IRF6645PBF_15 [INFINEON]
Application Specific MOSFETs;
| 型号： | IRF6645PBF_15 |
| 厂家： | 
Infineon |
| 描述： | Application Specific MOSFETs |
| 文件： | 总9页 (文件大小：239K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF6645PbF
IRF6645TRPbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
l RoHS Compliant, Halogen-Free
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
VDSS
VGS
RDS(on)
28mΩ@ 10V
Vgs(th)
100V max ±20V max
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
Qg tot
Qgd
14nC
4.8nC
4.0V
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
DirectFET ISOMETRIC
SJ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SH
SJ
SP
MZ
MN
Description
The IRF6645PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling
to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6645PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom
applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device
coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Max.
100
±20
5.7
4.5
25
Parameter
Units
V
VDS
Drain-to-Source Voltage
Gate-to-Source Voltage
V
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
A
@ TA = 70°C
@ TC = 25°C
45
DM
29
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
3.4
12
10
8
80
70
60
50
40
30
20
I = 3.4A
V
= 80V
I
= 3.4A
D
DS
D
VDS= 50V
T
T
= 125°C
J
6
4
= 25°C
14
J
2
0
4
6
8
10
12
16
0
4
8
12
16
V
, Gate-to-Source Voltage (V)
Q
Total Gate Charge (nC)
GS
G
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
Notes:
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 5.0mH, RG = 25Ω, IAS = 3.4A.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
1
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© 2012 International Rectifier
February 26, 2013
IRF6645/TRPbF
Electrical Characteristic @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250μA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
100
–––
–––
3.0
–––
0.12
28
–––
–––
35
V
V/°C
mΩ
V
Reference to 25°C, ID = 1mA
V
/ T
ΔΒ DSS Δ
J
V
GS = 10V, ID = 5.7A
RDS(on)
VDS = VGS, ID = 50μA
VGS(th)
–––
-12
–––
–––
–––
–––
–––
14
4.9
V
/ T
GS(th) Δ
Δ
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
7.4
––– mV/°C
J
V
DS = 100V, VGS = 0V
IDSS
20
250
100
-100
–––
20
μA
nA
S
VDS = 80V, VGS = 0V, TJ = 125°C
V
V
V
GS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
GS = -20V
DS = 10V, ID = 3.4A
gfs
Qg
–––
–––
–––
–––
–––
–––
–––
–––
V
DS = 50V
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
3.1
0.8
4.8
5.3
5.6
7.2
1.0
9.2
5.0
18
–––
–––
7.2
VGS = 10V
ID = 3.4A
Qgs2
Qgd
nC
Qgodr
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
See Fig. 15
Qsw
VDS = 16V, VGS = 0V
Qoss
RG
nC
Ω
Gate Resistance
V
DD = 50V, VGS = 10V
td(on)
tr
td(off)
tf
Turn-On Delay Time
–––
–––
–––
–––
–––
–––
–––
–––
–––
ID = 3.4A
Rise Time
RG=6.2Ω
Turn-Off Delay Time
ns
Fall Time
5.1
890
180
40
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
V
DS = 25V
Output Capacitance
pF
ƒ = 1.0MHz
Reverse Transfer Capacitance
Output Capacitance
VGS = 0V, VDS = 1.0V, f=1.0MHz
VGS = 0V, VDS = 80V, f=1.0MHz
870
100
Output Capacitance
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
D
IS
MOSFET symbol
showing the
Continuous Source Current
(Body Diode)
–––
–––
25
A
G
ISM
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
–––
–––
45
S
TJ = 25°C, IS = 3.4A, VGS = 0V
TJ = 25°C, IF = 3.4A, VDD = 50V
di/dt = 100A/μs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
31
1.3
47
60
V
ns
nC
Qrr
40
Notes:
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
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© 2012 International Rectifier
February 26, 2013
IRF6645/TRPbF
Absolute Maximum Ratings
Parameter
Max.
Units
Power Dissipation
Power Dissipation
Power Dissipation
2.2
W
P
P
P
@TA = 25°C
@TA = 70°C
@TC = 25°C
D
D
D
P
J
1.4
42
Peak Soldering Temperature
Operating Junction and
270
°C
T
T
T
-40 to + 150
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
58
Units
Rθ
Rθ
Rθ
Junction-to-Ambient
JA
JA
JA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
–––
–––
3.0
°C/W
RθJC
Rθ
–––
1.0
Junction-to-PCB Mounted
–––
J-PCB
100
10
D = 0.50
0.20
0.10
0.05
Ri (°C/W) τi (sec)
R1
R1
R2
R2
R3
R3
R4
R4
R5
R5
0.02
0.01
0.6677
1.0463
1.5612
0.000066
0.000896
0.004386
1
τ
τC
J τJ
τ
A
τ
τ
1 τ1
τ
τ
τ
2τ2
3τ3
4τ4
5τ5
Ci= τi/Ri
Ci= τi/Ri
29.2822 0.686180
25.4550 32
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x Zthja + Ta
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple incontact with top (Drain) of part.
Used double sided cooling, mounting pad with large heatsink.
R is measured at TJ of approximately 90°C.
θ
Mounted on minimum
Mounted to a PCB with
small clip heatsink (still air)
Surface mounted on 1 in. square Cu
board (still air).
footprint full size board with
metalized back and with small
clip heatsink (still air)
3
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© 2012 International Rectifier
February 26, 2013
IRF6645/TRPbF
100
10
1
100
10
1
VGS
15V
VGS
TOP
TOP
15V
10V
8.0V
7.0V
6.0V
10V
8.0V
7.0V
6.0V
BOTTOM
BOTTOM
6.0V
6.0V
60μs PULSE WIDTH
≤
≤60μs PULSE WIDTH
Tj = 150°C
Tj = 25°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 4. Typical Output Characteristics
Fig 5. Typical Output Characteristics
100
2.0
1.5
1.0
0.5
I
= 5.7A
V
= 10V
D
DS
V
= 10V
≤60μs PULSE WIDTH
GS
10
1
T = 150°C
J
T = 25°C
J
T = -40°C
J
0.1
4.0
5.0
6.0
7.0
8.0
-60 -40 -20
0
20 40 60 80 100120 140 160
V
, Gate-to-Source Voltage (V)
GS
T
J
, Junction Temperature (°C)
Fig 6. Typical Transfer Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
10000
1000
100
60
V
C
= 0V,
f = 1 MHZ
GS
T
= 25°C
A
= C + C , C SHORTED
iss
gs
gd ds
V
V
V
V
= 7.0V
= 8.0V
= 10V
= 15V
GS
GS
GS
GS
C
= C
rss
gd
C
= C + C
oss
ds
gd
50
40
30
20
C
iss
C
oss
C
rss
10
0
10
20
30
40
50
1
10
100
I , Drain Current (A)
V
, Drain-to-Source Voltage (V)
D
DS
Fig 9. Typical On-Resistance vs. Drain Current
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com © 2012 International Rectifier
4
February 26, 2013
IRF6645/TRPbF
1000
100
10
100.0
10.0
1.0
OPERATION IN THIS AREA
T
T
T
= 150°C
= 25°C
= -40°C
LIMITED BY R
(on)
J
J
J
DS
100μsec
1msec
1
T
= 25°C
A
Tj = 150°C
Single Pulse
10msec
V
= 0V
GS
0.1
0.1
0.1
1.0
10.0
100.0
1000.0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
, Source-to-Drain Voltage (V)
V
, Drain-toSource Voltage (V)
V
DS
SD
Fig11. Maximum Safe Operating Area
Fig 10. Typical Source-Drain Diode Forward Voltage
6.0
5.5
5.0
4.5
4.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
I
I
I
I
= 1.0A
D
D
D
D
= 1.0mA
= 250μA
= 50μA
3.5
3.0
2.5
2.0
-75 -50 -25
0
25
50
75 100 125 150
25
50
T
75
100
125
150
T
, Temperature ( °C )
, Ambient Temperature (°C)
J
J
Fig 13. Typical Threshold Voltage vs.
Fig 12. Maximum Drain Current vs. Ambient Temperature
Junction Temperature
120
I
D
TOP
BOTTOM
1.5A
2.4A
3.4A
100
80
60
40
20
0
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy vs. Drain Current
© 2012 International Rectifier
5
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February 26, 2013
IRF6645/TRPbF
Id
Vds
Vgs
L
VCC
Vgs(th)
DUT
0
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V
(BR)DSS
15V
t
p
DRIVER
L
V
DS
D.U.T
AS
R
G
+
-
V
DD
I
A
VGS
20V
t
0.01Ω
p
I
AS
Fig 16c. Unclamped Inductive Waveforms
Fig 16b. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+
-
VDD
10%
VGS
10V
td(on)
td(off)
tr
tf
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 17a. Switching Time Test Circuit
www.irf.com © 2012 International Rectifier
Fig 17b. Switching Time Waveforms
February 26, 2013
6
IRF6645/TRPbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
-
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• di/dt controlled by RG
Re-Applied
Voltage
RG
+
-
• Driver same type as D.U.T.
Body Diode
Inductor Current
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET Substrate and PCB Layout, SJ Outline
(Small Size Can, J-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
D
D
D
D
S
S
G
G = GATE
D = DRAIN
S = SOURCE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
7
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© 2012 International Rectifier
February 26, 2013
IRF6645/TRPbF
DirectFET Outline Dimension, SJ Outline
(Small Size Can, J-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC
IMPERIAL
CODE MIN MAX
MIN
MAX
0.191
0.156
0.112
0.018
0.024
0.024
0.028
0.028
0.010
0.041
0.093
0.028
0.007
A
B
C
D
E
F
4.75
3.70
2.75
0.35
0.58
0.58
0.68
0.68
0.23
0.95
2.25
0.59
0.08
4.85
3.95
2.85
0.45
0.62
0.62
0.72
0.72
0.27
1.05
2.35
0.70
0.17
0.187
0.146
0.108
0.014
0.023
0.023
0.027
0.027
0.009
0.037
0.089
0.023
0.003
G
H
J
K
L
M
P
R
0.020 0.080 0.0008 0.0031
DirectFET Part Marking
GATE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
8
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© 2012 International Rectifier
February 26, 2013
IRF6645/TRPbF
DirectFET Tape & Reel Dimension (Showing component orientation).
Loaded Tape Feed Direction
DIMENSIONS
METRIC
IMPERIAL
MIN
CODE
MIN
7.90
3.90
11.90
5.45
4.00
5.00
1.50
1.50
MAX
0.319
0.161
0.484
0.219
0.165
0.205
N.C
MAX
8.10
4.10
12.30
5.55
4.20
5.20
N.C
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6645TRPBF). For 1000 parts on 7"
reel, order IRF6645TR1PBF
A
B
C
D
E
F
0.311
0.154
0.469
0.215
0.158
0.197
0.059
0.059
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
IMPERIAL
IMPERIAL
METRIC
MAX
METRIC
MIN MAX
G
H
CODE
MIN
12.992
0.795
0.504
0.059
3.937
N.C
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
MAX
N.C
1.60
0.063
A
B
C
D
E
F
330.0
20.2
12.8
1.5
177.77
19.06
13.5
1.5
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
N.C
0.75
0.53
0.059
2.31
N.C
N.C
N.C
0.520
N.C
12.8
N.C
100.0
N.C
58.72
N.C
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
Revision History
Date
Comments
Updated package outline, on page 8.
Updated PD @TA = 25C from 3W to 2.2W, on page 3.
12/10/2012
2/26/2013
.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101N Sepulveda Blvd, El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
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© 2012 International Rectifier
February 26, 2013
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