
Input Capacitance
––– 7500 –––
pF
Coss
Output Capacitance
–––
–––
970
510
–––
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
Output Capacitance
ƒ = 1.0MHz, See Fig. 5
Coss
––– 3640 –––
––– 650 –––
––– 1020 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
VGS = 0V, VDS = 60V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
Coss eff.
Effective Output Capacitance
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
Continuous Source Current
–––
–––
75
(Body Diode)
Pulsed Source Current
A
V
showing the
integral reverse
G
ISM
–––
–––
680
S
(Body Diode)
Diode Forward Voltage
p-n junction diode.
VSD
T = 25°C, I = 75A, V = 0V
–––
–––
1.3
J
S
GS
trr
Qrr
T = 25°C, I = 75A, VDD = 38V
J F
di/dt = 100A/µs
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
41
59
61
89
ns
nC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Forward Turn-On Time
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C,
ꢀ Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80% VDSS
.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
L=0.11mH, RG = 25Ω, IAS = 75A, VGS =10V.
Part not recommended for use above this value.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
ISD ≤ 75A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C.
,
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
2
www.irf.com
IRF2907Z/S/L
1000
100
10
10000
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60µs PULSE WIDTH
Tj = 175°C
≤
60µs PULSE WIDTH
≤
Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
200
T
= 25°C
J
T
= 175°C
J
150
100
50
T
= 175°C
J
T
= 25°C
J
1
V
= 10V
DS
380µs PULSE WIDTH
V
= 25V
DS
≤
60µs PULSE WIDTH
0.1
0
2
4
6
8
10
0
25
50
75
100
125
150
I ,Drain-to-Source Current (A)
D
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
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3
IRF2907Z/S/L
100000
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 90A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
V
V
V
= 60V
= 38V
= 15V
= C
DS
DS
DS
rss
oss
gd
= C + C
ds
gd
10000
1000
100
C
iss
6.0
C
C
oss
rss
4.0
2.0
0.0
1
10
100
0
50
100
150
200
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
10000
1000
100
10
1000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100
10
1
100µsec
T = 25°C
J
1msec
1
10msec
Tc = 25°C
Tj = 175°C
V
= 0V
GS
Single Pulse
0.1
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
2.5
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF2907Z/S/L
2.5
2.0
1.5
1.0
0.5
180
160
140
120
100
80
I
= 90A
D
V
= 10V
Limited By Package
GS
60
40
20
0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160 180
25
50
75
100
125
150
175
, Junction Temperature (°C)
T
, Case Temperature (°C)
J
C
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current vs.
vs.Temperature
CaseTemperature
1
D = 0.50
0.1
0.20
0.10
0.05
R1
R1
R2
R2
Ri (°C/W) τi (sec)
0.02
0.01
0.01
τ
J τJ
τ
0.251
0.000457
τ
Cτ
1 τ1
Ci= τi/Ri
τ
2τ2
0.199
0.003019
SINGLE PULSE
0.001
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF2907Z/S/L
1200
1000
800
600
400
200
0
15V
I
D
TOP
10A
14A
BOTTOM 75A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
20V
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
4.0
V
G
3.5
3.0
2.5
2.0
1.5
1.0
Charge
Fig 13a. Basic Gate Charge Waveform
I
= 250µA
D
L
VCC
DUT
0
-75 -50 -25
0
25 50 75 100 125 150 175 200
1K
T , Temperature ( °C )
J
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
6
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IRF2907Z/S/L
100
10
1
Duty Cycle = Single Pulse
0.01
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses
0.05
0.10
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
350
300
250
200
150
100
50
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
TOP
BOTTOM 1% Duty Cycle
= 75A
Single Pulse
I
D
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
0
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs.Temperature
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7
IRF2907Z/S/L
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
CircuitLayoutConsiderations
• LowStrayInductance
• Ground Plane
• LowLeakageInductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
8
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IRF2907Z/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
1
2
3
1- GATE
1- GATE
2- DRAIN
2- COLLECTOR
3- EMITTER
4- COLLECTOR
3- SOURCE
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
4
TO-220AB Part Marking Information
Note: "P" in assembly line
position indicates "Lead-Free"
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9
IRF2907Z/S/L
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
10
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IRF2907Z/S/L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
TO-262 Part Marking Information
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11
IRF2907Z/S/L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
TO-220AB package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/04
12
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相关型号：
IRF2907ZSTRL
Power Field-Effect Transistor, 160A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
INFINEON
IRF2907ZSTRLPBF
Power Field-Effect Transistor, 160A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
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