IRF7603PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET型号: | IRF7603PBF |
厂家: | Infineon |
描述: | HEXFET Power MOSFET |
文件: | 总8页 (文件大小:1301K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD-95347
IRF7603PbF
Lead-Free
www.irf.com
1
02/22/05
IRF7603PbF
2
www.irf.com
IRF7603PbF
www.irf.com
3
IRF7603PbF
4
www.irf.com
IRF7603PbF
www.irf.com
5
IRF7603PbF
6
www.irf.com
IRF7603PbF
Micro8 Package Outline
Dimensions are shown in milimeters (inches)
LEAD ASSIGNMENTS
INCHES
MILLIMETERS
DIM
A
D
MIN
.036
MAX
.044
.008
.014
.007
.120
MIN
0.91
0.10
0.25
0.13
2.95
MAX
1.11
0.20
0.36
0.18
3.05
3
- B -
D
D
7
D
6
D
5
D1 D1 D2 D2
A1 .004
8
1
8
1
7
6
5
4
B
C
D
e
.010
.005
.116
8
1
7
2
6
3
5
4
3
SINGLE
DUAL
H
E
0.25 (.010)
M
A
M
- A -
2
3
4
2 3
.0256 BASIC
.0128 BASIC
0.65 BASIC
0.33 BASIC
e1
E
H
L
S
S
S
G
S1 G1 S2 G2
.116
.188
.016
0°
.120
.198
.026
6°
2.95
4.78
0.41
0°
3.05
5.03
0.66
6°
e
θ
6X
e 1
RECOMMENDED FOOTPRINT
θ
1.04
( .041 )
8X
0.38
8X
A
( .015 )
- C -
B
0.10 (.004)
A 1
C
L
8X
0.08 (.003)
8X
8X
M
C
A
S
B S
4.24
( .167 )
3.20
( .126 )
5.28
( .208 )
NOTES:
1
2
3
DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
CONTROLLING DIMENSION : INCH.
0.65
( .0256 )
6X
DIMENSIONS DO NOT INCLUDE MOLD FLASH.
Micro8 Part Marking Information
EXAMPLE: THIS IS AN IRF7501
LOT CODE (XX)
PART NUMBER
DAT E CODE (YW) - S ee table below
Y = YEAR
W = WE E K
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
WW = (27-52) IF PRECEDED BY ALETTER
WOR K
WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
WOR K
YEAR
Y
WEEK
W
YEAR
Y
WEEK
W
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
F
G
H
J
27
28
29
30
A
B
C
D
24
25
26
X
Y
Z
K
50
51
52
X
Y
Z
www.irf.com
7
IRF7603PbF
Micro8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
2. CONTROLLING DIMENSION : MILLIMETER.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/05
8
www.irf.com
相关型号:
IRF7604TRPBF
Power Field-Effect Transistor, 3.6A I(D), 20V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
INFINEON
IRF7606TR
Power Field-Effect Transistor, 3.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
INFINEON
IRF7606TRHR
Power Field-Effect Transistor, 3.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8, SOIC-8
INFINEON
IRF7607TR
Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
INFINEON
©2020 ICPDF网 联系我们和版权申明