IRF7478QPBF [INFINEON]
SMPS MOSFET; 开关电源MOSFET
| 型号： | IRF7478QPBF |
| 厂家： | 
Infineon |
| 描述： | SMPS MOSFET |
| 文件： | 总8页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-96128
SMPS MOSFET
IRF7478QPbF
HEXFET® Power MOSFET
l
l
l
l
l
l
l
l
Advanced Process Technology
UltraLowOn-Resistance
NChannelMOSFET
VDSS
60V
RDS(on) max (mW)
26@VGS = 10V
ID
4.2A
SurfaceMount
30@VGS = 4.5V
3.5A
Available in Tape & Reel
150°COperatingTemperature
Automotive [Q101] Qualified
Lead-Free
A
A
D
1
8
S
Description
2
7
S
D
SpecificallydesignedforAutomotiveapplications.Additional
features of these Automotive qualified HEXFET Power
MOSFET's are a 150°C junction operating temperature,
fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an
extremelyefficientandreliabledeviceforuseinAutomotive
applications and a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics making it ideal in a variety of power
applications. This surface mount SO-8 can dramatically
reduce board space and is also available in Tape & Reel.
3
4
6
S
D
5
G
D
SO-8
Top View
Absolute Maximum Ratings
Parameter
Max.
7.0
5.6
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
56
PD @TA = 25°C
Power Dissipation
2.5
W
W/°C
V
Linear Derating Factor
0.02
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 20
Peak Diode Recovery dv/dt
Operating Junction and
3.7
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Symbol
RθJL
Parameter
Junction-to-Drain Lead
Typ.
–––
Max.
20
Units
RθJA
Junction-to-Ambient
–––
50
°C/W
Notes through are on page 8
www.irf.com
1
09/04/07
IRF7478QPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
60 ––– –––
––– 0.065 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
–––
1.0
20
23
26
30
V
GS = 10V, ID = 4.2A
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
mΩ
V
VGS = 4.5V, ID = 3.5A
VDS = VGS, ID = 250µA
VDS = 48V, VGS = 0V
––– 3.0
––– ––– 20
––– ––– 100
––– ––– 100
––– ––– -100
µA
Drain-to-Source Leakage Current
VDS = 48V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V
V
GS = 20V
GS = -20V
IGSS
nA
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 4.2A
ID = 4.2A
gfs
17
––– –––
21 31
S
Qg
–––
–––
–––
–––
–––
–––
–––
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
4.3 –––
9.6 –––
7.7 –––
2.6 –––
44 –––
13 –––
nC VDS = 48V
VGS = 4.5V
VDD = 30V
ID = 4.2A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.2Ω
VGS = 10V
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 1740 –––
––– 300 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
37 –––
pF
ƒ = 1.0MHz
––– 1590 –––
––– 220 –––
––– 410 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 48V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 48V ꢀ
Coss eff.
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
140
4.2
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
2.3
56
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– 1.3
––– 52 78
––– 100 150
V
TJ = 25°C, IS = 4.2A, VGS = 0V
TJ = 25°C, IF = 4.2A
ns
nC
Qrr
2
di/dt = 100A/µs
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IRF7478QPbF
100
10
1
100
10
1
VGS
15V
VGS
15V
TOP
TOP
10V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
BOTTOM 2.7V
2.7V
2.7V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 150 C
J
°
T = 25 C
J
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
100
7.0A
=
I
D
T
= 150°C
2.0
1.5
1.0
0.5
0.0
J
10
T
= 25°C
J
V
= 25V
DS
20µs PULSE WIDTH
V
=10V
GS
1
2.5
3.0
3.5 4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
T , Junction Temperature( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7478QPbF
10
8
100000
I
D
=
4.2A
V
C
= 0V,
f = 1 MHZ
GS
V
V
V
= 48V
= 30V
= 12V
= C + C
,
C
ds
SHORTED
DS
DS
DS
iss
gs
gd
C
= C
rss
gd
C
= C + C
ds gd
oss
10000
1000
100
6
Ciss
Coss
4
Crss
10
2
10
0
1
100
0
10
20
30
40
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10
10us
100us
1ms
1
°
1
T = 25 C
10ms
J
°
T = 25 C
A
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1.8
0.1
0.1
0.2
1
10
100
1000
0.6
1.0
1.4
2.2
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7478QPbF
8.0
6.0
4.0
2.0
0.0
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
Fig 9. Maximum Drain Current Vs.
V
GS
Ambient Temperature
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
P
2
DM
t
SINGLE PULSE
1
(THERMAL RESPONSE)
0.1
0.01
t
2
Notes:
1. Duty factor D =
2. Peak T =P
J
t / t
1
x Z
+ T
thJA A
DM
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7478QPbF
0.028
0.026
0.024
0.04
0.03
0.02
0.01
V
= 4.5V
GS
0.022
0.020
0.018
0.016
I
= 7.0A
D
V
= 10V
GS
0
10
20
30
40
50
60
0.0
2.0
V
4.0
6.0
8.0 10.0 12.0 14.0 16.0
I
, Drain Current (A)
Gate-to -Source Voltage (V)
D
GS,
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
+
400
V
DS
D.U.T.
I
-
D
V
G
TOP
1.9A
3.4A
BOTTOM 4.2A
V
GS
3mA
Charge
I
I
D
G
300
200
100
0
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
V
DD
-
25
50
75
100
125
150
I
A
20V
°
Starting T , Junction Temperature ( C)
Ω
0.01
t
p
J
I
AS
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF7478QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
7
IRF7478QPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
max. junction temperature.
Starting TJ = 25°C, L = 16mH
RG = 25Ω, IAS = 4.2A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
ISD ≤ 4.2A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/2007
8
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