IRF7380QPBF [INFINEON]
HEXFET㈢Power MOSFET; HEXFET㈢Power MOSFET
| 型号： | IRF7380QPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢Power MOSFET |
| 文件： | 总8页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96132
IRF7380QPbF
HEXFET® Power MOSFET
l
l
l
l
l
l
l
l
Advanced Process Technology
UltraLowOn-Resistance
NChannelMOSFET
VDSS
80V
RDS(on) max
ID
73m @VGS = 10V
2.2A
SurfaceMount
Available in Tape & Reel
150°COperatingTemperature
Automotive [Q101] Qualified
Lead-Free
1
2
3
4
8
S1
G1
D1
7
Description
D1
SpecificallydesignedforAutomotiveapplications.Additional
features of these Automotive qualified HEXFET Power
MOSFET's are a 150°C junction operating temperature,
fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an
extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics making it ideal in a variety of power
applications. This surface mount SO-8 can dramatically
reduce board space and is also available in Tape & Reel.
6
S2
D2
5
G2
D2
SO-8
Top View
Absolute Maximum Ratings
Parameter
Max.
80
Units
V
VDS
VGS
Drain-to-Source Voltage
Gate-to-Source Voltage
± 20
3.6
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
@ T = 25°C
A
D
D
@ T = 100°C
A
2.9
29
A
DM
P
@T = 25°C
A
Maximum Power Dissipation
Linear Derating Factor
2.0
W
D
0.02
2.3
-55 to + 150
W/°C
dv/dt
T
J
Peak Diode Recovery dv/dt
Operating Junction and
V/ns
°C
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount) *
Typ.
–––
Max.
20
Units
°C/W
RθJL
RθJA
–––
50
Notes through are on page 8
www.irf.com
1
09/14/07
IRF7380QPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
Drain-to-Source Breakdown Voltage
80
–––
0.09
61
–––
V
VGS = 0V, ID = 250µA
Breakdown Voltage Temp. Coefficient –––
––– V/°C Reference to 25°C, ID = 1mA
Ω
m
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
73
4.0
V
GS = 10V, ID = 2.2A
VDS = VGS, ID = 250µA
DS = 80V, VGS = 0V
VDS = 64V, VGS = 0V, TJ = 125°C
GS = 20V
VGS = -20V
VGS(th)
–––
–––
–––
–––
–––
V
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
20
µA
V
250
200
-200
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 25V, ID = 2.2A
gfs
4.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
Qg
15
23
ID = 2.2A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
2.9
4.5
9.0
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC VDS = 40V
VGS = 10V
VDD = 40V
ID = 2.2A
td(off)
tf
Turn-Off Delay Time
Fall Time
41
ns RG = 24Ω
VGS = 10V
17
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
660
110
15
VGS = 0V
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
V
DS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 64V, ƒ = 1.0MHz
710
72
140
V
GS = 0V, VDS = 0V to 64V
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
75
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
Avalanche Current
2.2
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
I
I
Continuous Source Current
–––
–––
3.6
A
A
V
MOSFET symbol
S
(Body Diode)
Pulsed Source Current
showing the
integral reverse
G
–––
–––
29
SM
S
(Body Diode)
Diode Forward Voltage
p-n junction diode.
T = 25°C, I = 2.2A, V = 0V
J S GS
V
t
–––
–––
–––
–––
50
1.3
–––
–––
SD
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 2.2A, VDD = 40V
J F
rr
di/dt = 100A/µs
Q
t
110
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
2
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IRF7380QPbF
100
10
1
100
10
VGS
15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
3.7V
VGS
15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
3.7V
TOP
TOP
BOTTOM
BOTTOM
1
3.7V
0.1
3.7V
0.01
0.001
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
2.5
3.6A
=
I
D
2.0
1.5
1.0
0.5
0.0
T
= 150°C
J
T
= 25°C
V
J
1
0
= 15V
DS
20µs PULSE WIDTH
V
= 10V
GS
-60 -40 -20
0
20
40
60
80 100 120 140 160
3.0
4.0
5.0
6.0
7.0
TJ, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7380QPbF
12
10
8
100000
V
C
= 0V,
f = 1 MHZ
GS
I = 2.1A
D
= C + C , C SHORTED
V
V
V
= 64V
= 40V
= 16V
iss
gs gd ds
DS
DS
DS
C
= C
gd
rss
10000
1000
100
10
C
= C + C
oss
ds gd
C
iss
6
C
oss
4
C
rss
2
1
0
1
10
100
0
2
4
6
8
10 12 14 16
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
10
°
T = 25
C
J
100µsec
1msec
°
T = 150
C
J
1
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
100
V
= 0 V
GS
0.1
0.1
0.0
0.5
1.0
1.5
2.0
1
10
1000
VSD, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7380QPbF
4.0
3.0
2.0
1.0
0.0
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
TA , Ambient Temperature (°C)
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Ambient Temperature
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
0.02
0.01
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
10
J
DM
thJA
A
0.1
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF7380QPbF
95
90
85
80
800
700
600
500
400
300
200
100
0
V
= 10V
GS
75
70
65
60
55
50
I
= 3.6A
D
0
5
10
15
20
25
30
3.0
5.0
7.0
9.0
11.0
13.0
15.0
I
, Drain Current (A)
V
Gate -to -Source Voltage (V)
D
GS,
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
+
V
200
DS
D.U.T.
-
V
I
G
D
V
GS
TOP
1.0A
1.8A
2.2A
3mA
Charge
160
120
80
40
0
BOTTOM
I
I
D
G
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
25
50
75
100
125
150
20V
Ω
0.01
t
p
Starting TJ, Junction Temperature (°C)
I
AS
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF7380QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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7
IRF7380QPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 31mH
RG = 25Ω, IAS = 2.2A.
When mounted on 1 inch square copper board.
ꢀ Coss eff. is a fixed capacitance that gives the same charging time as
Coss while VDS is rising from 0 to 80% VDSS.
ISD ≤ 2.2A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS,TJ ≤ 150°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/2007
8
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相关型号：
IRF7389PBF-1
Power Field-Effect Transistor, 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
INFINEON
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