IRF7343IPBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF7343IPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总10页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96088
IRF7343IPbF
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Fully Avalanche Rated
l Lead-Free
N-CHANNEL MOSFET
N-Ch P-Ch
1
8
D1
D1
S1
G1
2
7
VDSS 55V
-55V
3
4
6
5
S2
G2
D2
D2
P-CHANNEL MOSFET
RDS(on) 0.050Ω 0.105Ω
Description
Top View
FifthGenerationHEXFETsfromInternationalRectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
SO-8
Absolute Maximum Ratings
Max.
Parameter
N-Channel
P-Channel
-55
Units
V
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Drain-Source Voltage
55
4.7
3.8
38
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
-3.4
-2.7
-27
A
PD@TA = 25°C
PD@TA = 70°C
Maximum Power Dissipation ꢀ
Maximum Power Dissipation ꢀ
Single Pulse Avalanche Energy
Avalanche Current
2.0
1.3
W
W
EAS
72
114
-3.4
mJ
A
IAR
4.7
EAR
Repetitive Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
0.20
± 20
mJ
V
V/ns
°C
VGS
dv/dt
TJ,TSTG
5.0
-5.0
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Parameter
Maximum Junction-to-Ambient ꢀ
Typ.
Max.
62.5
Units
°C/W
RθJA
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1
07/07/06
IRF7343IPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 4.7A
VGS = 4.5V, ID = 3.8A
VGS = -10V, ID = -3.4A
VGS = -4.5V, ID = -2.7A
N-Ch 55
P-Ch -55
0.059
0.054
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
N-Ch
P-Ch
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V/°C
0.043 0.050
0.056 0.065
0.095 0.105
0.150 0.170
N-Ch
P-Ch
RDS(ON)
Static Drain-to-Source On-Resistance
Ω
N-Ch 1.0
P-Ch -1.0
N-Ch 7.9
P-Ch 3.3
24
26
2.3 3.4
3.0 4.5
7.0 10
8.4 13
8.3 12
V
DS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 10V, ID = 4.5A
VGS(th)
gfs
Gate Threshold Voltage
V
S
ForwardTransconductance
VDS = -10V, ID = -3.1A
VDS = 55V, VGS = 0V
V
VDS = 55V, VGS = 0V, TJ = 55°C
VDS = -55V, VGS = 0V, TJ = 55°C
VGS = ±20V
N-Ch
P-Ch
N-Ch
P-Ch
2.0
-50
25
-250
±100
36
DS = -55V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
µA
nA
IGSS
Qg
Gate-to-SourceForwardLeakage
Total Gate Charge
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Channel
ID = 4.5A, VDS = 44V, VGS = 10V
38
Qgs
Qgd
td(on)
tr
Gate-to-SourceCharge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
P-Channel
ID = -3.1A, VDS = -44V, VGS = -10V
N-Channel
VDD = 28V, ID = 1.0A, RG = 6.0Ω,
RD = 16Ω
14
3.2 4.8
10
32
43
22
15
48
64
20
32
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
P-Channel
V
DD = -28V, ID = -1.0A, RG = 6.0Ω,
13
22
RD = 16Ω
N-Channel
VGS = 0V, VDS = 25V, = 1.0MHz
740
690
190
210
71
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
P-Channel
VGS = 0V, VDS = -25V, = 1.0MHz
86
Source-Drain Ratings and Characteristics
Parameter
N-Ch
Min. Typ. Max. Units
Conditions
2.0
-2.0
38
IS
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
A
ISM
-27
0.70 1.2
-0.80 -1.2
60
54
120 170
85 130
TJ = 25°C, IS = 2.0A, VGS = 0V
TJ = 25°C, IS = -2.0A, VGS = 0V
V
VSD
trr
90
80
N-Channel
ns
nC
Reverse Recovery Time
TJ = 25°C, IF =2.0A, di/dt = 100A/µs
P-Channel
Qrr
Reverse Recovery Charge
TJ = 25°C, IF = -2.0A, di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 22 )
ꢀ Surface mounted on FR-4 board, t ≤ 10sec.
N-Channel ISD ≤ 4.7A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
N-Channel Starting TJ = 25°C, L = 6.5mH RG = 25Ω, IAS = 4.7A.
P-Channel Starting TJ = 25°C, L = 20mH RG = 25Ω, IAS = -3.4A.
2
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IRF7343IPbF
N-Channel
100
10
1
100
VGS
15V
12V
10V
8.0V
VGS
15V
12V
10V
8.0V
TOP
TOP
4.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
4.0V
3.5V
BOTTOM 3.0V
10
3.0V
3.0V
20µs PULSE WIDTH
°
T = 25 C
J
20µs PULSE WIDTH
°
T = 150 C
J
1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
100
10
1
°
T = 25 C
J
°
T = 150 C
J
°
T = 150 C
J
°
T = 25 C
J
V
= 25V
DS
V
= 0 V
20µs PULSE WIDTH
GS
0.1
0.2
3
4
5 6
0.5
0.8
1.1
1.4
V
, Gate-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
GS
SD
Fig 4. Typical Source-Drain Diode
Fig 3. Typical Transfer Characteristics
Forward Voltage
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3
IRF7343IPbF
N-Channel
2.5
0.120
4.7A
=
I
D
2.0
1.5
1.0
0.5
0.0
0.100
0.080
0.060
0.040
VGS = 4.5V
VGS = 10V
V
=10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
0
10
20
30
40
T , Junction Temperature ( C)
J
I
, Drain Current (A)
D
Fig 6. Typical On-Resistance Vs. Drain
Fig 5. Normalized On-Resistance
Current
Vs. Temperature
0.12
0.10
0.08
0.06
0.04
200
I
D
TOP
2.1A
3.8A
BOTTOM 4.7A
160
120
80
40
0
I
= 4.7A
D
A
0
2
4
6
8
10
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
VGS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Fig 8. Maximum Avalanche Energy
Voltage
Vs. Drain Current
4
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IRF7343IPbF
N-Channel
1200
1000
800
600
400
200
0
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
I =
4.5A
D
C
= C + C
iss
gs
gd ,
V
V
V
= 48V
= 30V
= 12V
DS
DS
DS
C
= C
rss
gd
C
= C + C
gd
oss
ds
C
iss
C
oss
4
C
rss
0
0
10
20
30
40
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7343IPbF
P-Channel
100
100
VGS
VGS
-15V
-12V
-10V
-8.0V
TOP
TOP
-15V
-12V
-10V
-8.0V
-4.5V
-4.5V
-4.0V
-3.5V
BOTTOM-3.0V
-4.0V
-3.5V
BOTTOM -3.0V
10
10
-3.0V
-3.0V
1
1
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
J
°
T = 150 C
J
°
0.1
0.1
0.1
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 12. Typical Output Characteristics
Fig 13. Typical Output Characteristics
100
10
100
°
T = 25 C
J
°
T = 150 C
J
°
T = 150 C
J
10
°
T = 25 C
J
1
V
= -25V
DS
V
= 0 V
GS
1.2
20µs PULSE WIDTH
0.1
0.2
1
0.4
0.6
0.8
1.0
1.4
3
4
5
6 7
-V ,Source-to-Drain Voltage (V)
SD
-V , Gate-to-Source Voltage (V)
GS
Fig 14. Typical Transfer Characteristics
Fig 15. Typical Source-Drain Diode
ForwardVoltage
6
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IRF7343IPbF
P-Channel
2.0
1.5
1.0
0.5
0.0
0.240
-3.4 A
=
I
D
0.200
0.160
0.120
0.080
VGS = -4.5V
VGS = -10V
V
=-10V
GS
0
2
4
6
8
10
12
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-I , Drain Current (A)
T , Junction Temperature ( C)
J
D
Fig 17. Typical On-Resistance Vs. Drain
Fig 16. Normalized On-Resistance
Current
Vs.Temperature
0.45
300
I
D
TOP
-1.5A
-2.7A
BOTTOM -3.4A
250
200
150
100
50
0.35
0.25
0.15
0.05
I
= -3.4 A
D
0
A
25
50
75
100
125
150
2
5
8
11
14
°
Starting T , Junction Temperature ( C)
J
-VGS , Gate-to-Source Voltage (V)
Fig 18. Typical On-Resistance Vs. Gate
Fig 19. Maximum Avalanche Energy
Voltage
Vs. Drain Current
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IRF7343IPbF
P-Channel
1200
20
16
12
8
V
= 0V,
f = 1MHz
gd , ds
I
D
=
-3.1A
GS
V
V
V
=-48V
=-30V
=-12V
C
= C + C
C
SHORTED
DS
DS
DS
iss
gs
C
= C
gd
rss
C
= C + C
ds
960
720
480
240
0
oss
gd
C
iss
C
C
oss
4
rss
0
1
10
100
0
10
20
30
40
-V , Drain-to-Source Voltage (V)
DS
Q
, Total Gate Charge (nC)
G
Fig 21. Typical Gate Charge Vs.
Fig 20. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
D = 0.50
0.20
0.10
0.05
10
0.02
0.01
P
2
DM
1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig22. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
8
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IRF7343IPbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
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9
IRF7343IPbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/2006
10
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