IRF3707ZSTRL [INFINEON]
Power Field-Effect Transistor, 59A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3;
| 型号： | IRF3707ZSTRL |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 59A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 |
| 文件： | 总10页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93937B
IRF3707
IRF3707S
SMPS MOSFET
IRF3707L
Applications
HEXFET® Power MOSFET
l High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
VDSS
30V
RDS(on) max
ID
12.5mΩ
62A
l High Frequency Buck Converters for
Computer Processor Power
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on)
l Fully Characterized Avalanche Voltage
and Current
D2Pak
IRF3707S
TO-262
IRF3707L
TO-220AB
IRF3707
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-to-Source Voltage
± 20
V
ID @ TC = 25°C
ID @ TC = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
62
52
A
248
PD @TC = 25°C
PD @TC = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
87
61
W
W
0.59
mW/°C
°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 175
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
1.73
–––
62
Units
RθJC
RθCS
RθJA
RθJA
–––
0.50
–––
–––
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Junction-to-Ambient (PCB mount)*
40
*
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes through are on page 10
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1
8/22/00
IRF3707/3707S/3707L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 ––– –––
––– 0.027 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
––– 12.6 17
1.0 ––– 3.0
9.0 12.5
VGS = 10V, ID = 15A
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
mΩ
V
VGS = 4.5V, ID = 12A
VDS = VGS, ID = 250µA
––– ––– 20
––– ––– 100
––– ––– 200
––– ––– -200
VDS = 24V, VGS = 0V
µA
Drain-to-Source Leakage Current
VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = 16V
IGSS
nA
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
37
––– –––
19 –––
8.2 –––
6.3 –––
S
VDS = 15V, ID = 49.6A
ID = 24.8A
Qg
–––
–––
–––
–––
–––
–––
Qgs
Qgd
Qoss
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
nC VDS = 15V
VGS = 4.5V
18
27
VGS = 0V, VDS = 15V
VDD = 15V
8.5 –––
78 –––
ID = 24.8A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 11.8 –––
––– 3.3 –––
RG = 1.8Ω
VGS = 4.5V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 1990 –––
––– 707 –––
Output Capacitance
Reverse Transfer Capacitance
VDS = 15V
–––
50 –––
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
213
62
Units
mJ
IAR
A
Diode Characteristics
Symbol
IS
Parameter
Min. Typ. Max. Units
Conditions
D
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
––– –––
––– –––
62
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
248
S
––– 0.88 1.3
––– 0.8 –––
V
TJ = 25°C, IS = 31A, VGS = 0V
TJ = 125°C, IS = 31A, VGS = 0V
TJ = 25°C, IF = 31A, VR=20V
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
––– 39
––– 49
––– 42
––– 62
59
74
63
93
ns
Qrr
trr
nC di/dt = 100A/µs
ns TJ = 125°C, IF = 31A, VR=20V
nC di/dt = 100A/µs
Qrr
2
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IRF3707/3707S/3707L
1000
100
10
1000
VGS
10.0V
9.0V
8.0V
7.0V
6.0V
5.0V
4.5V
VGS
TOP
TOP
10.0V
9.0V
8.0V
7.0V
6.0V
5.0V
4.5V
100
10
1
BOTTOM 3.5V
BOTTOM 3.5V
3.5V
3.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.5
1000
62A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 175 C
J
100
V
= 15V
DS
20µs PULSE WIDTH
V
=10V
GS
10
3.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
4.0
5.0
6.0 7.0
8.0
°
T , Junction Temperature( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRF3707/3707S/3707L
3000
10
8
V
= 0V,
f = 1MHz
C
I
D
= 24.8A
GS
C
= C + C
SHORTED
ds
iss
gs
gd ,
gd
V
= 15V
DS
C
= C
gd
rss
2500
2000
1500
1000
500
C
= C + C
ds
oss
C
iss
6
4
C
oss
2
C
rss
0
0
1
10
100
0
10
20
30
40
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
°
T = 175 C
J
100us
°
T = 25 C
J
1ms
1
10ms
°
T = 25 C
C
°
T = 175 C
Single Pulse
J
V
= 0 V
GS
0.1
0.2
1
0.6
1.0
1.4
1.8
1
10
100
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF3707/3707S/3707L
RD
VDS
70
60
50
40
30
20
10
0
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
0.01
0.02
0.01
SINGLE PULSE
t
1
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF3707/3707S/3707L
0.013
0.012
0.011
0.010
0.009
0.10
0.09
VGS = 4.5V
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
I
= 31A
D
VGS = 10V
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0
50
100
150
200
250
V
Gate -to -Source Voltage (V)
I
, Drain Current ( A )
GS,
D
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
+
V
DS
600
D.U.T.
-
V
G
I
D
V
GS
TOP
10.1A
20.7A
BOTTOM 24.8A
3mA
Charge
500
400
300
200
100
0
I
I
D
G
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test circuit
and Waveforms
15V
V
(B R )D S S
DRIVER
L
t
p
V
DS
D.U.T
R
+
G
V
DD
-
25
50
75
100
125
150
175
I
AS
20 V
°
Starting T , Junction Temperature ( C)
0.01
t
Ω
J
p
I
A S
Fig 15a&b. Unclamped Inductive Test circuit
Fig 15c. Maximum Avalanche Energy
and Waveforms
Vs. Drain Current
6
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IRF3707/3707S/3707L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
-
B
-
3.7 8 (.14 9)
3.5 4 (.13 9)
2.87 (.1 13)
2.62 (.1 03)
4.69 (.1 85)
4.20 (.1 65)
1 .32 (.05 2)
1 .22 (.04 8)
- A
-
6.47 (.255 )
6.10 (.240 )
4
15.24 (.600 )
14.84 (.584 )
1.15 (.045)
M IN
LE A D A S S IG N M E N T S
1
2
3
4
- G A T E
1
2
3
- D R A IN
- S O U R C E
- D R A IN
1 4.09 (.5 55)
1 3.47 (.5 30)
4 .06 (.16 0)
3 .55 (.14 0)
0 .93 (.03 7)
0 .69 (.02 7)
0.5 5 (.0 22)
0.4 6 (.0 18)
3X
3X
1 .4 0 (.05 5)
3 X
1 .1 5 (.04 5)
0.36 (.0 14)
M
B
A
M
2 .92 (.11 5)
2 .64 (.10 4)
2.54 (.100)
2X
N O TE S :
1
2
D IME N S IO N IN G
&
TO LE R A N C IN G P E R A N S I Y 14.5M , 19 82.
3
4
O U TLIN E C O N F O R M S TO JE D E C O U T LIN E T O -2 20A B .
C O N TR O LLIN G D IM E N S IO N : IN C H
H E A T S IN K
&
LE A D M E A S U R E M E N T S D O N O T IN C LU D E B U R R S .
TO-220AB Part Marking Information
E XAM PL E : TH IS IS A N IR F 1010
W ITH AS SE M BLY
A
INTE R N AT ION AL
R E C TIFIE R
PA R T N U M BE R
LO T C O D E 9B 1M
IR F 1010
9246
LO G O
9B
1M
D ATE C O D E
(YYW W )
A S SE M B LY
LOT
C O D E
YY
=
YEA R
= W EE K
W W
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7
IRF3707/3707S/3707L
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
10.16 (.400)
REF.
- B -
1.32 (.052)
4.69 (.185)
4.20 (.165)
1.40 (.055)
MAX.
- A -
1.22 (.048)
2
6.47 (.255)
6.18 (.243)
1.78 (.070)
1.27 (.050)
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
1
3
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
8.89 (.350)
REF.
1.40 (.055)
1.14 (.045)
1.39 (.055)
1.14 (.045)
3X
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
3X
5.08 (.200)
0.25 (.010)
M
B A M
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
LEAD ASSIGNMENTS
1 - GATE
NO TES:
1
2
3
4
DIMENSIONS AFTER SO LDER DIP.
17.78 (.700)
2 - DRAIN
3 - SOURCE
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
3.81 (.150)
2.54 (.100)
2.08 (.082)
2X
2X
D2Pak Part Marking Information
A
INTERNATIONAL
RECTIFIER
PART NUMBER
F530S
LOGO
9246
1M
DATE CODE
(YYW W )
9B
ASSEMBLY
YY
=
YEAR
= W EEK
LOT CODE
W W
8
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IRF3707/3707S/3707L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
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9
IRF3707/3707S/3707L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR R
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
F E ED D IRE C TIO N
TR L
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
F E ED D IR E CT IO N
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
M AX.
60.00 (2.362)
M IN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIM ENSION: MILLIM ETER.
3. DIM ENSION MEASURED
26.40 (1.039)
24.40 (.961)
4
@ HUB.
3
4. INCLUDES FLANGE DISTORTION
@
OUTER EDGE.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
This is only applied to TO-220AB package
Starting TJ = 25°C, L = 0.7 mH
RG = 25Ω, IAS = 24.8 A.
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IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 8/00
10
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