IRF7526D1TRPBF [INFINEON]
Co-packaged HEXFET®Power MOSFET and Schottky Diode; 共同封装HEXFET® ？功率MOSFET和肖特基二极管
| 型号： | IRF7526D1TRPBF |
| 厂家： | 
Infineon |
| 描述： | Co-packaged HEXFET®Power MOSFET and Schottky Diode |
| 文件： | 总10页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95437
IRF7526D1PbF
TM
FETKY MOSFET & Schottky Diode
l Co-packaged HEXFET® Power
MOSFET and Schottky Diode
l P-Channel HEXFET
1
2
3
4
8
7
K
K
A
VDSS = -30V
l Low VF Schottky Rectifier
l Generation 5 Technology
A
6
5
S
D
D
RDS(on) = 0.20Ω
TM
l Micro8 Footprint
G
l Lead-Free
Schottky Vf = 0.39V
Top View
Description
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
ThenewMicro8TM package, withhalfthefootprintareaofthestandardSO-8, provides
the smallest footprint available in an SOIC outline. This makes the Micro8TM an ideal
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
Micro8TM
Absolute Maximum Ratings
Parameter
Maximum
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
-2.0
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current À
-1.6
-16
A
PD @TA = 25°C
PD @TA = 70°C
1.25
W
Power Dissipation
0.8
Linear Derating Factor
10
mW/°C
V
VGS
Gate-to-Source Voltage
± 20
dv/dt
Peak Diode Recovery dv/dt Á
Junction and Storage Temperature Range
-5.0
V/ns
°C
TJ, TSTG
-55 to +150
Thermal Resistance Ratings
Parameter
Maximum
Units
RθJA
Junction-to-Ambient Ã
100
°C/W
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
ISD ≤ -1.2A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs – duty cycle ≤ 2%
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
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1
02/22/05
IRF7526D1PbF
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = -250µA
VGS = -10V, ID = -1.2A
VGS = -4.5V, ID = -0.60A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -0.60A
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -20V
V(BR)DSS
Drain-to-Source Breakdown Voltage
-30 ––– –––
––– 0.17 0.20
––– 0.30 0.40
-1.0 ––– –––
0.94 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
––– 7.5
11
ID = -1.2A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 1.3 1.9
––– 2.5 3.7
––– 9.7 –––
––– 12 –––
––– 19 –––
––– 9.3 –––
––– 180 –––
––– 87 –––
––– 42 –––
nC VDS = -24V
VGS = -10V, See Fig. 6
VDD = -15V
ID = -1.2A
RG = 6.2Ω
RD = 12Ω,
VGS = 0V
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF VDS = -25V
ƒ = 1.0MHz, See Fig. 5
Reverse Transfer Capacitance
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current(Body Diode) ––– ––– -1.25
A
ISM
VSD
trr
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
––– ––– -9.6
––– ––– -1.2
V
TJ = 25°C, IS = -1.2A, VGS = 0V
TJ = 25°C, IF = -1.2A
Reverse Recovery Time (Body Diode) ––– 30
45
55
ns
Qrr
Reverse Recovery Charge
––– 37
nC di/dt = 100A/µs
Schottky Diode Maximum Ratings
Parameter
Max. Units
Conditions
IF(av)
Max. Average Forward Current
1.9
50% Duty Cycle. Rectangular Wave, TA = 25°C
A
See Fig. 14
1.3
TA = 70°C
ISM
Max. peak one cycle Non-repetitive
Surge current
120
5µs sine or 3µs Rect. pulse
Following any rated
11
10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
A
Schottky Diode Electrical Specifications
Parameter
Max. Units
Conditions
IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C.
VR = 30V TJ = 25°C
TJ = 125°C
VFM
Max. Forward voltage drop
0.50
0.62
V
0.39
0.57
IRM
Max. Reverse Leakage current
0.06
mA
16
Ct
Max. Junction Capacitance
Max. Voltage Rate of Charge
92
pF
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
dv/dt
3600 V/µs
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
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IRF7526D1PbF
Power Mosfet Characteristics
10
10
VGS
- 15V
- 10V
VGS
- 15V
- 10V
TOP
TOP
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
BOTTOM - 3.0V
1
1
-3.0V
-3.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
J
= 25°C
T = 150°C
J
A
A
0.1
0.1
0.1
1
10
0.1
1
10
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
10
I
= -1.2A
D
TJ = 25°C
TJ = 150°C
1
VDS = -10V
20µs PULSE WIDTH
V
= -10V
GS
0.1
A
7.0A
-60 -40 -20
0
20 40 60 80 100 120 140 160
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
T
, Junction Temperature (°C)
-VGS , Gate-to-Source Voltage (V)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
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3
IRF7526D1PbF
Power Mosfet Characteristics
20
400
I
= -1.2A
V
C
C
C
= 0V,
f = 1MHz
D
GS
iss
= C + C
,
C
SHORTED
gs
gd
ds
= C
rss
oss
gd
V
= -24V
= -15V
DS
= C + C
16
12
8
ds
gd
V
DS
300
200
100
0
C
C
iss
oss
C
rss
4
0
A
A
0
2
4
6
8
10
12
1
10
100
Q , Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
G
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
10
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T = 150°C
J
100µs
1
T = 25°C
J
1ms
10ms
T
= 25°C
= 150°C
A
T
J
Single Pulse
V
= 0V
GS
A
0.1
0.1
A
100
0.4
0.6
0.8
1.0
1.2
1.4
1
10
-V , Drain-to-Source Voltage (V)
-V , Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7526D1PbF
Power Mosfet Characteristics
1000
100
10
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
thJC C
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.60
0.50
1.5
1.0
0.5
0.0
0.40
VGS = -4.5V
I
= -2.0A
0.30
0.20
0.10
VGS = -10V
A
A
3
6
9
12
15
0
1
2
3
4
-V
, Gate-to-Source Voltage (V)
-I , Drain Current (A)
D
GS
Fig 10. Typical On-Resistance Vs. Drain
Fig 11. Typical On-Resistance Vs. Gate
Current
Voltage
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IRF7526D1PbF
Schottky Diode Characteristics
10
100
10
TJ = 150°C
125°C
100°C
1
75°C
50°C
25°C
0.1
0.01
0.001
A
0.0001
0
5
10
15
20
25
30
Reverse Voltage - VR (V)
1
TJ = 150°C
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
TJ = 125°C
TJ = 25°C
160
Vr = 80% Rated
RthJA = 100°C/W
Square wave
140
120
100
80
D = 3/4
D = 1/2
D =1/3
D = 1/4
D = 1/5
60
40
DC
0.1
20
0.0
0.2
0.4
0.6
0.8
1.0
A
Forward Voltage Drop - VF (V)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Average Forward Current - I F(AV) (A)
Fig. 12 -Typical Forward Voltage Drop
Characteristics
Fig.14 - Maximum Allowable Ambient
Temp. Vs. ForwardCurrent
6
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IRF7526D1PbF
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.2µF
.3µF
12V
Q
Q
-
GS
GD
V
+
DS
D.U.T.
V
G
V
GS
-3mA
Charge
I
I
D
G
Current Sampling Resistors
Fig 15b. Gate Charge Test Circuit
Fig 15a. Basic Gate Charge Waveform
-
+
Fig 16a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
90%
V
DS
Fig 16b. Switching Time Waveforms
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7
IRF7526D1PbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 17 For P Channel HEXFETS
8
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IRF7526D1PbF
Micro8 Package Outline
Dimensions are shown in milimeters (inches)
LEAD ASSIGNMENTS
INCHES
MILLIMETERS
DIM
A
D
MIN
.036
MAX
.044
.008
.014
.007
.120
MIN
0.91
0.10
0.25
0.13
2.95
MAX
1.11
0.20
0.36
0.18
3.05
3
- B -
D
D
7
D
6
D
5
D1 D1 D2 D2
A1 .004
8
1
8
1
7
6
5
4
B
C
D
e
.010
.005
.116
8
1
7
2
6
3
5
4
3
SINGLE
DUAL
H
E
0.25 (.010)
M
A
M
- A -
2
3
2
3
4
.0256 BASIC
.0128 BASIC
0.65 BASIC
0.33 BASIC
e1
E
H
L
S1 G1 S2 G2
S
S
S
G
.116
.188
.016
0°
.120
.198
.026
6°
2.95
4.78
0.41
0°
3.05
5.03
0.66
6°
e
θ
6X
e 1
RECOMMENDED FOOTPRINT
θ
1.04
( .041 )
8X
0.38
8X
A
( .015 )
- C -
B
0.10 (.004)
A 1
C
L
8X
0.08 (.003)
8X
8X
M
C
A
S
B S
4.24
( .167 ) ( .208 )
3.20
( .126 )
5.28
NOTES:
1
2
3
DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
CONTROLLING DIMENSION : INCH.
0.65
( .0256 )
6X
DIMENSIONS DO NOT INCLUDE MOLD FLASH.
Micro8 Part Marking Information
EXAMPLE: THIS IS AN IRF7501
LOT CODE (XX)
PART NUMBER
DAT E CODE (YW) - S ee table below
Y = YEAR
W = WE E K
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
WW = (27-52) IF PRECEDED BY ALETTER
WOR K
WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
WORK
YEAR
Y
WE EK
W
YEAR
Y
WEEK
W
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
F
G
H
J
27
28
29
30
A
B
C
D
24
25
26
X
Y
Z
K
50
51
52
X
Y
Z
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9
IRF7526D1PbF
Micro8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
2. CONTROLLING DIMENSION : MILLIMETER.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/05
10
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