IRF7478PBF-1 [INFINEON]

Small Signal Field-Effect Transistor;


型号：	IRF7478PBF-1
厂家：	Infineon
描述：	Small Signal Field-Effect Transistor
文件：	总8页 (文件大小：197K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRF7478PbF-1

SMPS MOSFET

HEXFET^®Power MOSFET

V_DS

R_{DS(on) max}

(@V_GS= 10V)

R_{DS(on) max}

(@V_GS= 4.5V)

Q_{g (typical)}

I_D

SO-8

Top View

7.0

(@T_A= 25°C)

Applications

High frequency DC-DC converters

Features

Benefits

Industry-standard pinout SO-8 Package

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

⇒

MSL1, Industrial qualification

Standard Pack

Orderable Part

Number

IRF7478PbF-1

Base Part Number

Package Type

Form

Tube/Bulk

Quantity

IRF7478PbF-1

SO-8

Tape and Reel

4000

IRF7478TRPbF-1

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

7.0

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

5.6

P_D@T_A= 25°C

Power Dissipation

2.5

W/°C

Linear Derating Factor

0.02

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 20

Peak Diode Recovery dv/dt

Operating Junction and

3.7

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Symbol

R_θJL

Parameter

Junction-to-Drain Lead

Typ.

–––

Max.

Units

R_θJA

Junction-to-Ambient

–––

°C/W

Notes through are on page 8

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IRF7478PbF-1

Static @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

60 ––– –––

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

V_GS= 0V, I_D= 250μA

ΔV_(BR)DSS/ΔT_JBreakdown Voltage Temp. Coefficient

––– 0.065 ––– V/°C Reference to 25°C, I_D= 1mA

–––

1.0

_GS= 10V, I_D= 4.2A

R_DS(on)

V_GS(th)

I_DSS

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

mΩ

V_GS= 4.5V, I_D= 3.5A

V_DS= V_GS, I_D= 250μA

V_DS= 48V, V_GS= 0V

––– 3.0

––– ––– 20

––– ––– 100

––– ––– -100

μA

Drain-to-Source Leakage Current

V_DS= 48V, V_GS= 0V, T_J= 125°C

V_GS= 20V

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

I_GSS

V_GS= -20V

Dynamic @ T_J= 25°C (unless otherwise specified)

Parameter

Forward Transconductance

Total Gate Charge

Min. Typ. Max. Units

Conditions

V_DS= 50V, I_D= 4.2A

I_D= 4.2A

g_fs

––– –––

21 31

Q_g

–––

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

4.3 –––

9.6 –––

7.7 –––

2.6 –––

44 –––

13 –––

V_DS= 48V

V_GS= 4.5V

V_DD= 30V

I_D= 4.2A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 6.2Ω

V_GS= 10V

C_iss

C_oss

C_rss

C_oss

C_osseff.

Input Capacitance

––– 1740 –––

––– 300 –––

V_GS= 0V

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance

V_DS= 25V

–––

37 –––

ƒ = 1.0MHz

––– 1590 –––

––– 220 –––

––– 410 –––

V_GS= 0V, V_DS= 1.0V, ƒ = 1.0MHz

V_GS= 0V, V_DS= 48V, ƒ = 1.0MHz

V_GS= 0V, V_DS= 0V to 48V ꢀ

Symbol

E_AS

Parameter

Single Pulse Avalanche Energy

Avalanche Current

Typ.

–––

Max.

140

Units

I_AR

–––

4.2

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

I_S

Continuous Source Current

(Body Diode)

MOSFET symbol

2.3

––– –––

showing the

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

––– ––– 1.3

––– 52 78

––– 100 150

T_J= 25°C, I_S= 4.2A, V_GS= 0V

T_J= 25°C, I_F= 4.2A

Q_rr

nC di/dt = 100A/μs

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IRF7478PbF-1

100

VGS

15V

VGS

15V

TOP

10V

4.5V

3.7V

3.5V

3.3V

3.0V

4.5V

3.7V

3.5V

3.3V

3.0V

BOTTOM 2.7V

2.7V

20μs PULSE WIDTH

T = 150 C

T = 25 C

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

2.5

100

7.0A

= 150°C

2.0

1.5

1.0

0.5

0.0

= 25°C

= 25V

20μs PULSE WIDTH

=10V

2.5

3.0

3.5

4.0

-60 -40 -20

20 40 60 80 100 120 140 160

T , Junction Temperature( C)

, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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IRF7478PbF-1

100000

10000

1000

100

4.2A

= 0V,

f = 1 MHZ

= 48V

= 30V

= 12V

= C + C

SHORTED

iss

= C

rss

= C + C

ds gd

oss

Ciss

Coss

Crss

100

Q , Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

1000

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

T = 150 C

10us

100us

1ms

T = 25 C

10ms

T = 25 C

T = 150 C

Single Pulse

= 0 V

1.8

0.1

0.2

100

1000

0.6

1.0

1.4

2.2

, Drain-to-Source Voltage (V)

,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

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IRF7478PbF-1

8.0

6.0

4.0

2.0

0.0

R_D

V_DS

V_GS

10V

D.U.T.

R_G

⁺V_DD

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

T , Case Temperature ( C)

10%

Fig 9. Maximum Drain Current Vs.

Ambient Temperature

d(on)

d(off)

Fig 10b. Switching Time Waveforms

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

0.1

0.01

Notes:

1. Duty factor D =

2. Peak T =P

t / t

x Z

+ T

thJA A

0.00001

0.0001

0.001

0.01

0.1

100

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7478PbF-1

0.028

0.026

0.024

0.022

0.020

0.018

0.016

0.04

0.03

0.02

0.01

= 4.5V

= 7.0A

= 10V

0.0

2.0

4.0

6.0

8.0 10.0 12.0 14.0 16.0

, Drain Current (A)

Gate-to -Source Voltage (V)

GS,

Fig 12. On-Resistance Vs. Drain Current

Fig 13. On-Resistance Vs. Gate Voltage

Current Regulator

Same Type as D.U.T.

50KΩ

.3μF

V_GS

.2μF

12V

400

D.U.T.

TOP

1.9A

3.4A

BOTTOM 4.2A

3mA

Charge

300

200

100

Current Sampling Resistors

Fig 14a&b. Basic Gate Charge Test Circuit

and Waveform

15V

(BR)DSS

DRIVER

D.U.T

100

125

150

20V

Starting T , Junction Temperature ( C)

0.01

Fig 15c. Maximum Avalanche Energy

Fig 15a&b. Unclamped Inductive Test circuit

Vs. Drain Current

and Waveforms

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IRF7478PbF-1

SO-8 Package Outline

Dimensions are shown in millimeters (inches)

INCHES

MIN MAX

.0532 .0688

MILLIMET ERS

DIM

MIN

1.35

0.10

0.33

0.19

4.80

3.80

MAX

1.75

0.25

0.51

0.25

5.00

4.00

A1 .0040 .0098

.013

.0075 .0098

.189 .1968

.020

0.25 [.010]

.1497 .1574

.050 BASIC

1.27 BASIC

0.635 BASIC

e1 .025 BASIC

.2284 .2440

.0099 .0196

5.80

0.25

0.40

0°

6.20

0.50

1.27

8°

.016

0°

.050

8°

K x 45°

0.10 [.004]

8X c

8X L

8X b

0.25 [.010]

F OOT PRINT

8X 0.72 [.028]

NOT ES :

1. DIMENSIONING& TOLERANCING PER ASME Y14.5M-1994.

2. CONT ROLLING DIMENSION: MILLIMET ER

3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ].

4. OUT L INE CONF ORMS T O JE DE C OUT LINE MS -012AA.

DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS .

MOLD PROTRUSIONS NOT TOEXCEED 0.15 [.006].

6.46 [.255]

DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS .

MOLD PROTRUSIONS NOT TOEXCEED 0.25 [.010].

DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO

ASUBSTRATE.

3X 1.27 [.050]

8X 1.78 [.070]

SO-8 Part Marking

EXAMPLE: THIS IS AN IRF7101 (MOSFET)

DATE CODE (YWW)

P = DE S IGNAT E S L E AD-F R E E

PRODUCT (OPTIONAL)

Y = LAST DIGIT OF THE YEAR

WW = WEEK

XXXX

F7101

INTERNATIONAL

RECTIFIER

LOGO

A= ASSEMBLY SITE CODE

LOT CODE

PART NUMBER

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

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IRF7478PbF-1

SO-8 Tape and Reel (Dimensions are shown in millimeters (inches))

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

Qualification information^†

Industrial

(per JEDEC JESD47F^††guidelines)

Qualification level

MS L 1

Moisture Sensitivity Level

RoHS compliant

SO-8

(per JEDEC J-STD-020D^††

Yes

)

†

Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability

†† Applicable version of JEDEC standard at the time of product release

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Starting T_J= 25°C, L = 16mH, R_G= 25Ω, I_AS= 4.2A.

Pulse width ≤ 400μs; duty cycle ≤ 2%.

When mounted on 1 inch square copper board

ꢀ C_osseff. is a fixed capacitance that gives the same charging time as C_osswhile V_DSis rising from 0 to 80% V_DSS

I_SD≤ 4.2A, di/dt ≤ 160A/μs, V_DD≤ V_(BR)DSS, T_J≤ 150°C

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

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IRF7478PBF-1 [INFINEON]

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