IRF6621TR1PBF [INFINEON]
DirectFETPower MOSFET ; ??的DirectFET功率MOSFET ？
| 型号： | IRF6621TR1PBF |
| 厂家： | 
Infineon |
| 描述： | DirectFETPower MOSFET |
| 文件： | 总10页 (文件大小：266K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97093
IRF6621PbF
IRF6621TRPbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
l RoHS Compliant
VDSS
VGS
RDS(on)
RDS(on)
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
7.0mΩ@ 10V 9.3mΩ@ 4.5V
30V max ±20V max
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses and Switching Losses
l Low Profile (<0.7mm)
11.7nC 4.2nC 1.0nC
10nC
6.9nC
1.8V
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
DirectFET ISOMETRIC
SQ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6621PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6621PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6621PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Max.
30
Parameter
Units
V
VDS
Drain-to-Source Voltage
±20
12
V
Gate-to-Source Voltage
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
9.6
55
@ TA = 70°C
@ TC = 25°C
A
96
DM
EAS
IAR
13
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
9.6
25
20
15
10
5
12
10
8
I = 9.6A
D
V
= 24V
I
= 12A
DS
D
VDS= 15V
6
T
= 125°C
J
4
2
T
= 25°C
J
0
2.0
4.0
6.0
8.0
10.0
0
4
8
12
16
20
24
28
V
, Gate-to-Source Voltage (V)
GS
Fig 1. Typical On-Resistance Vs. Gate Voltage
Q
Total Gate Charge (nC)
G
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Notes:
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.29mH, RG = 25Ω, IAS = 9.6A.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
1
5/24/06
IRF6621PbF
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, I = 1mA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
31
–––
24
–––
V
∆ΒVDSS/∆TJ
RDS(on)
––– mV/°C
D
VGS = 10V, ID = 12A i
VGS = 4.5V, ID = 9.6A i
VDS = VGS, ID = 250µA
mΩ
7.0
9.1
9.3
12.1
2.25
VGS(th)
Gate Threshold Voltage
1.8
V
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
-5.1
–––
–––
–––
–––
–––
––– mV/°C
VDS = 24V, VGS = 0V
DS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
GS = -20V
VDS = 15V, ID = 9.6A
1.0
150
100
-100
–––
µA
nA
S
V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
V
gfs
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11.7 17.5
VDS = 15V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
3.3
1.0
4.2
3.2
5.2
6.9
2.0
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VGS = 4.5V
ID = 9.6A
nC
See Fig. 15
VDS = 15V, VGS = 0V
nC
Ω
Gate Resistance
VDD = 15V, VGS = 4.5Vꢁi
ID = 9.6A
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
14
Clamped Inductive Load
Turn-Off Delay Time
16
ns
Fall Time
4.1
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 1460 –––
VDS = 15V
Output Capacitance
–––
–––
310
170
–––
–––
pF
ƒ = 1.0MHz
Reverse Transfer Capacitance
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
IS
MOSFET symbol
Continuous Source Current
(Body Diode)
–––
–––
53
showing the
A
ISM
integral reverse
Pulsed Source Current
(Body Diode)ꢁg
–––
–––
96
p-n junction diode.
TJ = 25°C, IS = 9.6A, VGS = 0V i
TJ = 25°C, IF = 9.6A
di/dt = 420A/µs i
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
0.8
9.8
10
1.0
15
15
V
ns
nC
Qrr
Notes:
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF6621PbF
Absolute Maximum Ratings
Max.
2.2
Parameter
Units
W
P
P
P
@TA = 25°C
@TA = 70°C
@TC = 25°C
Power Dissipation
Power Dissipation
Power Dissipation
D
D
D
P
J
1.4
42
270
T
T
T
Peak Soldering Temperature
Operating Junction and
°C
-40 to + 150
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
58
Units
°C/W
W/°C
RθJA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
RθJA
–––
–––
3.0
RθJA
RθJC
–––
1.0
RθJ-PCB
Junction-to-PCB Mounted
Linear Derating Factor
–––
0.017
100
10
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
R5
R5
Ri (°C/W) τi (sec)
0.02
0.01
τ
τ
J τJ
τ
A
Cτ
1.6195
2.1406
0.000126
0.001354
1
τ
1τ1
τ
τ
τ
2 τ2
3τ3
4τ4
5τ5
22.2887 0.375850
20.0457 7.410000
Ci= τi/Ri
Ci= τi/Ri
0.1
11.9144
99
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple incontact with top (Drain) of part.
Used double sided cooling, mounting pad with large heatsink.
R is measured at TJ of approximately 90°C.
θ
Mounted on minimum
Mounted to a PCB with
small clip heatsink (still air)
Surface mounted on 1 in. square Cu
board (still air).
footprint full size board with
metalized back and with small
clip heatsink (still air)
www.irf.com
3
IRF6621PbF
1000
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
10
1
BOTTOM
BOTTOM
2.5V
≤60µs PULSE WIDTH
Tj = 25°C
≤60µs PULSE WIDTH
Tj = 150°C
2.5V
0.1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
DS
, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
Fig 5. Typical Output Characteristics
1000
1.5
1.0
0.5
I
= 12A
D
VGS = 4.5V
= 10V
V
100
10
1
GS
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
V
= 15V
DS
≤60µs PULSE WIDTH
0.1
1.5
2.0
V
2.5
3.0
3.5
4.0
4.5
5.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
, Junction Temperature (°C)
J
, Gate-to-Source Voltage (V)
GS
Fig 7. Normalized On-Resistance vs. Temperature
Fig 6. Typical Transfer Characteristics
20
10000
V
C
= 0V,
f = 1 MHZ
GS
T
= 25°C
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
J
= C + C , C SHORTED
iss
gs
gd ds
C
= C
rss
gd
C
= C + C
oss
ds
gd
16
12
8
C
iss
1000
C
oss
C
rss
4
100
0
20
40
60
80
100
1
10
100
V
, Drain-to-Source Voltage (V)
DS
I , Drain Current (A)
Fig 9. TyDpical On-Resistance Vs.
Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
Drain Current and Gate Voltage
4
www.irf.com
IRF6621PbF
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
100µsec
1msec
10msec
1
0.1
0.01
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
GS
1.2
1
0.1
1.0
10.0
100.0
0.4
0.6
0.8
1.0
1.4
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig11. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
60
50
40
30
20
10
0
I
= 250µA
D
-75 -50 -25
0
25
50
75 100 125 150
25
50
75
100
125
150
T , Junction Temperature ( °C )
J
T , Case Temperature (°C)
C
Fig 13. Typical Threshold Voltage vs. Junction
Fig 12. Maximum Drain Current vs. Case Temperature
Temperature
60
I
D
TOP
BOTTOM
3.0A
4.3A
9.6A
50
40
30
20
10
0
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy Vs. Drain Current
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5
IRF6621PbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
VGS
R
G
V
DD
-
I
A
20V
0.01
Ω
t
p
I
AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
LD
VDS
VDS
90%
+
-
VDD
10%
VGS
D.U.T
VGS
td(on)
td(off)
tr
Pulse Width < 1µs
Duty Factor < 0.1%
tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
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IRF6621PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• di/dt controlled by RG
Re-Applied
Voltage
RG
+
-
• Driver same type as D.U.T.
Body Diode
Inductor Current
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET Substrate and PCB Layout, SQ Outline
(Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
G
S
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7
IRF6621PbF
DirectFET Outline Dimension, SQ Outline
(Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DIMENSIONS
IMPERIAL
METRIC
MAX MIN
CODE
MIN
MAX
0.191
0.156
0.112
0.018
0.020
0.032
0.036
0.032
0.038
0.083
0.0274
0.0031
0.007
4.85
3.95
2.85
A
B
C
D
E
F
0.187
0.146
0.108
4.75
3.70
2.75
0.35
0.48
0.78
0.88
0.78
0.93
2.00
0.616
0.020
0.08
0.45 0.014
0.52
0.82
0.92
0.82
0.97
2.10
0.676
0.080
0.17
0.019
0.031
0.035
0.031
0.037
0.079
0.0235
0.0008
0.003
G
H
K
L
M
R
P
DirectFET Part Marking
8
www.irf.com
IRF6621PbF
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6621TRPBF). For 1000 parts on 7"
reel, order IRF6621TR1PBF
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
METRIC
MAX
IMPERIAL
METRIC
MAX
IMPERIAL
CODE
MIN
MIN
MAX
N.C
MIN
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
A
B
C
D
E
F
12.992
0.795
0.504
0.059
3.937
N.C
330.0
20.2
12.8
1.5
177.77
19.06
13.5
1.5
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
N.C
0.75
0.53
0.059
2.31
N.C
N.C
N.C
0.520
N.C
12.8
N.C
100.0
N.C
58.72
N.C
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
Loaded Tape Feed Direction
DIMENSIONS
METRIC
IMPERIAL
CODE
MIN
7.90
3.90
11.90
5.45
4.00
5.00
1.50
1.50
MIN
MAX
0.319
0.161
0.484
0.219
0.165
0.205
N.C
MAX
8.10
4.10
12.30
5.55
4.20
5.20
N.C
A
B
C
D
E
F
0.311
0.154
0.469
0.215
0.158
0.197
0.059
0.059
G
H
1.60
0.063
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/06
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9
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
相关型号：
IRF6623TR1PBF
Power Field-Effect Transistor, 16A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
INFINEON
IRF6623TRPBF
Power Field-Effect Transistor, 16A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
INFINEON
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