IRF7418PBF [INFINEON]

Power Field-Effect Transistor, 7.6A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8;


型号：	IRF7418PBF
厂家：	Infineon
描述：	Power Field-Effect Transistor, 7.6A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 局域网开关脉冲光电二极管晶体管
文件：	总7页 (文件大小：201K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD-95938

IRF7418PbF

HEXFET^®Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l N-Channel MOSFET

l Surface Mount

l Fully Avalanche Rated

l Lead-Free

V_DSS= 55V

R_DS(on)= 0.024Ω

Top View

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

powerapplications. Withtheseimprovements,multiple

devicescanbeusedinanapplicationwithdramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

SO-8

Absolute Maximum Ratings ( T_A= 25°C Unless Otherwise Noted)

Symbol

V_DS

V_GS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

± 20

7.6

T_A= 25°C

T_A= 70°C

Continuous Drain Currentꢀ

I_D

5.5

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

I_DM

I_S

3.0

T_A= 25°C

T_A= 70°C

2.5

1.6

Maximum Power Dissipation ꢀ

Single Pulse Avalanche Energy

Avalanche Current

E_AS

I_AR

230

4.6A

0.25

6.2

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

E_AR

V/ ns

°C

dv/dt

T_J,T_STG

-55 to + 150

Thermal Resistance Ratings

Parameter

Symbol

Limit

Units

Maximum Junction-to-Ambientꢀ

R_θJA

°C/W

11/9/04

IRF7418PbF

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V_GS= 0V, I_D= 250µA

V_(BR)DSS

Drain-to-Source Breakdown Voltage

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient 0.059 V/°C Reference to 25°C, I_D= 1mA

R_DS(on)

V_GS(th)

g_fs

Static Drain-to-Source On-Resistance 0.020 0.024

Ω

V_GS= 10V, I_D= 7.5A

V_DS= V_GS, I_D= 250µA

V_DS= 15V, I_D= 7.5A

V_DS= 16V, V_GS= 0V

V_DS= 16V, V_GS= 0V, T_J= 150°C

V_GS= 20V

Gate Threshold Voltage

2.0

4.0

Forward Transconductance

1.0

100

-100

I_DSS

Drain-to-Source Leakage Current

µA

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

I_GSS

V_GS= -20V

Q_g

7.0

I_D= 7.5A

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

nC V_DS= 30V

V_GS= 10V, See Fig. 6 and 9

11 = 3106VV

Gate-to-Drain ("Miller") Charge

Turn-On

Rise

Delay

Time

Delay

Time

3654

16I_D= 7.5A

t_d(off)

t_f

Turn-Off

Time

3654

_G=R6.2Ω

R_D= 30Ω, See Fig. 10

V_GS= 0V

Fall

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Time

C_iss

C_oss

C_rss

1400

450

170

V_DS= 25V

= 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

3.0

Conditions

MOSFETsymbol

showing the

I_S

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

0.72 1.0

157 235

T_J= 25°C, I_S= 2.1A, V_GS= 0V

T_J= 25°C, I_F= 2.1A

Q_rr

nC di/dt = 100A/µs

Notes:

Repetitive rating; pulse width limited by

I_SD≤ 5.1A, di/dt ≤ 140A/µs, V_DD≤ V_(BR)DSS

T_J≤ 150°C

max. junction temperature. ( See fig. 11 )

Starting T_J= 25°C, L = 18mH

R_G= 25Ω, I_AS= 5.1A.

Pulse width ≤ 300µs; duty cycle ≤ 2%.

ꢀ Surface mounted on FR-4 board, t ≤ 10sec.

IRF7418PbF

100

VGS

15V

VGS

15V

TOP

10V

8.0V

7.0V

6.0V

5.5V

5.0V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

4.5V

20µs PULSE WIDTH

T = 25°C

T_J= 25°C

= 150°C

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

100

T = 150°C

T_J= 25°C

T = 25°C

V_DS= 25V

20µs PULSE WIDTH

= 0V

0.1

_7.0A

4.0

4.5

5.0

5.5

6.0

6.5

0.4

0.6

0.8

1.0

1.2

V_GS, Gate-to-Source Voltage (V)

, Source-to-Drain Voltage (V)

Fig 4. Typical Source-Drain Diode

Fig 3. Typical Transfer Characteristics

Forward Voltage

IRF7418PbF

0.08

0.06

0.04

0.02

2.0

7.5A

1.5

1.0

0.5

0.0

= 6.0V

= 10V

-60 -40 -20

20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

I , Drain Current (A)

Fig 5. Normalized On-Resistance

Fig 6. Typical On-Resistance Vs. Drain

Vs. Temperature

Current

600

0.08

0.06

0.04

0.02

0.00

TOP

2.3A

4.1A

500

400

300

200

100

BOTTOM 5.1A

= 7.5A

100

125

150

Starting T , Junction Temperature ( C)

V_GS, Gate-to-Source Voltage (V)

Fig 7. Typical On-Resistance Vs. Gate

Fig 8. Maximum Avalanche Energy

Voltage

Vs. Drain Current

IRF7418PbF

2500

2000

1500

1000

500

= 0V,

f = 1MHz

iss

rss

oss

I = 7.5A

= 30V

= C + C

SHORTED

= C

= C + C

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 13

100

Q , Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 10. Typical Gate Charge Vs.

Fig 9. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

0.1

0.01

Notes:

1. Duty factor D = t / t

2. Peak T =P

x Z

+ T

thJA A

0.0001

0.001

0.01

0.1

100

1000

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

IRF7418PbF

SO-8 Package Outline

Dimensions are shown in milimeters (inches)

INCHES

MILLIMETERS

DIM

MIN

.0532

MAX

.0688

.0098

.020

MIN

1.35

0.10

0.33

0.19

4.80

3.80

MAX

1.75

0.25

0.51

0.25

5.00

4.00

A1 .0040

.013

.0075

.189

.0098

.1968

.1574

0.25 [.010]

.1497

.050 BASIC

1.27 BASIC

0.635 BASIC

e1 .025 BASIC

.2284

.0099

.016

0°

.2440

.0196

.050

8°

5.80

0.25

0.40

0°

6.20

0.50

1.27

8°

K x 45°

0.10 [.004]

8X c

8X L

8X b

0.25 [.010]

F OOT PR INT

8X 0.72 [.028]

NOT ES :

1. DIMENSIONING& TOLERANCING PER ASME Y14.5M-1994.

2. CONTROLLING DIMENSION: MILLIMETER

3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

4. OUT L INE CONF OR MS T O JEDE C OU T L INE MS -012AA.

DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].

6.46 [.255]

DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].

DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO

ASUBSTRATE.

3X 1.27 [.050]

8X 1.78 [.070]

SO-8 Part Marking Information (Lead-Free)

EXAMPLE: THIS IS AN IRF7101 (MOSFET)

DAT E CODE (YWW)

P = DE S IGNAT E S L E AD-F RE E

PRODUCT (OPTIONAL)

Y = LAST DIGIT OF THE YEAR

WW = WE E K

XXXX

F7101

INTERNATIONAL

RECTIFIER

LOGO

A = AS S E MB LY S IT E CODE

LOT CODE

PART NUMBER

IRF7418PbF

SO-8 Tape and Reel

Dimensions are shown in milimeters (inches)

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualifications Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.11/04

IRF7418PBF [INFINEON]

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