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IRF7406PBF [INFINEON]

HEXFET㈢Power MOSFET; HEXFET㈢Power MOSFET
IRF7406PBF
型号： IRF7406PBF
厂家： Infineon    Infineon
描述：

HEXFET㈢Power MOSFET
HEXFET㈢Power MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管
文件： 总9页 (文件大小：235K)
中文：  中文翻译
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PD - 95302  
IRF7406PbF  
HEXFET® Power MOSFET  
l Generation V Technology  
l Ultra Low On-Resistance  
l P-Channel Mosfet  
l Surface Mount  
A
D
1
2
8
S
S
VDSS = -30V  
7
D
l Available in Tape & Reel  
l Dynamic dv/dt Rating  
l Fast Switching  
3
4
6
S
G
D
5
D
RDS(on) = 0.045Ω  
l Lead-Free  
Top View  
Description  
Fifth Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve  
the lowest possible on-resistance per silicon area.  
This benefit, combined with the fast switching speed  
and ruggedized device design that HEXFET Power  
MOSFETs are well known for, provides the designer  
with an extremely efficient device for use in a wide  
variety of applications.  
The SO-8 has been modified through a customized  
leadframe for enhanced thermal characteristics and  
multiple-die capability making it ideal in a variety of  
power applications. With these improvements,  
multiple devices can be used in an application with  
dramatically reduced board space. The package is  
designed for vapor phase, infra red, or wave soldering  
techniques. Power dissipation of greater than 0.8W  
is possible in a typical PCB mount application.  
SO-8  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TA = 25°C  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
10 Sec. Pulsed Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Pulsed Drain Current   
-6.7  
-5.8  
A
-3.7  
-23  
PD @TA = 25°C  
Power Dissipation  
2.5  
W
W/°C  
V
Linear Derating Factor  
0.02  
VGS  
Gate-to-Source Voltage  
± 20  
dv/dt  
TJ,TSTG  
Peak Diode Recovery dv/dt ‚  
Junction and Storage Temperature Range  
-5.0  
V/ns  
°C  
-55 to + 150  
Thermal Resistance Ratings  
Parameter  
Typ.  
Max.  
Units  
RθJA  
Maximum Junction-to-Ambient„  
–––  
50  
°C/W  
www.irf.com  
1
10/7/04  
IRF7406PbF  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
-30 ––– –––  
Conditions  
VGS = 0V, ID = -250µA  
V(BR)DSS  
Drain-to-Source Breakdown Voltage  
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.020 ––– V/°C Reference to 25°C, ID = -1mA  
––– ––– 0.045  
––– ––– 0.070  
-1.0 ––– –––  
3.1 ––– –––  
––– ––– -1.0  
––– ––– -25  
––– ––– -100  
––– ––– 100  
––– ––– 59  
––– ––– 5.7  
––– ––– 21  
––– 16 –––  
––– 33 –––  
––– 45 –––  
––– 47 –––  
VGS = -10V, ID = -2.8A ƒ  
VGS = -4.5V, ID = -2.4A ƒ  
VDS = VGS, ID = -250µA  
VDS = -15V, ID = -2.8A  
VDS = -24V, VGS = 0V  
VDS = -24V, VGS = 0V, TJ = 125°C  
VGS = -20V  
RDS(ON)  
Static Drain-to-Source On-Resistance  
Ω
VGS(th)  
gfs  
Gate Threshold Voltage  
V
S
Forward Transconductance  
µA  
nA  
IDSS  
IGSS  
Drain-to-Source Leakage Current  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Total Gate Charge  
VGS = 20V  
Qg  
ID = -2.8A  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
nC VDS = -2.4V  
VGS = -10V, See Fig. 6 and 12 ƒ  
VDD = -15V  
RiseTime  
ID = -2.8A  
ns  
td(off)  
tf  
Turn-Off Delay Time  
FallTime  
RG = 6.0Ω  
RD = 5.3Ω, See Fig. 10 ƒ  
D
S
LD  
LS  
Internal Drain Inductance  
Internal Source Inductance  
––– 2.5 –––  
––– 4.0 –––  
Between lead tip  
nH  
pF  
G
and center of die contact  
Ciss  
Coss  
Crss  
Input Capacitance  
––– 1100 –––  
––– 490 –––  
––– 220 –––  
VGS = 0V  
Output Capacitance  
VDS = -25V  
Reverse Transfer Capacitance  
ƒ = 1.0MHz, See Fig. 5  
Source-Drain Ratings and Characteristics  
Parameter  
Continuous Source Current  
(Body Diode)  
Min. Typ. Max. Units  
Conditions  
MOSFETsymbol  
D
S
IS  
––– ––– -3.1  
A
showing the  
G
ISM  
Pulsed Source Current  
(Body Diode)   
integral reverse  
––– ––– -23  
p-n junction diode.  
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
Forward Turn-On Time  
––– ––– -1.0  
V
TJ = 25°C, IS = -2.0A, VGS = 0V ƒ  
––– 42  
––– 64  
63  
96  
ns  
TJ = 25°C, IF = -2.8A  
Qrr  
ton  
nC di/dt = 100A/µs ƒ  
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  
Notes:  
 Repetitive rating; pulse width limited by  
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.  
max. junction temperature. ( See fig. 11 )  
‚ ISD ≤ -2.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS  
TJ ≤ 150°C  
,
„ Surface mounted on FR-4 board, t ≤ 10sec.  
2
www.irf.com  
IRF7406PbF  
1000  
100  
10  
1000  
100  
10  
VGS  
- 15V  
- 10V  
- 8.0V  
- 7.0V  
- 6.0V  
- 5.5V  
- 5.0V  
VGS  
- 15V  
- 10V  
- 8.0V  
- 7.0V  
- 6.0V  
- 5.5V  
- 5.0V  
TOP  
TOP  
BOTTOM - 4.5V  
BOTTOM - 4.5V  
-4.5V  
-4.5V  
20µs PULSE WIDTH  
20µs PULSE WIDTH  
T
J
= 25°C  
T
J
= 150°C  
A
1
1
0.1  
A
0.1  
1
10  
100  
1
10  
100  
-V , Drain-to-Source Voltage (V)  
DS  
-V , Drain-to-Source Voltage (V)  
DS  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
1000  
2.0  
1.5  
1.0  
0.5  
0.0  
I
= -4.7A  
D
T = 25°C  
J
100  
TJ = 150°C  
VDS = -15V  
20µs PULSE WIDTH  
V
= -10V  
GS  
10  
A
10 A  
4
5
6
7
8
9
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
-VGS , Gate-to-Source Voltage (V)  
T
, Junction Temperature (°C)  
J
Fig 4. Normalized On-Resistance  
Fig 3. Typical Transfer Characteristics  
Vs.Temperature  
www.irf.com  
3
IRF7406PbF  
2500  
20  
16  
12  
8
V
C
C
C
= 0V,  
f = 1MHz  
I
V
= -2.8A  
D
DS  
GS  
iss  
rss  
oss  
= C + C  
,
C
SHORTED  
= -24V  
gs  
gd  
gd  
ds  
= C  
= C + C  
ds  
gd  
2000  
1500  
1000  
500  
0
C
iss  
C
oss  
C
rss  
4
FOR TEST CIRCUIT  
SEE FIGURE 12  
0
A
A
1
10  
100  
0
20  
40  
60  
-V , Drain-to-Source Voltage (V)  
Q , Total Gate Charge (nC)  
DS  
G
Fig 6. Typical Gate Charge Vs.  
Fig 5. Typical Capacitance Vs.  
Gate-to-SourceVoltage  
Drain-to-SourceVoltage  
100  
10  
1
100  
10  
1
OPERATION IN THIS AREA LIMITED  
BY R  
DS(on)  
100us  
T = 150°C  
J
T = 25°C  
J
1ms  
10ms  
°
T = 25 C  
A
J
°
T = 150 C  
Single Pulse  
V
GS  
= 0V  
A
0.1  
0.1  
1
10  
100  
0.3  
0.6  
0.9  
1.2  
-V , Drain-to-Source Voltage (V)  
DS  
-V , Source-to-Drain Voltage (V)  
SD  
Fig 8. Maximum Safe Operating Area  
Fig 7. Typical Source-Drain Diode  
ForwardVoltage  
4
www.irf.com  
IRF7406PbF  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
RD  
VDS  
VGS  
D.U.T.  
RG  
-
+ VDD  
-10V  
PulseWidth ≤ 1 µs  
Duty Factor≤ 0.1 %  
Fig 10a. Switching Time Test Circuit  
V
DS  
90%  
25  
50  
75  
100  
125  
150  
°
T , Case Temperature ( C)  
C
10%  
V
GS  
Fig 9. Maximum Drain Current Vs.  
t
t
r
t
t
f
d(on)  
d(off)  
AmbientTemperature  
Fig 10b. Switching Time Waveforms  
100  
10  
1
D = 0.50  
0.20  
0.10  
0.05  
P
2
DM  
0.02  
0.01  
t
1
t
2
SINGLE PULSE  
(THERMAL RESPONSE)  
Notes:  
1. Duty factor D =  
t / t  
1
2. Peak T = P  
J
x Z  
+ T  
A
DM  
thJA  
0.1  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
t , Rectangular Pulse Duration (sec)  
1
www.irf.com  
5
IRF7406PbF  
Current Regulator  
Same Type as D.U.T.  
50KΩ  
.2µF  
.3µF  
12V  
Q
G
-
-10V  
V
+
DS  
D.U.T.  
Q
Q
GD  
GS  
V
GS  
V
G
-3mA  
I
I
D
G
Current Sampling Resistors  
Charge  
Fig 12a. Basic Gate Charge Waveform  
Fig 12b. Gate Charge Test Circuit  
6
www.irf.com  
IRF7406PbF  
Peak Diode Recovery dv/dt Test Circuit  
+
ƒ
-
Circuit Layout Considerations  
• Low Stray Inductance  
• Ground Plane  
• Low Leakage Inductance  
Current Transformer  
D.U.T  
+
‚
-
„
-
+
**  

RG  
• dv/dt controlled by RG  
• ISD controlled by Duty Factor "D"  
• D.U.T. - Device Under Test  
+
-
*
VDD  
VGS  
*
* Reverse Polarity for P-Channel  
** Use P-Channel Driver for P-Channel Measurements  
Driver Gate Drive  
P.W.  
Period  
Period  
D =  
P.W.  
V
[
=10V  
] ***  
GS  
D.U.T. I Waveform  
SD  
Reverse  
Recovery  
Current  
Body Diode Forward  
Current  
di/dt  
D.U.T. V Waveform  
DS  
Diode Recovery  
dv/dt  
V
[
DD  
]
Re-Applied  
Voltage  
Body Diode  
Forward Drop  
Inductor Curent  
I
[
]
SD  
Ripple ≤ 5%  
*** VGS = 5.0V for Logic Level and 3V Drive Devices  
Fig13. ForP-ChannelHEXFETS  
www.irf.com  
7
IRF7406  
PbF  
SO-8 Package Outline  
Dimensions are shown in milimeters (inches)  
INCHES  
MILLIMETERS  
DIM  
A
D
B
MIN  
.0532  
MAX  
.0688  
.0098  
.020  
MIN  
1.35  
0.10  
0.33  
0.19  
4.80  
3.80  
MAX  
1.75  
0.25  
0.51  
0.25  
5.00  
4.00  
5
A
E
A1 .0040  
b
c
D
E
.013  
8
1
7
2
6
3
5
.0075  
.189  
.0098  
.1968  
.1574  
6
H
0.25 [.010]  
A
.1497  
4
e
.050 BASIC  
1.27 BASIC  
0.635 BASIC  
e1 .025 BASIC  
H
K
L
.2284  
.0099  
.016  
0°  
.2440  
.0196  
.050  
8°  
5.80  
0.25  
0.40  
0°  
6.20  
0.50  
1.27  
8°  
e
6X  
y
e1  
A
K x 45°  
A
C
y
0.10 [.004]  
8X c  
A1  
B
8X L  
8X b  
0.25 [.010]  
7
C
F OOT PR INT  
8X 0.72 [.028]  
NOT ES :  
1. DIMENSIONING& TOLERANCING PER ASME Y14.5M-1994.  
2. CONTROLLING DIMENSION: MILLIMETER  
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].  
4. OUT L INE CONF OR MS T O JEDE C OU T L INE MS -012AA.  
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.  
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].  
6.46 [.255]  
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.  
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].  
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO  
ASUBSTRATE.  
3X 1.27 [.050]  
8X 1.78 [.070]  
SO-8 Part Marking Information (Lead-Free)  
EXAMPLE: THIS IS AN IRF7101 (MOSFET)  
DAT E CODE (YWW)  
P = DE S IGNAT E S L E AD-F RE E  
PRODUCT (OPTIONAL)  
Y = LAST DIGIT OF THE YEAR  
WW = WE E K  
XXXX  
F7101  
INTERNATIONAL  
RECTIFIER  
LOGO  
A = AS S E MB LY S IT E CODE  
LOT CODE  
PART NUMBER  
8
www.irf.com  
IRF7406PbF  
SO-8 Tape and Reel  
Dimensions are shown in milimeters (inches)  
TERMINAL NUMBER 1  
12.3 ( .484 )  
11.7 ( .461 )  
8.1 ( .318 )  
7.9 ( .312 )  
FEED DIRECTION  
NOTES:  
1. CONTROLLING DIMENSION : MILLIMETER.  
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).  
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
330.00  
(12.992)  
MAX.  
14.40 ( .566 )  
12.40 ( .488 )  
NOTES :  
1. CONTROLLING DIMENSION : MILLIMETER.  
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
Data and specifications subject to change without notice.  
This product has been designed and qualified for the Consumer market.  
Qualifications Standards can be found on IR’s Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.10/04  
www.irf.com  
9

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