IRF7171MPBF [INFINEON]
Optimized for Synchronous Rectification;
| 型号： | IRF7171MPBF |
| 厂家： | 
Infineon |
| 描述： | Optimized for Synchronous Rectification |
| 文件： | 总11页 (文件大小：751K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FastIRFET™
IRF7171MTRPbF
DirectFET® Power MOSFET
Typical values (unless otherwise specified)
Applications and Benefits
Ideal for High Performance Isolated Converter
Primary Switch
Optimized for Synchronous Rectification
RoHS Compliant, Halogen Free
Lead-Free (Qualified up to 260°C Reflow)
Low Conduction Losses
VDSS
100V min
VGS
±20V max
Qgd
RDS(on)
5.3m@ 10V
Vgs(th)
Qg tot
36nC
13nC
2.9V
High Cdv/dt Immunity
Low Profile (<0.7mm)
S
D
S
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
Industrial Qualified
G
D
Applicable DirectFET® Outline and Substrate Outline
MN
MN
Description
The IRF7171MTRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging
to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor
phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing meth-
ods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems.
The IRF7171MTRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for
system reliability improvements, and makes this device ideal for high performance power converters.
Ordering Information
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Tape and Reel
Quantity
4800
IRF7171MTRPbF
DirectFET® Medium Can
IRF7171MTRPbF
Absolute Maximum Ratings
Parameter
Max.
±20
93
Units
V
VGS
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
59
15
330
86
A
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
IDM
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
56
18.0
15.0
12.0
9.0
40
I
= 56A
D
V
= 6V
GS
VGS = 7V
VGS = 8V
VGS = 10V
VGS = 12V
30
20
10
0
T
= 125°C
J
T
= 25°C
J
6.0
3.0
0
25
50
75
100 125 150 175 200
4
6
8
10
12
14
16
18
20
I
, Drain Current (A)
V
Gate -to -Source Voltage (V)
D
GS,
Fig 2. Typical On-Resistance vs. Drain Current
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET® Website.
Surface mounted on 1 in. square Cu board, steady state.
Starting TJ = 25°C, L = 55µH, RG = 50, IAS = 56A.
1
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IRF7171MTRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
100 ––– –––
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
VGS = 0V, ID = 250µA
–––
–––
2.0
40
5.3
–––
––– mV/°C Reference to 25°C, ID = 1mA
VDSS/TJ
RDS(on)
6.5
3.6
VGS = 10V, ID = 56A
m
VGS(th)
V
VDS = VGS, ID = 150µA
Gate Threshold Voltage Temp. Coefficient –––
-6.2 ––– mV/°C
VGS(th)/TJ
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
––– –––
1
––– ––– 100
––– ––– -100
µA VDS = 80 V, VGS = 0V
V
V
V
GS = 20V
IGSS
nA
S
GS = -20V
gfs
80
––– –––
DS = 10V, ID =56A
Qg
–––
–––
–––
–––
36
6.9
2.4
13
54
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Pre– Vth Gate-to-Source Charge
Post– Vth Gate-to-Source Charge
Gate-to-Drain Charge
–––
–––
–––
VDS = 50V
VGS = 10V
ID = 56A
nC
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
––– 13.7 –––
––– 15.4 –––
––– 120 –––
See Fig.8
nC VDS = 50V, VGS = 0V
–––
–––
–––
1.0
9.3
27
–––
–––
–––
VDD = 50V, VGS = 10V
Rise Time
ID = 56A
ns
Turn-Off Delay Time
Fall Time
–––
–––
15
20
–––
–––
RG= 1.8
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 2160 –––
––– 970 –––
VGS = 0V
VDS = 50V
ƒ = 1.0MHz
pF
–––
60
–––
Coss
Coss
Output Capacitance
Output Capacitance
––– 4660 –––
––– 580 –––
VGS = 0V, VDS = 1.0V, ƒ =1.0MHz
VGS = 0V, VDS = 80V, ƒ =1.0MHz
Diode Characteristics
Parameter
Min. Typ. Max. Units
––– ––– 95
––– ––– 330
Conditions
MOSFET symbol
D
Continuous Source Current
(Body Diode)
IS
showing the
G
A
V
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
ISM
VSD
Diode Forward Voltage
––– –––
––– 66
1.3
TJ = 25°C, IS = 56A, VGS = 0V
trr
Reverse Recovery Time
Reverse Recovery Charge
–––
ns
TJ = 25°C, IF = 56A, VDD = 50V
Qrr
––– 126 –––
nC
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%
2
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IRF7171MTRPbF
Absolute Maximum Ratings
Symbol
PD @TC = 25°C Power Dissipation
PD @TC = 100°C Power Dissipation
Parameter
Max.
104
42
Units
W
Power Dissipation
2.8
PD @TA = 25°C
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
270
TP
-55 to + 150
TJ
TSTG
°C
Thermal Resistance
Symbol
Parameter
Typ.
Max.
45
Units
Junction-to-Ambient
–––
12.5
20
RJA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
Junction-to-PCB Mounted
–––
–––
1.2
RJA
°C/W
RJA
RJC
–––
1.0
–––
RJA-PCB
Notes:
Used double sided cooling, mounting pad with large heat sink.
Mounted on minimum footprint full size board with metalized
back and with small clip heat sink.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple in contact with top (Drain) of part.
R is measured at TJ of approximately 90°C.
3
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IRF7171MTRPbF
1000
100
10
1000
100
10
60µs PULSE WIDTH
Tj = 25°C
60µs
Tj = 150°C
PULSE WIDTH
VGS
15V
10V
VGS
15V
TOP
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
4.5V
4.5V
BOTTOM
BOTTOM
0.1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 4. Typical Output Characteristics
Fig 3. Typical Output Characteristics
1000
2.0
1.6
1.2
0.8
0.4
I
= 56A
D
V
= 10V
GS
100
T
= 150°C
J
T
= 25°C
J
10
V
= 50V
DS
60µs PULSE WIDTH
1.0
3
4
5
6
7
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
100000
14.0
V
= 0V,
f = 1 MHZ
GS
I
= 56A
D
C
=
+ C
, C SHORTED
C
gs
gd
ds
iss
12.0
10.0
8.0
C
= C
rss
gd
V
= 80V
DS
VDS= 50V
= 20V
C
= C + C
oss
ds
gd
10000
1000
100
V
DS
C
oss
C
iss
6.0
C
rss
4.0
2.0
10
0.0
0.1
1
10
100
0
5
10 15 20 25 30 35 40 45
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
Q
G
DS
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage
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4
IRF7171MTRPbF
1000
100
10
100
10
1
100µsec
OPERATION IN THIS
AREA LIMITED BY R (on)
T
= 150°C
J
DS
1msec
T
= 25°C
J
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
DC
V
= 0V
GS
0.1
1.0
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
V
, Drain-to-Source Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 9. Typical Source-Drain Diode Forward Voltage
Fig 10. Maximum Safe Operating Area
4.5
100
4.0
3.5
3.0
80
60
40
20
0
I
I
I
I
= 150µA
= 250µA
= 1.0mA
= 1.0A
D
D
D
D
2.5
2.0
-75 -50 -25
0
25 50 75 100 125 150
, Temperature ( °C )
J
25
50
75
100
125
150
T
T
, Case Temperature (°C)
C
Fig 11. Maximum Drain Current vs. Case Temperature
Fig 12. Typical Threshold Voltage vs. Junction Temperature
400
I
D
350
300
250
200
150
100
50
TOP
4.6A
11A
BOTTOM 56A
0
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 13. Maximum Avalanche Energy vs. Drain Current
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IRF7171MTRPbF
1000
100
10
Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
D = 0.01
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs. Pulse Width
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01 0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Notes:
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple incontact with top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
R is measured at TJ of approximately 90°C.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink (still air)
Surface mounted on 1 in. square Cu
board (still air).
6
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IRF7171MTRPbF
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 17b. Gate Charge Waveform
Fig 17a. Gate Charge Test Circuit
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
I
AS
0.01
t
p
Fig 18a. Unclamped Inductive Test Circuit
Fig 18b. Unclamped Inductive Waveforms
Fig 19a. Switching Time Test Circuit
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Fig 19b. Switching Time Waveforms
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7
IRF7171MTRPbF
DirectFET®Board Footprint, MN Outline
Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET®.
This includes all recommendations for stencil and substrate designs.
G=GATE
D=DRAIN
S=SOURCE
D
D
D
D
S
S
G
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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March 25, 2015
IRF7171MTRPbF
DirectFET® Outline Dimension, MN Outline
(Medium Size Can, N-Designation).
Please see DirectFET® application note AN-1035 for all details regarding the assembly of DirectFET®.
This includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC
IMPERIAL
CODE MIN MAX
MIN
MAX
0.250
0.199
0.156
0.018
0.032
0.036
0.056
0.036
0.020
0.050
0.113
0.023
A
B
C
D
E
F
6.25 6.35
4.80 5.05
3.85 3.95
0.35 0.45
0.78 0.82
0.88 0.92
1.38 1.42
0.88 0.92
0.48 0.52
1.17 1.27
2.77 2.87
0.246
0.189
0.152
0.014
0.031
0.035
0.054
0.035
0.019
0.046
0.109
G
H
J
K
L
M
R
P
0.535 0.595 0.021
0.02 0.08 0.0008 0.0031
0.08 0.17 0.003 0.007
Dimensions are shown in
millimeters (inches)
DirectFET® Part Marking
GATE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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IRF7171MTRPbF
DirectFET® Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF7171MTRPBF). For 1000 parts on 7"
reel, order IRF7171MTR1PBF
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
METRIC
IMPERIAL
TR1 OPTION (QTY 1000)
METRIC
IMPERIAL
CODE
MIN
12.992
0.795
0.504
0.059
3.937
N.C
MAX
N.C
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
MAX
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
MIN
MAX
N.C
A
B
C
D
E
F
330.0
20.2
12.8
1.5
177.77
19.06
13.5
1.5
0.75
0.53
0.059
2.31
N.C
N.C
N.C
0.520
N.C
12.8
N.C
100.0
N.C
58.72
N.C
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
LOADED TAPE FEED DIRECTION
DIMENSIONS
METRIC
IMPERIAL
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
MIN
MIN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
MAX
A
B
C
D
E
F
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
0.319
0.161
0.484
0.219
0.209
0.264
N.C
G
H
1.60
0.063
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRF7171MTRPbF
Qualification Information†
Qualification Level
Industrial†† *
MSL1
Moisture Sensitivity Level
RoHS Compliant
DirectFET® Medium Can
(per JEDEC J-STD-020D†††)
Yes
†
††
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
*
Industrial qualification standards except autoclave test conditions.
Revision History
Date
Comment
Updated RJA from “60°C/W” to “45°C/W” on page 3.
12/3/2014
3/25/2015
Updated ID @ TA and PD @TA based on R corrected on page 1 & page 3.
JA
Added “FastIRFET” on page 1.
IR WORLD HEADQUARTERS: 101N Sepulveda Blvd, El Segundo, California 90245, USA
To contact Internaꢀonal Recꢀfier, please visit hꢁp://www.irf.com/whoto‐call/
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