IRF7580MPbF [INFINEON]
DirectFET® N-Channel Power MOSFET;
| 型号： | IRF7580MPbF |
| 厂家： | 
Infineon |
| 描述： | DirectFET® N-Channel Power MOSFET |
| 文件： | 总11页 (文件大小：515K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
StrongIRFET™
IRF7580MTRPbF
DirectFET® N-Channel Power MOSFET
Application
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
VDSS
RDS(on) typ.
max
60V
2.9m
3.6m
116A
ID
S
S
S
S
S
D
D
Benefits
G
Improved gate, avalanche and dynamic dv/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dv/dt and di/dt capability
Lead-free, RoHS compliant
DirectFET®
ISOMETRIC
ME
Standard Pack
Orderable Part Number
Base part number Package Type
Form
Quantity
IRF7580MPbF
DirectFET ME
Tape and Reel
4800
IRF7580MTRPbF
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
120
100
80
I
= 70A
D
T
= 125°C
J
60
40
20
T
= 25°C
J
0
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
175
T
, Case Temperature (°C)
C
V
Gate -to -Source Voltage (V)
GS,
Fig 2. Maximum Drain Current vs. Case Temperature
Fig 1. Typical On-Resistance vs. Gate Voltage
1
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IRF7580MTRPbF
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
Parameter
Max.
116
82
Units
A
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
460
IDM
115
PD @TC = 25°C
W
W/°C
V
0.78
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
± 20
VGS
TJ
TSTG
-55 to + 175
°C
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy
100
120
70
mJ
Single Pulse Avalanche Energy Tested Value
EAS (tested)
IAR
Avalanche Current
A
12
EAR
Repetitive Avalanche Energy
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Max.
44
Units
Junction-to-Ambient
–––
12.5
20
RJA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
–––
–––
1.3
RJA
°C/W
RJA
RJC
–––
0.75
Junction-to-PCB Mounted
–––
RJA-PCB
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
60
––– –––
V
–––
44 ––– mV/°C Reference to 25°C, ID = 1.0mA
V(BR)DSS/TJ
RDS(on)
––– 2.9
3.6
VGS = 10V, ID = 70A
GS = 6.0V, ID = 35A
VDS = VGS, ID = 150µA
m
m
V
––– 3.5 –––
2.1 ––– 3.7
––– ––– 1.0
––– ––– 150
––– ––– 100
––– ––– -100
––– 0.8 –––
V
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
µA VDS = 60V, VGS = 0V
V
V
V
DS = 60V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
nA
GS = 20V
GS = -20V
RG
Notes:
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
TC measured with thermocouple mounted to top (Drain) of part.
Used double sided cooling , mounting pad with large heatsink.
Mounted to a PCB with small clip
heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with
small clip heatsink (still air)
Surface mounted on 1 in. square Cu
board (still air).
2
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IRF7580MTRPbF
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
DS = 10V, ID = 70A
gfs
Qg
190 ––– –––
––– 120 180
S
V
ID = 70A
Qgs
Qgd
Qsync
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
–––
–––
–––
–––
–––
–––
–––
32
36
84
20
38
53
21
–––
–––
–––
–––
–––
–––
–––
VDS =30V
nC
VGS = 10V
ID = 70A, VDS =0V, VGS = 10V
VDD = 30V
ID = 30A
RG = 2.7
ns
td(off)
tf
Fall Time
VGS = 10V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 6510 –––
––– 610 –––
––– 360 –––
V
GS = 0V
VDS = 25V
ƒ = 1.0MHz
pF
C
C
oss eff. (ER) Effective Output Capacitance (Energy Related) ––– 620 –––
oss eff. (TR) Effective Output Capacitance (Time Related) ––– 770 –––
VGS = 0V, VDS = 0V to 48V
VGS = 0V, VDS = 0V to 48V
Diode Characteristics
Symbol Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
––– –––
105
A
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
ISM
Pulsed Source Current
(Body Diode)
––– –––
460
S
VSD
dv/dt
trr
Diode Forward Voltage
––– ––– 1.2
V
TJ= 25°C,IS = 70A, VGS = 0V
Peak Diode Recovery
––– 4.1 ––– V/ns TJ =175°C,IS =70A, VDS = 60V
Reverse Recovery Time
–––
–––
–––
–––
41
44
55
71
–––
–––
ns TJ = 25° C VR = 51V,
IF = 70A
TJ = 125°C
di/dt = 100A/µs
Qrr
Reverse Recovery Charge
Reverse Recovery Current
––– nC TJ = 25°C
–––
TJ = 125°C
TJ = 25°C
IRRM
––– 2.5 –––
A
Notes:
Coss eff. (ER) is a fixed capacitance that gives the
Repetitive rating; pulse width limited by max. junction
temperature.
same energy as Coss while VDS is rising from 0 to
80% VDSS
.
Limited by TJmax, starting TJ = 25°C, L = 42µH
When mounted on 1" square PCB (FR-4 or G-10
Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
R is measured at TJ approximately 90°C.
RG = 50, IAS = 70A, VGS =10V.
ISD ≤ 70A, di/dt ≤ 980A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the
same charging time as Coss while VDS is rising from 0
This value determined from sample failure population,
starting TJ = 25°C, L= 42µH, RG = 50, IAS = 70A,
to 80% VDSS
.
VGS =10V.
3
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IRF7580MTRPbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
1
60µs PULSE WIDTH
Tj = 175°C
60µs PULSE WIDTH
Tj = 25°C
0.1
1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 3. Typical Output Characteristics
Fig 4. Typical Output Characteristics
1000
100
10
2.8
2.4
2.0
1.6
1.2
0.8
0.4
I
= 70A
D
V
= 10V
GS
T
= 175°C
J
T
= 25°C
= 25V
J
V
DS
60µs PULSE WIDTH
1.0
3
4
5
6
7
8
-60 -40 -20
T
0
20 40 60 80 100120140160180
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
100000
10000
1000
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I
= 70A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
12.0
10.0
8.0
= C
rss
oss
gd
= C + C
V
V
V
= 48V
= 30V
= 12V
DS
DS
DS
ds
gd
C
iss
C
C
oss
6.0
rss
4.0
2.0
100
0.0
1
10
, Drain-to-Source Voltage (V)
100
0
20 40 60 80 100 120 140 160
V
DS
Q , Total Gate Charge (nC)
G
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage
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IRF7580MTRPbF
1000
100
10
100µsec
1msec
100
10
T
= 175°C
J
OPERATION
IN THIS
AREA
LIMITED BY
R
(on)
DS
1
T
V
= 25°C
= 0V
J
10msec
DC
1
0.1
0.01
Tc = 25°C
Tj = 175°C
Single Pulse
GS
0.1
0.1
1
10
0.3
0.4
V
0.5
0.6
0.7
0.8
0.9
1.0
V
, Drain-to-Source Voltage (V)
DS
, Source-to-Drain Voltage (V)
SD
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
1.0
78
Id = 1.0mA
76
74
72
70
68
66
64
0.8
0.6
0.4
0.2
0.0
-10
0
10
20
30
40
50
60
-60 -40 -20
0
20 40 60 80 100120140160180
, Temperature ( °C )
T
J
V
Drain-to-Source Voltage (V)
DS,
Fig 12. Typical Coss Stored Energy
Fig 11. Drain-to-Source Breakdown Voltage
7.0
Vgs = 5.5V
6.0
5.0
4.0
3.0
2.0
Vgs = 6.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
0
20 40 60 80 100 120 140 160 180 200
, Drain Current (A)
I
D
Fig 13. Typical On-Resistance vs. Drain Current
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IRF7580MTRPbF
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 15. Avalanche Current vs. Pulse Width
120
100
80
60
40
20
0
TOP
BOTTOM 1.0% Duty Cycle
= 70A
Single Pulse
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
I
D
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
25
50
75
100
125
150
175
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
I
av = 2T/ [1.3·BV·Zth]
Fig 16. Maximum Avalanche Energy vs. Temperature
EAS (AR) = PD (ave)· av
t
6
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IRF7580MTRPbF
4.0
3.5
3.0
2.5
2.0
1.5
1.0
20
15
10
5
I = 46A
F
V
= 51V
R
T = 25°C
J
T = 125°C
J
I
I
I
I
= 150µA
= 250µA
= 1.0mA
= 1.0A
D
D
D
D
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
200
400
600
800
1000
T
, Temperature ( °C )
di /dt (A/µs)
J
F
Fig 17. Threshold Voltage vs. Temperature
Fig 18. Typical Recovery Current vs. dif/dt
25
300
I = 70A
F
I = 46A
F
V
= 51V
V
= 51V
R
R
20
15
10
5
250
200
150
100
50
T = 25°C
J
T = 125°C
J
T = 25°C
J
T = 125°C
J
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig 20. Typical Stored Charge vs. dif/dt
Fig 19. Typical Recovery Current vs. dif/dt
300
I = 70A
F
V
= 51V
R
250
200
150
100
50
T = 25°C
J
T = 125°C
J
0
200
400
600
800
1000
di /dt (A/µs)
F
Fig 21. Typical Stored Charge vs. dif/dt
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IRF7580MTRPbF
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
I
0.01
t
AS
p
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 25b. Gate Charge Waveform
Fig 25a. Gate Charge Test Circuit
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IRF7580MTRPbF
DirectFET® Board Footprint, ME Outline
(Medium Size Can, E-Designation)
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
G
S
S
S
S
S
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRF7580MTRPbF
DirectFET® Outline Dimension, ME Outline
(Medium Size Can, E-Designation)
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all
recommendations for stencil and substrate designs.
DIMENSIONS
METRIC
IMPERIAL
CODE MIN MAX
MIN
MAX
0.250
0.199
0.156
0.018
0.024
0.044
0.038
0.052
0.017
0.024
0.036
0.083
0.144
0.028
A
B
6.25 6.35
4.80 5.05
3.85 3.95
0.35 0.45
0.58 0.62
1.08 1.12
0.93 0.97
1.28 1.32
0.38 0.42
0.58 0.62
0.88 0.92
2.08 2.12
3.63 3.67
0.59 0.70
0.246
0.189
0.152
0.014
0.023
0.043
0.037
0.050
0.015
0.023
0.035
0.082
0.143
0.023
C
D
E
F
G
H
J
J1
K
L
L1
M
N
P
0.02 0.08 0.0008 0.003
0.08 0.17 0.003 0.007
Dimensions are shown in
millimeters (inches)
DirectFET® Part Marking
LOGO
GATE MARKING
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRF7580MTRPbF
DirectFET® Tape & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF7580MTRPBF). For 1000 parts on 7"
reel, order IRF7580MTR1PBF
DIMENSIONS
METRIC
IMPERIAL
REEL DIMENSIONS
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
MIN
MIN
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
STANDARD OPTION (QTY 4800)
METRIC
IMPERIAL
TR1 OPTION (QTY 1000)
METRIC
IMPERIAL
A
B
C
D
E
F
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
CODE
MIN
12.992
0.795
0.504
0.059
3.937
N.C
MAX
N.C
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
MAX
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
MIN
MAX
N.C
A
B
C
D
E
F
330.0
20.2
12.8
1.5
177.77
19.06
13.5
1.5
0.75
0.53
0.059
2.31
N.C
N.C
N.C
0.520
N.C
12.8
N.C
G
H
100.0
N.C
58.72
N.C
N.C
N.C
1.60
0.063
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification Information†
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification Level
MSL3
DFET 1.5
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC J-STD-020D††)
Yes
†
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
††
Applicable version of JEDEC standard at the time of product release.
* Industrial qualification standards except autoclave test conditions.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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