IRF7379IPBF [INFINEON]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET![IRF7379IPBF](http://pdffile.icpdf.com/pdf1/p00103/img/icpdf/IRF7379IPBF_557490_icpdf.jpg)
型号: | IRF7379IPBF |
厂家: | ![]() |
描述: | HEXFET㈢ Power MOSFET |
文件: | 总10页 (文件大小:202K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
PD - 96089
IRF7379IPbF
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Complimentary Half Bridge
l Surface Mount
l Fully Avalanche Rated
l Lead-Free
N-CHANNEL MOSFET
N-Ch P-Ch
1
8
D
D
S1
G1
2
7
VDSS 30V -30V
3
4
6
5
S2
G2
D
D
P-CHANNEL MOSFET
R
DS(on) 0.045Ω 0.090Ω
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. Withtheseimprovements,multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
SO-8
Absolute Maximum Ratings
Max.
Parameter
Units
N-Channel
P-Channel
VSD
Drain-to-Source Voltage
30
5.8
4.6
46
-30
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
-4.3
A
-3.4
-34
W
PD @TA = 25°C
2.5
Linear Derating Factor
0.02
± 20
W/°C
V
VGS
Gate-to-Source Voltage
dv/dt
Peak Diode Recovery dv/dt
5.0
-5.0
V/ns
°C
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance Ratings
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
50
°C/W
www.irf.com
1
07/07/06
IRF7379IPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
N-Ch 30
P-Ch -30
—
—
—
—
—
—
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 5.8A
V(BR)DSS
Drain-to-SourceBreakdownVoltage
V
N-Ch
P-Ch
—
—
—
—
—
—
0.032
-0.037
0.038 0.045
0.055 0.075
0.070 0.090
0.130 0.180
—
—
—
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V/°C
N-Ch
P-Ch
V
GS = 4.5V, ID = 4.9A
RDS(ON)
Static Drain-to-Source On-Resistance
Ω
VGS = -10V, ID =- 4.3A
VGS = -4.5V, ID =- 3.7A
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 15V, ID = 2.4A
VDS = -24V, ID = -1.8A
N-Ch 1.0
P-Ch -1.0
N-Ch 5.2
P-Ch 2.5
—
—
—
VGS(th)
gfs
Gate Threshold Voltage
V
S
ForwardTransconductance
—
—
N-Ch
P-Ch
N-Ch
P-Ch
—
—
—
—
—
—
—
—
—
—
—
—
1.0
-1.0
25
-25
±100
25
25
2.9
2.9
7.9
9.0
—
—
—
—
—
—
—
—
—
V
DS = 24 V, VGS = 0V
VDS = -24V, VGS = 0V
VDS = 24 V, VGS = 0V, TJ = 125°C
IDSS
Drain-to-SourceLeakageCurrent
µA
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = ± 20V
IGSS
Qg
Gate-to-SourceForwardLeakage
Total Gate Charge
N-P ––
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
N-Channel
ID = 2.4A, VDS = 24V, VGS = 10V
Qgs
Qgd
td(on)
tr
Gate-to-SourceCharge
Gate-to-Drain("Miller")Charge
Turn-OnDelayTime
RiseTime
nC
—
—
—
P-Channel
ID = -1.8A, VDS = -24V, VGS = -10V
6.8
11
21
17
22
25
7.7
18
4.0
6.0
520
440
180
200
72
93
N-Channel
VDD = 15V, ID = 2.4A, RG = 6.0Ω,
RD = 6.2Ω
ns
td(off)
tf
Turn-OffDelayTime
FallTime
P-Channel
VDD = -15V, ID = -1.8A, RG = 6.0Ω,
RD = 8.2Ω
LD
LS
Internal Drain Inductace
Internal Source Inductance
Between lead, 6mm (0.25in.) from
package and center of die contact
nH
pF
N-P
—
—
—
—
—
—
—
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Ciss
Coss
Crss
Input Capacitance
N-Channel
VGS = 0V, VDS = 25V, ƒ = 1.0MHz
Output Capacitance
P-Channel
VGS = 0V, VDS = -25V, ƒ = 1.0MHz
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
N-Ch
Min. Typ. Max. Units
Conditions
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
47
53
56
66
3.1
-3.1
46
-34
1.0
-1.0
71
80
84
99
IS
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
DiodeForwardVoltage
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
A
ISM
VSD
TJ = 25°C, IS = 1.8A, VGS = 0V
TJ = 25°C, IS = -1.8A, VGS = 0V
N-Channel
TJ = 25°C, IF = 2.4A, di/dt = 100A/µs
P-Channel
V
ns
nC
trr
ReverseRecoveryTime
Qrr
ReverseRecoveryCharge
T
J = 25°C, IF = -1.8A, di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 10 )
N-Channel ISD ≤ 2.4A, di/dt ≤ 73A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Surface mounted on FR-4 board, t ≤ 10sec.
2
www.irf.com
IRF7379IPbF
N-Channel
1000
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
100
4.5V
4.5V
10
20µs PULSE WIDTH
20µs PULSE WIDTH
T
J
= 25°C
T
J
= 150°C
A
1
1
0.1
A
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
100
10
1
T = 25°C
J
T = 150°C
J
T = 150°C
J
T = 25°C
J
VDS = 15V
20µs PULSE WIDTH
V
= 0V
GS
A
0.1
10
10A
0.0
0.5
1.0
1.5
2.0
2.5
4
5
6
7
8
9
V
, Source-to-Drain Voltage (V)
VGS , Gate-to-Source Voltage (V)
SD
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Source-Drain Diode
Forward Voltage
www.irf.com
3
IRF7379IPbF
N-Channel
2.0
0.20
I
= 4.0A
D
0.16
0.12
0.08
0.04
0.00
1.5
1.0
0.5
0.0
VGS = 4.5V
VGS = 10V
V
= 10V
GS
A
-60 -40 -20
0
20 40 60 80 100 120 140 160
2
4
6
8
10
I
, Drain Current (A)
T , Junction Temperature (°C)
D
J
Fig 6. Typical On-Resistance Vs. Drain
Fig 5. Normalized On-Resistance
Current
Vs.Temperature
0.08
0.07
0.06
0.05
0.04
0.03
ID = 5.8A
0
4
8
12
16
V
, Gate-to-Source Voltage (V)
GS
Fig 7. Typical On-Resistance Vs. Gate
Voltage
4
www.irf.com
IRF7379IPbF
N-Channel
1000
800
600
400
200
0
20
V
C
C
C
= 0V,
f = 1MHz
I
V
= 2.4A
= 24V
GS
iss
rss
oss
D
DS
= C + C
,
C
SHORTED
gs
gd
ds
= C
gd
= C + C
ds
gd
16
12
8
C
C
iss
oss
4
C
rss
0
A
A
1
10
100
0
5
10
15
20
25
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 8. Typical Capacitance Vs.
Fig 9. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
Notes:
SINGLE PULSE
(THERMAL RESPONSE)
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
10
DM
thJA
A
0.1
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRF7379IPbF
P-Channel
100
100
VGS
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
TOP
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
TOP
BOTTOM - 4.5V
BOTTOM - 4.5V
10
-4.5V
10
-4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
J
= 25°C
T
J
= 150°C
A
100
1
1
0.1
A
0.1
1
10
1
10
100
-V , Drain-to-Source Voltage (V)
-V , Drain-to-Source Voltage (V)
DS
DS
Fig 11. Typical Output Characteristics
Fig 12. Typical Output Characteristics
100
100
10
1
TJ = 25°C
TJ = 150°C
T = 150°C
J
10
T = 25°C
J
VDS = -15V
20µs PULSE WIDTH
V
= 0V
GS
1
A
0.1
10A
4
5
6
7
8
9
0.0
0.3
0.6
0.9
1.2
1.5
-VGS , Gate-to-Source Voltage (V)
-V , Source-to-Drain Voltage (V)
SD
Fig 13. Typical Transfer Characteristics
Fig 14. Typical Source-Drain Diode
Forward Voltage
6
www.irf.com
IRF7379IPbF
P-Channel
0.50
0.40
0.30
0.20
0.10
0.00
2.0
1.5
1.0
0.5
0.0
I
= -3.0A
D
VGS = -4.5V
VGS = -10V
V
= -10V
GS
A
0
2
4
6
8
10
12
14
-60 -40 -20
0
20 40 60 80 100 120 140 160
-I , Drain Current (A)
D
T
J
, Junction Temperature (°C)
Fig 16. Typical On-Resistance Vs. Drain
Fig 15. Normalized On-Resistance
Current
Vs.Temperature
0.16
0.14
0.12
0.10
0.08
0.06
ID = -4.3A
0
4
8
12
16
-V
GS
, Gate-to-Source Voltage (V)
Fig 17. Typical On-Resistance Vs. Gate
Voltage
www.irf.com
7
IRF7379IPbF
P-Channel
1000
20
I
V
= -3.0A
= -24V
V
C
C
C
= 0V,
f = 1MHz
D
DS
GS
iss
rss
oss
= C + C
,
C
SHORTED
gs
gd
gd
ds
= C
= C + C
800
600
400
200
0
16
12
8
ds
gd
C
C
iss
oss
4
C
rss
0
A
A
0
5
10
15
20
25
1
10
100
-
Q , Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
G
DS
Fig 19. Typical Gate Charge Vs.
Fig 18. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
D = 0.50
0.20
0.10
0.05
10
P
2
DM
0.02
0.01
1
t
1
t
2
Notes:
SINGLE PULSE
(THERMAL RESPONSE)
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
10
DM
thJA
A
0.1
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
8
www.irf.com
IRF7379IPbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
www.irf.com
9
IRF7379IPbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/2006
10
www.irf.com
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00265/img/page/IRF7379TR_1594479_files/IRF7379TR_1594479_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00265/img/page/IRF7379TR_1594479_files/IRF7379TR_1594479_2.jpg)
IRF7379TR
Power Field-Effect Transistor, 5.8A I(D), 30V, 0.045ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00263/img/page/IRFC40LC-024_1583042_files/IRFC40LC-024_1583042_1.jpg)
IRF737LC-002
Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00263/img/page/IRFC40LC-024_1583042_files/IRFC40LC-024_1583042_1.jpg)
IRF737LC-002PBF
Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00263/img/page/IRFC40LC-024_1583042_files/IRFC40LC-024_1583042_1.jpg)
IRF737LC-003
Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00263/img/page/IRFC40LC-024_1583042_files/IRFC40LC-024_1583042_1.jpg)
IRF737LC-003PBF
Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00263/img/page/IRFC40LC-024_1583042_files/IRFC40LC-024_1583042_1.jpg)
IRF737LC-004
Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00263/img/page/IRFC40LC-024_1583042_files/IRFC40LC-024_1583042_1.jpg)
IRF737LC-004PBF
Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00263/img/page/IRFC40LC-024_1583042_files/IRFC40LC-024_1583042_1.jpg)
IRF737LC-005
Power Field-Effect Transistor, 6.1A I(D), 300V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
INFINEON
©2020 ICPDF网 联系我们和版权申明