IRF6648PBF_技术文档

PD - 97225A

IRF6648PbF

IRF6648TRPbF

DirectFET Power MOSFET

l RoHs Compliant

Typical values (unless otherwise specified)

l Lead-Free (Qualified up to 260°C Reflow)

l Application Specific MOSFETs

R_DS(on)

V_DSS

V_GS

l Optimized for Synchronous Rectification for

5V to 12V outputs

l Low Conduction Losses

5.5mΩ@ 10V

60V max ±20V max

Q_{g tot}Q_gd

Q_gs2

Q_rr

Q_ossV_gs(th)

36nC

14nC

2.7nC

37nC

21nC

4.0V

l Ideal for 24V input Primary Side Forward Converters

l Low Profile (<0.7mm)

l Dual Sided Cooling Compatible

l Compatible with existing Surface Mount Techniques

DirectFET ISOMETRIC

MN

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

SH

SJ

SP

MZ

MN

Description

The IRF6648PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TMpackag-

ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The

DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and

vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing

methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,

improving previous best thermal resistance by 80%.

The IRF6648PbF is an optimized switch for use in synchronous rectification circuits with 5-12Vout, and is also ideal for use as

a primary side switch in 24Vin forward converters. The reduced total losses in the device coupled with the high level of thermal

performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this

device ideal for high performance.

Absolute Maximum Ratings

Max.

60

Parameter

Units

V

V_DS

Drain-to-Source Voltage

±20

86

V

Gate-to-Source Voltage

GS

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

I

@ T_C= 25°C

D

69

@ T_C= 70°C

A

260

47

DM

E_AS

I_AR

Single Pulse Avalanche Energy

Avalanche Current

mJ

A

34

60

50

40

30

20

10

0

12.0

10.0

8.0

I

= 17A

I = 17A

D

V

= 48V

= 30V

DS

V

DS

6.0

4.0

T

= 125°C

12

J

2.0

T

= 25°C

6

J

0.0

4

8

10

14

16

0

5

10

15

20

25

30

35

40

Q , Total Gate Charge (nC)

G

V

Gate -to -Source Voltage (V)

GS,

Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage

Fig 2. Total Gate Charge vs. Gate-to-Source Voltage

Notes:

T_Cmeasured with thermocouple mounted to top (Drain) of part.

ꢀ Repetitive rating; pulse width limited by max. junction temperature.

Starting T_J= 25°C, L = 0.082mH, R_G= 25Ω, I_AS= 34A.

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

www.irf.com

1

08/24/06

IRF6648PbF

Electrical Characteristic @ T_J= 25°C (unless otherwise specified)

Conditions

V_GS= 0V, I_D= 250µA

Parameter

Min. Typ. Max. Units

BV_DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

60

–––

V

V/°C

mΩ

V

Reference to 25°C, I_D= 1mA

∆ΒV_DSS/∆T_J

R_DS(on)

––– 0.076 –––

V_GS= 10V, I_D= 17A i

–––

3.0

5.5

4.0

-11

–––

36

7.0

4.9

V_DS= V_GS, I_D= 150µA

V_GS(th)

∆V_GS(th)/∆T_J

I_DSS

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

–––

31

––– mV/°C

V_DS= 60V, V_GS= 0V

20

250

100

-100

–––

50

µA

nA

S

V_DS= 48V, V_GS= 0V, T_J= 125°C

V_GS= 20V

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

V_GS= -20V

V_DS= 10V, I_D= 17A

gfs

Q_g

–––

V_DS= 30V

Q_gs1

Q_gs2

Q_gd

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Q_gs2+ Q_gd)

Output Charge

7.5

2.7

14

–––

21

V_GS= 10V

I_D= 17A

nC

Q_godr

Q_sw

Q_oss

R_{G (Internal)}

t_d(on)

t_r

12

–––

See Fig. 15

17

V_DS= 16V, V_GS= 0V

21

nC

Gate Resistance

1.0

16

Ω

V_DD= 30V, V_GS= 10Vꢁi

Turn-On Delay Time

I_D= 17A

Rise Time

29

t_d(off)

t_f

R_G= 6.2Ω

See Fig. 16 & 17

V_GS= 0V

Turn-Off Delay Time

28

ns

Fall Time

13

C_iss

Input Capacitance

––– 2120 –––

V_DS= 25V

ƒ = 1.0MHz

C_oss

C_rss

C_oss

Output Capacitance

–––

600

170

–––

pF

Reverse Transfer Capacitance

Output Capacitance

V_GS= 0V, V_DS= 1.0V, f=1.0MHz

––– 2450 –––

––– 440 –––

V_GS= 0V, V_DS= 48V, f=1.0MHz

Output Capacitance

Diode Characteristics

Conditions

MOSFET symbol

Parameter

Continuous Source Current

Min. Typ. Max. Units

I_S

–––

81

showing the

(Body Diode)

A

I_SM

integral reverse

Pulsed Source Current

(Body Diode)ꢁg

–––

260

p-n junction diode.

T_J= 25°C, I_S= 17A, V_GS= 0V i

T_J= 25°C, I_F= 17A, V_DD= 30V

di/dt = 100A/µs iꢁSee Fig. 18

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

–––

31

1.3

47

56

V

ns

nC

Q_rr

37

Notes:

ꢀ Repetitive rating; pulse width limited by max. junction temperature.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

2

www.irf.com

IRF6648PbF

Absolute Maximum Ratings

Max.

2.8

Parameter

Units

W

P

@T_A= 25°C

@T_A= 70°C

@T_C= 25°C

Power Dissipation

D

P

J

1.8

89

270

T

Peak Soldering Temperature

Operating Junction and

°C

-40 to + 150

Storage Temperature Range

STG

Thermal Resistance

Parameter

Typ.

–––

12.5

–––

1.0

Max.

45

Units

R_θJA

Junction-to-Ambient

R_θJA

Junction-to-Ambient

Junction-to-Case

–––

1.4

°C/W

R_θJC

R_θJ-PCB

Junction-to-PCB Mounted

Linear Derating Factor

–––

0.022

W/°C

10

1

D = 0.50

0.20

0.10

0.05

0.02

0.01

R₁

R₂

R₃

0.1

τi (sec)

Ri (°C/W)

τ

^Jτ_J

τ

^Cτ_C

0.17199 0.000044

0.67673 0.001660

0.54961 0.007649

τ

¹τ₁

τ

²τ₂

³τ₃

Ci= τi/Ri

0.01

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

t

, Rectangular Pulse Duration (sec)

1

Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Notes:

R is measured at T_Jof approximately 90°C.

Used double sided cooling , mounting pad.

Mounted on minimum footprint full size board with metalized

back and with small clip heatsink.

θ

Mounted on minimum

Mounted to a PCB with

small clip heatsink (still air)

Surface mounted on 1 in. square Cu

footprint full size board with

metalized back and with small

clip heatsink (still air)

(still air).

www.irf.com

3

IRF6648PbF

1000

100

10

VGS

15V

TOP

15V

10V

8.0V

7.0V

6.0V

TOP

10V

8.0V

7.0V

6.0V

BOTTOM

100

10

1

6.0V

60µs PULSE WIDTH

Tj = 150°C

≤

60µs PULSE WIDTH

Tj = 25°C

≤

1

0.1

1

10

0.1

1

10

V

, Drain-to-Source Voltage (V)

DS

V

, Drain-to-Source Voltage (V)

DS

Fig 4. Typical Output Characteristics

Fig 5. Typical Output Characteristics

1000

100

10

2.0

1.5

1.0

0.5

V

= 10V

I

= 86A

DS

D

≤

V

= 10V

60µs PULSE WIDTH

GS

T

= 150°C

= 25°C

= -40°C

J

T

1

0.1

2

4

6

8

10

-60 -40 -20

0

20 40 60 80 100 120 140 160

T

J

, Junction Temperature (°C)

V

, Gate-to-Source Voltage (V)

GS

Fig 7. Normalized On-Resistance vs. Temperature

Fig 6. Typical Transfer Characteristics

30

10000

1000

100

V

= 0V,

= C

f = 1 MHZ

GS

T

= 25°C

J

C

+ C , C

SHORTED

iss

gs

gd

ds

Vgs = 7.0V

Vgs = 8.0V

Vgs = 10V

Vgs = 15V

= C

25

20

15

10

5

rss

oss

gd

= C + C

ds

gd

C

iss

C

oss

C

rss

0

20

40

60

80

100

1

10

, Drain-to-Source Voltage (V)

100

V

DS

I , Drain Current (A)

Fig 9. Norm^Dalized Typical On-Resistance vs.

Fig 8. Typical Capacitance vs.Drain-to-Source Voltage

Drain Current and Gate Voltage

4

www.irf.com

IRF6648PbF

1000

100

10

1

1000

100

10

OPERATION IN THIS AREA

LIMITED BY R (on)

DS

T

= 150°C

= 25°C

= -40°C

J

100µsec

1msec

10msec

1

Tc = 25°C

Tj = 150°C

Single Pulse

V

= 0V

1.2

GS

0

0.1

0.0

0.2

0.4

0.6

0.8

1.0

1.4

0

1

10

100

V

, Source-to-Drain Voltage (V)

V

, Drain-to-Source Voltage (V)

SD

DS

Fig11. Maximum Safe Operating Area

Fig 10. Typical Source-Drain Diode Forward Voltage

90

80

70

60

50

40

30

20

10

0

6.0

5.0

4.0

I

= 150µA

= 250µA

= 1.0mA

= 1.0A

D

3.0

2.0

-75 -50 -25

0

25 50 75 100 125 150

25

50

T

75

100

125

150

T

, Temperature ( °C )

, Case Temperature (°C)

J

C

Fig 13. Threshold Voltage vs. Temperature

Fig 12. Maximum Drain Current vs. Case Temperature

200

180

160

140

120

100

80

I

D

TOP

12A

18A

BOTTOM 34A

60

40

20

0

25

50

75

100

125

150

Starting T , Junction Temperature (°C)

J

Fig 14. Maximum Avalanche Energy vs. Drain Current

www.irf.com

5

IRF6648PbF

Current Regulator

Same Type as D.U.T.

Id

Vds

50KΩ

Vgs

.2µF

12V

.3µF

+

V

DS

D.U.T.

-

Vgs(th)

V

GS

3mA

I

D

G

Qgs1

Qgs2

Qgd

Qgodr

Current Sampling Resistors

Fig 15a. Gate Charge Test Circuit

Fig 15b. Gate Charge Waveform

V

(BR)DSS

15V

t

p

DRIVER

+

L

V

DS

D.U.T

AS

V_GS

R

G

V

DD

-

I

A

20V

0.01

Ω

t

p

I

AS

Fig 16b. Unclamped Inductive Waveforms

Fig 16a. Unclamped Inductive Test Circuit

L_D

V_DS

90%

+

-

V_DD

10%

V_GS

D.U.T

V_GS

t_d(on)

t_d(off)

t_r

Pulse Width < 1µs

Duty Factor < 0.1%

t_f

Fig 17a. Switching Time Test Circuit

Fig 17b. Switching Time Waveforms

6

www.irf.com

IRF6648PbF

Driver Gate Drive

P.W.

Period

D.U.T

Period

D =

+

*

=10V

V

GS

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

-

D.U.T. I Waveform

SD

+

-

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

-

+

D.U.T. V Waveform

DS

Diode Recovery

dv/dt

V

DD

V_DD

• di/dt controlled by R_G

Re-Applied

Voltage

R_G

+

-

• Driver same type as D.U.T.

Body Diode

Inductor Current

Forward Drop

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

I

SD

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 18. Diode Reverse Recovery Test Circuit for N-Channel

HEXFET^®Power MOSFETs

DirectFET Substrate and PCB Layout, MN Outline

(Medium Size Can, N-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.

This includes all recommendations for stencil and substrate designs.

G = GATE

D = DRAIN

S = SOURCE

D

S

G

www.irf.com

7

IRF6648PbF

DirectFET Outline Dimension, MN Outline

(Medium Size Can, N-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.

This includes all recommendations for stencil and substrate designs.

DirectFET Part Marking

8

www.irf.com

IRF6648PbF

DirectFET Tape & Reel Dimension (Showing component orientation).

NOTE: Controlling dimensions in mm

Std reel quantity is 4800 parts. (ordered as IRF6648TRPBF). For 1000 parts on 7"

reel, order IRF6648TR1PBF

REEL DIMENSIONS

STANDARD OPTION (QTY 4800)

TR1 OPTION (QTY 1000)

METRIC

MAX

IMPERIAL

METRIC

MAX

IMPERIAL

CODE

MIN

MAX

N.C

MIN

6.9

MAX

N.C

0.50

N.C

0.53

N.C

A

B

C

D

E

F

330.0

20.2

12.8

1.5

12.992

0.795

0.504

0.059

3.937

N.C

177.77

19.06

13.5

1.5

N.C

13.2

N.C

18.4

14.4

15.4

N.C

0.75

0.53

0.059

2.31

N.C

0.520

N.C

12.8

N.C

100.0

N.C

58.72

N.C

0.724

0.567

0.606

13.50

12.01

G

H

0.488

0.469

0.47

12.4

11.9

LOADED TAPE FEED DIRECTION

DIMENSIONS

METRIC

IMPERIAL

CODE

MIN

7.90

3.90

11.90

5.45

5.10

6.50

1.50

MIN

MAX

0.319

0.161

0.484

0.219

0.209

0.264

N.C

MAX

8.10

4.10

12.30

5.55

5.30

6.70

N.C

A

B

C

D

E

F

0.311

0.154

0.469

0.215

0.201

0.256

0.059

G

H

1.60

0.063

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.08/06

www.irf.com

9


型号：	IRF6648PBF
厂家：	Infineon
描述：	DirectFETPower MOSFET ??的DirectFET功率MOSFET ？晶体晶体管功率场效应晶体管开关脉冲瞄准线
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