IRF7467PBF [INFINEON]
SMPS MOSFET; 开关电源MOSFET
| 型号： | IRF7467PBF |
| 厂家： | 
Infineon |
| 描述： | SMPS MOSFET |
| 文件： | 总8页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95275
IRF7467PbF
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
VDSS
30V
RDS(on) max ID
12mΩ
11A
l High Frequency Buck Converters for
Computer Processor Power
l Lead-Free
A
A
D
1
2
3
4
8
7
S
S
S
G
Benefits
D
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
6
5
D
D
SO-8
Top View
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
VDS
Drain-Source Voltage
30
V
V
VGS
Gate-to-Source Voltage
± 12
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
11
9.0
90
A
PD @TA = 25°C
PD @TA = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
2.5
W
W
1.6
0.02
W/°C
°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
Max.
20
50
Units
–––
°C/W
Notes through are on page 8
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1
09/21/04
IRF7467PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 ––– –––
––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
––– 9.4 12 VGS = 10V, ID = 11A
––– 10.6 13.5 mΩ VGS = 4.5V, ID = 9.0A
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
–––
17
35
VGS = 2.8V, ID = 5.5A
VGS(th)
IDSS
Gate Threshold Voltage
0.6
––– 2.0
V
VDS = VGS, ID = 250µA
––– ––– 20
––– ––– 100
––– ––– 200
––– ––– -200
VDS = 16V, VGS = 0V
µA
Drain-to-Source Leakage Current
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 12V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
28
––– –––
S
VDS = 16V, ID = 9.0A
ID = 9.0A
Qg
–––
–––
–––
–––
–––
–––
–––
–––
21
32
10
Qgs
Qgd
Qoss
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
6.7
nC VDS = 15V
VGS = 4.5V
5.8 8.7
21 29
VGS = 0V, VDS = 15V
VDD = 15V,
7.8 –––
2.5 –––
19 –––
4.0 –––
ID = 9.0A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 1.8Ω
VGS = 4.5V
Ciss
Coss
Crss
Input Capacitance
––– 2530 –––
––– 706 –––
VGS = 0V
Output Capacitance
Reverse Transfer Capacitance
VDS = 15V
–––
46 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
223
11
Units
mJ
EAS
IAR
Avalanche Current
–––
A
Diode Characteristics
Symbol
IS
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
Continuous Source Current
(Body Diode)
2.3
90
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
S
p-n junction diode.
––– 0.79 1.3
––– 0.65 –––
V
TJ = 25°C, IS = 9.0A, VGS = 0V
TJ = 125°C, IS = 9.0A, VGS = 0V
TJ = 25°C, IF = 9.0A, VR= 15V
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
––– 40
––– 56
––– 43
––– 64
60
84
65
96
ns
Qrr
trr
nC di/dt = 100A/µs
ns TJ = 125°C, IF = 9.0A, VR=15V
nC di/dt = 100A/µs
Qrr
2
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IRF7467PbF
1000
100
10
1000
100
10
VGS
VGS
TOP
15.0V
10.0V
4.50V
3.00V
2.70V
2.50V
2.25V
TOP
15.0V
10.0V
4.50V
3.00V
2.70V
2.50V
2.25V
BOTTOM 2.00V
BOTTOM 2.00V
2.0V
1
1
2.0V
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
100
11A
=
I
D
°
T = 150 C
J
1.5
1.0
0.5
0.0
10
°
T = 25 C
J
1
V
= 15V
DS
V
=10V
20µs PULSE WIDTH
GS
0.1
2.0
2.4
2.8
3.2 3.6
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7467PbF
4000
10
8
V
= 0V,
f = 1MHz
C
GS
I
D
=
9.0A
C
= C + C
SHORTED
ds
V
V
= 24V
= 15V
iss
gs
gd ,
gd
DS
DS
C
= C
gd
rss
C
= C + C
3200
2400
1600
800
0
oss ds
C
iss
6
4
C
oss
2
C
rss
0
0
8
16
24
32
40
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10
10us
100us
1ms
°
T = 25 C
J
1
°
T = 25 C
C
10ms
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1.8
0.1
0.3
1
0.1
0.6
0.9
1.2
1.5
2.1
1
10
100
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7467PbF
RD
12
10
8
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
4
Fig 10a. Switching Time Test Circuit
V
DS
2
90%
0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
P
2
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7467PbF
0.020
0.019
0.018
0.017
0.016
0.015
0.014
0.013
0.012
0.011
0.010
0.020
0.018
0.016
0.014
0.012
0.010
VGS = 4.5V
VGS = 10V
I
= 11A
D
2.0
4.0
V
6.0
8.0
10.0
12.0
14.0
16.0
0
20
40
60
80
100
Gate -to -Source Voltage (V)
I
, Drain Current ( A )
GS,
D
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
600
+
V
DS
I
D.U.T.
-
D
V
G
TOP
4.0A
7.2A
BOTTOM 9.0A
V
GS
3mA
500
400
300
200
100
0
Charge
I
I
D
G
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
V
25
50
75
100
125
150
D
-
I
°
20V
Starting T , Junction Temperature ( C)
J
Ω
0.01
t
p
I
AS
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF7467PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
INCHES
MILLIMET ER S
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
D
E
e
0.25 [.010]
A
.1497
4
.050 BASIC
1.27 BASIC
e 1 .025 BASIC
0.635 BASIC
H
K
L
y
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
A
F OOT PRINT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT L INE CONF OR MS T O JE DE C OU T L INE MS -012AA.
5
6
7
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
P = DE S I GNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
Y= LAST DIGIT OF THE YEAR
XXXX
F7101
WW = WEEK
INTERNATIONAL
RECTIFIER
LOGO
A = ASSEMBLYSITE CODE
LOT CODE
PART NUMBER
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7
IRF7467PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature.
When mounted on 1 inch square copper board, t<10 sec
Starting TJ = 25°C, L = 5.5mH
RG = 25Ω, IAS = 9.0A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
8
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