IRF6643PBF_15 [INFINEON]
Latest MOSFET silicon technology;
| 型号： | IRF6643PBF_15 |
| 厂家： | 
Infineon |
| 描述： | Latest MOSFET silicon technology |
| 文件： | 总9页 (文件大小：437K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIGITAL AUDIO MOSFET
IRF6643TRPbF
Key Parameters
Features
• Latest MOSFET silicon technology
• Key parameters optimized for Class-D audio amplifier
applications
• Low RDS(on) for improved efficiency
• Low Qg for better THD and improved efficiency
• Low Qrr for better THD and lower EMI
• Low package stray inductance for reduced ringing and lower
EMI
VDS
150
V
R
DS(ON) typ. @ VGS = 10V
29
39
mΩ
nC
Qg typ.
R
G(int) typ.
0.9
Ω
• Can deliver up to 200 W per channel into 8Ω load in half-bridge
configuration amplifier
• Dual sided cooling compatible
• Compatible with existing surface mount technologies
• RoHS compliant, halogen-free
• Lead-free (qualified up to 260°C reflow)
MZ
Applicable DirectFET Outline and Substrate Outline (see p.6, 7 for details)
SH
SJ
ST
SH
MQ
MX
MT
MN
MZ
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and
internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.
The IRF6643PbF device utilizes DirectFET® packaging technology. DirectFET® packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET® package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFET® package
also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation.
These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Tape and Reel
Quantity
4800
IRF6643TRPbF
DirectFET Medium Can
IRF6643TRPbF
Absolute Maximum Ratings
Parameter
Gate-to-Source Voltage
Max.
±20
Units
V
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
35
6.2
5.0
A
76
PD @TC = 25°C
PD @TA = 25°C
PD @TA = 70°C
EAS
89
2.8
Power Dissipation
W
Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
1.8
50
mJ
A
IAR
7.6
Linear Derating Factor
0.022
-40 to + 150
W/°C
°C
TJ
Operating Junction and
TSTG
Storage Temperature Range
Notes through are on page 9
1
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© 2013 International Rectifier
May 31, 2013
IRF6643TRPbF
Thermal Resistance
Parameter
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
Units
RθJA
RθJA
RθJA
RθJC
°C/W
–––
RθJ-PCB
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
150
–––
–––
3.0
Typ.
–––
0.18
29
Max. Units
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
–––
34.5
4.9
V
V/°C Reference to 25°C, ID = 1.0mA
ΔBVDSS/ΔTJ
RDS(on)
VGS(th)
VGS = 10V, ID = 7.6A
VDS = VGS, ID = 150µA
mΩ
V
4.0
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
-11
––– mV/°C
ΔVGS(th)
IDSS
–––
20
µA VDS = 150V, VGS = 0V
–––
–––
–––
–––
–––
–––
–––
0.8
250
100
-100
–––
VDS = 120V, VGS = 0V, TJ=125°C
IGSS
RG
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
VGS = 20V
GS = -20V
nA
V
Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Forward Transconductance
Total Gate Charge
Pre-VthGate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
16
–––
39
9.6
2.2
11
–––
55
–––
–––
17
S
VDS = 10V, ID = 7.6A
–––
–––
–––
–––
–––
VDS = 75V
GS = 10V
V
nC ID = 7.6A
Gate Charge Overdrive
16
–––
Qsw
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Switch Charge (Qgs2 + Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
13
9.2
5.0
13
4.4
2340
300
61
–––
–––
–––
–––
–––
–––
–––
–––
–––
ns
VDD = 75V, VGS = 10V
ID = 7.6A
VGS = 0V
V
DS = 25V
pF ƒ = 1.0MHz
VGS=0V, VDS=1.0V, ƒ=1.0MHz
1950
Coss
Output Capacitance
–––
140
–––
VGS=0V, VDS=80V, ƒ=1.0MHz
Diode Characteristics
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max. Units
Conditions
MOSFET symbol
D
IS
–––
–––
58
showing the
G
A
integral reverse
p-n junction diode.
ISM
S
–––
–––
76
VSD
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
67
190
1.3
100
280
V
TJ = 25°C, IS = 7.6A, VGS = 0V
ns TJ = 25°C, IF = 7.6A,VDD = 50V
di/dt = 100A/µs
nC
2
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© 2013 International Rectifier
May 31, 2013
IRF6643TRPbF
100
10
1
100
10
1
VGS
15V
10V
8.0V
7.0V
TOP
7.0V
7.0V
BOTTOM
VGS
15V
TOP
10V
8.0V
7.0V
BOTTOM
60µs PULSE WIDTH
≤
Tj = 150°C
60µs PULSE WIDTH
≤
Tj = 25°C
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
10
1
2.5
2.0
1.5
1.0
0.5
I
= 7.6A
D
V
= 10V
T
T
T
= 150°C
= 25°C
= -40°C
GS
J
J
J
V
= 10V
DS
≤60µs PULSE WIDTH
0.1
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
4.0
5.0
6.0
7.0
8.0
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
12
100000
10000
1000
100
V
C
= 0V,
f = 1 MHZ
GS
I = 7.6A
D
= C + C , C SHORTED
iss
gs
gd ds
10
C
C
= C
rss
oss
gd
V
V
V
= 120V
= 75V
= 30V
DS
DS
DS
= C + C
ds
gd
8
6
4
2
0
C
iss
C
oss
C
rss
10
1
10
100
0
10
20
30
40
V
, Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs Gate-to-Source Voltage
3
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© 2013 International Rectifier
May 31, 2013
IRF6643TRPbF
1000
100
10
100
10
1
OPERATION IN THIS AREA
LIMITED BY R (on)
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
DS
100µsec
1msec
1
T
= 25°C
A
Tj = 150°C
Single Pulse
10msec
V
= 0V
GS
1.6
0.1
0.1
0.0
0.4
0.8
1.2
2.0
0.1
1.0
10.0
100.0
1000.0
V
, Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
5.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
4.5
4.0
3.5
I
I
= 250µA
= 150µA
D
D
3.0
2.5
2.0
-75 -50 -25
0
25
50
75 100 125 150
25
50
T
75
100
125
150
T
, Temperature ( °C )
J
, Ambient Temperature (°C)
J
Fig 10. Typical Threshold Voltage vs.
Fig 9. Maximum Drain Current vs. Ambient Temperature
Junction Temperature
100
D = 0.50
10
0.20
0.10
0.05
1
0.1
0.02
0.01
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x Zthja + Ta
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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© 2013 International Rectifier
May 31, 2013
IRF6643TRPbF
70
60
50
40
30
20
45
40
35
30
25
T = 25°C
I
= 7.6A
J
D
V
V
V
V
= 7.0V
= 8.0V
= 10V
= 15V
GS
GS
GS
GS
T
= 125°C
J
T
= 25°C
J
0
10
20
30
40
50
4
6
8
10
12
14
16
I
, Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 12. Typical On-Resistance vs. Gate Voltage
Fig 13. Typical On-Resistance vs. Drain Current
200
I
D
TOP
1.5A
3.0A
15A
15V
160
120
80
40
0
BOTTOM
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
Ω
t
p
Fig 15a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
V
(BR)DSS
Starting T , Junction Temperature (°C)
J
t
p
Fig 14. Maximum Avalanche Energy vs. Drain Current
I
AS
Fig 15b. Unclamped Inductive Waveforms
Fig 16b. Switching Time Waveforms
May 31, 2013
Fig 16a. Switching Time Test Circuit
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5
IRF6643TRPbF
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 17a. Gate Charge Test Circuit
Fig 17b. Gate Charge Waveform
Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
6
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© 2013 International Rectifier
May 31, 2013
IRF6643TRPbF
DirectFET® Substrate and PCB Layout, MZ Outline
(Medium Size Can, Z-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
7
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© 2013 International Rectifier
May 31, 2013
IRF6643TRPbF
DirectFET® Outline Dimension, MZ Outline
(Medium Size Can, D-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all
recommendations for stencil and substrate designs.
DIMENSIONS
IMPERIAL
METRIC
CODE
MAX
6.35
MAX
MIN
6.25
MAX
0.250
0.201
0.156
0.018
0.028
0.028
0.038
0.026
0.013
0.050
0.105
0.0274
0.0031
0.007
A
B
C
D
E
F
0.246
0.189
0.152
0.014
0.027
0.027
0.037
0.025
0.011
0.044
0.100
0.0235
0.0008
0.003
4.80 5.05
3.85
0.35
0.68
0.68
0.93
0.63
0.28
1.13
2.53
3.95
0.45
0.72
0.72
0.97
0.67
0.32
1.26
2.66
G
H
J
K
L
M
R
P
0.616 0.676
0.020 0.080
0.08
0.17
DirectFET® Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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© 2013 International Rectifier
May 31, 2013
IRF6643TRPbF
DirectFET® Tape & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6643TRPBF). For 1000 parts on 7"
reel, order IRF6643TR1PBF
DIMENSIONS
METRIC
IMPERIAL
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
MIN
0.311
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
MIN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
MAX
REEL DIMENSIONS
A
B
C
D
E
F
8.10
4.10
12.30
5.55
5.30
6.70
N.C
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
0.154
0.469
0.215
0.201
0.256
0.059
0.059
METRIC
MAX
IMPERIAL
METRIC
MIN
MAX
IMPERIAL
CODE
MIN
MAX
N.C
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
A
B
C
D
E
F
12.992
0.795
0.504
0.059
3.937
N.C
330.0
20.2
12.8
1.5
177.77
19.06
13.5
1.5
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
N.C
0.75
0.53
0.059
2.31
N.C
N.C
N.C
G
H
0.520
N.C
12.8
N.C
1.60
0.063
100.0
N.C
58.72
N.C
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification Information†
MSL1
DirectFET
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC J-STD-020D††)
Yes
†
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Notes:
Used double sided cooling , mounting pad with large heatsink.
Mounted on minimum footprint full size board with
metalized back and with small clip heatsink.
TC measured with thermal couple mounted to top
(Drain) of part.
Repetitive rating; pulse width limited by max. junction
temperature.
Starting TJ = 25°C, L = 0.43mH, RG = 25Ω, IAS = 7.6A.
Surface mounted on 1 in. square Cu board.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Rθ is measured at TJ of approximately 90°C.
Coss eff. is a fixed capacitance that gives the same charging
time as Coss while VDS is rising from 0 to 80% VDSS
.
Revision History
Date
Comments
Converted the data sheet to Class-D Audio formatting template. No change in electrical
parameters.
05/30/2013
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
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© 2013 International Rectifier
May 31, 2013
相关型号：
IRF6644TR1
Power Field-Effect Transistor, 10.3A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3
INFINEON
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