IRF6635TR1PBF [INFINEON]
Compatible with existing Surface Mount Techniques;
| 型号： | IRF6635TR1PBF |
| 厂家： | 
Infineon |
| 描述： | Compatible with existing Surface Mount Techniques |
| 文件： | 总10页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97086
IRF6635PbF
IRF6635TRPbF
DirectFET Power MOSFET
l RoHs Compliant
Typical values (unless otherwise specified)
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max
1.3mΩ@ 10V 1.8mΩ@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
l High Cdv/dt Immunity
47nC
17nC
4.7nC
48nC
29nC
1.8V
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
DirectFET ISOMETRIC
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6635PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,
improving previous best thermal resistance by 80%.
The IRF6635PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package
inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/
high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The
IRF6635PbF has been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets.
Absolute Maximum Ratings
Max.
30
Parameter
Units
V
VDS
Drain-to-Source Voltage
±20
32
Gate-to-Source Voltage
V
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
25
A
@ TA = 70°C
@ TC = 25°C
180
250
200
25
DM
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
10
8
6.0
5.0
4.0
3.0
2.0
1.0
0.0
I = 25A
D
I
= 32A
V
= 24V
= 15V
D
DS
V
DS
6
4
T
= 125°C
J
2
T
3
= 25°C
4
J
0
0
1
2
5
6
7
8
9
10
0
10
20
30
40
50
60
Q
Total Gate Charge (nC)
G
V
Gate -to -Source Voltage (V)
GS,
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
Notes:
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.63mH, RG = 25Ω, IAS = 25A.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
1
5/3/06
IRF6635PbF
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250µA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
45
–––
24
–––
V
Reference to 25°C, I = 1mA
∆ΒVDSS/∆TJ
RDS(on)
––– mV/°C
D
VGS = 10V, ID = 32A i
VGS = 4.5V, ID = 25A i
VDS = VGS, ID = 250µA
mΩ
1.3
1.8
1.8
-6.1
–––
–––
–––
–––
–––
47
1.8
2.4
VGS(th)
Gate Threshold Voltage
2.35
V
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
VDS = 24V, VGS = 0V
1.0
150
100
-100
–––
71
µA
nA
S
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
VGS = -20V
VDS = 15V, ID = 25A
gfs
Qg
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 15V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
12
–––
–––
VGS = 4.5V
ID = 25A
4.7
17
nC
13
–––
–––
–––
–––
–––
–––
–––
–––
See Fig. 15
22
VDS = 16V, VGS = 0V
29
nC
Ω
Gate Resistance
1.0
21
VDD = 16V, VGS = 4.5Vꢁi
td(on)
tr
td(off)
tf
Turn-On Delay Time
–––
–––
–––
–––
ID = 25A
Rise Time
13
Clamped Inductive Load
See Fig. 16 & 17
Turn-Off Delay Time
33
ns
Fall Time
8.3
V
GS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 5970 –––
––– 1280 –––
VDS = 15V
Output Capacitance
pF
ƒ = 1.0MHz
Reverse Transfer Capacitance
–––
600
–––
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
IS
MOSFET symbol
Continuous Source Current
(Body Diode)
–––
–––
–––
–––
110
250
showing the
A
ISM
integral reverse
Pulsed Source Current
(Body Diode)ꢁg
p-n junction diode.
TJ = 25°C, IS = 25A, VGS = 0V i
TJ = 25°C, IF = 25A
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
20
1.0
30
72
V
ns
nC
Qrr
di/dt = 500A/µs iꢁꢁSee Fig. 18
48
Notes:
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
www.irf.com
IRF6635PbF
Absolute Maximum Ratings
Max.
2.8
Parameter
Units
W
P
P
P
@TA = 25°C
@TA = 70°C
@TC = 25°C
Power Dissipation
Power Dissipation
Power Dissipation
D
D
D
P
J
1.8
89
270
T
T
T
Peak Soldering Temperature
Operating Junction and
°C
-40 to + 150
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
45
Units
°C/W
W/°C
RθJA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
RθJA
–––
–––
1.4
RθJA
RθJC
–––
1.0
RθJ-PCB
Junction-to-PCB Mounted
Linear Derating Factor
–––
0.022
100
10
D = 0.50
0.20
0.10
0.05
1
0.02
0.01
R1
R1
R2
R2
R3
R4
Ri (°C/W) τi (sec)
R3
R4
τ
0.6784
17.299
17.566
9.4701
0.001268
0.033387
0.508924
11.19309
τ
J τJ
AτA
τ
1 τ1
0.1
0.01
τ
τ
τ
2 τ2
3 τ3
4 τ4
Ci= τi/Ri
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
R is measured at TJ of approximately 90°C.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
θ
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
Mounted to a PCB with
small clip heatsink (still air)
Surface mounted on 1 in. square Cu
(still air).
www.irf.com
3
IRF6635PbF
1000
1000
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
10
BOTTOM
BOTTOM
100
2.5V
2.5V
60µs PULSE WIDTH
Tj = 25°C
≤
60µs PULSE WIDTH
Tj = 150°C
≤
10
1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 4. Typical Output Characteristics
Fig 5. Typical Output Characteristics
1000
100
10
1.5
V
= 15V
I
= 32A
D
DS
≤
60µs PULSE WIDTH
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
1.0
0.5
V
V
= 4.5V
= 10V
GS
GS
1
0.1
1
2
3
4
-60 -40 -20
0
20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 7. Normalized On-Resistance vs. Temperature
Fig 6. Typical Transfer Characteristics
30
100000
10000
1000
V
= 0V,
= C
f = 1 MHZ
GS
T
= 25°C
J
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
25
20
15
10
5
rss
oss
gd
Vgs = 3.0V
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
= C + C
ds
gd
C
iss
C
oss
C
rss
0
100
20
60
100
140
180
220
260
1
10
, Drain-to-Source Voltage (V)
100
V
DS
I , Drain Current (A)
D
Fig 9. Normalized Typical On-Resistance vs.
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Drain Current and Gate Voltage
4
www.irf.com
IRF6635PbF
1000
100
10
1000
100
10
1
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100µsec
10msec
1msec
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
100msec
1
T
= 25°C
A
T = 150°C
J
V
= 0V
GS
Single Pulse
0.1
0
0.01
0.10
1.00
10.00
100.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
V
DS
SD
Fig11. Maximum Safe Operating Area
Fig 10. Typical Source-Drain Diode Forward Voltage
2.2
200
175
150
125
100
75
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 250µA
D
50
25
0
-75 -50 -25
0
25 50 75 100 125 150
25
50
T
75
100
125
150
T
, Temperature ( °C )
J
, Case Temperature (°C)
C
Fig 13. Threshold Voltage vs. Temperature
Fig 12. Maximum Drain Current vs. Case Temperature
900
800
700
600
500
400
300
200
100
0
I
D
TOP
9.1A
11A
BOTTOM 25A
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy vs. Drain Current
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5
IRF6635PbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V
(BR)DSS
15V
t
p
DRIVER
L
V
DS
D.U.T
AS
VGS
R
G
+
-
V
DD
I
A
20V
0.01
Ω
t
p
I
AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
LD
VDS
VDS
90%
+
-
VDD
10%
VGS
D.U.T
VGS
td(on)
td(off)
tr
Pulse Width < 1µs
Duty Factor < 0.1%
tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
www.irf.com
IRF6635PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
•
di/dt controlled by RG
• Driver same type as D.U.T.
Re-Applied
Voltage
RG
+
-
Body Diode
Inductor Current
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET Substrate and PCB Layout, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
S
S
G
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7
IRF6635PbF
DirectFET Outline Dimension, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DIMENSIONS
IMPERIAL
METRIC
MIN
CODE MIN
MAX
6.35
5.05
3.95
0.45
0.72
0.72
1.42
0.84
0.42
1.01
2.41
MAX
0.250
0.201
0.156
0.018
0.028
0.028
0.056
0.033
0.017
0.039
0.095
0.0274
0.0031
0.007
A
B
C
D
E
F
0.246
0.189
0.152
0.014
0.027
0.027
0.054
0.032
0.015
0.035
0.090
0.0235
0.0008
0.003
6.25
4.80
3.85
0.35
0.68
0.68
1.38
0.80
0.38
0.88
2.28
G
H
J
K
L
M
R
P
0.616 0.676
0.020 0.080
0.08
0.17
DirectFET Part Marking
8
www.irf.com
IRF6635PbF
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6635TRPBF). For 1000 parts on 7"
reel, order IRF6635TR1PBF
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
METRIC
MAX
IMPERIAL
METRIC
MIN MAX
IMPERIAL
CODE
MIN
12.992
0.795
0.504
0.059
3.937
N.C
MAX
N.C
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
A
B
C
D
E
F
330.0
20.2
12.8
1.5
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
177.77 N.C
0.75
0.53
0.059
2.31
N.C
N.C
19.06
13.5
1.5
N.C
0.520
N.C
12.8
N.C
100.0
N.C
N.C
58.72
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
LOADED TAPE FEED DIRECTION
DIMENSIONS
METRIC
IMPERIAL
CODE
MIN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
MIN
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
A
B
C
D
E
F
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
G
H
1.60
0.063
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/06
www.irf.com
9
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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