IRF3315 [INFINEON]
Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A); 功率MOSFET （ VDSS = 150V ， RDS（ON） = 0.07ohm ，ID = 27A ）
| 型号： | IRF3315 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A) |
| 文件： | 总8页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-91623A
APPROVED
IRF3315
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 150V
RDS(on) = 0.07Ω
l Fully Avalanche Rated
G
Description
ID = 27A
S
FifthGenerationHEXFETsfromInternationalRectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-
220 contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
27
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
19
A
108
PD @TC = 25°C
Power Dissipation
136
W
W/°C
V
Linear Derating Factor
0.91
± 20
350
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
12
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
13.6
2.5
mJ
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
Units
RθJC
RθCS
RθJA
1.1
–––
62
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
°C/W
www.irf.com
1
12/09/98
APPROVED
IRF3315
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
150 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.187 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance ––– ––– 0.07
Ω
V
S
VGS = 10V, ID = 12A
VDS = VGS, ID = 250µA
VDS = 50V, ID = 12A
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 125°C
VGS = 20V
Gate Threshold Voltage
2.0
––– 4.0
Forward Transconductance
11.4 ––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 95
––– ––– 11
––– ––– 47
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 12A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 120V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
9.6 –––
32 –––
49 –––
38 –––
VDD = 75V
ID = 12A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 5.1Ω
RD = 5.9Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
D
4.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
nH
pF
G
7.5
S
Ciss
Coss
Crss
Input Capacitance
––– 1300 –––
––– 300 –––
––– 160 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
27
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 108
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.3
––– 174 260
––– 1.2 1.7
V
TJ = 25°C, IS = 12A, VGS = 0V
ns
TJ = 25°C, IF = 12A
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 12A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS
,
max. junction temperature. ( See fig. 11 )
TJ ≤ 175°C
Starting TJ = 25°C, L = 4.9mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25 Ω, IAS = 12A. (See Figure 12)
2
www.irf.com
APPROVED
IRF3315
1000
100
10
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
VGS
TOP
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
INPUTNEWDATA
INPUTNEWDATA
BOTTOM 4.5V
BOTTOM 4.5V
100
10
1
4.5V
4.5V
20µs PULSE WIDTH
°
20µs PULSE WIDTH
°
T = 175 C
J
T = 25 C
J
1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
100
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
27A
=
I
D
INPUTNEWDATA
INPUTNEWDATA
°
T = 25 C
J
°
T = 175 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
= 10V
GS
1
4.0
5.0
V
6.0
7.0
8.0 9.0
10.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
3
APPROVED
IRF3315
20
3000
A
= 12
I
D
V
C
C
= 0V,
f = 1MHz
C SHORTED
ds
GS
iss
rss
oss
V
V
V
= 120V
= 75V
= 30V
DS
DS
DS
= C + C
gs
gd
ds
gd ,
= C
= C + C
2500
C
16
12
8
gd
C
iss
2000
1500
C
oss
1000
500
0
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
20
40
60
80
100
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
INPUTNEWDATA
°
T = 175 C
J
10us
INPUTNEWDATA
100us
1ms
°
T = 25 C
J
°
= 25 C
T
C
°
T
= 175 C
J
10ms
V
= 0 V
Single Pulse
GS
1
0.1
0.3
1
10
100
1000
0.6
0.9
1.2
1.5
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
www.irf.com
APPROVED
IRF3315
RD
30
25
20
15
10
5
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
INPUTNEWDATA
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
INPUTNEWDATA
1
D = 0.50
0.20
P
DM
0.10
0.05
0.1
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
APPROVED
IRF3315
1000
I
D
TOP
4.9A
8.5A
BOTTOM 12A
1 5V
800
600
DRIVER
L
V
G
DS
400
200
0
D.U.T
R
+
-
V
D D
I
A
AS
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
V
(BR)DSS
Fig 12c. Maximum Avalanche Energy
t
p
Vs. DrainCurrent
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
www.irf.com
APPROVED
IRF3315
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
APPROVED
IRF3315
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B
-
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A
-
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
M IN
LEAD ASSIG NM ENTS
1
2
3
4
- GATE
1
2
3
- DRAIN
- SOU RC E
- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B
A
M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
N OTES:
1
2
D IM ENSIONING
&
TOLERANCING PER ANSI Y14.5M , 1982.
3
4
OUTLINE CONFORM S TO JEDEC OUTLINE TO-220AB.
HEATSINK LEAD M EASUREM ENTS DO NOT INCLU DE BURRS.
C ONTROLLING DIM ENSION : INCH
&
Part Marking Information
TO-220AB
EXAM PLE : TH IS IS AN IRF1010
W ITH ASSEM BLY
A
INTERN ATION AL
R EC TIFIER
LOGO
PART NU M BER
LOT CO DE 9B1M
IRF1010
9246
9B
1M
D ATE COD E
(YYW W )
ASSEMBLY
L OT
COD E
YY
=
YEAR
= W EEK
W W
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
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IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
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http://www.irf.com/
Data and specifications subject to change without notice.
12/98
8
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