IRF6619 [INFINEON]
DirectFET Power MOSFET; DirectFET功率MOSFET
| 型号： | IRF6619 |
| 厂家： | 
Infineon |
| 描述： | DirectFET Power MOSFET |
| 文件： | 总9页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96917
IRF6619
DirectFET Power MOSFET
Typical values (unless otherwise specified)
l Low Profile (<0.7 mm)
VDSS
VGS
RDS(on)
RDS(on)
l Dual Sided Cooling Compatible
1.65mΩ@ 10V 2.2mΩ@ 4.5V
20V max ±20V max
l Ultra Low Package Inductance
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
l Optimized for High Frequency Switching above 1MHz
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction Losses
38nC
13nC
3.5nC
18nC
22nC
2.0V
l Compatible with existing Surface Mount Techniques
MX
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6619 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6619 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6619 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6619 offers particularly low Rds(on) and high
Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Max.
Parameter
Units
VDS
20
Drain-to-Source Voltage
Gate-to-Source Voltage
V
±20
V
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
30
I
I
I
I
@ TA = 25°C
D
D
D
24
@ TA = 70°C
@ TC = 25°C
A
(Package Limited)
150
240
240
Pulsed Drain Current
DM
Single Pulse Avalanche Energy
Avalanche Current
EAS (Thermally limited)
mJ
A
IAR
See Fig. 14, 15, 17a, 17b,
Repetitive Avalanche Energy
EAR
mJ
12
6.0
I = 16A
D
V
= 16V
I
= 30A
DS
VDS= 10V
D
10
8
5.0
4.0
3.0
2.0
6
T
= 125°C
J
4
2
T
= 25°C
J
1.0
2.0
0
4.0
6.0
8.0
10.0
0
20
40
60
80
100
V
, Gate-to-Source Voltage (V)
GS
Fig 1. Typical On-Resistance Vs. Gate Voltage
Q
Total Gate Charge (nC)
G
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Notes:
Limited by TJmax, starting TJ = 25°C, L = 0.86mH, RG = 25Ω, IAS
24A, VGS =10V. Part not recommended for use above this value.
Surface mounted on 1 in. square Cu board, steady state.
=
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Repetitive rating; pulse width limited by max. junction temperature.
TC measured with thermocouple mounted to top (Drain) of part.
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1
2/10/05
IRF6619
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, I = 1mA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
20
–––
–––
–––
1.55
–––
–––
–––
–––
–––
89
–––
14
–––
V
∆ΒVDSS/∆TJ
RDS(on)
––– mV/°C
D
V
GS = 10V, ID = 30A g
VGS = 4.5V, ID = 24A g
DS = VGS, ID = 250µA
mΩ
1.65
2.2
2.2
3.0
V
VGS(th)
Gate Threshold Voltage
–––
-5.8
–––
–––
–––
–––
–––
38
2.45
V
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
VDS = 16V, VGS = 0V
1.0
150
100
-100
–––
57
µA
nA
S
VDS = 16V, VGS = 0V, TJ = 125°C
V
GS = 20V
GS = -20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
V
VDS = 10V, ID = 24A
gfs
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 10V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
10.2
3.5
–––
–––
–––
–––
–––
–––
2.3
VGS = 4.5V
nC
ID = 16A
13.2
11.1
16.7
22
See Fig. 17
VDS = 10V, VGS = 0V
nC
Ω
Gate Resistance
–––
21
VDD = 16V, VGS = 4.5Vꢁg
ID = 24A
td(on)
tr
td(off)
tf
Turn-On Delay Time
–––
–––
–––
–––
Rise Time
71
Clamped Inductive Load
Turn-Off Delay Time
25
ns
Fall Time
9.3
V
GS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 5040 –––
––– 1580 –––
VDS = 10V
Output Capacitance
pF
ƒ = 1.0MHz
Reverse Transfer Capacitance
–––
780
–––
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
IS
MOSFET symbol
Continuous Source Current
(Body Diode)
–––
–––
–––
–––
30
showing the
A
ISM
integral reverse
Pulsed Source Current
(Body Diode)ꢁe
240
p-n junction diode.
TJ = 25°C, IS = 24A, VGS = 0V g
TJ = 25°C, IF = 24A
di/dt = 100A/µs g
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
0.8
29
18
1.0
44
27
V
ns
nC
Qrr
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
ꢀ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF6619
Absolute Maximum Ratings
Max.
Parameter
Units
2.8
P
P
P
@TA = 25°C
@TA = 70°C
@TC = 25°C
Power Dissipation
Power Dissipation
Power Dissipation
W
D
D
D
P
J
1.8
89
270
T
T
T
Peak Soldering Temperature
Operating Junction and
°C
-40 to + 150
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
45
Units
°C/W
W/°C
RθJA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
RθJA
–––
–––
1.4
RθJA
RθJC
–––
1.0
RθJ-PCB
Junction-to-PCB Mounted
Linear Derating Factor
–––
0.017
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.1
0.6784
17.299
17.566
9.4701
0.00086
0.57756
8.94
τ
τ
J τJ
τ
Cτ
τ
1τ1
τ
τ
2τ2
3τ3
4τ4
0.01
0.001
0.0001
Ci= τi/Ri
106
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
TC measured with thermocouple incontact with top (Drain) of part.
Surface mounted on 1 in. square Cu board, steady state.
R is measured at TJ of approximately 90°C.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
θ
Mounted on minimum
Surface mounted on 1 in. square Cu
Mounted to a PCB with a
footprint full size board with
metalized back and with small
clip heatsink (still air)
3
board (still air).
thin gap filler and heat sink.
(still air)
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IRF6619
1000
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
10
1
BOTTOM
BOTTOM
2.5V
2.5V
≤ 60µs PULSE WIDTH
Tj = 150°C
≤ 60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 4. Typical Output Characteristics
Fig 5. Typical Output Characteristics
100.0
1.5
I
= 30A
D
V
= 10V
T
T
T
= 150°C
= 25°C
= -40°C
GS
J
J
J
10.0
1.0
1.0
V
= 10V
DS
≤ 60µs PULSE WIDTH
0.1
0.5
1.5
2.0
2.5
3.0
3.5
4.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig 6. Typical Transfer Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
8000
10
V
C
= 0V,
f = 1 MHZ
GS
T = 25°C
A
= C + C , C SHORTED
iss
gs
gd ds
9
8
7
6
5
4
3
2
1
V
V
V
V
V
V
= 3.0V
= 3.5V
= 4.0V
= 4.5V
= 5.0V
= 10V
GS
GS
GS
GS
GS
GS
C
= C
rss
gd
C
= C + C
6000
4000
2000
0
oss ds
gd
Ciss
Coss
Crss
1
10
100
0
40
80
120
160
200
I
, Drain Current (A)
V
, Drain-to-Source Voltage (V)
D
DS
Fig 9. Typical On-Resistance Vs.
Drain Current and Gate Voltage
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
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IRF6619
1000
100
10
1000.0
100.0
10.0
1.0
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100µsec
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
1msec
10msec
1
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.01
0.10
1.00
10.00
100.00
0.2
0.6
1.0
1.4
1.8
V
, Drain-toSource Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig11. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
180
LIMITED BY PACKAGE
160
140
120
100
80
I
= 250µA
D
60
40
20
0
25
50
T
75
100
125
150
-75 -50 -25
0
25
50
75 100 125 150
, Case Temperature (°C)
C
T
, Junction Temperature ( °C )
J
Fig 13. Typical Threshold Voltage vs. Junction
Fig 12. Maximum Drain Current vs. Case Temperature
Temperature
1000
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
100
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
10
0.01
1
0.05
0.10
0.1
0.01
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
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5
IRF6619
300
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Single Pulse
= 24A
I
D
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 17a, 17b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
200
100
0
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 3)
25
50
75
100
125
150
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
Starting T , Junction Temperature (°C)
J
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
1000
15V
I
D
TOP
12A
15A
24A
DRIVER
+
L
800
600
400
200
0
V
DS
BOTTOM
D.U.T
AS
R
G
V
DD
-
I
A
2
VGS
0.01
t
Ω
p
Fig 17a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
I
AS
Fig 16. Maximum Avalanche Energy Vs. Drain Current
Current Regulator
Fig 17b. Unclamped Inductive Waveforms
Same Type as D.U.T.
LD
VDS
50KΩ
.2µF
12V
+
.3µF
-
VDD
+
V
DS
D.U.T.
-
D.U.T
V
GS
VGS
3mA
Pulse Width < 1µs
Duty Factor < 0.1%
I
I
D
G
Current Sampling Resistors
Fig 19a. Switching Time Test Circuit
Fig 18a. Gate Charge Test Circuit
Id
Vds
VDS
Vgs
90%
Vgs(th)
10%
VGS
td(on)
td(off)
tr
tf
Qgs1
Qgs2
Qgd
Qgodr
Fig 18b. Gate Charge Waveform
Fig 19b. Switching Time Waveforms
6
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IRF6619
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• di/dt controlled by RG
Re-Applied
Voltage
RG
+
-
• Driver same type as D.U.T.
Body Diode
Inductor Current
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 20. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET Substrate and PCB Layout, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
VGS
This includes all recommendations for stencil and substrate designs.
1- Drain
2- Drain
3- Source
4- Source
5- Gate
6- Drain
7- Drain
6
7
1
2
3
5
4
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7
IRF6619
DirectFET Outline Dimension, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DIMENSIONS
IMPERIAL
METRIC
CODE
MAX
MAX
MIN
6.25
4.80
3.85
0.35
0.68
0.68
1.38
0.80
0.38
MAX
0.250
0.201
0.156
0.018
0.028
0.028
0.056
0.033
0.017
0.039
0.095
0.028
0.003
0.007
A
B
C
D
E
F
6.35
5.05
3.95
0.45
0.72
0.72
1.42
0.84
0.42
0.246
0.189
0.152
0.014
0.027
0.027
0.054
0.032
0.015
0.035
0.090
0.023
0.001
0.003
G
H
J
K
L
0.88 1.01
2.28
0.59
0.03
0.08
2.41
0.70
0.08
0.17
M
N
P
DirectFET Part Marking
8
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IRF6619
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6619). For 1000 parts on 7" reel,
order IRF6619TR1
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
METRIC
IMPERIAL
TR1 OPTION (QTY 1000)
METRIC
MIN
MAX
IMPERIAL
MIN
12.992
0.795
0.504
0.059
3.937
N.C
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MAX
N.C
177.77 N.C
0.75
0.53
0.059
2.31
N.C
N.C
19.06
13.5
1.5
N.C
0.520
N.C
12.8
N.C
58.72
N.C
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
0.488
0.469
0.47
0.47
11.9
11.9
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.2/05
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9
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