IRF7413A [INFINEON]
Power MOSFET(Vdss=30V, Rds(on)=0.0135ohm); 功率MOSFET （ VDSS = 30V ， RDS（ON） = 0.0135ohm ）
| 型号： | IRF7413A |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=30V, Rds(on)=0.0135ohm) |
| 文件： | 总9页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1613A
IRF7413A
PRELIMINARY
HEXFET® Power MOSFET
A
l Generation V Technology
l Ultra Low On-Resistance
l N-Channel Mosfet
A
1
2
3
4
8
S
S
D
7
VDSS = 30V
D
l Surface Mount
6
5
S
D
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
G
D
RDS(on) = 0.0135Ω
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
knownfor, providesthedesignerwithanextremelyefficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
SO-8
Absolute Maximum Ratings
Parameter
Max.
12
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
8.4
A
58
PD @TA = 25°C
Power Dissipation
2.5
W
mW/°C
V
Linear Derating Factor
0.02
± 20
260
5.0
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
mJ
dv/dt
TJ,TSTG
V/ns
°C
-55 to + 150
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
–––
50
°C/W
8/25/97
IRF7413A
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 ––– –––
––– 0.034 ––– V/°C Reference to 25°C, ID = 1mAꢀ
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– ––– 0.0135
––– ––– 0.020
1.0 ––– –––
10 ––– –––
––– ––– 1.0
––– ––– 25
––– ––– -100
––– ––– 100
VGS = 10V, ID = 6.6A
VGS = 4.5V, ID = 3.3A
VDS = VGS, ID = 250µA
VDS = 10V, ID = 3.7Aꢀ
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = -20V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
––– 52
––– 6.1 9.2
––– 16 23
79
ID = 7.3A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
ns
pF
VDS = 24V
VGS = 10 V, See Fig. 6 and 9 ꢀ
VDD = 15V
––– 8.6 –––
––– 50 –––
––– 52 –––
––– 46 –––
––– 1800 –––
––– 680 –––
––– 240 –––
ID = 7.3A
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.2Ω
RD = 2.0Ω, See Fig. 10 ꢀ
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
––– ––– 3.1
A
showing the
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 58
p-n junction diode.
TJ = 25°C, IS = 6.6A, VGS = 0V
TJ = 25°C, IF = 7.3A
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– 1.0
––– 74 110
––– 200 300
V
ns
Qrr
nC di/dt = 100A/µs ꢀ
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Use IRF7413 data and test conditions
Surface mounted on FR-4 board, t ≤ 10sec.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L =9.8mH
RG = 25Ω, IAS =7.3A. (See Figure 12)
ISD ≤ 7.3A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
IRF7413A
1 0 0
1 0
1
1 0 0
1 0
1
VGS
15V
VGS
T OP
TOP
15V
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOT TOM 3. 0V
BOTTOM 3.0V
3.0V
3.0V
20µs P ULSE WIDTH
= 25°C
20µs P ULSE WIDTH
= 150°C
T
J
T
J
A
A
0. 1
1
1 0
0. 1
1
1 0
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
D S
D S
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1 0 0
1 0
1
2. 0
1. 5
1. 0
0. 5
0. 0
I
= 7.3A
D
TJ = 1 50 °C
T
= 25°C
J
V
= 10V
D S
20µs PU LSE W ID TH
V
= 10V
GS
A
4. 5A
3. 0
3. 5
4. 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0
TJ , Junction Temperature (°C)
VG S , Ga te-to-So urce Voltage (V )
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
IRF7413A
3 2 0 0
2 0
1 6
1 2
8
V
C
C
C
= 0V ,
f = 1MH z
I
= 7.3A
D
GS
iss
= C
= C
= C
+ C
+ C
,
C
ds
SHORTED
gs
g d
ds
g d
V
V
= 24V
= 15V
DS
DS
2 8 0 0
2 4 0 0
2 0 0 0
1 6 0 0
1 2 0 0
8 0 0
rss
oss
C
C
iss
gd
o s s
C
rss
4
4 0 0
FOR TES T CIRCUIT
SEE FIGURE 9
0
0
A
A
1
1 0
1 0 0
0
1 0
2 0
3 0
4 0
5 0
6 0
VD S , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
1 0 0
1 0
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
= 25°C
J
T
= 150°C
J
100us
1ms
°
T = 25 C
A
J
10ms
°
T = 150 C
Single Pulse
V
= 0V
G S
1
0.1
A
1
10
100
0. 4
1. 2
2. 0
2. 8
3. 6
V
, Drain-to-Source Voltage (V)
DS
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
IRF7413A
RD
VDS
Q
G
VGS
10V
D.U.T.
Q
Q
GD
GS
RG
+ V
-
DD
V
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
V
DS
50KΩ
90%
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
10%
V
GS
V
GS
3mA
t
t
r
t
t
f
d(on)
d(off)
I
I
D
G
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF7413A
600
500
400
300
200
100
0
I
D
TOP
3.3A
6.0A
BOTTOM 7.3A
15 V
D R IV ER
L
V
D S
R
D .U .T
+
G
V
D D
-
I
A
A S
2 0V
0 .0 1
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
25
50
75
100
125
150
t
o
p
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
IRF7413A
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 13. For N-Channel HEXFETS
IRF7413A
Package Outline
SO8 Outline
Dimensions are shown in millimeters (inches)
INCHES
MILLIMETERS
DIM
D
MIN
MAX
MIN
MAX
1.75
5
-
B -
A
.0532
.0040
.014
.0688
.0098
.018
1.35
0.10
0.36
0.19
4.80
A1
B
0.25
0.46
0.25
4.98
3.99
8
1
7
6
3
5
4
5
H
E
A
-
-
0.25 (.010)
M
A
M
C
D
E
.0075
.189
.0098
.196
2
.150
.157
3.81
e
e
.050 BASIC
.025 BASIC
1.27 BASIC
K
x 45°
6X
e 1
e1
H
K
0.635 BASIC
θ
.2284
.011
0.16
0°
.2440
5.80
0.28
0.41
0°
6.20
0.48
1.27
8°
A
.019
.050
8°
-
C -
0.10 (.004)
6
C
8X
L
8X
A1
L
B
8X
θ
0.25 (.010)
M
C A S B S
R E C O M M E N D E D F O O T P R I N T
N O T E S :
1. DIMENSIONING AND TOLERANCING PER ANSI Y14. 5M-1982.
2. CONTROLLING DIMENSION INCH.
0.72 (.028
8X
)
:
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
6.46
(
.255
)
1. 78 (. 070)
8X
5
D I M E N S I O N D O E S N O T I N C L U D E M O L D P R O T R U S I O N S
MOLD PROTRUSIONS NOT TO EXCEED 0. 25 (. 006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO
A
SUBSTRATE..
6
1.27
(
.050
)
3X
Part Marking Information
SO8
EXAM PLE : THIS IS AN IRF7101
DATE CODE (YW W )
Y = LAST DIGIT OF THE YEAR
W W = W EEK
312
XXXX
INTERNATIONAL
RECTIFIER
LOGO
F7101
W AFER
LOT CODE
PART NUM BER
TOP
(LAST 4 DIGITS)
BOTTOM
IRF7413A
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
1.85 (.072)
1.65 (.065)
4.10 (.161 )
3.90 (.154 )
0.3 5 (.013)
0.2 5 (.010)
2.05 (.080)
TERM INATION
1.60 (.062)
1.50 (.059)
1.95 (.077)
NUMBER
1
5.55 (.218)
5.45 (.215)
12.30 (.484)
11.70 (.461)
1
5.30 (.208)
5.10 (.201)
2.60 (.102)
1.50 (.059)
8.10 (.318)
7.90 (.311)
FEED DIRECTION
2.20 (.086)
2.00 (.079)
6.50 (.255)
6.30 (.248)
15.40 (.607)
11.90 (.469)
13.2 0 (.519)
12.8 0 (.504)
2
50.00
(1.969)
M IN.
330.00
(13.000)
M AX.
18.40 (.724)
MAX
NOTES:
3
14.40 (.566)
12.40 (.448)
3
1
2
3
4
CONFORMS TO EIA-481-1
INC LU DES FLANGE DISTORTION @ OUTER EDGE
DIM ENSIONS MEASURED @ HUB
CONTROLLING DIM ENSION : M ETRIC
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97
相关型号：
IRF7413APBF
Power Field-Effect Transistor, 12A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
INFINEON
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