IRF6609 [INFINEON]
Power MOSFET; 功率MOSFET
| 型号： | IRF6609 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET |
| 文件： | 总10页 (文件大小：231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95822A
IRF6609
HEXFET® Power MOSFET
VDSS
20V
RDS(on) max
2.0mΩ@VGS = 10V
2.6mΩ@VGS = 4.5V
Qg
46nC
l Low Conduction Losses
l Low Switching Losses
l Ideal Synchronous Rectifier MOSFET
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount
Techniques
DirectFETISOMETRIC
MT
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
SQ SX ST MQ MX MT
Description
The IRF6609 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6609 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation
of processors operating at higher frequencies. The IRF6609 has been optimized for parameters that are critical in synchronous buck
operating from 12 volt buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6609 offers
particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Max.
20
Units
V
VDS
V
Gate-to-Source Voltage
±20
150
31
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TC = 25°C
D
D
D
@ TA = 25°C
@ TA = 70°C
A
25
250
2.8
1.8
89
DM
Power Dissipation
P
P
P
@TA = 25°C
@TA = 70°C
@TC = 25°C
D
D
D
Power Dissipation
W
Power Dissipation
Linear Derating Factor
Operating Junction and
0.022
-40 to + 150
W/°C
°C
T
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Ambient
Junction-to-Ambient
Typ.
–––
12.5
20
Max.
45
Units
RθJA
RθJA
–––
–––
1.4
Junction-to-Ambient
Junction-to-Case
RθJA
°C/W
RθJC
–––
1.0
RθJ-PCB
Junction-to-PCB Mounted
–––
Notes through are on page 10
www.irf.com
1 11/10/04
IRF6609
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
20
–––
–––
V
VGS = 0V, ID = 250µA
∆ΒVDSS/∆TJ
RDS(on)
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
–––
15
––– mV/°C Reference to 25°C, ID = 1mA
mΩ
1.6
2.0
2.6
VGS = 10V, ID = 31A
VGS = 4.5V, ID = 25A
VDS = VGS, ID = 250µA
2.0
VGS(th)
Gate Threshold Voltage
1.55
–––
–––
–––
–––
–––
91
–––
-6.1
–––
–––
–––
2.45
V
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
1.0
150
100
µA VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA
S
V
GS = 20V
VGS = -20V
VDS = 10V, ID = 25A
––– -100
gfs
–––
46
15
4.7
15
11
20
26
24
95
26
9.8
–––
69
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
td(on)
tr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 10V
nC VGS = 4.5V
ID = 17A
Gate Charge Overdrive
See Fig. 17
Switch Charge (Qgs2 + Qgd)
Output Charge
nC VDS = 10V, VGS = 0V
VDD = 16V, VGS = 4.5V
ID = 25A
Turn-On Delay Time
Rise Time
td(off)
tf
Turn-Off Delay Time
Fall Time
ns Clamped Inductive Load
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 6290 –––
––– 1850 –––
VGS = 0V
pF VDS = 10V
ƒ = 1.0MHz
–––
860
–––
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
230
25
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
31
MOSFET symbol
D
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
ISM
–––
–––
250
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
0.80
32
1.2
48
39
V
T = 25°C, I = 25A, V = 0V
J S GS
Reverse Recovery Time
Reverse Recovery Charge
ns T = 25°C, I = 25A
J F
Qrr
di/dt = 100A/µs
26
nC
2
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IRF6609
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
BOTTOM
BOTTOM
1
2.7V
1
2.7V
1
≤
60µs PULSE WIDTH
Tj = 25°C
≤
60µs PULSE WIDTH
Tj = 150°C
0.1
1
0.1
10
100
0.1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.0
1.5
I
= 31A
D
V
= 10V
GS
100.0
10.0
1.0
T
= 150°C
J
1.0
T
= 25°C
J
V
= 10V
DS
≤
60µs PULSE WIDTH
0.1
0.5
2.0
3.0
4.0
5.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
vs.Temperature
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3
IRF6609
100000
V
12
10
8
= 0V,
= C
f = 1 MHZ
GS
I
= 17A
C
C
C
+ C , C
SHORTED
D
V
= 20V
iss
gs
gd
ds
DS
VDS= 10V
= C
rss
oss
gd
= C + C
ds
gd
10000
1000
100
Ciss
6
Coss
Crss
4
2
0
0
20
40
60
80
100
120
1
10
, Drain-to-Source Voltage (V)
100
Q
Total Gate Charge (nC)
G
V
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100.0
10.0
1.0
T
= 150°C
J
100µsec
1
T
= 25°C
J
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
V
= 0V
GS
10msec
0.1
0.1
0
1
10
100
0.0
0.4
0.8
1.2
1.6
2.0
V
, Drain-toSource Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF6609
2.5
2.0
1.5
1.0
150
120
90
60
30
0
I
= 250µA
D
-75 -50 -25
0
25
50
75 100 125 150
25
50
75
100
125
150
T
, Temperature ( °C )
T
J
, Junction Temperature (°C)
J
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs.
CaseTemperature
100
D = 0.50
10
1
0.20
0.10
0.05
0.02
0.01
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.1
0.6784
17.299
17.566
9.4701
0.00086
0.57756
8.94
τ
τ
J τJ
τ
Cτ
τ
1τ1
τ
τ
2τ2
3τ3
4τ4
0.01
0.001
0.0001
Ci= τi/Ri
106
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF6609
10
1000
800
600
400
200
0
I
= 31A
I
D
D
TOP
11A
14A
25A
8
BOTTOM
6
4
T
T
= 125°C
J
J
2
= 25°C
8.0
0
2.0
4.0
6.0
10.0
25
50
75
100
125
150
V
, Gate-to-Source Voltage (V)
GS
Starting T , Junction Temperature (°C)
J
Fig 12. On-Resistance Vs. Gate Voltage
Fig 13c. Maximum Avalanche Energy
Vs. DrainCurrent
15V
LD
VDS
DRIVER
+
L
V
DS
+
-
VDD
D.U.T
AS
R
G
V
DD
-
D.U.T
I
A
V
2
GS
VGS
0.01Ω
t
p
Pulse Width < 1µs
Duty Factor < 0.1%
Fig 13a. Unclamped Inductive Test Circuit
Fig 14a. Switching Time Test Circuit
VDS
V
(BR)DSS
t
p
90%
10%
VGS
td(on)
td(off)
tr
tf
I
AS
Fig 14b. Switching Time Waveforms
Fig 13b. Unclamped Inductive Waveforms
6
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IRF6609
Driver Gate Drive
P.W.
P.W.
D =
Period
D.U.T
Period
+
*
=10V
V
GS
CircuitLayoutConsiderations
• LowStrayInductance
• Ground Plane
• LowLeakageInductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
.2µF
.3µF
12V
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 17. Gate Charge Waveform
Fig 16. Gate Charge Test Circuit
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7
IRF6609
DirectFET Outline Dimension, MT Outline
(Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DIMENSIONS
IMPERIAL
METRIC
MAX
MIN
CODE MIN
MAX
0.250
0.199
0.156
0.018
0.032
0.036
0.072
0.040
0.026
0.039
0.104
0.028
0.003
0.006
6.35
5.05
3.95
0.45
0.82
0.92
1.82
A
B
C
D
E
F
0.246
0.189
0.152
0.014
0.031
0.035
0.070
6.25
4.80
3.85
0.35
0.78
0.88
1.78
0.98
0.63
O.88
2.46
0.59
0.03
0.11
NOTE: CONTROLLING
DIMENSIONS ARE IN MM
G
H
J
1.02 0.039
0.67
1.01
2.63
0.025
0.035
0.097
K
L
0.70 0.023
M
N
P
0.08
0.14
0.001
0.004
8
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IRF6609
DirectFET Substrate and PCB Layout, MT Outline
(Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
1- Drain
2- Drain
3- Source
4- Source
5- Gate
6- Drain
7- Drain
1
2
6
7
3
4
5
DirectFET Tape & Reel Dimension
(Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6618). For 1000 parts on 7" reel,
order IRF6618TR1
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
METRIC
MAX
IMPERIAL
METRIC
MIN MAX
IMPERIAL
CODE
MIN
MAX
N.C
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
A
B
C
D
E
F
330.0
20.2
12.8
1.5
12.992
0.795
0.504
0.059
3.937
N.C
177.77
19.06
13.5
1.5
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
N.C
0.75
0.53
0.059
2.31
N.C
N.C
N.C
0.520
N.C
12.8
N.C
100.0
N.C
58.72
N.C
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
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9
IRF6609
DirectFET Part Marking
Notes:
ꢀ Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
TC measured with thermal couple mounted to top (Drain) of
part.
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 0.75mH,
RG = 25Ω, IAS = 25A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in. square Cu board.
R is measured at TJ of approximately 90°C.
θ
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/04
10
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