IRF7534D1 [INFINEON]
FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.055ohm, Schottky Vf=0.39V); FETKY MOSFET和肖特基二极管（ VDSS = -20V ， RDS（ON） = 0.055ohm ，肖特基VF = 0.39V ）
| 型号： | IRF7534D1 |
| 厂家： | 
Infineon |
| 描述： | FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.055ohm, Schottky Vf=0.39V) |
| 文件： | 总8页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-93864
IRF7534D1
FETKY MOSFET & Schottky Diode
®
●
●
Co-packaged HEXFET power
1
8
7
K
K
A
MOSFET and Schottky diode
Ultra Low On-Resistance
MOSFET
VDSS = -20V
2
A
3
4
6
5
S
D
D
RDS(on) = 0.055Ω
Schottky Vf=0.39V
●
●
●
Trench technology
Micro8TM Footprint
G
Available in Tape & Reel
Top View
Description
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer
an innovative, board space saving solution for switching regulator and power
management applications. International Rectifier utilizes advanced processing
techniques to achieve extremely low on-resistance per silicon area. Combining this
technology with International Rectifier’s low forward drop Schottky rectifiers results in
an extremely efficient device suitable for use in a wide variety of portable electronics
applications, such as cell phones, PDAs, etc.
Micro8
The Micro8TM package makes an ideal device for applications where printed circuit
board space is at a premium. The low profile (<1.1mm) of the Micro8TM will allow it to
fit easily into extremely thin application environments such as portable electronics
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Max.
-20
Units
V
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
-4.3
-3.4
-34
A
PD @TA = 25°C
PD @TA = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
1.25
0.8
W
W
10
mW/°C
V
VGS
Gate-to-Source Voltage
± 12
dv/dt
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
1.1
V/ns
°C
TJ , TSTG
-55 to + 150
Thermal Resistance
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
100
°C/W
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
ISD ≤ -1.2A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs – duty cycle ≤ 2%
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
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1
3/22/00
IRF7534D1
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = -250µA
VGS = -4.5V, ID = -4.3A
VGS = -2.5V, ID = -3.4A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -0.8A
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 125°C
VGS = -12V
V(BR)DSS
RDS(on)
Drain-to-Source Breakdown Voltage
-20 ––– –––
––– ––– 0.055
––– ––– 0.105
-0.6 ––– -1.2
2.5 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
V
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 12V
Qg
––– 10
15
ID = -3A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 2.1 3.1
––– 2.5 3.7
––– 10 –––
––– 46 –––
––– 60 –––
––– 64 –––
––– 1066 –––
––– 402 –––
––– 125 –––
nC VDS = -10V
VGS = -5V
VDD = -10V
ID = -2A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
RD = 5Ω,
Ciss
Coss
Crss
Input Capacitance
VGS = 0V
Output Capacitance
pF
VDS = -10V
ƒ = 1.0MHz
Reverse Transfer Capacitance
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current(Body Diode) ––– ––– -1.3
A
ISM
VSD
trr
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
––– ––– -34
––– ––– -1.2
V
TJ = 25°C, IS = -1.6A, VGS = 0V
TJ = 25°C, IF = -2.5A
Reverse Recovery Time (Body Diode) ––– 54
82
61
ns
Qrr
Reverse Recovery Charge
––– 41
nC di/dt = 100A/µs
Schottky Diode Maximum Ratings
Parameter
Max. Units
Conditions
IF(av)
Max. Average Forward Current
1.9
A
50% Duty Cycle. Rectangular Wave, TA = 25°C
1.4
Fig.13
TA = 70°C
See
ISM
Max. peak one cycle Non-repetitive
Surge current
120
5µs sine or 3µs Rect. pulse
Following any rated
11
10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
A
Schottky Diode Electrical Specifications
Parameter
Max. Units
Conditions
IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C .
VFM
Max. Forward voltage drop
0.50
0.62
V
0.39
0.57
IRM
Max. Reverse Leakage current
0.02
mA
VR = 20V
TJ = 25°C
8
TJ = 125°C
Ct
Max. Junction Capacitance
Max. Voltage Rate of Charge
92
pF
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
dv/dt
3600 V/ µs
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
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IRF7534D1
Power MOSFET Characteristics
100
100
10
1
VGS
VGS
TOP
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
TOP
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
BOTTOM -1.50V
10
-1.50V
1
-1.50V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
°
T = 150 C
J
T = 25 C
J
0.1
0.1
0.1
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
-4.3A
=
I
D
°
T = 25 C
J
1.5
1.0
0.5
0.0
°
T = 150 C
J
10
V
= -15V
DS
V
= -4.5V
GS
20µs PULSE WIDTH
1
1.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
2.0
3.0
4.0 5.0
T , Junction Temperature( C)
J
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7534D1
Power MOSFET Characteristics
15
1600
-4.3A
=
I
D
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
C
= C + C
iss
gs
gd ,
C
= C
rss
gd
C
= C + C
gd
12
9
oss
ds
1200
800
400
0
V
=-10V
DS
C
iss
6
3
C
C
oss
rss
0
1
10
100
0
4
8
12
16
20
24
-V , Drain-to-Source Voltage (V)
DS
Q
, Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100us
1ms
10
°
T = 150 C
J
°
T = 25 C
J
1
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
2.0
0.1
0.1
0.0
0.1
1
10
100
0.4
0.8
1.2
1.6
2.4
-V , Drain-to-Source Voltage (V)
DS
-V ,Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF7534D1
Power MOSFET Characteristics
0.12
0.10
0.08
0.06
0.04
0.10
V
= -2.5V
GS
0.08
0.06
I
= -4.3A
D
V
= -4.5V
GS
0.04
2.0
3.0
4.0
5.0
6.0
0
5
10
15
20
-V
Gate -to -Source Voltage (V)
-I , Drain Current (A)
GS,
D
Fig 9. Typical On-Resistance Vs. Drain
Fig 10. Typical On-Resistance Vs. Gate
Current
Voltage
1000
100
D = 0.50
0.20
0.10
10
0.05
P
DM
0.02
0.01
t
1
SINGLE PULSE
(THERMAL RESPONSE)
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7534D1
Schottky Diode Characteristics
10
1
TJ = 150°C
TJ = 125°C
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
TJ
=
25°C
160
140
120
100
80
V r = 20V
R
= 100°C/W
thJA
Square wave
D = 3/4
D = 1/2
D =1/3
D = 1/4
D = 1/5
60
40
0.1
DC
0.0
0.2
0.4
0.6
0.8
1.0
20
Forward Voltage Drop - V (V)
F
A
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Average Forw ard C urrent - I F(AV) (A)
Fig. 12 -Typical Forward Voltage Drop
Characteristics
Fig.14 - Maximum Allowable Ambient
Temp. Vs. ForwardCurrent
6
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IRF7534D1
Package Outline
Micro8 Outline
Dimensions are shown in millimeters (inches)
LEAD ASSIGNMENTS
INCHES
MILLIM ETERS
DIM
D
MIN
MAX
.044
.008
.014
.007
.120
M IN
0.91
0.10
0.25
0.13
2.95
MAX
1.11
0.20
0.36
0.18
3.05
3
- B -
D
D
7
D
6
D
5
D1 D1 D2 D2
A
.036
.004
.010
.005
.116
A1
B
8
1
8
1
7
6
5
4
8
1
7
2
6
3
5
4
3
C
D
e
SINGLE
DUAL
H
E
0.25 (.010)
M
A
M
- A -
2
3
4
2
3
.0256 BASIC
.0128 BASIC
0.65 BASIC
0.33 BASIC
e1
E
S1 G 1 S2 G 2
S
S
S
G
.116
.188
.016
0°
.120
.198
.026
6°
2.95
4.78
0.41
0°
3.05
H
L
5.03
0.66
6°
e
6X
θ
e 1
RECOM MENDED FOO TPRINT
θ
1.04
( .041 )
8X
0.38
8X
A
( .015 )
- C
B
-
0.10 (.004)
A 1
C
L
8X
8X
8X
0.08 (.003)
M
C
A
S
B
S
4.24
( .167 )
3.20
( .126 )
5.28
( .208 )
N O TE S :
1
2
3
D IM E N S IO N IN G A N D TO LE R A N C IN G P E R A N SI Y 14.5M -1982.
C O N TR O LLIN G D IM E N SIO N IN C H .
D IM E N S IO N S D O N O T IN C L U D E M O LD F LA S H .
:
0.65
( .0256 )
6X
Part Marking Information
Micro8
A
DATE CO DE (YW W )
Y = LAST DIG IT O F YEAR
W W = W EEK
EXAM PLE : THIS IS AN IRF7501
451
7501
PART NUM BER
TO P
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7
IRF7534D1
Tape & Reel Information
Micro8
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER
1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTIO N
NOTES:
1. OUTLINE CON FORM S TO EIA-481 & EIA-541.
2. CON TRO LLING DIM ENSION : M ILLIM ETER.
330.00
(12.992)
M AX.
14.40 ( .566 )
12.40 ( .488 )
NO TES :
1. CO NTRO LLING DIMENSION : MILLIMETER.
2. OUTLINE CONFO RM S TO EIA-481 & EIA-541.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252 7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice.
2/2000
8
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