IRF7314 [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF7314 |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总7页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1436B
IRF7314
PRELIMINARY
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Surface Mount
1
8
S1
D1
VDSS = -20V
2
7
G1
D1
3
6
S2
D2
l Fully Avalanche Rated
4
5
G2
D2
RDS(on) = 0.058Ω
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. Withtheseimprovements,multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
SO -8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
-20
V
VGS
± 12
TA = 25°C
TA = 70°C
-5.3
Continuous Drain Currentꢀ
ID
-4.3
A
Pulsed Drain Current
IDM
IS
-21
-2.5
Continuous Source Current (Diode Conduction)
TA = 25°C
TA = 70°C
2.0
Maximum Power Dissipation ꢀ
PD
W
1.3
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
150
mJ
A
-2.9
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
EAR
0.20
mJ
dv/dt
TJ,TSTG
-5.0
V/ ns
°C
-55 to + 150
Thermal Resistance Ratings
Parameter
Symbol
Limit
Units
Maximum Junction-to-Ambientꢀ
RθJA
62.5
°C/W
11/18/97
IRF7314
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-20 ––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.031 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.049 0.058
––– 0.082 0.098
-0.70 ––– –––
––– 5.9 –––
––– ––– -1.0
––– ––– -25
––– ––– 100
––– ––– -100
VGS = -4.5V, ID = -2.9A
GS = -2.7V, ID = -1.5A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
V
VGS(th)
gfs
Gate Threshold Voltage
V
S
VDS = VGS, ID = -250µA
VDS = -10V, ID = -1.5A
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 55°C
VGS = -12V
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 12V
Qg
––– 19
29
ID = -2.9A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
––– 4.0 6.1
nC
ns
pF
VDS = -16V
––– 7.7
––– 15
––– 40
––– 42
––– 49
12
22
60
63
73
VGS = -4.5V, See Fig. 10
VDD = -10V
RiseTime
ID = -2.9A
td(off)
tf
Turn-Off Delay Time
RG = 6.0Ω
FallTime
RD = 3.4Ω
Ciss
Coss
Crss
Input Capacitance
––– 780 –––
––– 470 –––
––– 240 –––
VGS = 0V
Output Capacitance
VDS = -15V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
––– ––– -2.5
A
ISM
Pulsed Source Current
(Body Diode)
integral reverse
G
––– ––– -21
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– -0.78 -1.0
V
TJ = 25°C, IS = -2.9A, VGS = 0V
TJ = 25°C, IF = -2.9A
––– 47
––– 49
71
73
ns
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
I ≤ -2.9A, di/dt ≤ -77A/µs, VDD ≤ V(BR)DSS
,
SD
max. junction temperature. ( See fig. 11 )
TJ ≤ 150°C
Starting TJ = 25°C, L = 35mH
RG = 25Ω, IAS = -2.9A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Surface mounted on FR-4 board, t ≤ 10sec.
IRF7314
100
10
1
100
10
1
VGS
VGS
TOP
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
TOP
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
BOTTOM -1.50V
BOTTOM -1.50V
-1.50V
-1.50V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 150 C
J
°
T = 25 C
J
0.1
0.1
0.1
0.1
1
10
1
10
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
100
°
T = 25 C
°
T = 150 C
J
J
10
°
T = 150 C
J
10
°
T = 25 C
J
1
V
= -10V
DS
20µs PULSE WIDTH
V
= 0 V
GS
1.2
0.1
0.2
1
1.5
0.4
0.6
0.8
1.0
1.4
2.0
2.5
3.0
3.5 4.0 4.5
5.0
-V ,Source-to-Drain Voltage (V)
SD
-V , Gate-to-Source Voltage (V)
GS
Fig 4. Typical Source-Drain Diode
Fig 3. Typical Transfer Characteristics
Forward Voltage
IRF7314
2.0
0.8
0.6
0.4
0.2
0.0
I
= -2.9A
D
1.5
1.0
0.5
0.0
V
= -2.7V
GS
V
= -4.5V
GS
V
= -4.5V
GS
A
A
-60 -40 -20
0
20
40
60
80
100 120 140 160
0
4
8
12
16
20
T
J
, Junction Tem perature (°C)
-I , Drain Current (A)
D
Fig 5. Normalized On-Resistance
Fig 6. Typical On-Resistance Vs. Drain
Vs. Temperature
Current
0.08
400
I
D
TOP
-1.3A
-2.3A
BOTTOM -2.9A
0.07
0.06
0.05
0.04
0.03
300
200
100
0
I
= -5.3A
D
A
25
50
75
100
125
150
0.0
2.0
4.0
6.0
8.0
°
Starting T , Junction Temperature ( C)
J
V G S , Gate-to-Source Voltage (V)
Fig 8. Maximum Avalanche Energy
Fig 7. Typical On-Resistance Vs. Gate
Vs. Drain Current
Voltage
IRF7314
1400
1200
1000
800
600
400
200
0
10
8
V
C
C
C
= 0V,
f = 1M Hz
I
= -2.9A
GS
iss
D
= C
= C
= C
+ C
+ C
,
C
SHORTED
gs
gd
ds
gd
ds
rss
oss
V
= -16V
DS
gd
C
iss
6
C
oss
4
C
rss
2
0
A
A
1
10
100
0
5
10
15
20
25
30
-V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
D S
G
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
0.50
0.20
0.10
0.05
10
0.02
0.01
P
DM
1
t
1
t
2
Notes:
1. Duty factor D = t / t
SINGLE PULSE
(THERMAL RESPONSE)
1
2
2. Peak T = P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF7314
Package Outline
SO8 Outline
INCHES
MILLIMETERS
DIM
D
MIN
MAX
.0688
.0098
.018
MIN
1.35
0.10
0.36
0.19
4.80
3.81
MAX
1.75
0.25
0.46
0.25
4.98
3.99
5
- B -
A
.0532
.0040
.014
A1
B
8
1
7
2
6
3
5
4
5
H
E
- A -
0.25 (.010)
M
A M
C
D
E
.0075
.189
.0098
.196
.150
.157
e
e
.050 BASIC
.025 BASIC
1.27 BASIC
K
x 45°
6X
e1
e1
H
K
0.635 BASIC
θ
.2284
.011
0.16
0°
.2440
5.80
0.28
0.41
0°
6.20
0.48
1.27
8°
A
.019
.050
8°
- C -
0.10 (.004)
6
C
8X
L
8X
A1
L
B
8X
θ
0.25 (.010)
M
C A S B S
RECOMMENDED FOOTPRINT
NOTES:
0.72 (.028
8X
)
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION INCH.
:
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
6.46
(
.255
)
1.78 (.070)
8X
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO
A
SUBSTRATE..
6
1.27
(
.050
)
3X
Part Marking Information
SO8
EXAM PLE : THIS IS AN IRF7101
DATE CO DE (YW W )
LAST DIGIT O F THE YEAR
W EEK
Y
=
W W
=
312
XXXX
INTERNATIO NAL
RECTIFIER
LOG O
F7101
W AFER
LO T CODE
PART NUM BER
TOP
(LAST
4 DIG ITS)
BO TTO M
IRF7314
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
N OTES:
1. C ON TRO LLIN G DIM EN SION : M ILLIM ETER.
2. ALL DIM ENSIO N S ARE SHO W N IN M ILLIM ETER S(IN CH ES).
3. OU TLIN E C O N FOR M S TO EIA-481 & EIA-541.
330.00
(12.992)
M AX.
14.40 ( .566 )
12.40 ( .488 )
NO TES :
1. CO NTRO LLING DIMENSIO N : MILLIMETER.
2. OUTLINE CONFO RM S TO EIA-481 & EIA-541.
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IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
11/97
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