IRF7495 [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF7495 |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94683B
IRF7495
HEXFET® Power MOSFET
VDSS
RDS(on) max
22m @VGS = 10V
ID
Applications
l High frequency DC-DC converters
100V
7.3A
Benefits
A
A
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
1
2
3
4
8
S
S
D
7
D
6
S
D
5
G
D
l Fully Characterized Avalanche Voltage
and Current
SO-8
Top View
Absolute Maximum Ratings
Parameter
Max.
100
± 20
7.3
Units
V
VDS
VGS
Drain-to-Source Voltage
Gate-to-Source Voltage
I
I
I
@ T = 25°C
A
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
D
A
@ T = 100°C
A
4.6
D
58
DM
P
@T = 25°C
A
2.5
W
Maximum Power Dissipation
D
Linear Derating Factor
0.02
7.3
-55 to + 150
W/°C
dv/dt
T
J
Peak Diode Recovery dv/dt
Operating Junction and
V/ns
°C
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
Max.
20
Units
°C/W
Rθ
Rθ
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount)
JL
–––
50
JA
Notes through are on page 8
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1
09/23/03
IRF7495
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
V(BR)DSS
100
–––
0.10
18
–––
V
∆
∆
V(BR)DSS/ TJ
Breakdown Voltage Temp. Coefficient –––
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
22
4.0
VGS = 10V, ID = 4.4A
VDS = VGS, ID = 250µA
Ω
m
–––
–––
–––
–––
–––
V
Drain-to-Source Leakage Current
–––
–––
–––
–––
20
µA VDS = 100V, VGS = 0V
250
200
-200
VDS = 80V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 25V, ID = 4.4A
gfs
Qg
11
–––
–––
S
–––
–––
–––
–––
–––
–––
–––
34
51
ID = 4.4A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
6.3
11.7
8.7
13
–––
–––
–––
–––
–––
–––
nC
VDS = 50V
VGS = 10V
VDD = 50V
ID = 4.4A
td(off)
tf
Ω
RG = 6.2
Turn-Off Delay Time
Fall Time
10
ns
36
VGS = 10V
VGS = 0V
VDS = 25V
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 1530 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
250
110
980
160
240
–––
–––
–––
–––
–––
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
GS = 0V, VDS = 80V, ƒ = 1.0MHz
V
Coss eff.
VGS = 0V, VDS = 0V to 80V
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
–––
Max.
180
4.4
Units
mJ
EAS
IAR
Avalanche Current
A
Diode Characteristics
Parameter
Continuous Source Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
I
I
–––
–––
2.3
S
(Body Diode)
A
showing the
G
Pulsed Source Current
–––
–––
58
integral reverse
SM
S
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
42
1.3
–––
–––
V
T = 25°C, I = 4.4A, V = 0V
J S GS
SD
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 4.4A, VDD = 25V
J F
rr
di/dt = 100A/µs
Q
t
73
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
2
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IRF7495
100
10
1
100
10
1
VGS
VGS
15V
TOP
15V
10V
8.0V
5.0V
4.5V
TOP
10V
8.0V
5.0V
4.5V
BOTTOM
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
2.5
I
= 7.3A
D
V
= 10V
GS
T
= 150°C
J
2.0
1.5
1.0
0.5
T
= 25°C
J
V
= 50V
DS
20µs PULSE WIDTH
0.1
2
3
4 5
-60 -40 -20
T
0
20 40 60 80 100 120 140 160 180
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
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3
IRF7495
100000
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I
= 4.4A
D
C
+ C , C
SHORTED
iss
gs
gd
ds
V
= 80V
= 50V
= 20V
C
= C
DS
rss
gd
= C + C
C
V
10000
1000
100
oss
ds
gd
DS
V
DS
C
iss
6.0
C
oss
4.0
C
rss
2.0
10
0.0
1
10
100
0
10
20
30
40
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100.00
10.00
1.00
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
100µsec
1msec
T
= 25°C
V
J
0.10
1
T
= 25°C
A
Tj = 150°C
10msec
= 0V
Single Pulse
GS
1.0
0.01
0.1
0.0
0.2
0.4
0.6
0.8
0
1
10
100
1000
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7495
8
7
6
5
4
3
2
1
0
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
T
, Ambient Temperature (°C)
A
10%
V
GS
Fig 9. Maximum Drain Current vs.
t
t
r
t
t
f
d(on)
d(off)
Ambient Temperature
Fig 10b. Switching Time Waveforms
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF7495
50
40
30
20
10
25
20
15
10
V
= 10V
GS
I
= 4.4A
D
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16
0
10
20
30
40
50
60
70
I
, Drain Current (A)
V
Gate -to -Source Voltage (V)
D
GS,
Fig 12. On-Resistance vs. Drain Current
Fig 13. On-Resistance vs. Gate Voltage
Q
G
VGS
L
VCC
500
Q
Q
GD
GS
DUT
0
I
D
1K
V
G
TOP
2.0A
3.5A
400
300
200
100
0
Charge
BOTTOM 4.4A
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
25
50
75
100
125
150
20V
Ω
0.01
t
p
I
AS
Starting T , Junction Temperature (°C)
J
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
vs. Drain Current
and Waveforms
6
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IRF7495
SO-8 Package Details
INCHES
MIL LIME T ERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A1 .0040
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
E
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
0.635 BASIC
e1 .025 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F OOT PRINT
8X 0.72 [.028]
NOTES:
1. DIMENSIONING&TOLERANCINGPER ASME Y14.5M-1994.
2. CONTROLLINGDIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT LINE CONF ORMS T O JEDEC OUT LINE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TOEXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TOEXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF710
1 (MOSFET)
DATE CODE (YWW)
Y = LAST DIGIT OF
WW = WEEK
THE YEAR
YWW
XXXX
F7101
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
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7
IRF7495
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 19mH
RG = 25Ω, IAS = 4.4A.
When mounted on 1 inch square copper
board, t ≤ 10 sec.
as Coss while VDS is rising from 0 to 80% VDSS
.
ISD ≤ 5.8A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/03
8
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