IRF7201 [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF7201 |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总7页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 91100D
IRF7201
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
A
A
1
2
3
4
8
S
S
S
G
D
VDSS = 30V
7
D
6
D
5
D
RDS(on) = 0.030Ω
Top View
Description
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET MOSFETs are well known for, provides the
designerwithanextremelyefficientandreliabledevice
for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. Withtheseimprovements,multiple
devicescanbeusedinanapplicationwithdramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain- Source Voltage
30
V
ID @ TC = 25°C
ID @ TC = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
7.3
5.8
A
58
PD @TC = 25°C
PD @TC = 70°C
2.5
W
Power Dissipation
1.6
0.02
Linear Derating Factor
W/°C
V
VGS
Gate-to-Source Voltage
± 20
VGSM
EAS
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy
30
V
70
mJ
V/ns
°C
dv/dt
TJ, TSTG
Peak Diode Recovery dv/dt
5.0
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Parameter
Maximum Junction-to-Ambientꢀ
Typ.
–––
Max.
50
Units
°C/W
RθJA
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1
08/15/03
IRF7201
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30 ––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.024 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.030
––– ––– 0.050
1.0 ––– –––
5.8 ––– –––
––– ––– 1.0
––– ––– 25
––– ––– -100
––– ––– 100
VGS = 10V, ID = 7.3A
GS = 4.5V, ID = 3.7A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
V
VGS(th)
gfs
Gate Threshold Voltage
V
S
VDS = VGS, ID = 250µA
VDS = 15V, ID = 2.3A
Forward Transconductance
VDS = 24V, VGS = 0V
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = -20V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
––– 19
28
ID = 4.6A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 2.3 3.5
––– 6.3 9.5
––– 7.0 –––
––– 35 –––
––– 21 –––
––– 19 –––
––– 550 –––
––– 260 –––
––– 100 –––
nC VDS = 24V
VGS = 10V, See Fig. 10
VDD = 15V
ID = 4.6A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.2Ω
RD = 3.2Ω,
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
2.5
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
58
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– 1.2
––– 48 73
––– 73 110
V
TJ = 25°C, IS = 4.6A, VGS = 0V
ns
TJ = 25°C, IF = 4.6A
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 4.6A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
max. junction temperature. (See fig. 11)
VDD = 15V, starting TJ = 25°C, L = 6.6mH
RG = 25Ω, IAS = 4.6A. (See Figure 8)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ When mounted on 1 inch square copper board, t<10 sec
2
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IRF7201
100
10
1
100
10
1
VGS
15V
VGS
15V
TOP
TOP
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
BOTTOM 3.0V
3.0V
3.0V
20µs PULSE WIDTH
= 25°C
20µs PULSE WIDTH
T
J
T
J
= 150°C
A
A
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
100
TJ = 25°C
TJ = 150°C
10
T = 150°C
J
10
T = 25°C
J
1
VDS = 10V
20µs PULSE WIDTH
V
GS
= 0V
A
0.1
1
5.5A
0.4
0.6
0.8
1.0
1.2
3.0
3.5
4.0
4.5
5.0
V
, Source-to-Drain Voltage (V)
VGS , Gate-to-Source Voltage (V)
SD
Fig 4. Typical Source-Drain Diode
Fig 3. Typical Transfer Characteristics
Forward Voltage
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3
IRF7201
0.20
0.15
0.10
0.05
0.00
2.0
I
= 4.6A
D
1.5
1.0
0.5
0.0
V
GS
= 4.5V
V
= 10V
GS
30
V
= 10V
GS
A
A
0
10
20
40
-60 -40 -20
0
20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
J
I
, Drain Current (A)
D
Fig 5. Normalized On-Resistance
Fig 6. On-Resistance Vs. Drain Current
Vs. Temperature
200
0.05
I
D
TOP
2.1A
3.7A
BOTTOM 4.6A
160
120
80
40
0
0.04
0.03
0.02
I
= 7.3A
D
A
150
A
2
4
6
8
10
12
14
16
25
50
75
100
125
Starting T , Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig 7. On-Resistance Vs. Gate Voltage
4
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IRF7201
20
16
12
8
1000
800
600
400
200
0
I
= 4.6A
V
C
C
C
= 0V,
f = 1MHz
D
GS
iss
rss
oss
= C + C
,
C
SHORTED
V
V
= 24V
= 15V
gs
gd
ds
DS
= C
gd
DS
= C + C
ds
gd
C
iss
C
oss
4
C
rss
0
A
A
0
5
10
15
20
25
30
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 10. Typical Gate Charge Vs.
Fig 9. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
Notes:
SINGLE PULSE
1. Duty factor D =
2. Peak T =P
J
t / t
1
x Z
(THERMAL RESPONSE)
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7201
SO-8 Package Details
INCHES
MIN MAX
.0532 .0688 1.35
MILLIMETERS
DIM
A
D
- B -
MIN
MAX
1.75
0.25
0.46
0.25
4.98
3.99
5
A1 .0040 .0098 0.10
8
1
7
2
6
3
5
4
5
B
C
D
E
e
.014
.018
0.36
H
E
.0075 .0098 0.19
0.25 (.010)
M
A M
- A -
.189
.150
.196
.157
4.80
3.81
e
6X
.050 BASIC
.025 BASIC
1.27 BASIC
0.635 BASIC
5.80 6.20
K x 45°
e1
e1
H
K
L
θ
.2284 .2440
A
.011
0.16
0°
.019
.050
8°
0.28
0.41 1.27
0° 8°
0.48
- C -
0.10 (.004)
6
C
8X
L
8X
A1
C A S B S
B 8X
0.25 (.010)
θ
M
RECOMMENDED FOOTPRINT
NOTES:
0.72 (.028 )
8X
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
6.46 ( .255 )
1.78 (.070)
8X
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
6
1.27 ( .050 )
3X
SO-8 Part Marking
6
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IRF7201
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/03
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