IRF6610TR1PBF [INFINEON]
Power Field-Effect Transistor, 15A I(D), 20V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, ISOMETRIC-3;
| 型号： | IRF6610TR1PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 15A I(D), 20V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, ISOMETRIC-3 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97012
IRF6610
DirectFET™ Power MOSFET ꢀ
Typical values (unless otherwise specified)
ꢂLead and Bromide Free ꢁ
VDSS
20V max ±20V max
VGS
RDS(on)
5.2mΩ@ 10V 8.2mΩ@ 4.5V
RDS(on)
ꢂLow Profile (<0.7 mm)
ꢂDual Sided Cooling Compatible ꢁ
ꢂUltra Low Package Inductance
ꢂOptimized for High Frequency Switching ꢁ
ꢂIdeal for CPU Core DC-DC Converters
Qg tot Qgd
11nC
Qgs2
1.3nC
Qrr
Qoss Vgs(th)
3.6nC
6.4nC 5.9nC
2.1V
ꢂOptimized for both Sync.FET and some Control FET
applicationꢁ
ꢂLow Conduction and Switching Losses
ꢂCompatible with existing Surface Mount Techniques ꢁ
DirectFET™ ISOMETRIC
SQ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)ꢁ
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6610 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6610 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6610 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Max.
20
Parameter
Units
V
VDS
Drain-to-Source Voltage
±20
15
V
Gate-to-Source Voltage
GS
Continuous Drain Current, VGS @ 10V ꢃ
Continuous Drain Current, VGS @ 10V ꢃ
Continuous Drain Current, VGS @ 10V ꢄ
Pulsed Drain Current ꢅ
I
I
I
I
@ TA = 25°C
D
D
D
12
@ TA = 70°C
@ TC = 25°C
A
66
120
13
DM
EAS
IAR
Single Pulse Avalanche Energy ꢆ
Avalanche Current ꢅ
mJ
A
12
30
25
20
15
10
5
6.0
5.0
4.0
3.0
2.0
1.0
0.0
I
= 15A
I = 12A
D
D
V
V
= 16V
DS
DS
= 10V
T
= 125°C
J
T
= 25°C
6
J
0
3
4
5
7
8
9
10
0
2
4
6
8
10
12
14
16
Q
Total Gate Charge (nC)
G
V
Gate -to -Source Voltage (V)
GS,
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Notes:
ꢄTC measured with thermocouple mounted to top (Drain) of part.
ꢅRepetitive rating; pulse width limited by max. junction temperature.
ꢆStarting TJ = 25°C, L = 0.18mH, RG = 25Ω, IAS = 12A.
ꢁClick on this section to link to the appropriate technical paper.
ꢀClick on this section to link to the DirectFET Website.
ꢃSurface mounted on 1 in. square Cu board, steady state.
www.irf.com
1
05/25/05
IRF6610
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250µA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
20
–––
–––
–––
1.65
–––
–––
–––
–––
–––
41
–––
–––
V
Reference to 25°C, I = 1mA
∆ΒVDSS/∆TJ
RDS(on)
15
––– mV/°C
D
VGS = 10V, ID = 15A ꢁ
VGS = 4.5V, ID = 12A ꢁ
VDS = VGS, ID = 250µA
5.2
8.2
2.1
-5.2
–––
–––
–––
–––
–––
11
6.8
mΩ
10.7
2.55
VGS(th)
Gate Threshold Voltage
V
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 20V
1.0
150
100
-100
–––
17
µA
nA
S
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
VGS = -20V
VDS = 10V, ID = 12A
gfs
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 10V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
3.9
1.3
3.6
2.4
4.9
5.9
2.0
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VGS = 4.5V
ID = 12A
nC
See Fig. 15
VDS = 10V, VGS = 0V
nC
Gate Resistance
Ω
VDD = 16V, VGS = 4.5V ꢁ
td(on)
tr
td(off)
tf
Turn-On Delay Time
ID = 12A
Rise Time
51
Clamped Inductive Load
Turn-Off Delay Time
15
ns
Fall Time
5.7
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 1520 –––
VDS = 10V
ƒ = 1.0MHz
Output Capacitance
–––
–––
440
220
–––
–––
pF
Reverse Transfer Capacitance
Diode Characteristics
Conditions
MOSFET symbol
showing the
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
2.8
(Body Diode)
A
ISM
integral reverse
Pulsed Source Current
–––
–––
120
p-n junction diode.
(Body Diode)
ꢀ
TJ = 25°C, IS = 12A, VGS = 0V ꢁ
TJ = 25°C, IF = 12A
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
12
1.0
18
V
ns
nC
Qrr
di/dt = 100A/µs ꢁ
2.4
3.6
Notes:
ꢁPulse width ≤ 400µs; duty cycle ≤ 2%.
ꢀRepetitive rating; pulse width limited by max. junction temperature.
2
www.irf.com
IRF6610
Absolute Maximum Ratings
Max.
Parameter
Units
2.2
P
P
P
@TA = 25°C
@TA = 70°C
@TC = 25°C
Power Dissipation ꢁ
Power Dissipation ꢁ
Power Dissipation ꢄ
W
D
D
D
P
J
1.4
42
270
T
T
T
Peak Soldering Temperature
Operating Junction and
°C
-40 to + 150
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Ambient ꢁꢅ
Junction-to-Ambient ꢀꢅ
Typ.
–––
12.5
20
Max.
58
Units
°C/W
W/°C
RθJA
RθJA
–––
–––
3.0
RθJA
Junction-to-Ambient ꢃꢅ
Junction-to-Case ꢄꢅ
RθJC
–––
1.4
RθJ-PCB
Junction-to-PCB Mounted
Linear Derating Factor ꢁ
–––
0.017
100
10
D = 0.50
0.20
0.10
0.05
Ri (°C/W) τi (sec)
0.02
0.01
R1
R1
R2
R2
R3
R3
R4
R4
R5
R5
1
1.6195
0.000126
0.001354
0.375850
7.41
τ
τ
J τJ
τ
AτA
2.14056
22.2887
20.0457
11.9144
τ
1τ1
τ
τ
τ
2τ2
3τ3
4τ4
5τ5
0.1
Ci= τi/Ri
Ci= τi/Ri
99
SINGLE PULSE
( THERMAL RESPONSE )
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient ꢁ
Notes:
ꢄTC measured with thermocouple incontact with top (Drain) of part.
ꢁSurface mounted on 1 in. square Cu board, steady state.
ꢅR is measured at TJ of approximately 90°C.
ꢀUsed double sided cooling , mounting pad.
ꢃMounted on minimum footprint full size board with metalized
back and with small clip heatsink.
θ
ꢃMounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3
ꢃMounted to a PCB with
small clip heatsink (still air)
ꢁSurface mounted on 1 in. square Cu
board (still air).
www.irf.com
IRF6610
1000
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
10
1
BOTTOM
BOTTOM
60µs PULSE WIDTH
Tj = 25°C
≤
2.5V
1
0.1
60µs PULSE WIDTH
Tj = 150°C
≤
2.5V
0.01
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 4. Typical Output Characteristics
Fig 5. Typical Output Characteristics
1000
1.5
1.0
0.5
V
= 10V
I
= 15A
DS
≤60µs PULSE WIDTH
V
V
= 10V
D
GS
GS
= 4.5V
100
10
1
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
0.1
1
2
3
4
5
-60 -40 -20
0
20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Typical Transfer Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
40
10000
V
= 0V,
= C
f = 1 MHZ
GS
T
= 25°C
J
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
rss
oss
gd
= C + C
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
ds
gd
30
20
10
0
C
iss
1000
C
oss
C
rss
100
0
20
40
60
80
100 120 140
1
10
, Drain-to-Source Voltage (V)
100
V
DS
I , Drain Current (A)
D
Fig 9. Typical On-Resistance Vs.
Drain Current and Gate Voltage
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
www.irf.com
IRF6610
1000
100
10
1
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100µsec
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
1
T
T
= 25°C
A
J
1msec
= 150°C
V
= 0V
GS
Single Pulse
10msec
0
0.1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
, Source-to-Drain Voltage (V)
0.10
1.00
10.00
100.00
V
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig11. Maximum Safe Operating Area
70
2.5
2.0
1.5
1.0
60
50
40
30
20
10
0
I
= 250µA
D
25
50
T
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
, Case Temperature (°C)
T
, Temperature ( °C )
C
J
Fig 12. Maximum Drain Current vs. Case Temperature
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
60
50
40
30
20
10
0
I
TOP
D
3.6A
5.3A
BOTTOM 12A
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy Vs. Drain Current
www.irf.com
5
IRF6610
Current Regulator
Same Type as D.U.T.
Id
Vds
50KΩ
Vgs
.2µF
.3µF
12V
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
VGS
R
G
V
DD
-
I
A
20V
0.01Ω
t
p
I
AS
Fig 16c. Unclamped Inductive Waveforms
Fig 16b. Unclamped Inductive Test Circuit
LD
VDS
VDS
90%
+
-
VDD
10%
VGS
D.U.T
VGS
td(on)
td(off)
tr
Pulse Width < 1µs
Duty Factor < 0.1%
tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
www.irf.com
IRF6610
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
ꢃ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
ꢀ
-
Reverse
Recovery
Current
Body Diode Forward
- ꢄ
Current
di/dt
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
ꢁ
V
DD
VDD
• di/dt controlled by RG
Re-Applied
Voltage
RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Body Diode
Inductor Current
Forward Drop
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET™ Substrate and PCB Layout, SQ Outline
(Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes
all recommendations for stencil and substrate designs.
www.irf.com
7
IRF6610
DirectFET™ Outline Dimension, SQ Outline
(Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes
all recommendations for stencil and substrate designs.
DIMENSIONS
IMPERIAL
METRIC
MAX MIN
CODE
MIN
MAX
0.191
0.156
0.112
0.018
0.020
0.020
0.036
0.032
N/A
4.85
3.95
A
B
C
D
E
F
4.75
3.70
2.75
0.35
0.48
0.48
0.88
0.78
N/A
0.187
0.146
2.85 0.108
0.45 0.014
0.52
0.52
0.019
0.019
0.92 0.035
0.82 0.031
G
H
J
N/A
N/A
0.97 0.037
2.10 0.079
K
L
0.93
2.00
0.59
0.03
0.08
0.038
0.083
0.028
0.003
0.007
0.70
0.08
M
N
P
0.023
0.001
0.17 0.003
DirectFET™ Part Marking
8
www.irf.com
IRF6610
DirectFET™ Tape & Reel Dimension
(Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6610). For 1000 parts on 7" reel,
order IRF6610TR1
REEL DIMENSIONS
STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000)
METRIC
IMPERIAL
METRIC
MIN MAX
IMPERIAL
CODE
MIN
MAX
N.C
MIN
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
330.0
20.2
12.8
1.5
MAX
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
A
B
C
D
E
F
12.992
0.795
0.504
0.059
3.937
N.C
177.77
19.06
13.5
1.5
6.9
N.C
0.75
0.53
0.059
2.31
N.C
N.C
N.C
0.520
N.C
12.8
N.C
100.0
N.C
58.72
N.C
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
Loaded Tape Feed Direction
DIMENSIONS
METRIC
MAX
8.10
IMPERIAL
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
MIN
MAX
0.319
0.161
0.484
0.219
0.165
0.205
N.C
MIN
7.90
3.90
11.90
5.45
4.00
5.00
1.50
1.50
A
B
C
D
E
F
0.311
0.154
0.469
0.215
0.158
0.197
0.059
0.059
4.10
12.30
5.55
4.20
5.20
G
H
N.C
1.60
0.063
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/05
www.irf.com
9
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
相关型号：
IRF6610TRPBF
Power Field-Effect Transistor, 15A I(D), 20V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2
INFINEON
IRF6611TRPBF
Power Field-Effect Transistor, 32A I(D), 30V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
INFINEON
IRF6612TR1PBF
Power Field-Effect Transistor, 24A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
INFINEON
©2020 ICPDF网 联系我们和版权申明