IRF7484PBF [INFINEON]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
| 型号： | IRF7484PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢ Power MOSFET |
| 文件： | 总10页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95281
IRF7484PbF
Typical Applications
HEXFET® Power MOSFET
l
l
l
l
Relayreplacement
Anti-lock Braking System
Air Bag
VDSS RDS(on) max (mW) ID
Lead-Free
40V
10@VGS = 7.0V
14A
Benefits
l
l
l
l
Advanced Process Technology
UltraLowOn-Resistance
Fast Switching
A
A
1
8
S
S
S
G
D
Repetitive Avalanche Allowed up to Tjmax
2
3
4
7
D
Description
6
D
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
extremelylow on-resistanceper siliconarea. Additional
features of this HEXFET power MOSFET are a 150°C
junction operating temperature, fast switching speed
andimprovedrepetitiveavalancherating. Thesebenefits
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
5
D
SO-8
Top View
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
14
11
A
110
PD @TA = 25°C
Power Dissipation
Linear Derating Factor
2.5
W
W/°C
V
0.02
VGS
Gate-to-Source Voltage
± 8.0
230
EAS
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
IAR
See Fig.16c, 16d, 19, 20
EAR
Repetitive Avalanche Energy
Junction and Storage Temperature Range
mJ
°C
TJ, TSTG
-55 to + 150
Thermal Resistance
Symbol
RθJL
Parameter
Junction-to-Drain Lead
Typ.
–––
Max.
20
Units
RθJA
Junction-to-Ambient
–––
50
°C/W
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1
09/21/04
IRF7484PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
40 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.040 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 10 mΩ VGS = 7.0V, ID = 14A
1.0 ––– 2.0
40 ––– –––
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
––– 69 100
––– 9.0 –––
––– 16 –––
––– 9.3 –––
––– 5.0 –––
––– 180 –––
––– 58 –––
––– 3520 –––
––– 660 –––
––– 76 –––
V
S
VDS = VGS, ID = 250µA
VDS = 10V, ID = 14A
Forward Transconductance
VDS = 40V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
µA
nA
VDS = 32V, VGS = 0V, TJ = 125°C
VGS = 8.0V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -8.0V
Qg
ID = 14A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 32V
VGS = 7.0V
VDD = 20V
ID = 1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.2Ω
VGS = 7.0V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
showing the
2.3
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
110
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– 1.3
––– 59 89
––– 110 170
V
TJ = 25°C, IS = 2.3A, VGS = 0V
ns
TJ = 25°C, IF = 2.3A
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
ꢀ ISD ≤ 14A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C.
,
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in square Cu board.
Starting TJ = 25°C, L = 2.3mH, RG = 25Ω,
IAS = 14A. (See Figure 12).
Limited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive
avalanche performance.
2
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IRF7484PbF
100000
10000
1000
100
10000
1000
100
10
VGS
7.5V
VGS
7.5V
TOP
TOP
7.0V
4.5V
3.0V
2.5V
2.3V
2.0V
7.0V
4.5V
3.0V
2.5V
2.3V
2.0V
BOTTOM 1.8V
BOTTOM 1.8V
10
1.8V
1
1
1.8V
0.1
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
1000.00
14A
=
I
D
100.00
10.00
1.00
1.5
T
= 150°C
J
1.0
0.5
0.0
T
= 25°C
V
J
= 15V
DS
20µs PULSE WIDTH
V
= 10V
0.10
GS
1.0
2.0
3.0 4.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
°
T , Junction Temperature
( C)
V
, Gate-to-Source Voltage (V)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7484PbF
100000
8
7
6
5
4
3
2
1
0
D
I
= 14A
V
= 0V,
f = 1 MHZ
GS
V
V
V
= 32V
= 20V
= 8V
DS
DS
DS
C
= C + C
,
C
ds
SHORTED
iss
gs
gd
C
= C
rss
gd
C
= C + C
oss
ds
gd
10000
1000
100
Ciss
Coss
Crss
10
0
10
20
30
40
50
60
70
80
1
10
100
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
10
T
= 150°C
J
100µsec
1msec
T
= 25°C
J
10msec
1
1
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.10
0
1
10
100
1000
0.2
0.4
V
0.6
0.8
1.0
1.2
1.4
V
, Drain-toSource Voltage (V)
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7484PbF
15
12
9
RD
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
3
V
DS
90%
0
25
50
T
75
100
125
150
°
( C)
, Case Temperature
C
10%
Fig 9. Maximum Drain Current Vs.
V
GS
Case Temperature
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJA
A
0.1
0.0001
0.001
0.01
0.1
1
10
100
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7484PbF
16.0
15.0
14.0
13.0
12.0
9.40
9.30
9.20
9.10
9.00
8.90
8.80
8.70
8.60
I
= 14A
V
= 7.0V
D
GS
11.0
10.0
9.0
8.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
20
40
60
80
100
120
V
Gate -to -Source Voltage (V)
GS,
I , Drain Current (A)
D
Fig 13. Typical On-Resistance Vs. Drain
Fig 12. Typical On-Resistance Vs. Gate
Current
Voltage
1.8
1.7
1.6
1.5
50
40
30
20
10
0
I
= 250µA
D
1.4
1.3
1.2
1.1
1.0
0.9
0.8
-75 -50 -25
0
25 50 75 100 125 150 175 200
, Temperature ( °C )
1.00
10.00
100.00
Time (sec)
1000.00
T
J
Fig 15. Typical Power Vs. Time
Fig 14. Typical Threshold Voltage Vs.
Junction Temperature
6
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IRF7484PbF
520
416
312
208
104
0
I
D
TOP
6.3A
11A
14A
BOTTOM
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
Ω
t
p
Fig 16c. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
( C)
Starting Tj, Junction Temperature
V
(BR)DSS
Fig 16a. Maximum Avalanche Energy
t
p
Vs. Drain Current
I
AS
Fig 16d. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.2µF
12V
VGS
.3µF
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
V
GS
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 18. Basic Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
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7
IRF7484PbF
100
Duty Cycle = Single Pulse
10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming
avalanche losses
Tj = 25°C due to
∆
0.01
1
0.05
0.10
0.1
0.01
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
tav (sec)
Fig 19. Typical Avalanche Current Vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
250
TOP
BOTTOM 10% Duty Cycle
= 14A
Single Pulse
225
200
175
150
125
100
75
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
50
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
25
0
D = Duty cycle in avalanche = tav ·f
25
50
75
100
125
150
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Fig 20. Maximum Avalanche Energy
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Vs. Temperature
8
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IRF7484PbF
SO-8 Package Details
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A1 .0040
b
c
.013
8
1
7
2
6
3
5
4
.0075
.189
.0098
.1968
.1574
6
H
D
E
e
E
0.25 [.010]
A
.1497
.050 BASIC
1.27 BASIC
e 1 .025 BASIC
0.635 BASIC
H
K
L
y
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
A
F OOT PRINT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT L INE CONF OR MS T O JE DE C OU T L INE MS -012AA.
5
6
7
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DAT E CODE (YWW)
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF T HE YEAR
XXXX
F7101
WW = WE E K
INTERNATIONAL
RECTIFIER
LOGO
A = AS S E MB LY S IT E CODE
LOT CODE
PART NUMBER
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9
IRF7484PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
10
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INFINEON
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