IRF7702 [INFINEON]
Power MOSFET(Vdss=-12V); 功率MOSFET （ VDSS = -12V ）
| 型号： | IRF7702 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=-12V) |
| 文件： | 总8页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93849C
IRF7702
PROVISIONAL
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l -1.8V Rated
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile ( < 1.1mm)
l Available in Tape & Reel
VDSS
RDS(on) max
ID
0.014@VGS = -4.5V
0.019@VGS = -2.5V
0.027@VGS = -1.8V
-8.0A
-7.0A
-5.8A
-12V
1
2
3
4
8
7
6
5
D
S
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
nationalRectifier iswellknownfor,providesthedesigner
with an extremely efficient and reliable device for
battery and load management.
G
1 =
D
S
S
8 =
7 =
6 =
5 =
D
S
S
2 =
3 =
4 =
G
D
TSSOP-8
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
Drain- Source Voltage
Max.
-12
Units
V
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
±8.0
±7.0
±70
A
PD @TC = 25°C
PD @TC = 70°C
Power Dissipation
1.5
W
Power Dissipation
0.96
0.01
± 8.0
Linear Derating Factor
W/°C
V
VGS
Gate-to-Source Voltage
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
83
Units
°C/W
RθJA
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1
6/19/00
PROVISIONAL
IRF7702
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-12 ––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -0.007 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.014
––– ––– 0.019
––– ––– 0.027
-0.45 ––– -1.2
26 ––– –––
––– ––– 1.0
––– ––– -25
––– ––– -100
––– ––– 100
VGS = -4.5V, ID = -8.0A
VGS = -2.5V, ID = -7.0A
VGS = -1.8V, ID = -5.8A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -8.0A
VDS = -12V, VGS = 0V
VDS = -9.6V, VGS = 0V, TJ = 70°C
VGS = -8.0V
Ω
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 8.0V
Qg
––– 54
––– 7.8
––– 15
81
12
23
ID = -8.0A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = -9.6V
VGS = -4.5V
––– 16 –––
––– 21 –––
––– 320 –––
––– 250 –––
––– 3470 –––
––– 1040 –––
––– 670 –––
VDD = -6.0V
ns
ID = -1.0A
td(off)
tf
Turn-Off Delay Time
Fall Time
RD = 6.0Ω
RG = 6.0Ω
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF
VDS = -10V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
showing the
––– -1.5
–––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
––– ––– -70
––– ––– -1.2
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
V
TJ = 25°C, IS = -1.5A, VGS = 0V
––– 58
––– 41
87
62
ns
TJ = 25°C, IF = -1.5A
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board, t<10 sec
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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PROVISIONAL
IRF7702
1000
1000
100
10
VGS
VGS
TOP
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
TOP
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
BOTTOM -1.50V
100
10
-1.50V
-1.50V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
1
0.1
1
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
100.00
10.00
1.00
T
= 25°C
J
T
= 150°C
J
100
°
T = 150 C
J
°
T = 25 C
J
V
GS
= 0V
V
= -15V
DS
20µs PULSE WIDTH
10
1.5
2.0
2.5
3.0 3.5
0.0
1.0
2.0
3.0
4.0
5.0
6.0
-V , Gate-to-Source Voltage (V)
GS
-V , Source-toDrain Voltage (V)
SD
Fig 4. Typical Source-Drain Diode
Fig 3. Typical Transfer Characteristics
Forward Voltage
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3
PROVISIONAL
IRF7702
5000
10
8
V
GS
= 0V,
f = 1MHz
C
I
D
=
-8.0A
C
= C + C
SHORTED
ds
iss
gs
gd ,
gd
V
=-9.6V
DS
C
= C
gd
rss
C
= C + C
4000
3000
2000
1000
0
oss ds
C
iss
6
4
2
C
oss
rss
C
0
0
20
40
60
80
1
10
100
Q , Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
0.80
0.60
0.40
0.20
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
= -250µA
D
100
10
1
100us
1ms
10ms
°
= 25 C
T
A
°
= 150 C
Single Pulse
T
J
0.1
1
10
100
-75 -50 -25
0
25
50
75 100 125 150
-V , Drain-to-Source Voltage (V)
DS
T
, Temperature ( °C )
J
Fig 8. Maximum Safe Operating Area
Fig 7. Threshold Voltage Vs. Temperature
4
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PROVISIONAL
IRF7702
8.0
6.0
4.0
2.0
0.0
40
30
20
10
0
25
50
75
100
125
150
0.01
0.10
1.00
10.00
100.00
°
T , Case Temperature ( C)
C
Time (sec)
Fig 10. Typical Power Vs. Time
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
D = 0.50
0.20
0.10
0.05
10
0.02
0.01
P
DM
1
t
1
t
2
Notes:
SINGLE PULSE
(THERMAL RESPONSE)
1. Duty factor D = t / t
1
2
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
PROVISIONAL
IRF7702
2.0
0.20
-8.0A
=
I
D
0.16
0.12
0.08
0.04
0.00
1.5
1.0
0.5
0.0
V
V
= -2.5V
= -4.5V
GS
GS
V
= -4.5V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
0
20
40
60
80
100
T , Junction Temperature ( C)
J
-I , Drain Current (A)
D
Fig 12. Normalized On-Resistance
Fig 13. Typical On-Resistance Vs. Drain
Vs. Temperature
Current
0.020
I
= -8.0A
D
0.015
0.010
1.5
2.5
Gate -to -Source Voltage (V)
3.5
-V
GS,
Fig 14. Typical On-Resistance Vs. Gate
Voltage
6
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PROVISIONAL
IRF7702
TSSOP-8 Part Marking Information
EXAMPLE: THIS IS AN IRF7702
DAT E CODE (YW)
LOT CODE (XX)
TABLE 1
XXYW
7702
PART NUMBER
WORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ETC.)
WORK
YEAR
Y
WEEK
W
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
DATE CODE EXAMPLES:
9503 = 5C
9532 = EF
24
25
26
X
Y
Z
TABLE 2
WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.)
WORK
YEAR
Y
WE EK
W
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
27
28
29
30
A
B
C
D
K
50
51
52
X
Y
Z
TSSOP-8 Tape and Reel
8LTSSOP (MO-153AA)
Ø 13"
16 mm
16mm
FEED DIRECTION
NOT E S:
1. TAPE & REEL OUTLINE CONFORMS TO EIA-481 & EIA-541.
8 mm
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7
PROVISIONAL
IRF7702
TSSOP-8 Package Outline
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 6/00
8
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