IRF6217PBF-1 [INFINEON]
Industry-standard pinout SO-8 Package;型号: | IRF6217PBF-1 |
厂家: | Infineon |
描述: | Industry-standard pinout SO-8 Package |
文件: | 总8页 (文件大小:200K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IRF6217PbF-1
HEXFET® Power MOSFET
VDS
RDS(on) max
(@VGS = -10V)
Qg (typical)
ID
-150
2.4
6
V
Ω
A
1
2
3
4
8
D
S
S
7
D
nC
A
6
S
G
D
5
-0.7
D
(@TA = 25°C)
SO-8
Top View
Features
Industry-standard pinout SO-8 Package
Benefits
Multi-Vendor Compatibility
⇒
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Base Part Number
Package Type
Orderable Part Number
Quantity
Tube/Bulk
Tape and Reel
95
4000
IRF6217PbF-1
IRF6217TRPbF-1
IRF6217PbF-1
SO-8
Absolute Maximum Ratings
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Max.
-0.7
-0.5
-5.0
2.5
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
A
PD @TA = 25°C
Power Dissipation
W
W/°C
V
Linear Derating Factor
0.02
± 20
4.5
VGS
dv/dt
TJ
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Symbol
RθJL
Parameter
Junction-to-Drain Lead
Typ.
–––
Max.
20
Units
RθJA
Junction-to-Ambient
–––
50
°C/W
Notes through are on page 8
1
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IRF6217PbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
-150 ––– –––
Conditions
VGS = 0V, ID = -250μA
V(BR)DSS
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
––– -0.17 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 2.4
-3.0 ––– -5.0
––– ––– -25
––– ––– -250
––– ––– -100
––– ––– 100
Ω
V
VGS = -10V, ID = -0.42A
VDS = VGS, ID = -250μA
VDS = -150V, VGS = 0V, TJ = 25°C
VDS = -120V, VGS = 0V, TJ = 125°C
IDSS
Drain-to-Source Leakage Current
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = -20V
nA
IGSS
VGS = 20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
gfs
0.55 ––– –––
––– 6.0 9.0
S
VDS = -50V, ID = -0.42A
ID = -0.42A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
1.6 2.4
2.8 4.2
12 –––
7.2 –––
14 –––
16 –––
nC VDS = -120V
VGS = -10V,
VDD = -75V
ID = -0.42A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.2Ω
VGS = -10V
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 150 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
30 –––
10 –––
VDS = -25V
pF
ƒ = 1.0KHz
––– 150 –––
VGS = 0V, VDS = -1.0V, ƒ = 1.0KHz
VGS = 0V, VDS = -120V, ƒ = 1.0KHz
VGS = 0V, VDS = 0V to -120V
–––
–––
15 –––
45 –––
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
15
Units
mJ
EAS
IAR
Avalanche Current
–––
-1.4
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
-1.8
-5.0
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– -1.6
––– 51 77
––– 86 130
V
TJ = 25°C, IS = -0.42A, VGS = 0V
ns
TJ = 25°C, IF = -0.42A
Qrr
nC di/dt = -100A/μs
2
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June 30, 2014
IRF6217PbF-1
10
10
VGS
VGS
TOP
-15V
-12V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
TOP
-15V
-12V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM
BOTTOM
1
1
-5.0V
0.1
0.1
-5.0V
20μs PULSE WIDTH
20μs PULSE WIDTH
°
T = 150
J
C
°
T = 25
J
C
0.01
0.01
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.5
-0.70A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
°
C
T = 25
J
C
T = 150
J
1
0.1
V
= -50V
DS
20μs PULSE WIDTH
V
= -10V
GS
0.01
-60 -40 -20
0
20
40
60
80 100 120 140 160
°
4
5
7
8
9
11
12
T , Junction Temperature
( C)
-V , Gate-to-Source Voltage (V)
GS
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
3
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June 30, 2014
IRF6217PbF-1
12
10
8
10000
1000
100
10
I
V
C
= 0V,
f = 1 MHZ
=
-0.42A
V
V
V
= -120V
= -75V
= -30V
D
GS
DS
DS
DS
= C + C
,
C
SHORTED
iss
gs
gd
ds
C
= C
rss
gd
C
= C + C
oss
ds
gd
Ciss
6
Coss
Crss
4
2
1
0
0
2
4
6
8
1
10
100
1000
Q
, Total Gate Charge (nC)
G
-V , Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
10
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
°
T = 150
C
J
1
1
100μsec
1msec
0.1
0.01
10msec
°
T = 25
C
J
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
0.1
0.2
0.6
0.9
1.3
1.6
1
10
100
1000
-V ,Source-to-Drain Voltage (V)
SD
-V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF6217PbF-1
1.0
0.8
0.6
0.4
0.2
0.0
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
150
°
C)
, Case Temperature
(
C
10%
Fig 9. Maximum Drain Current Vs.
V
GS
Ambient Temperature
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJA
A
0.1
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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June 30, 2014
IRF6217PbF-1
1.94
1.92
1.90
1.88
1.86
1.84
1.82
1.80
9.00
8.00
7.00
6.00
5.00
4.00
3.00
2.00
1.00
V
= -10V
GS
I
= -0.7A
D
0.00
0.25
0.50
0.75
1.00
1.25
1.50
4.5
6.0
-V
7.5
9.0
10.5
12.0
13.5
15.0
Gate -to -Source Voltage (V)
-I , Drain Current (A)
GS,
D
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
-VGS
50KΩ
.3μF
.2μF
12V
Q
Q
GD
GS
35
-
I
V
+
DS
D
V
D.U.T.
G
TOP
-0.6A
-1.1A
-1.4A
V
GS
30
25
20
15
10
5
Charge
-3mA
BOTTOM
I
I
D
G
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
L
V
DS
I
AS
D.U.T
R
G
V
DD
I
A
AS
DRIVER
-20V
0.01
Ω
t
p
0
25
50
75
100
125
150
°
( C)
Starting Tj, Junction Temperature
t
p
15V
V
(BR)DSS
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF6217PbF-1
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
INCHES
MILLIMETERS
DIM
D
B
MIN
.0532
A1 .0040
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A
E
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
e1 .025 BASIC
0.635 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
FOOTPRINT
NOTES:
1. DIMENSIONING& TOLERANCINGPER ASME Y14.5M-1994.
2. CONTROLLINGDIMENSION: MILLIMETER
8X 0.72 [.028]
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OU T L INE CONF OR MS T O JEDE C OU T L INE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
DIMENSION IS THE LENGT H OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DAT E CODE (YWW)
P = DISGNATES LEAD - FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEE K
A = AS S E MB L Y S IT E CODE
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
7
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June 30, 2014
IRF6217PbF-1
SO-8 Tape and Reel (Dimensions are shown in millimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 15mH, RG = 25Ω, IAS = -1.4A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
Qualification information†
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
SO-8
(per JEDEC J-S TD-020D††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visithttp://www.irf.com/whoto-call/
8
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June 30, 2014
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