IRF6620 [INFINEON]
HEXFETPower MOSFET; HEXFETPower MOSFET
| 型号： | IRF6620 |
| 厂家： | 
Infineon |
| 描述： | HEXFETPower MOSFET |
| 文件： | 总8页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95823A
IRF6620
HEXFET® Power MOSFET
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
VDSS
RDS(on) max
Qg(typ.)
2.7mΩ@VGS = 10V
3.6mΩ@VGS = 4.5V
20V
28nC
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with Existing Surface Mount
Techniques
DirectFET ISOMETRIC
MX
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6620 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6620 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6620 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6620 offers particularly low Rds(on) and high
Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Max.
Parameter
Units
VDS
20
Drain-to-Source Voltage
Gate-to-Source Voltage
V
±20
V
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
150
I
I
I
I
@ TC = 25°C
D
D
D
27
@ TA = 25°C
@ TA = 70°C
A
22
220
DM
2.8
P
P
P
@TA = 25°C
@TA = 70°C
@TC = 25°C
Power Dissipation
D
D
D
1.8
Power Dissipation
W
89
39
Power Dissipation
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
22
0.017
Linear Derating Factor
W/°C
°C
-40 to + 150
T
T
Operating Junction and
J
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
45
Units
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
–––
–––
1.4
RθJA
°C/W
RθJC
–––
1.0
RθJ-PCB
Junction-to-PCB Mounted
–––
Notes through are on page 2
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1
4/2/04
IRF6620
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
20
–––
–––
–––
1.55
–––
–––
–––
–––
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
∆ΒVDSS/∆TJ
RDS(on)
16
––– mV/°C Reference to 25°C, ID = 1mA
mΩ
2.1
2.8
–––
-5.8
–––
–––
–––
–––
–––
28
2.7
3.6
VGS = 10V, ID = 27A e
GS = 4.5V, ID = 22A e
VDS = VGS, ID = 250µA
V
VGS(th)
Gate Threshold Voltage
2.45
V
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
1.0
150
100
-100
–––
42
µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA VGS = 20V
VGS = -20V
gfs
S
VDS = 10V, ID = 22A
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
td(on)
tr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
9.5
3.5
8.8
6.2
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 10V
nC VGS = 4.5V
ID = 22A
See Fig. 17
16
nC
VDS = 10V, VGS = 0V
Turn-On Delay Time
18
VDD = 16V, VGS = 4.5Vꢀe
Rise Time
80
ID = 22A
td(off)
tf
Turn-Off Delay Time
20
ns Clamped Inductive Load
Fall Time
6.6
Ciss
Coss
Crss
Input Capacitance
––– 4130 –––
––– 1160 –––
V
GS = 0V
Output Capacitance
pF VDS = 10V
ƒ = 1.0MHz
Reverse Transfer Capacitance
–––
560
–––
Diode Characteristics
Parameter
Continuous Source Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
IS
–––
–––
3.5
D
(Body Diode)
A
showing the
G
ISM
Pulsed Source Current
(Body Diode)ꢀc
–––
–––
220
integral reverse
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
0.8
23
13
1.0
35
20
V
TJ = 25°C, IS = 22A, VGS = 0V e
ns TJ = 25°C, IF = 22A
Qrr
di/dt = 100A/µs
e
nC
Notes:
ꢁ Used double sided cooling, mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
TC measured with thermal couple mounted to top (Drain) of
part.
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 0.16mH,
RG = 25Ω, IAS = 22A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in. square Cu board.
R is measured at TJ of approximately 90°C.
θ
2
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IRF6620
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
BOTTOM
BOTTOM
2.7V
2.7V
1
≤
≤
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 25°C
Tj = 150°C
0.1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.5
1.0
0.5
1000.0
I
= 27A
D
V
= 10V
GS
100.0
10.0
1.0
T
= 150°C
J
T
= 25°C
J
V
= 10V
DS
≤
60µs PULSE WIDTH
0.1
2.5
3.0
3.5
4.0
4.5
5.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
12
100000
10000
1000
V
= 0V,
= C
f = 1 MHZ
GS
I
= 20A
D
V
= 20V
C
C
C
+ C , C
SHORTED
DS
VDS= 10V
iss
gs
gd
ds
10
8
= C
rss
oss
gd
= C + C
ds
gd
Ciss
6
Coss
Crss
4
2
0
100
0
20
40
60
80
1
10
, Drain-to-Source Voltage (V)
100
Q
Total Gate Charge (nC)
G
V
DS
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRF6620
1000.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100.0
T
= 150°C
J
10.0
1.0
100µsec
1
T
= 25°C
V
J
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
= 0V
GS
0.1
0.1
0
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
V
, Drain-toSource Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
150
2.5
2.0
1.5
1.0
120
90
60
30
0
I
= 250µA
D
25
50
75
100
125
150
-75 -50 -25
0
25
50
75 100 125 150
T
J
, Junction Temperature (°C)
T
, Temperature ( °C )
J
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs. Case Temperature
100
D = 0.50
10
1
0.20
0.10
0.05
0.02
0.01
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
1.28011 0.000322
τ
τ
J τJ
Cτ
8.72556 0.164798
0.1
τ
1τ1
τ
τ
τ
2τ2
3τ3
4τ4
21.75
2.2576
69
Ci= τi/Ri
13.251
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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IRF6620
12
10
8
160
120
80
40
0
I
= 27A
I
D
D
TOP
7.2A
8.4A
22A
BOTTOM
6
T
= 125°C
J
4
2
T
= 25°C
J
0
2.0
4.0
6.0
8.0
10.0
25
50
75
100
125
150
V
, Gate-to-Source Voltage (V)
GS
Starting T , Junction Temperature (°C)
J
Fig 12. On-Resistance Vs. Gate Voltage
Fig 13c. Maximum Avalanche Energy Vs. Drain Current
15V
LD
VDS
DRIVER
+
L
V
DS
+
-
VDD
D.U.T
AS
R
G
V
DD
-
D.U.T
I
A
V
GS
VGS
0.01Ω
t
p
Pulse Width < 1µs
Duty Factor < 0.1%
Fig 13a. Unclamped Inductive Test Circuit
Fig 14a. Switching Time Test Circuit
VDS
V
(BR)DSS
t
p
90%
10%
VGS
td(on)
td(off)
tr
tf
I
AS
Fig 14b. Switching Time Waveforms
Fig 13b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Id
Vds
50KΩ
Vgs
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
V
GS
Vgs(th)
3mA
I
I
D
G
Current Sampling Resistors
Qgs1
Qgs2
Qgd
Qgodr
Fig 15. Gate Charge Test Circuit
Fig 16. Gate Charge Waveform
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5
IRF6620
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
V
=10V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
-
• Low Leakage Inductance
Current Transformer
D.U.T. I Waveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
-
+
di/dt
-
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• di/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Re-Applied
Voltage
RG
+
-
Body Diode
Inductor Current
Forward Drop
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET Substrate and PCB Layout, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
1- Drain
2- Drain
3- Source
4- Source
5- Gate
6- Drain
7- Drain
6
7
1
3
4
5
2
6
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IRF6620
DirectFET Outline Dimension, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DIMENSIONS
IMPERIAL
MIN
6.35 0.246
METRIC
MAX
CODE
MIN
6.25
4.80
3.85
0.35
0.68
0.68
1.38
0.80
0.38
0.88
2.28
0.59
0.03
MAX
0.250
0.201
0.156
0.018
0.028
0.028
0.056
0.033
0.017
0.039
0.095
0.028
0.003
A
B
C
D
E
F
5.05
3.95
0.189
0.152
Note: Controlling dimensions
are in mm
0.45 0.014
0.72
0.72
0.027
0.027
1.42 0.054
0.84
0.42 0.015
G
H
J
0.032
1.01
2.41
K
L
0.035
0.090
0.70 0.023
0.08
M
N
0.001
DirectFET Part Marking
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7
IRF6620
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6618). For 1000 parts on 7" reel,
order IRF6618TR1
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
METRIC
MAX
IMPERIAL
METRIC
MIN MAX
IMPERIAL
CODE
MIN
MAX
N.C
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
A
B
C
D
E
F
12.992
0.795
0.504
0.059
3.937
N.C
330.0
20.2
12.8
1.5
177.77
19.06
13.5
1.5
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
N.C
0.75
0.53
0.059
2.31
N.C
N.C
N.C
0.520
N.C
12.8
N.C
100.0
N.C
58.72
N.C
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.4/04
8
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