IRF7331 [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF7331 |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总9页 (文件大小：208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94225
IRF7331
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
VDSS
20V
RDS(on) max (mΩ)
30@VGS = 4.5V
ID
7.0A
45@VGS = 2.5V
5.6A
l Available in Tape & Reel
Description
1
8
D1
S1
These N-Channel HEXFET power MOSFETs from
International Rectifier utilize advanced processing
techniquestoachievetheextremelylowon-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications.
2
7
G 1
D 1
3
4
6
S2
D2
5
G 2
D 2
Top View
SO-8
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. Withtheseimprovements,multiple
devicescanbeusedinanapplicationwithdramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain- Source Voltage
20
V
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
7.0
5.5
A
28
2.0
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
Power Dissipation
W
1.3
Linear Derating Factor
16
mW/°C
VGS
Gate-to-Source Voltage
± 12
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Symbol
RθJL
Parameter
Junction-to-Drain Lead
Typ.
–––
Max.
20
Units
RθJA
Junction-to-Ambient
–––
62.5
°C/W
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1
7/17/01
IRF7331
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
20 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.013 ––– V/°C Reference to 25°C, ID = 1mA
––– –––
––– –––
30
45
VGS = 4.5V, ID = 7.0A
VGS = 2.5V, ID = 5.6A
VDS = VGS, ID = 250µA
VDS = 10V, ID = 7.0A
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 70°C
VGS = 12V
RDS(on)
Static Drain-to-Source On-Resistance
mΩ
VGS(th)
gfs
Gate Threshold Voltage
0.6 ––– 1.2
14 ––– –––
––– ––– 1.0
––– ––– 25
––– ––– 100
––– ––– -100
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -12V
Qg
––– 13
20
ID = 7.0A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 3.7 –––
––– 2.1 –––
––– 7.6 –––
––– 22 –––
––– 110 –––
––– 50 –––
––– 1340 –––
––– 170 –––
––– 120 –––
nC VDS = 10V
VGS = 4.5V
VDD = 10V
ID = 1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 53Ω
VGS = 4.5V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF
VDS = 16V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
showing the
–––
–––
2.0
28
–––
–––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– 1.2
V
TJ = 25°C, IS = 2.0A, VGS = 0V
––– 31
––– 15
47
23
ns
TJ = 25°C, IF = 2.0A
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on 1 in square Cu board
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF7331
100
10
1
1000
100
10
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
TOP
TOP
BOTTOM 1.5V
BOTTOM 1.5V
1.50V
1
1.50V
20µs PULSE WIDTH
°
20µs PULSE WIDTH
°
T = 150 C
J
T = 25 C
J
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
7.0A
=
I
D
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 150 C
J
10
V
= 15V
DS
20µs PULSE WIDTH
V
= 4.5V
GS
1
1.5
2.0
2.5
3.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7331
8
6
4
2
0
2400
2000
I
D
= 7.0A
V
= 0V,
f = 1 MHZ
GS
C
= C + C
,
C
ds
SHORTED
V
= 10V
DS
iss
gs
gd
C
= C
rss
gd
C
= C + C
oss
ds gd
1600
Ciss
1200
800
400
Coss
Crss
0
1
10
100
0
4
8
12
16
20
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T = 150 C
J
100µsec
1msec
10msec
°
T = 25 C
J
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
1.0
0.1
0.1
0.2
0.4
0.6
0.8
1.2
0.1
1
10
100
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF7331
8.0
6.0
4.0
2.0
0.0
RD
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7331
0.05
0.04
0.03
0.02
0.12
0.10
0.08
0.06
0.04
0.02
0.00
I
= 7.0A
D
V
= 2.5V
GS
V
= 4.5V
GS
0.01
2.0
4.0
6.0
8.0
0
5
10
15
20
25
30
V
Gate -to -Source Voltage (V)
I
, Drain Current (A)
GS,
D
Fig 12. Typical On-Resistance Vs.
Fig 13. Typical On-Resistance Vs.
Gate Voltage
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
Q
Q
G
.2µF
12V
.3µF
VGS
+
Q
V
GS
GD
DS
D.U.T.
-
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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IRF7331
60
50
40
30
20
10
0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
I
= 250µA
D
-75 -50 -25
0
25
50
75 100 125 150
0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000
Time (sec)
T
, Temperature ( °C )
J
Fig 16. Typical Power Vs. Time
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
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7
IRF7331
SO-8 Package Details
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A1 .0040
b
c
.013
8
1
7
2
6
3
5
4
.0075
.189
.0098
.1968
.1574
6
H
D
E
e
E
0.25 [.010]
A
.1497
.050 BASIC
1.27 BASIC
0.635 BASIC
e 1 .025 BASIC
H
K
L
y
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
A
F OOT PRINT
8X 0.72 [.028]
NOT ES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT L INE CONF OR MS T O JE DE C OUT L INE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
YWW
XXXX
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
F7101
PART NUMBER
8
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IRF7331
SO-8 Tape and Reel
T ER M IN AL N U M B E R
1
12.3
11.7
(
(
.484
.461
)
)
8 .1 ( .318
7 .9 ( .312
)
)
F E ED D IR EC TIO N
N O TE S :
1 . C O N TR O L L IN G D IM E N S IO N : M IL L IM E TE R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E TE R S (IN C H E S ).
3 . O U T L IN E C O N F O R M S TO E IA -4 8 1
& E IA -5 4 1 .
330.00
(12.992)
M A X .
14.40
12.40
(
(
.566
.488
)
)
N O TE S
1. C O N T R O LLIN G D IM E N SIO N : M ILL IM E TE R .
2. O U TL IN E C O N F O R M S TO EIA -481 E IA -541.
:
&
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.7/01
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9
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