IRF6612TR1PBF [INFINEON]
Power Field-Effect Transistor, 24A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3;
| 型号： | IRF6612TR1PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 24A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 开关 脉冲 晶体管 |
| 文件： | 总12页 (文件大小：623K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95842E
IRF6612/IRF6612TR1
DirectFET™ Power MOSFET
VDSS
30V
RDS(on) max
3.3mΩ@VGS = 10V
4.4mΩ@VGS = 4.5V
Qg(typ.)
l RoHS compliant containing no lead or bromide
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
30nC
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with Existing Surface Mount
Techniques
DirectFET ISOMETRIC
MX
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
MX
SQ
SX
ST
MQ
MT
Description
The IRF6612 combines the latest HEXFET® power MOSFET silicon technology with the advanced DirectFETTM packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment
and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the
manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in
power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6612 balances both low resistance and low charge along with ultra low package inductance to reduce both
conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters
that power the latest generation o f processors operating at higher frequencies. The IRF6612 has been optimized for
parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn on
immunity to minimize losses in the synchronous FET socket.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
30
Drain-to-Source Voltage
V
±20
Gate-to-Source Voltage
V
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
136
I
I
I
I
@ TC = 25°C
D
D
D
24
@ TA = 25°C
@ TA = 70°C
A
19
190
DM
2.8
P
P
P
@TA = 25°C
@TA = 70°C
@TC = 25°C
Power Dissipation
D
D
D
1.8
Power Dissipation
W
89
Power Dissipation
0.022
-40 to + 150
Linear Derating Factor
W/°C
°C
T
Operating Junction and
J
Storage Temperature Range
T
STG
Thermal Resistance
Parameter
Junction-to-Ambient
Typ.
–––
12.5
20
Max.
45
Units
RθJA
RθJA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
–––
–––
1.4
RθJA
°C/W
RθJC
–––
1.0
RθJ-PCB
Junction-to-PCB Mounted
–––
Notes through are on page 10
www.irf.com
1
11/17/05
IRF6612/IRF6612TR1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
BVDSS
∆Β
RDS(on)
Drain-to-Source Breakdown Voltage
30
–––
24
–––
V
Reference to 25°C, I = 1mA
∆
V
DSS/ TJ
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
–––
––– mV/°C
D
V
GS = 10V, ID = 24A
2.5
3.3
4.4
mΩ
VGS = 4.5V, ID = 19A
VDS = VGS, ID = 250µA
3.4
VGS(th)
Gate Threshold Voltage
1.35
–––
–––
–––
–––
–––
96
–––
-5.6
–––
–––
–––
2.25
V
∆
∆
VGS(th)/ TJ
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
V
DS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
GS = 20V
IDSS
1.0
100
100
µA
nA
S
V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
VGS = -20V
––– -100
VDS = 15V, ID = 19A
gfs
Qg
–––
30
–––
45
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 15V
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
8.5
2.9
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
GS = 4.5V
Qgs2
Qgd
nC
ID = 19A
Qgodr
8.6
13
Qsw
VDS = 16V, VGS = 0V
Qoss
td(on)
tr
18
nC
ns
V
DD = 16V, VGS = 4.5V
Turn-On Delay Time
15
ID = 19A
Rise Time
52
td(off)
tf
Clamped Inductive Load
Turn-Off Delay Time
21
Fall Time
4.8
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 3970 –––
VDS = 15V
ƒ = 1.0MHz
Output Capacitance
–––
–––
780
360
–––
–––
pF
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
37
Units
mJ
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
19
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
Continuous Source Current
(Body Diode)
–––
–––
110
A
G
ISM
integral reverse
Pulsed Source Current
(Body Diode)
–––
–––
190
p-n junction diode.
VSD
trr
T = 25°C, I = 19A, V = 0V
J S GS
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
19
1.0
29
12
V
T = 25°C, I = 19A
ns
nC
J
F
Qrr
di/dt = 100A/µs
8.1
2
www.irf.com
IRF6612/IRF6612TR1
1000
10000
1000
100
10
VGS
VGS
10V
TOP
10V
TOP
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
BOTTOM
BOTTOM
100
10
1
2.7V
2.7V
60µs PULSE WIDTH
Tj = 150°C
≤
60µs PULSE WIDTH
Tj = 25°C
≤
1
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.5
1000
100
10
V
= 10V
I
= 25A
DS
D
V
= 10V
≤
60µs PULSE WIDTH
GS
1.0
T
= 25°C
J
T
= 150°C
J
1
0.5
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
0
1
2
3
4
5
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
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3
IRF6612/IRF6612TR1
100000
6.0
5.0
4.0
3.0
2.0
1.0
0.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 19A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
V
V
= 24V
= 15V
rss
oss
gd
= C + C
DS
DS
ds
gd
10000
1000
100
C
iss
C
C
oss
rss
1
10
100
0
10
20
30
40
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000.00
100.00
10.00
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
100µsec
1msec
T
= 25°C
J
1
10msec
T
= 25°C
A
Tj = 150°C
Single Pulse
V
GS
= 0V
1.1
0.1
1.00
0
1
10
100
1000
0.4
0.5
V
0.6
0.7
0.8
0.9
1.0
V
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
IRF6612/IRF6612TR1
140
120
100
80
2.5
2.0
I
= 250µA
D
1.5
1.0
0.5
0.0
60
40
20
0
-75 -50 -25
0
25
50
75 100 125 150
25
50
T
75
100
125
150
T , Temperature ( °C )
, Case Temperature (°C)
J
C
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs.
Case Temperature
100
D = 0.50
10
1
0.20
0.10
0.05
0.02
0.01
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
1.2801
8.7256
21.750
13.251
0.000322
0.164798
2.25760
69
τ
τ
J τJ
τ
AτA
1 τ1
τ
τ
τ
0.1
2 τ2
3 τ3
4 τ4
Ci= τi/Ri
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.01
Notes:
1. Duty Factor D= t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRF6612/IRF6612TR1
150
125
100
75
10
I
I
= 24A
D
D
9
8
7
6
5
4
3
2
1
0
TOP
5.3A
6.2A
BOTTOM 19A
T
= 125°C
J
50
T
= 25°C
J
25
0
25
50
75
100
125
150
2
3
4
5
6
7
8
9
10
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy
vs. Drain Current
Current Regulator
Same Type as D.U.T.
V
(BR)DSS
t
15V
p
50KΩ
.2µF
12V
.3µF
DRIVER
+
L
V
DS
+
V
DS
D.U.T.
-
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
2
VGS
Ω
0.01
t
p
I
AS
3mA
I
I
D
G
Current Sampling Resistors
Fig 14. Unclamped Inductive Test Circuit
and Waveform
Fig 15. Gate Charge Test Circuit
LD
VDS
VDS
90%
+
-
VDD
D.U.T
10%
VGS
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
td(on)
td(off)
tr
tf
Fig 16. Switching Time Test Circuit
Fig 17. Switching Time Waveforms
6
www.irf.com
IRF6612/IRF6612TR1
Driver Gate Drive
P.W.
D.U.T
Period
D =
Period
P.W.
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 19. Gate Charge Waveform
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7
IRF6612/IRF6612TR1
DirectFET Outline Dimension, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DIMENSIONS
IMPERIAL
METRIC
MAX MIN
CODE
MIN
MAX
0.250
0.201
0.156
0.018
0.028
0.028
0.056
0.033
0.017
0.039
0.095
0.028
0.003
0.007
6.35
5.05
3.95
0.45
0.72
0.72
1.42
0.84
0.42
0.246
0.189
0.152
0.014
0.027
0.027
0.054
0.032
0.015
A
B
C
D
E
F
6.25
4.80
3.85
0.35
0.68
0.68
1.38
0.80
0.38
0.88
2.28
0.59
0.03
0.08
G
H
J
1.01 0.035
K
L
2.41
0.70
0.08
0.17
0.090
0.023
0.001
0.003
M
N
P
8
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IRF6612/IRF6612TR1
DirectFET Board Footprint, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
S
S
G
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9
IRF6612/IRF6612TR1
DirectFET Tape & Reel Dimension
(Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6612). For 1000 parts on 7" reel,
order IRF6612TR1
REEL DIMENSIONS
STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000)
METRIC IMPERIAL
METRIC
MIN MAX
IMPERIAL
CODE
MIN
MAX
N.C
MIN
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
330.0
20.2
12.8
1.5
MAX
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
A
B
C
D
E
F
12.992
0.795
0.504
0.059
3.937
N.C
6.9
177.77
19.06
13.5
1.5
N.C
0.75
0.53
0.059
2.31
N.C
N.C
N.C
0.520
N.C
12.8
N.C
100.0
N.C
58.72
N.C
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
LOADED TAPE FEED DIRECTION
DIMENSIONS
METRIC
IMPERIAL
MIN
CODE
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
MIN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
A
B
C
D
E
F
G
H
1.60
0.063
10
www.irf.com
IRF6612/IRF6612TR1
DirectFET Part Marking
Notes:
ꢀ Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
TC measured with thermal couple mounted to top (Drain) of
part.
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 0.20mH,
RG = 25Ω, IAS = 19A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in. square Cu board.
R is measured at TJ of approximately 90°C.
θ
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IRs Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/05
www.irf.com
11
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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