IRF7343QPBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF7343QPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总10页 (文件大小：238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96110
IRF7343QPBF
HEXFET® Power MOSFET
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Advanced Process Technology
UltraLowOn-Resistance
Dual N and P Channel MOSFET
SurfaceMount
Available in Tape & Reel
150°COperatingTemperature
Automotive [Q101] Qualified
Lead-Free
N-CHANNEL MOSFET
N-Ch P-Ch
1
8
D1
D1
S1
G1
2
7
VDSS 55V
-55V
3
4
6
5
S2
G2
D2
D2
P-CHANNEL MOSFET
RDS(on) 0.050Ω 0.105Ω
Top View
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
SO-8
Absolute Maximum Ratings
Max.
Parameter
N-Channel
P-Channel
-55
Units
V
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Drain-Source Voltage
55
4.7
3.8
38
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
-3.4
-2.7
-27
A
PD@TA = 25°C
PD@TA = 70°C
Maximum Power Dissipation ꢀ
Maximum Power Dissipation ꢀ
Single Pulse Avalanche Energy
Avalanche Current
2.0
1.3
W
W
EAS
72
114
-3.4
mJ
A
IAR
4.7
EAR
Repetitive Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
0.20
± 20
mJ
V
V/ns
°C
VGS
dv/dt
TJ,TSTG
5.0
-5.0
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Parameter
Maximum Junction-to-Ambient ꢀ
Typ.
Max.
62.5
Units
°C/W
RθJA
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1
07/23/07
IRF7343QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 4.7A
VGS = 4.5V, ID = 3.8A
VGS = -10V, ID = -3.4A
VGS = -4.5V, ID = -2.7A
N-Ch 55
P-Ch -55
0.059
0.054
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
N-Ch
P-Ch
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V/°C
0.043 0.050
0.056 0.065
0.095 0.105
0.150 0.170
N-Ch
P-Ch
RDS(ON)
Static Drain-to-Source On-Resistance
Ω
N-Ch 1.0
P-Ch -1.0
N-Ch 7.9
P-Ch 3.3
24
26
2.3 3.4
3.0 4.5
7.0 10
8.4 13
8.3 12
V
DS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 10V, ID = 4.5A
VGS(th)
gfs
Gate Threshold Voltage
V
S
ForwardTransconductance
VDS = -10V, ID = -3.1A
VDS = 55V, VGS = 0V
V
VDS = 55V, VGS = 0V, TJ = 55°C
VDS = -55V, VGS = 0V, TJ = 55°C
VGS = ±20V
N-Ch
P-Ch
N-Ch
P-Ch
2.0
-2.0
25
-25
±100
36
DS = -55V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
µA
nA
IGSS
Qg
Gate-to-SourceForwardLeakage
Total Gate Charge
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Channel
ID = 4.5A, VDS = 44V, VGS = 10V
38
Qgs
Qgd
td(on)
tr
Gate-to-SourceCharge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
P-Channel
ID = -3.1A, VDS = -44V, VGS = -10V
N-Channel
VDD = 28V, ID = 1.0A, RG = 6.0Ω,
RD = 28Ω
14
3.2 4.8
10
32
43
22
15
48
64
20
32
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
P-Channel
V
DD = -28V, ID = -1.0A, RG = 6.0Ω,
13
22
RD = 28Ω
N-Channel
VGS = 0V, VDS = 25V, = 1.0MHz
740
690
190
210
71
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
P-Channel
VGS = 0V, VDS = -25V, = 1.0MHz
86
Source-Drain Ratings and Characteristics
Parameter
N-Ch
Min. Typ. Max. Units
Conditions
2.0
-2.0
38
IS
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
A
ISM
-27
0.70 1.2
-0.80 -1.2
60
54
120 170
85 130
TJ = 25°C, IS = 2.0A, VGS = 0V
TJ = 25°C, IS = -2.0A, VGS = 0V
V
VSD
trr
90
80
N-Channel
ns
nC
Reverse Recovery Time
TJ = 25°C, IF =2.0A, di/dt = 100A/µs
P-Channel
Qrr
Reverse Recovery Charge
TJ = 25°C, IF = -2.0A, di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 22 )
ꢀ Surface mounted on FR-4 board, t ≤ 10sec.
N-Channel ISD ≤ 4.7A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
N-Channel Starting TJ = 25°C, L = 6.5mH RG = 25Ω, IAS = 4.7A.
P-Channel Starting TJ = 25°C, L = 20mH RG = 25Ω, IAS = -3.4A.
2
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IRF7343QPbF
N-Channel
100
10
1
100
VGS
15V
12V
10V
8.0V
VGS
15V
12V
10V
8.0V
TOP
TOP
4.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
4.0V
3.5V
BOTTOM 3.0V
10
3.0V
3.0V
20µs PULSE WIDTH
°
T = 25 C
J
20µs PULSE WIDTH
°
T = 150 C
J
1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
100
10
1
°
T = 25 C
J
°
T = 150 C
J
°
T = 150 C
J
°
T = 25 C
J
V
= 25V
DS
V
= 0 V
20µs PULSE WIDTH
GS
0.1
0.2
3
4
5 6
0.5
0.8
1.1
1.4
V
, Gate-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
GS
SD
Fig 4. Typical Source-Drain Diode
Fig 3. Typical Transfer Characteristics
Forward Voltage
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3
IRF7343QPbF
N-Channel
2.5
0.120
4.7A
=
I
D
2.0
1.5
1.0
0.5
0.0
0.100
0.080
0.060
0.040
VGS = 4.5V
VGS = 10V
V
=10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
0
10
20
30
40
T , Junction Temperature ( C)
J
I
, Drain Current (A)
D
Fig 6. Typical On-Resistance Vs. Drain
Fig 5. Normalized On-Resistance
Current
Vs. Temperature
0.12
0.10
0.08
0.06
0.04
200
I
D
TOP
2.1A
3.8A
160
120
80
40
0
BOTTOM 4.7A
I
= 4.7A
D
A
0
2
4
6
8
10
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
VGS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Fig 8. Maximum Avalanche Energy
Voltage
Vs. Drain Current
4
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IRF7343QPbF
N-Channel
1200
1000
800
600
400
200
0
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
I =
4.5A
D
C
= C + C
iss
gs
gd ,
V
V
V
= 48V
= 30V
= 12V
DS
DS
DS
C
= C
rss
gd
C
= C + C
oss
ds
gd
C
iss
C
oss
4
C
rss
0
0
10
20
30
40
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7343QPbF
P-Channel
100
100
VGS
VGS
-15V
-12V
-10V
-8.0V
TOP
TOP
-15V
-12V
-10V
-8.0V
-4.5V
-4.5V
-4.0V
-4.0V
-3.5V
-3.5V
BOTTOM-3.0V
BOTTOM -3.0V
10
10
-3.0V
-3.0V
1
1
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 150 C
J
°
T = 25 C
J
0.1
0.1
0.1
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 12. Typical Output Characteristics
Fig 13. Typical Output Characteristics
100
10
100
°
T = 25 C
J
°
T = 150 C
J
°
T = 150 C
J
10
°
T = 25 C
J
1
V
= -25V
DS
V
= 0 V
GS
1.2
20µs PULSE WIDTH
0.1
0.2
1
0.4
0.6
0.8
1.0
1.4
3
4
5
6 7
-V ,Source-to-Drain Voltage (V)
SD
-V , Gate-to-Source Voltage (V)
GS
Fig 14. Typical Transfer Characteristics
Fig 15. Typical Source-Drain Diode
ForwardVoltage
6
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IRF7343QPbF
P-Channel
2.0
1.5
1.0
0.5
0.0
0.240
-3.4 A
=
I
D
0.200
0.160
0.120
0.080
VGS = -4.5V
VGS = -10V
V
=-10V
GS
0
2
4
6
8
10
12
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-I , Drain Current (A)
T , Junction Temperature ( C)
J
D
Fig 17. Typical On-Resistance Vs. Drain
Fig 16. Normalized On-Resistance
Current
Vs.Temperature
0.45
300
I
D
TOP
-1.5A
-2.7A
250
200
150
100
50
BOTTOM -3.4A
0.35
0.25
0.15
0.05
I
= -3.4 A
D
0
A
25
50
75
100
125
150
2
5
8
11
14
°
Starting T , Junction Temperature ( C)
J
-VGS , Gate-to-Source Voltage (V)
Fig 18. Typical On-Resistance Vs. Gate
Fig 19. Maximum Avalanche Energy
Voltage
Vs. Drain Current
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IRF7343QPbF
P-Channel
1200
20
16
12
8
V
= 0V,
f = 1MHz
gd , ds
I
D
=
-3.1A
GS
V
V
V
=-48V
=-30V
=-12V
C
= C + C
C
SHORTED
DS
DS
DS
iss
gs
C
= C
gd
rss
C
= C + C
ds
960
720
480
240
0
oss
gd
C
iss
C
C
oss
4
rss
0
1
10
100
0
10
20
30
40
-V , Drain-to-Source Voltage (V)
DS
Q
, Total Gate Charge (nC)
G
Fig 21. Typical Gate Charge Vs.
Fig 20. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
D = 0.50
0.20
0.10
0.05
10
0.02
0.01
P
2
DM
1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig22. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
8
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IRF7343QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
IRF7343QPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2007
10
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